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<title>mems-talk</title>
<link>https://mail.mems-exchange.org/mems-talk/</link>
<description>This is the archive of the mems-talk mailing list.  For more information about the list and to subscribe, see the &lt;a href=&quot;http://mail.mems-exchange.org/mailman/listinfo/mems-talk&quot;&gt;mems-talk subscription page&lt;/a&gt;.</description><language>en-us</language>
<copyright>Copyright 2013, MEMS Exchange.</copyright>
<webMaster>webmaster@mems-exchange.org</webMaster>
<item>
<title>EEG Devices and Sensors</title>
<pubDate>2013-05-16</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25665/</link>
<description>Michael Martin</description></item>
<item>
<title>EEG Devices and Sensors</title>
<pubDate>2013-05-16</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25664/</link>
<description>masgandhul</description></item>
<item>
<title>UV 26-3.0</title>
<pubDate>2013-05-10</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25663/</link>
<description>Jocelyn Ng</description></item>
<item>
<title>Properties of Ca modified Lead Titanate</title>
<pubDate>2013-05-09</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25662/</link>
<description>Azeem Zulfiqar</description></item>
<item>
<title>Resist thickness for nitride etch</title>
<pubDate>2013-05-09</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25661/</link>
<description>Robert Ditizio</description></item>
<item>
<title>Resist thickness for nitride etch</title>
<pubDate>2013-05-09</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25660/</link>
<description>Andrew Sarangan</description></item>
<item>
<title>Resist thickness for nitride etch</title>
<pubDate>2013-05-09</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25659/</link>
<description>MRC gmail</description></item>
<item>
<title>Resist thickness for nitride etch</title>
<pubDate>2013-05-09</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25658/</link>
<description>Andrew Sarangan</description></item>
<item>
<title>Resist thickness for nitride etch</title>
<pubDate>2013-05-09</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25657/</link>
<description>Haider, Ahmad M</description></item>
<item>
<title>Resist thickness for nitride etch</title>
<pubDate>2013-05-09</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25656/</link>
<description>Haider, Ahmad M</description></item>
<item>
<title>Properties of Ca modified Lead Titanate</title>
<pubDate>2013-05-09</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25655/</link>
<description>Md A Muztoba</description></item>
<item>
<title>electroform station</title>
<pubDate>2013-05-09</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25654/</link>
<description>Dave Roberts</description></item>
<item>
<title>Resist thickness for nitride etch</title>
<pubDate>2013-05-08</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25653/</link>
<description>Lou Chomas</description></item>
<item>
<title>Remove aluminum mask after DRIE</title>
<pubDate>2013-05-08</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25652/</link>
<description>Michael Martin</description></item>
<item>
<title>Resist thickness for nitride etch</title>
<pubDate>2013-05-08</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25651/</link>
<description>Haider, Ahmad M</description></item>
<item>
<title>Remove aluminum mask after DRIE</title>
<pubDate>2013-05-08</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25650/</link>
<description>Yongliang Yang</description></item>
<item>
<title>Remove aluminum mask after DRIE</title>
<pubDate>2013-05-08</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25649/</link>
<description>Shivalik Bakshi</description></item>
<item>
<title>Remove aluminum mask after DRIE</title>
<pubDate>2013-05-08</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25648/</link>
<description>Robert Ditizio</description></item>
<item>
<title>electroform station</title>
<pubDate>2013-05-06</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25647/</link>
<description>André Bödecker</description></item>
<item>
<title>Remove aluminum mask after DRIE</title>
<pubDate>2013-05-06</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25646/</link>
<description>HJ Rhee</description></item>
<item>
<title>electroform station</title>
<pubDate>2013-05-03</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25645/</link>
<description>Hong Wang</description></item>
<item>
<title>Process parameter for SU-8</title>
<pubDate>2013-05-01</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25644/</link>
<description>Bill Chow</description></item>
<item>
<title>Silicon Nitride shorting metal layers</title>
<pubDate>2013-04-30</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25643/</link>
<description>nahid vahabi</description></item>
<item>
<title>Silicon Nitride shorting metal layers</title>
<pubDate>2013-04-30</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25642/</link>
<description>Ruiz, Dan (SGNCOE)</description></item>
<item>
<title>Silicon Nitride shorting metal layers</title>
<pubDate>2013-04-30</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25641/</link>
<description>basar bolukbas</description></item>
<item>
<title>Silicon Nitride shorting metal layers</title>
<pubDate>2013-04-30</pubDate>
<link>https://mail.mems-exchange.org/mems-talk/25640/</link>
<description>Michael Martin</description></item>
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