From GimHwa@exploit-tech.com Fri Mar 1 08:26:51 2002 From: GimHwa@exploit-tech.com (GimHwa@exploit-tech.com) Date: Fri, 1 Mar 2002 16:26:51 +0800 Subject: [mems-talk] Request on market statistics of MEMS Message-ID: Dear All I am interested in getting the market statistics of Japan, Europe, Asia and North America for MEMS in the following area for the last and next 5 years drug delivery systems optical MEMs Lab-on-a-chip magnetic-optical Head RF Mems Micromotors zINclinometers injection nozzles anti-collision systems electronic noses mircorelays I would appreciate if you would point me to any sources that will provide the above information. Thank you Gim Hwa From lteyssed@altern.org Fri Mar 1 10:06:26 2002 From: lteyssed@altern.org (lteyssed@altern.org) Date: Fri, 1 Mar 2002 11:06:26 +0100 (CET) Subject: [mems-talk] Anodic bonding glass-titanium Message-ID: I tried to make anodic bonding between glass and titanium but it was unsuccessful. Have you any idea about why it didn't succeed ? Thank you in advance. From stephan.ertl@gfd-diamond.com Fri Mar 1 14:34:23 2002 From: stephan.ertl@gfd-diamond.com (Ertl, Stephan) Date: Fri, 1 Mar 2002 15:34:23 +0100 Subject: AW: [mems-talk] Request on market statistics of MEMS Message-ID: <0136AE4B85E5604FA78C08E92119ABD00A5BF7@gfd-active.gfdulm> Try TFI in Enland for Medical MEMS. Regards Stephan -----Urspr|ngliche Nachricht----- Von: GimHwa@exploit-tech.com [mailto:GimHwa@exploit-tech.com] Gesendet: Freitag, 1. Mdrz 2002 09:27 An: mems-talk@memsnet.org Betreff: [mems-talk] Request on market statistics of MEMS Dear All I am interested in getting the market statistics of Japan, Europe, Asia and North America for MEMS in the following area for the last and next 5 years drug delivery systems optical MEMs Lab-on-a-chip magnetic-optical Head RF Mems Micromotors zINclinometers injection nozzles anti-collision systems electronic noses mircorelays I would appreciate if you would point me to any sources that will provide the above information. Thank you Gim Hwa _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From handerson@kineticsgroup.com Fri Mar 1 15:55:48 2002 From: handerson@kineticsgroup.com (Anderson, Hilary) Date: Fri, 1 Mar 2002 07:55:48 -0800 Subject: [mems-talk] CMP Foundry Services Message-ID: <55AF34EDA0016E4F9A4DBF150C62C93A01E416@azexch> Try Prodeo Technologies in Phoenix. http://www.prodeotech.com/ -----Original Message----- From: Naresh Mantravadi [mailto:mvvidyasagar@hotmail.com] Sent: Thursday, February 28, 2002 10:55 AM To: mems-talk@memsnet.org Subject: [mems-talk] CMP Foundry Services Hello All, Sorry for the confusion that I created. I was actually looking for CMP Foundry Services. Please let me know if there are any service suppliers in and around Bay Area. If not in Bay Area are there any other facilities in USA which offer CMP. Most of the emails which I have got were from CMP manufacturers but I was expecting from CMP services. Your help is greatly appreciated. Vidya Sagar _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From R.Islam@EVGroup.com Fri Mar 1 16:09:47 2002 From: R.Islam@EVGroup.com (Islam Rafiqul) Date: Fri, 1 Mar 2002 09:09:47 -0700 Subject: [mems-talk] Anodic bonding glass-titanium Message-ID: <1DD2B880949BD311907B0050040C0A243DE063@MAGELLAN> Can you provide the details of your process? Temperature? Voltage time? etc... Best Regards, Rafiqul Islam EV Group Inc.- Technology- Tel: (602) 437 9492 x 118, (602)2842134 (cell),Fax: (602) 437 9435, e-mail: R.Islam@EVGroup.com web: www.EVGroup.com -----Original Message----- From: lteyssed@altern.org [mailto:lteyssed@altern.org] Sent: Friday, March 01, 2002 3:06 AM To: mems-talk@memsnet.org Subject: [mems-talk] Anodic bonding glass-titanium I tried to make anodic bonding between glass and titanium but it was unsuccessful. Have you any idea about why it didn't succeed ? Thank you in advance. _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From rshile@tmmicro.com Fri Mar 1 17:09:17 2002 From: rshile@tmmicro.com (Roger Shile) Date: Fri, 01 Mar 2002 09:09:17 -0800 Subject: [mems-talk] Anodic bonding glass-titanium Message-ID: I tried unsucessfully to bond Pyrex to a chrome film in air. However someone on this forum indicated they were able to do this in a nitrogen ambient. I understand that many metals can be andoically bonded to Pyrex. The trick may be to prevent excessive oxidation of the metal during bonding. Roger Shile >>> lteyssed@altern.org 03/01/02 02:06AM >>> I tried to make anodic bonding between glass and titanium but it was unsuccessful. Have you any idea about why it didn't succeed ? Thank you in advance. _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From lyoung@kionix.com Fri Mar 1 18:53:57 2002 From: lyoung@kionix.com (Lincoln Young) Date: Fri, 1 Mar 2002 13:53:57 -0500 Subject: [mems-talk] Fluidic Packaging In-Reply-To: Message-ID: Good Day, I am searching for plastics machining/molding companies that are targeting microfluidic packaging. We are currently looking for some companies that would be prepared to assist with the development of a number of packages for different applications. Any leads would be appreciated. Thank you, Lincoln Lincoln Young Product Engineer, Microfluidics Kionix, Inc. (Ph) 607-257-1080 ex. 197 lyoung@kionix.com From majumdar@uiuc.edu Fri Mar 1 20:40:00 2002 From: majumdar@uiuc.edu (Zigurts Majumdar) Date: Fri, 1 Mar 2002 14:40:00 -0600 (CST) Subject: [mems-talk] protection for glass etching In-Reply-To: Message-ID: Hi, Right now we're using chrome-gold-chrome layers, 100A-150A-100A to protect for glass etching. I noticed that if I do a BOE etch over 35 minutes, it starts to eat through the layers some and makes the channel edges rough. I wondered if, in addition to thicker protective layers, the preparation of the glass surface had an effect, say a SC-1/BHF clean instead of H202:H2SO4. THanks, Ziggy From abhush@yahoo.com Fri Mar 1 21:52:12 2002 From: abhush@yahoo.com (Abhinav Bhushan) Date: Fri, 1 Mar 2002 13:52:12 -0800 (PST) Subject: [mems-talk] Etch rates for all etchants In-Reply-To: Message-ID: <20020301215212.55000.qmail@web13803.mail.yahoo.com> Hi Amanpreet, This should be a good reference and an appropritate starting point Williams, K.R.; Muller, R.S. Etch rates for micromachining processing. Journal of Microelectromechanical Systems, vol.5, (no.4), IEEE, Dec. 1996. p.256-69. hope that helps, Abhinav --- Amanpreet wrote: > Hello > > I am looking for the etch rates for all the > processes and all the etchants > particularly with the anisotropic etchants and deep > reactive ion etching. If > any one can give me information about this it will > be of great help. thanks > for reading and your help > > Amanpreet Singh Yahoo! Greetings - Send FREE e-cards for every occasion! http://greetings.yahoo.com From abhush@yahoo.com Fri Mar 1 21:59:46 2002 From: abhush@yahoo.com (Abhinav Bhushan) Date: Fri, 1 Mar 2002 13:59:46 -0800 (PST) Subject: [mems-talk] issues related to integartion of MEMS with electronics In-Reply-To: <002e01c1c035$7ac0a610$77c809c0@manoj> Message-ID: <20020301215946.56343.qmail@web13803.mail.yahoo.com> temperature will be one for sure. Other parameters will depend upon the mems product and the electronics that you are integrating it with. what kind of electronics is it, cmos, ? Equipment needs should be thought out carefully, based upon 'your' requirements. sometimes an in-house equipment provides a faster/cost-effective solution. Again, it all depends upon the application. hope that helps, Abhinav --- Manoj Wadhwa wrote: > Hello! > > Our company semiconductor complex ltd, India is > diversifying into > manufacturing of MEMS devices. We are in the process > of finalising the > equipment required. > > Can anyone suggest what are issues related to > integartion of MEMS with > electronics? Will we require some specific equipment > to resolve these issues? > > Thanks, > > Manoj Wadhwa > Manager - VLSI > SCL - INDIA > WEB : www.sclindia.com/fab.html > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe > or change your list > options, visit > http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS > processing services. > Visit us at http://www.mems-exchange.org/ Yahoo! Greetings - Send FREE e-cards for every occasion! http://greetings.yahoo.com From abhush@yahoo.com Fri Mar 1 22:05:09 2002 From: abhush@yahoo.com (Abhinav Bhushan) Date: Fri, 1 Mar 2002 14:05:09 -0800 (PST) Subject: [mems-talk] Anodic bonding glass-titanium In-Reply-To: Message-ID: <20020301220509.76494.qmail@web13807.mail.yahoo.com> can you divulge some details of the process? temperature, thickness of Ti layer, cleaning method, time, force, contact area, glass type... Abhinav --- lteyssed@altern.org wrote: > I tried to make anodic bonding between glass and > titanium but it was unsuccessful. Have you any idea > about why it didn't succeed ? > > Thank you in advance. Yahoo! Greetings - Send FREE e-cards for every occasion! http://greetings.yahoo.com From rogerbr@earthlink.net Sat Mar 2 01:57:29 2002 From: rogerbr@earthlink.net (Roger Brennan) Date: Fri, 1 Mar 2002 17:57:29 -0800 Subject: [mems-talk] black wax Message-ID: <01C1C14A.8E532980.rogerbr@earthlink.net> In case you are still interested in black wax, the following is supposed to be a good substitute for TCE. I undestand TCE (and TCA) are not considered evironmentally friendly these days. The commercial name is "HyperSolve". I understand it is n-propyl bromide (1-bromopropane) with some secret additive. Here's one contact for it. Grant Moskowitz Aviation and Defense Team Leader Phone: 619-269-8930 Fax: 619-269-8932 4843 Voltaire Street, Suite A San Diego, CA 92107 email: gmoskowitz@ecolink.com Visit our new web site: www.ecolink.com PS: I'm going to look into the Enthone OMI "stop-off Number 1". -----Original Message----- From: Karl Cazzini [SMTP:karlcazzini@rcn.com] Sent: Tuesday, February 26, 2002 10:38 AM To: mems-talk@memsnet.org Subject: Re: [mems-talk] black wax A much better masking material Enthone OMI "stop-off Number 1". This material is a green paint on polymeric compound which dries quickly and is completley resistant to acids and bases. It is EASILY removed, and simply peels off like a rubber sheet - no residuals. I have used the Apiezon "Black Wax" material, but not with the same degree of satisfaction (especially upon removal - it leaves residuals). K. Cazzini (Ph.D) Senior Scientist Alcon Research Ltd. > > From: "ABHIJAT GOYAL" > Date: 2002/02/25 Mon PM 10:12:59 EST > To: mems-talk@memsnet.org > Subject: [mems-talk] black wax > > Hi, > > can you please suggest me some vendors for Black Wax as a mask for KOH etch. > Can you please tell me the vendors that are based in US only, since it will be > difficult for me to procure my order if they are outside the US. > > Also can you please suggest me something by which I can remove black wax after I have etched. > > Thanks in advance, > > Abhijat Goyal > > > Abhijat Goyal > EE MEMS group, > MS candidate, > Dept. Of Electrical Engineering, > State College, PA > > Ph: (R)814-2350917 > (O)814-8653664 > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From helvoort2@hotmail.com Sat Mar 2 12:09:04 2002 From: helvoort2@hotmail.com (Antonius Helvoort) Date: Sat, 02 Mar 2002 12:09:04 +0000 Subject: [mems-talk] Anodic bonding glass-titanium Message-ID: Reply to lteyssed@altern.org, "Anodic bonding glass-titanium" Hi "lteyssed", Why some metals bond well and others does not to glass by electrostatic bonding is an interesting question. I can only give you some thoughts and references: The first step in the bonding process is to create an electrostatic force pulling the materials into intimate contact. If the metal is non-blocking (providing metal ions to the glass), the charge build-up is too low and thereby the electrostatic force is too low. This is clearly the case for Ag. In the final step, anodic oxidation is thought to be necessary to get a strong and permanent bond. It could be that the metal does not oxidize (like Pt, but Ti will oxidize) or the properties of the oxide layer are not ideal (i.e. brittle, poor adherence to one or both parent materials or it is conductive). As far as I know (if Im not correct please someone correct me), there are only three reports about Ti anodic bonding. Two say possible (G. Wallis, D.I. Pomerantz, J. Appl. Phys., 1969, 40, 3946 and G. Wallis, Electrocomponent Sci.Techn., 1975, 2, 45.) and one says tried but does not report successful bonding (W.Y. Lee, F. Sequeda, D. Chapman, J Salem, Appl. Phys. Let., 1987, 50, 522.). Good luck, Ton van Helvoort Cambridge, UK >From: >Reply-To: mems-talk@memsnet.org >To: mems-talk@memsnet.org >Subject: [mems-talk] Anodic bonding glass-titanium >Date: Fri, 1 Mar 2002 11:06:26 +0100 (CET) > >I tried to make anodic bonding between glass and titanium but it was >unsuccessful. Have you any idea about why it didn't succeed ? > >Thank you in advance. _________________________________________________________________ Chat with friends online, try MSN Messenger: http://messenger.msn.com From rpooran@uark.edu Sun Mar 3 01:28:22 2002 From: rpooran@uark.edu (Ryan D. Pooran) Date: Sat, 2 Mar 2002 19:28:22 -0600 Subject: [mems-talk] Smooth KOH etching Message-ID: <000001c1c252$b8d63f40$7f0eb882@delta> Good day all, Recently I did a KOH etching of Si to make a thin diaphragm to be used as a pressure sensor. The diaphragm that was etched was very rough on the backside. Does anyone know how I can etch Si so it gives an almost perfect smooth surface? Thank you. Ryan Ryan D. Pooran Graduate Student Microelectronics- Photonics Graduate Program University of Arkansas 248 Physics Building Fayetteville, AR 72701 Ph: 501-575-5596(O) Ph: 501-575-4150(L) Email: rpooran@uark.edu From bdevarajan@hotmail.com Sun Mar 3 20:45:17 2002 From: bdevarajan@hotmail.com (Devarajan Balaraman) Date: Sun, 03 Mar 2002 15:45:17 -0500 Subject: [mems-talk] Plasm-therm RIE temperature Message-ID: Hi, Deos anyone know how hot the substrate gets inside an RIE chamber when you are etching at a power of say 150 W. Thanks. Dev __________________________________________________________________________ ------------------------------------------------------------------------ Chat with friends online, try MSN Messenger: Click Here From yseom@etri.re.kr Mon Mar 4 01:19:45 2002 From: yseom@etri.re.kr (yseom@etri.re.kr) Date: Mon, 4 Mar 2002 10:19:45 +0900 Subject: [mems-talk] How to hold micro size ball lens in the v-hole on the silicon waf er? Message-ID: <8470181DABD5D511B3E700D0B7A8AC4A9CC7DC@cms3.etri.re.kr> Hi all I would know how to hold ball lens with micro size in the V-groove performed on the silicon wafer. The length of V-groove is same with the its width. In order to hold ball lens on the silicon wafer if you have to use the powder or liquid polymer materials, please let me know what kind of material is good for this work. Thank you in advance. YongSung Eom, Ph. D Optical Module Packaging Team Electronics and Telecommunciations Research Institute Tel.: 042-860-5547 Fax.: 042-860-6836 E-mail: yseom@etri.re.kr From dkm@ece.iitkgp.ernet.in Mon Mar 4 17:15:24 2002 From: dkm@ece.iitkgp.ernet.in (Devendra Kumar Maurya) Date: Mon, 4 Mar 2002 12:15:24 -0500 (EST) Subject: [mems-talk] single crystal quartz substrate provider Message-ID: Hello all, Does someone know a provider of Z- cut single crystal quartz substrate few specification i am mentioning i.e length- along y axis (mechanical axis) width- along X axis (electrical axis) thickness (150 micron)- along Z direction (optical axis). with regards ****************************** Devendra Kumar Maurya scientific officer Microelectronics Centre Advanced Tech. Centre Department of Electronics& ECE Indian Institute of Technology Kharagpur- 721302,India ****************************** Phone: 91-3222-81479(O) Fax : 91-3222-755303 EMail: dkm@ece.iitkgp.ernet.in ****************************** From sgblanco@elec.gla.ac.uk Mon Mar 4 11:51:55 2002 From: sgblanco@elec.gla.ac.uk (Sonia Garcia Blanco) Date: Mon, 4 Mar 2002 11:51:55 +0000 (GMT) Subject: [mems-talk] Differential GeO2/SiO2 wet etch rate. In-Reply-To: <1FEDB520CA46D411AD2300508B9A3B1768E6FF@EXCHANGE> Message-ID: Dear All! I wanted to wet etch silica glass doped with GeO2 using 4:1 buffered HF. I was wondering if anybody could tell me the differential etch rate (if any) between GeO2 and SiO2 in HF. Thank you very much again for your help!! Best regards, Sonia. ***************************************************** Sonia Garcia-Blanco Department of Electronics and Electrical Engineering University of Glasgow Oakfield Ave. G12 8LT Glasgow Phone: Office: (0141) 339 8855 ext 0101 Lab: (0141) 330 6014 Email: sgblanco@elec.gla.ac.uk **************************************************** From Philip.KlauderJr@sea.siemens.com Mon Mar 4 15:17:52 2002 From: Philip.KlauderJr@sea.siemens.com (Klauder, Jr., Philip R.) Date: Mon, 4 Mar 2002 10:17:52 -0500 Subject: [mems-talk] Smooth KOH etching Message-ID: I may be jumping to conclusions but- Were you using a wafer polished on both sides? If so, who was your wafer supplier- If they are not double polishing experts, they may be introducing a lot of mechanical damage to the wafer that shows up as etch defects. How deep are you etching each side? Are you getting good agitation on both sides? Phil Klauder 215-646-7400 x2151 -----Original Message----- From: Ryan D. Pooran [mailto:rpooran@uark.edu] Sent: Saturday, March 02, 2002 8:28 PM To: mems-talk@memsnet.org Subject: [mems-talk] Smooth KOH etching Good day all, Recently I did a KOH etching of Si to make a thin diaphragm to be used as a pressure sensor. The diaphragm that was etched was very rough on the backside. Does anyone know how I can etch Si so it gives an almost perfect smooth surface? Thank you. Ryan Ryan D. Pooran Graduate Student Microelectronics- Photonics Graduate Program University of Arkansas 248 Physics Building Fayetteville, AR 72701 Ph: 501-575-5596(O) Ph: 501-575-4150(L) Email: rpooran@uark.edu _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From hychan@acae.cuhk.edu.hk Mon Mar 4 15:38:20 2002 From: hychan@acae.cuhk.edu.hk (Hoyin) Date: Mon, 4 Mar 2002 23:38:20 +0800 Subject: [mems-talk] Problem in etching Al and Pt Message-ID: <00b401c1c392$9cd30080$0100a8c0@hoyin1> Hi all, I have got a simple question. I want to sacrifically release my = device by etching Al. However, one of the layer is Pt. Will the Al = etchant etch Pt ??? What etchant do you suggest?? Thank you very much!!! Hoyin From kasmith2@ix.netcom.com Mon Mar 4 15:22:54 2002 From: kasmith2@ix.netcom.com (Kenneth Smith) Date: Mon, 04 Mar 2002 07:22:54 -0800 Subject: [mems-talk] single crystal quartz substrate provider References: Message-ID: <3C83914E.9020700@ix.netcom.com> Try Mark-optics in California, USA http://www.markoptics.com email mailto:julie@markoptics.com Regards, Ken Smith Kmbh Associates 47 Rocket Circle Rancho Cordova, CA 95742 U S A 510-714-5055 Efax- 510 217 4421 or 561 658 6136 High Purity Float Zone and Specialty CZ Silicon for Power, IR and Mirror Optics, Optoelectronics, MEMS, SOI, and other Semiconductor applications. Service in SOI, Polishing SSP and DSP. Quartz, Glass, Pyrex and Borofloat Wafer Supply. Anodic Bonding. SOG, SOS. Devendra Kumar Maurya wrote: > Hello all, > Does someone know a provider of > Z- cut single crystal quartz substrate > few specification i am mentioning i.e > length- along y axis (mechanical axis) > width- along X axis (electrical axis) > thickness (150 micron)- along Z direction (optical axis). > > with regards > ****************************** > Devendra Kumar Maurya > scientific officer > Microelectronics Centre > Advanced Tech. Centre > Department of Electronics& ECE > Indian Institute of Technology > Kharagpur- 721302,India > > ****************************** > Phone: 91-3222-81479(O) > Fax : 91-3222-755303 > EMail: dkm@ece.iitkgp.ernet.in > ****************************** From thinkerberry@hotmail.com Mon Mar 4 17:12:20 2002 From: thinkerberry@hotmail.com (Ken Kwon) Date: Mon, 04 Mar 2002 09:12:20 -0800 Subject: [mems-talk] TiO2 etch Message-ID: Hi, does anybody know how to etch TiO2? How do you do wet etch on TiO2 and how do you do dry etch on TiO2? Thanks for your time Ken. _________________________________________________________________ Send and receive Hotmail on your mobile device: http://mobile.msn.com From nbalu@blr.vsnl.net.in Mon Mar 4 17:26:28 2002 From: nbalu@blr.vsnl.net.in (N.Balasubramanian) Date: Mon, 4 Mar 2002 22:56:28 +0530 Subject: [mems-talk] clean room Message-ID: <001401c1c3a1$e39183c0$adbcc5cb@vsnl.net.in> can you please tell me wmich MEMS operations require a clean room and which do not and why. For example do you need a clean room to do microstereolithography Thank you Balu Dr N Balasubramanian (india) From wstonas@surromed.com Mon Mar 4 18:58:46 2002 From: wstonas@surromed.com (Walter Stonas) Date: Mon, 4 Mar 2002 10:58:46 -0800 Subject: [mems-talk] clean room Message-ID: Hi Dr N Balasubramanian, All front end operations need a clean room as well as some back end. A clean roon is designed to minimize particles and contamination from contacting the wafers and devices. One could also use a controlled environment which is an area with no raised floors and HEPA filters as well as clean room suits to minimize contamination. This is less costly than a true clean room an is being used in the manufacturing of biological chips. The class of clean room required is dependant on the CD (critical dimension) of your devices. SEMI has information of classes of cleanrooms at thier site SEMI.org. Sincerely, Walter Stonas Process Development Engineer -----Original Message----- From: N.Balasubramanian [mailto:nbalu@blr.vsnl.net.in] Sent: Monday, March 04, 2002 9:26 AM To: mems-talk@memsnet.org Subject: [mems-talk] clean room can you please tell me wmich MEMS operations require a clean room and which do not and why. For example do you need a clean room to do microstereolithography Thank you Balu Dr N Balasubramanian (india) _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From dan.w.chilcott@delphiauto.com Mon Mar 4 18:10:11 2002 From: dan.w.chilcott@delphiauto.com (dan.w.chilcott@delphiauto.com) Date: Mon, 4 Mar 2002 13:10:11 -0500 Subject: [mems-talk] Smooth KOH etching Message-ID: <05256B72.0063D381.00@notes.delphiauto.com> Ryan- There are several papers on this subject. In general, a KOH etched surface improves in roughness as you increase the concentration. Of course, this increases the etch rate of your mask as well. Increasing the concentration also diminishes diffusion effects( When etching deep cavities in low concentration etchants, the center of the cavity will etch at a different rate than the edges). Using greater than 30% by wt. KOH with water should give you a smooth surface. Intentional or unintentional additives can affect the surface quality. The additional of various alcohols will change the etch properties. In addition, contaminates such as iron in the solution can affect the surface of the etch. "Ryan D. Pooran" on 03/02/2002 08:28:22 PM Please respond to mems-talk@memsnet.org To: mems-talk@memsnet.org cc: (bcc: Dan W Chilcott/DELCO) Subject: [mems-talk] Smooth KOH etching Good day all, Recently I did a KOH etching of Si to make a thin diaphragm to be used as a pressure sensor. The diaphragm that was etched was very rough on the backside. Does anyone know how I can etch Si so it gives an almost perfect smooth surface? Thank you. Ryan Ryan D. Pooran Graduate Student Microelectronics- Photonics Graduate Program University of Arkansas 248 Physics Building Fayetteville, AR 72701 Ph: 501-575-5596(O) Ph: 501-575-4150(L) Email: rpooran@uark.edu _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ Received: from plmlir4.mail.eds.com ([205.191.22.44]) by ustryg98.delphiauto.net (Lotus SMTP MTA v4.6.7 (934.1 12-30-1999)) with SMTP id 05256B72.0052BE01; Mon, 4 Mar 2002 10:03:46 -0500 Received: from plmler3.mail.eds.com (plmler3.mail.eds.com [199.228.142.73]) by plmlir4.mail.eds.com (8.11.6/8.11.3) with ESMTP id g24F4LK06261 for ; Mon, 4 Mar 2002 09:04:21 -0600 (CST) Received: from kronos.mems-exchange.org (kronos.mems-exchange.org [132.151.8.1]) by plmler3.mail.eds.com (8.11.6/8.11.3) with ESMTP id g24Ew6P31170 for ; Mon, 4 Mar 2002 08:58:06 -0600 Received: from localhost ([127.0.0.1] helo=kronos.mems-exchange.org) by kronos.mems-exchange.org with esmtp (Exim 3.12 #1) id 16htud-0006H8-00; Mon, 04 Mar 2002 09:58:03 -0500 Received: from mail.uark.edu ([130.184.5.107]) by kronos.mems-exchange.org with esmtp (Exim 3.12 #1) id 16hKnp-0006oQ-00 for mems-talk@memsnet.org; Sat, 02 Mar 2002 20:28:41 -0500 Received: from delta ([130.184.14.127]) by mail.uark.edu (Netscape Messaging Server 4.15) with ESMTP id GSDIRQ01.W78 for ; Sat, 2 Mar 2002 19:28:38 -0600 From: "Ryan D. Pooran" To: Message-ID: <000001c1c252$b8d63f40$7f0eb882@delta> MIME-Version: 1.0 Content-Type: text/plain; charset="us-ascii" Content-Transfer-Encoding: 7bit X-Mailer: Microsoft Outlook, Build 10.0.2627 Subject: [mems-talk] Smooth KOH etching Sender: mems-talk-admin@memsnet.org Errors-To: mems-talk-admin@memsnet.org X-BeenThere: mems-talk@memsnet.org X-Mailman-Version: 2.0.8 Precedence: bulk Reply-To: mems-talk@memsnet.org List-Unsubscribe: , List-Id: General MEMS discussion List-Post: List-Help: List-Subscribe: , List-Archive: Date: Sat, 2 Mar 2002 19:28:22 -0600 |---------------------------------------> |USTRYG98/us/delphiauto | |USTRYH99/us/delphiauto | |USKOKH99/us/delphiauto | |USKOKHM1/DELCO | |USKOKM08/DELCO | |---------------------------------------> >---------------------------------------| |03/04/2002 10:03:51 AM - 03/04/2002 | |10:03:51 AM | |03/04/2002 10:03:51 AM - 03/04/2002 | |10:04:00 AM | |03/04/2002 10:04:02 AM - 03/04/2002 | |10:04:06 AM | |03/04/2002 10:04:02 AM - 03/04/2002 | |10:04:04 AM | |03/04/2002 10:04:05 AM - 03/04/2002 | |10:04:06 AM | >---------------------------------------| From kirt_williams@agilent.com Mon Mar 4 19:22:04 2002 From: kirt_williams@agilent.com (kirt_williams@agilent.com) Date: Mon, 4 Mar 2002 11:22:04 -0800 Subject: [mems-talk] Plasm-therm RIE temperature Message-ID: > Does anyone know how hot the substrate gets inside an RIE chamber when > you are etching at a power of say 150 W? The temperature varies greatly, depending on the thermal contact to the back side of the wafer, the thermal conductivity of the wafer, how exothermic the reaction is, exposed area, and other parameters. It may vary from wafer to wafer for your process. It can be measured by placing temperature dots (available from Omega) on the wafer. These turn dark when a threshold temperature is reached and are available in a range of temperatures. Your temperature is probably in the range of 50 C to 150 C. After placing a temperature dot, cover it with a little piece of Kapton tape. Poke a hole through the tape to allow air to escape in the vacuum chamber. --Kirt Williams Agilent Technologies From tah@mems.caltech.edu Mon Mar 4 19:25:00 2002 From: tah@mems.caltech.edu (Ted Harder) Date: Mon, 4 Mar 2002 11:25:00 -0800 Subject: [mems-talk] Smooth KOH etching In-Reply-To: <000001c1c252$b8d63f40$7f0eb882@delta> Message-ID: You also need to make sure you are using IPA as a surfactant. Read "Etching roughness for (100) silicon surfaces in aqueous KOH", Palik et al., J. Appl. Phys., v.70, p.3291. Ted Harder Research Assistant tah@mems.caltech.edu Caltech Micromachining Lab http://mems.caltech.edu Caltech 136-93 ofc: (626) 395-3469 Pasadena, CA 91125 fax: (626) 584-9104 -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of Ryan D. Pooran Sent: Saturday, March 02, 2002 5:28 PM To: mems-talk@memsnet.org Subject: [mems-talk] Smooth KOH etching Good day all, Recently I did a KOH etching of Si to make a thin diaphragm to be used as a pressure sensor. The diaphragm that was etched was very rough on the backside. Does anyone know how I can etch Si so it gives an almost perfect smooth surface? Thank you. Ryan Ryan D. Pooran Graduate Student Microelectronics- Photonics Graduate Program University of Arkansas 248 Physics Building Fayetteville, AR 72701 Ph: 501-575-5596(O) Ph: 501-575-4150(L) Email: rpooran@uark.edu _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From John.Vig@mail1.monmouth.army.mil Mon Mar 4 19:48:10 2002 From: John.Vig@mail1.monmouth.army.mil (Vig, John Dr CECOM RDEC C2D) Date: Mon, 4 Mar 2002 14:48:10 -0500 Subject: [mems-talk] FW: mems-talk digest, Vol 1 #211 - 18 msgs Message-ID: Re: mems-talk digest, Vol 1 #211, From: Devendra Kumar Maurya Subject: [mems-talk] single crystal quartz substrate provider Try: Hoffman Materials, Inc. Carlisle, PA, USA http://www.hoffmanmaterials.com/ and Sawyer Research Products, Eastlake, OH, USA .............John Vig From rshile@tmmicro.com Mon Mar 4 19:56:45 2002 From: rshile@tmmicro.com (Roger Shile) Date: Mon, 04 Mar 2002 11:56:45 -0800 Subject: [mems-talk] protection for glass etching Message-ID: I've been using 1200 Angstroms of Cr as a mask for etching Pyrex to a depth of 5 microns with BOE. (Photoresist wouldn't adhere well to the Pyrex). The Cr seems to hold up fine during this 3 hour etch. However the BOE undercuts the Cr ~16 microns for a 5 micron etch depth. I don't know if this is due to poor adhesion of the Cr or something else. If you can tolerate this sort of undercut, perhaps a thicker Cr layer will solve your problem. I recently tried etching the Pyrex by SF6/O2 RIE which reduced the 5 micron etch time to 1 hour, with ~1 micron of undercut. Roger Shile >>> majumdar@uiuc.edu 03/01/02 12:40PM >>> Hi, Right now we're using chrome-gold-chrome layers, 100A-150A-100A to protect for glass etching. I noticed that if I do a BOE etch over 35 minutes, it starts to eat through the layers some and makes the channel edges rough. I wondered if, in addition to thicker protective layers, the preparation of the glass surface had an effect, say a SC-1/BHF clean instead of H202:H2SO4. THanks, Ziggy _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From herricka@wharton.upenn.edu Mon Mar 4 20:11:06 2002 From: herricka@wharton.upenn.edu (Andrew Herrick) Date: Mon, 4 Mar 2002 15:11:06 -0500 Subject: [mems-talk] I am interested to talk to a researcher at PARC Message-ID: <003a01c1c3b8$bd8085c0$e001fc9e@BAH207408> Dear Mems-User Group, Please forgive my non-technical posting... I am an MBA student at the Wharton School at UPenn, and am currently applying for a business-related summer internship at PARC. In a previous life, I studied physics at the Australian National University and did my final research paper on silicon etching. This sounds similar in some ways to the work PARC is doing in the MEMS area, and I would love to talk to anyone working there to learn more about what they are doing in this field, and the kinds of issues they are facing. If anyone is inclined to talk to me, my email address is herricka@wharton.upenn.edu. Even a few minutes of your time would be very valuable. Thank you all for your time, and best wishes. Andrew Herrick From rdean@Eng.Auburn.EDU Mon Mar 4 20:38:42 2002 From: rdean@Eng.Auburn.EDU (Robert Dean) Date: Mon, 04 Mar 2002 14:38:42 -0600 Subject: [mems-talk] PCB MEMS Session of the IMAPS MEMS Advanced Technology Workshop In-Reply-To: Message-ID: <3.0.5.32.20020304143842.00ac66d0@pophost.eng.auburn.edu> Hello, The call for papers for the IMAPS "3rd Advanced Technology Workshop on Packaging of MEMS and Related Micro Integrated Nano Systems" has been released. The deadline is March 15th. The information is available at: http://www.imaps.org/callfor/mems2002.htm. I am the session chairman for the session devoted to PCB/laminate MEMS. I am relaying this information to the group because so many people have contacted me about it. If you submit an abstract, put "PCB MEMS" as the suggested session. Thanks. Sincerely, Robert Dean Research Associate IV Center for Advanced Vehicle Electronics Auburn University 200 Broun Hall Auburn, AL 36849 Voice: 334-844-1838 Fax: 334-844-1898 Email: rdean@eng.auburn.edu From rdean@Eng.Auburn.EDU Mon Mar 4 20:56:21 2002 From: rdean@Eng.Auburn.EDU (Robert Dean) Date: Mon, 04 Mar 2002 14:56:21 -0600 Subject: [mems-talk] MEMS pictures/movie clips Message-ID: <3.0.5.32.20020304145621.00ac7ea0@pophost.eng.auburn.edu> Hello, I am giving a free 3 hour short course on MEMS in April to the corporate sponsors of the research center I work at. I am looking for interesting photographs and/or PowerPoint movie clips that I can show during my presentation of example MEMS devices. I will gladly credit your company/organization during the presentation. This could be an excellent opportunity to freely advertise your work/products to the automobile manufacture/supplier industry. Thanks. Sincerely, Robert Dean Research Associate IV Center for Advanced Vehicle Electronics Auburn University 200 Broun Hall Auburn, AL 36849 Voice: 334-844-1838 Fax: 334-844-1898 Email: rdean@eng.auburn.edu From lhunter@EECS.Berkeley.EDU Mon Mar 4 22:10:32 2002 From: lhunter@EECS.Berkeley.EDU (lhunter@EECS.Berkeley.EDU) Date: Mon, 04 Mar 2002 14:10:32 -0800 Subject: [mems-talk] MEMS pictures/movie clips Message-ID: <1c13091c3b60.1c3b601c1309@EECS.Berkeley.EDU> Check Sandia's site for some cool movies of some of the things they've built. Maybe it's not very applicable to the auto industry but there are some pretty complex systems that they've built. http://mems.sandia.gov I'm not sure what their policy is on using the photos and clips but I think they're pretty liberal with them. ----- Original Message ----- From: Robert Dean Date: Monday, March 4, 2002 12:56 pm Subject: [mems-talk] MEMS pictures/movie clips > Hello, > > I am giving a free 3 hour short course on MEMS in April to the > corporatesponsors of the research center I work at. I am looking > for interesting > photographs and/or PowerPoint movie clips that I can show during my > presentation of example MEMS devices. I will gladly credit your > company/organization during the presentation. This could be an > excellentopportunity to freely advertise your work/products to the > automobilemanufacture/supplier industry. Thanks. > > Sincerely, > > > Robert Dean > > Research Associate IV > Center for Advanced Vehicle Electronics > Auburn University > 200 Broun Hall > Auburn, AL 36849 > > Voice: 334-844-1838 > Fax: 334-844-1898 > Email: rdean@eng.auburn.edu > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems- > talkHosted by the MEMS Exchange, providers of MEMS processing > services.Visit us at http://www.mems-exchange.org/ From yingkailiu@hotmail.com Mon Mar 4 22:47:49 2002 From: yingkailiu@hotmail.com (Yingkai Liu) Date: Mon, 04 Mar 2002 17:47:49 -0500 Subject: [mems-talk] polySi deposition Message-ID: Hi! there, We have some 4-inch wafers for polySi deposition. Does anybody know that some company/lab can provide the service? Any information would be greatly appreciated. Thanks and regards, Yingkai Liu ********************************************** Graduate Research Assistant * Department of Mechanical Engineering * University of Maryland * College Park, MD 20742 ************************************* Tel: (301)405-7630 * Fax: (301)314-9477 * *********************************************** _________________________________________________________________ Join the worlds largest e-mail service with MSN Hotmail. http://www.hotmail.com From Ultrasil@aol.com Tue Mar 5 01:55:59 2002 From: Ultrasil@aol.com (Ultrasil@aol.com) Date: Mon, 4 Mar 2002 20:55:59 EST Subject: [mems-talk] CMP Vendors Message-ID: <9a.21b6bada.29b57faf@aol.com> In a message dated 2/28/02 7:33:39 AM Pacific Standard Time, kirt_williams@agilent.com writes: Ultrasil corporation can do any speciality service for your polishing needs Please Contact us or visit our home page at www.ultrasil.com Also we are the larger producer of SOI thick film wafers by fusion bonding. We have in stock for immediate delivery excess inventory priced at discount rate. John > mems-talk@memsnet.org > To:mems-talk@memsnet.org > John Dancovich 3527 Breakwater Ave Hayward CA 94545 Phone: 510-266-3700 Fax: 510-266-3720 e-mail: ultrasil@aol.com [demime 0.98e removed an attachment of type application/zip which had a name of Inventory SOI 2-41.ZIP] From buduri@lycos.com Tue Mar 5 07:14:54 2002 From: buduri@lycos.com (kumar m.v.n buduri) Date: Tue, 05 Mar 2002 01:14:54 -0600 Subject: [mems-talk] Teflon coated pyrex glass wafer bonding Message-ID: Hai I would like to know how two pyrex glass wafers spin coated with teflon AF 1600/2400 can be bonded.(both bonded sides are coated with teflon).Please provide me with details of recepie/procedure. thank you 2,000,000,000 Web Pages--you only need 1. Save time with My Lycos. http://my.lycos.com From knut.lian@sensonor.no Tue Mar 5 08:18:07 2002 From: knut.lian@sensonor.no (Knut Lian) Date: Tue, 5 Mar 2002 09:18:07 +0100 Subject: [mems-talk] Fluidic Packaging Message-ID: <6DBA18B99E7F7846BA8F4065F828D7A5209E09@sensonor20.sensonor. no> Try FICO in The Netherlands. www.fico.nl Regards Knut Lian Process Engineer Wafer Fab Technology SensoNor asa PO Box 196, N-3192 Horten Norway http:\\www.sensonor.com Tel: +47 33 03 50 68 Fax: +47 33 03 51 05 -----Original Message----- From: Lincoln Young [mailto:lyoung@kionix.com] Sent: 1. mars 2002 19:54 To: mems-talk@memsnet.org Subject: [mems-talk] Fluidic Packaging Good Day, I am searching for plastics machining/molding companies that are targeting microfluidic packaging. We are currently looking for some companies that would be prepared to assist with the development of a number of packages for different applications. Any leads would be appreciated. Thank you, Lincoln Lincoln Young Product Engineer, Microfluidics Kionix, Inc. (Ph) 607-257-1080 ex. 197 lyoung@kionix.com _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From dalog.michal@railproject.sk Tue Mar 5 17:52:35 2002 From: dalog.michal@railproject.sk (Michal Dalog) Date: Tue, 5 Mar 2002 09:52:35 -0800 Subject: [mems-talk] Teflon foil Message-ID: <001101c1c46e$a09ec190$8408a8c0@railproject.sk> Hi Heiko van der Linden. Try this page http://www.rmbal.sk/produkt3.html Yours sincerely Michal Dalog. From Niels.Olij@Alcatel-optronics.nl Tue Mar 5 12:25:08 2002 From: Niels.Olij@Alcatel-optronics.nl (Niels Olij) Date: Tue, 5 Mar 2002 13:25:08 +0100 Subject: [mems-talk] Anodic bonding glass-titanium Message-ID: <696DAA9CDF1DD511982000508BAEC5743CFB00@enschedemail.aonl> Hi, I've done experiments with anodic bonding on Au and this worked well. Aluminum is known that it also works, but I did not try it. Niels Olij Alcatel Optronics Netherlands From NirP@phone-or.com Tue Mar 5 14:54:24 2002 From: NirP@phone-or.com (Nir Pernat) Date: Tue, 5 Mar 2002 16:54:24 +0200 Subject: [mems-talk] quarts wafers Message-ID: Anyone interesting in 20 4" quartz wafers ? Please contact me ----------------------------------- Nir Pernat Process Development Engineer Phone-Or Ltd. 17 Hatasia St. P.O Box 323 Or-Yahuda 60252 Israel Tel: +972-3-634-4488 (ext. 172) Fax: +972-3-634-9292 www.phone-or.com From m_aslammalik@yahoo.com Tue Mar 5 15:02:58 2002 From: m_aslammalik@yahoo.com (aslam muhammad) Date: Tue, 5 Mar 2002 07:02:58 -0800 (PST) Subject: [mems-talk] EPI layer Etching Message-ID: <20020305150258.774.qmail@web10802.mail.yahoo.com> i have got silicon <100> wafers with EPI layer of Ar. I want to etch through the silicon wafer to make some windows but EPI works as etch stop(i think). How can I etch EPI layer with wet etchant like TMAH. If i keep on etching the wafer, EPI layer etches very slowly but my mask ( SiO2 ) etches rapidly as compared to EPI layer. Is there any body to help, Please. Thanks M. Aslam Try FREE Yahoo! Mail - the world's greatest free email! http://mail.yahoo.com/ From BobHendu@aol.com Tue Mar 5 15:23:36 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Tue, 5 Mar 2002 10:23:36 EST Subject: [mems-talk] Plasm-therm RIE temperature Message-ID: <163.9ce7fe1.29b63cf8@aol.com> Depending on the amount of time that the substrate is in the plasma it could reach temperatures of >125 degrees C. Bob Henderson From beall@boulder.nist.gov Tue Mar 5 15:35:00 2002 From: beall@boulder.nist.gov (Jim Beall) Date: Tue, 5 Mar 2002 08:35:00 -0700 Subject: [mems-talk] silicon 'rounding' etch Message-ID: Greetings - We are looking for a wet etch to round or smooth the knife edges formed at the bottom edges of KOH etched through-holes in silicon. Something that preferentially attacks sharp points would be preferable. Plasma/RIE etches involving CF4, SF6, CHF3, O2 are also possible. Any hints would be appreciated. Jim -- - Jim Beall 303-497-5989 beall@boulder.nist.gov From hzeng@ece.uic.edu Wed Mar 6 02:03:00 2002 From: hzeng@ece.uic.edu (Hongjun Zeng) Date: Tue, 5 Mar 2002 18:03:00 -0800 Subject: [mems-talk] Pt deposition on glass or silicon In-Reply-To: Message-ID: Dear all, I'm trying to fabricate platinum electrodes on glass or silicon wafers. Originally, adopting Ti or Cr as adhesion layer can improve the adhesion of platinum on the substrate, but now my electrodes will be used for electroanalysis and don't want any active metal. So, 1. Is there any method to deposit platinum directly on glass or silicon with enough adhesion? 2. Or, if without platinum electrode, is there any other material which is chemically stable enough patterned on Si or glass to electrolyze water. Thanks a lot, Hongjun Zeng Microfabrication Applications Laboratory (MAL) University of Illinois at Chicago ERF Building, 842 W. Taylor Street Chicago, IL 60607-7022 Room 3014 ERF Tel.: 312-413-5889, Fax: 312-996-6465 From kasmith2@ix.netcom.com Wed Mar 6 00:11:50 2002 From: kasmith2@ix.netcom.com (Kenneth Smith) Date: Tue, 05 Mar 2002 16:11:50 -0800 Subject: [mems-talk] EPI layer Etching References: <20020305150258.774.qmail@web10802.mail.yahoo.com> Message-ID: <3C855EC6.1080008@ix.netcom.com> I guess first question would be why not get wafers without the epi. The easiest way to remove the Epi would be to Polish it off and can be done relatively cheap and with some level of control, assuming that the thickness is known. to remove with etch, KOH or Acid type etch would be needed, and then removal would be on both sides if back is bare as well. Ken aslam muhammad wrote: > i have got silicon <100> wafers with EPI layer of Ar. > I want to etch through the silicon wafer to make some > windows but EPI works as etch stop(i think). How can > I etch EPI layer with wet etchant like TMAH. If i > keep on etching the wafer, EPI layer etches very > slowly but my mask ( SiO2 ) etches rapidly as compared > to EPI layer. Is there any body to help, Please. > > Thanks > > M. Aslam -- Kmbh Associates 47 Rocket Circle Rancho Cordova, CA 95742 U S A 510-714-5055 Efax- 510 217 4421 or 561 658 6136 High Purity Float Zone and Specialty CZ Silicon for Power, IR and Mirror Optics, Optoelectronics, MEMS, SOI, and other Semiconductor applications. Service in SOI, Polishing SSP and DSP. Quartz, Glass, Pyrex and Borofloat Wafer Supply. Anodic Bonding. SOG, SOS. From stephane.durand@univ-lemans.fr Wed Mar 6 08:55:36 2002 From: stephane.durand@univ-lemans.fr (=?iso-8859-1?Q?St=E9phane?= DURAND) Date: Wed, 06 Mar 2002 09:55:36 +0100 Subject: [mems-talk] EPI layer Etching In-Reply-To: <20020305150258.774.qmail@web10802.mail.yahoo.com> Message-ID: <4.2.0.58.20020306095215.00a38580@aviion> Dear M. Aslam, you may use a multi-layer SIO2 - SI3N4 as mask. SI3N4 needs a thins SIO2 layer to prevent pinholes during etching, but it shows virtually no etch in TMAH (I experienced this with KOH, but I read it stands also TMAH). best regards, Stephane Durand At 07:02 05/03/02 -0800, vous avez icrit: >i have got silicon <100> wafers with EPI layer of Ar. >I want to etch through the silicon wafer to make some >windows but EPI works as etch stop(i think). How can >I etch EPI layer with wet etchant like TMAH. If i >keep on etching the wafer, EPI layer etches very >slowly but my mask ( SiO2 ) etches rapidly as compared >to EPI layer. Is there any body to help, Please. > >Thanks > >M. Aslam >Try FREE Yahoo! Mail - the world's greatest free email! >http://mail.yahoo.com/ >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ --------------- Stiphane DURAND --------------- Laboratoire d'Acoustique de l'Universiti du Maine LAUM - UMR-CNRS 6613 avenue Olivier Messiaen F-72085 Le Mans Cedex 9 --------------- Serveur du LAUM : http://laum.univ-lemans.fr --------------- Ecole Nationale Supirieure d'Inginieurs du Mans (E.N.S.I.M) rue Aristote F-72085 Le Mans Cedex 9 --------------- Serveur de l'ENSIM : http://ensim.univ-lemans.fr --------------- Email : stephane.durand@univ-lemans.fr Tel. : 33.(0)2.43.83.39.54 (bureau/office) Tel. : 33.(0)2.43.83.35.93 (secretariat E.N.S.I.M.) Fax. : 33.(0)2.43.83.37.94 (E.N.S.I.M.) Tel. : 33.(0)2.43.83.32.70 (secretariat L.A.U.M.) Fax. : 33.(0)2.43.83.35.20 (L.A.U.M.) --------------- Serveur de l'Universiti :http://www.univ-lemans.fr From frankdipiazza@sensicore.com Wed Mar 6 13:29:19 2002 From: frankdipiazza@sensicore.com (Frank DiPiazza) Date: Wed, 6 Mar 2002 08:29:19 -0500 Subject: [mems-talk] Fluidic Packaging Message-ID: <7B935C58B3FE9B41BF129B70865A4A3116171C@ardfs02.ardesta.com> Hi Lincoln, Micronics is a great place to go to for your needs. The contact there is Karen Hedine, President of Micronics. (425) 895-9197 ex 126. Good Luck. Frank -----Original Message----- From: Lincoln Young [mailto:lyoung@kionix.com] Sent: Friday, March 01, 2002 1:54 PM To: mems-talk@memsnet.org Subject: [mems-talk] Fluidic Packaging Good Day, I am searching for plastics machining/molding companies that are targeting microfluidic packaging. We are currently looking for some companies that would be prepared to assist with the development of a number of packages for different applications. Any leads would be appreciated. Thank you, Lincoln Lincoln Young Product Engineer, Microfluidics Kionix, Inc. (Ph) 607-257-1080 ex. 197 lyoung@kionix.com _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From hogedoorn@pml.tno.nl Wed Mar 6 14:47:36 2002 From: hogedoorn@pml.tno.nl (Hogedoorn, Armanda) Date: Wed, 6 Mar 2002 15:47:36 +0100 Subject: [mems-talk] High temperature Message-ID: Hello, I am looking for a good packaging/packaging material voor MEMS and IC, which is capable of high temperatures (up to 3200 degrees celcius). Does someone know which material I can use, or a company who makes these packages? And, does someone know a company who makes MEMS temperature-sensors for these high temperatures. Thanks, Armanda T. Hogedoorn hogedoorn@pml.tno.nl TNO- Prins Maurits Laboratory http://www.pml.tno.nl P.O. Box 45 2080 AA RIJSWIJK (ZH) The Netherlands Tel: +31 (0)15 284 3076 From irivas@ceit.es Wed Mar 6 15:53:19 2002 From: irivas@ceit.es (Rivas, Isabel) Date: Wed, 6 Mar 2002 16:53:19 +0100 Subject: [mems-talk] ion exchange simulator Message-ID: Hello, I'm looking for a freeware program to simulate the process of field assisted ion diffusion into materials (like glass). I would thank any suggestion on the matter. Best regards, Isabel. Isabel Rivas Guerrero irivas@ceit.es > CEIT, Seccisn de Microelectrsnica. > Paseo de Manuel Lardizabal, 15. > 20018 San Sebastian, Spain > Tel.: (34) 943 212 800 > Fax.: (34) 943 213 076 From michael.martin@louisville.edu Wed Mar 6 17:23:53 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Wed, 06 Mar 2002 12:23:53 -0500 Subject: [mems-talk] Pt deposition on glass or silicon Message-ID: Hi Hongjun, To avoid adhesion layers, you can use energetic ion deposition. Using this technique you can definitely put Au on glass without an adhesion layer and it passes tape tests. To use the technique inexpensively you can buy a conversion kit for your 4" sputterer from Skion Corp in NJ, www.skion.com, for about $10k. The conversion kit is essentially a thermally controlled Cs source. The idea is that the Cs, which has a very low work function, redilly gives up electrons to the metal source to produce negative ions that are given kinetic energy via either the plasma potential or an externally applied field. -Mike >>> hzeng@ece.uic.edu 03/05/02 06:03PM >>> Dear all, I'm trying to fabricate platinum electrodes on glass or silicon wafers. Originally, adopting Ti or Cr as adhesion layer can improve the adhesion of platinum on the substrate, but now my electrodes will be used for electroanalysis and don't want any active metal. So, 1. Is there any method to deposit platinum directly on glass or silicon with enough adhesion? 2. Or, if without platinum electrode, is there any other material which is chemically stable enough patterned on Si or glass to electrolyze water. Thanks a lot, Hongjun Zeng Microfabrication Applications Laboratory (MAL) University of Illinois at Chicago ERF Building, 842 W. Taylor Street Chicago, IL 60607-7022 Room 3014 ERF Tel.: 312-413-5889, Fax: 312-996-6465 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From arazavi@pmrc.marc.gatech.edu Wed Mar 6 17:21:35 2002 From: arazavi@pmrc.marc.gatech.edu (Ali Razavi) Date: Wed, 6 Mar 2002 12:21:35 -0500 Subject: [mems-talk] Characterizing Microlens Arrays Message-ID: <51502FA7FFF3D4118B7300600819C5010D126D@pmrc.marc.gatech.edu > Hello, We are fabricating microlenses. I am looking for methods that can help us to measure focal length, depth of focus, and spot size (in general testing the operation, efficiency and repeatablity of microlenses). Also, I am looking for vendors that can provide us the items required to build the setup. Thanks, Ali ******************************************************************** Ali Razavi Postdoctoral Fellow Room 455, Manufacturing Research Center Gerogia Institute of Technology, Atlanta, GA 30332-0405 Phone: 678-637-1634, Fax: 404-894-9342 E-mail: arazavi@pmrc.marc.gatech.edu ******************************************************************** From rdean@Eng.Auburn.EDU Wed Mar 6 18:03:44 2002 From: rdean@Eng.Auburn.EDU (Robert Dean) Date: Wed, 06 Mar 2002 12:03:44 -0600 Subject: [mems-talk] Characterizing Microlens Arrays In-Reply-To: <51502FA7FFF3D4118B7300600819C5010D126D@pmrc.marc.gatech.ed u > Message-ID: <3.0.5.32.20020306120344.00ad1100@pophost.eng.auburn.edu> Ali, Hello. I would suggest that you contact Michele Banish at MEMS Optical (Huntsville, AL), www.memsoptical.com. They not only manufacture micro-optics, but they also have a Zygo interferometer that I believe can characterize the shape of your micro-optics. Sincerely, Robert Dean Auburn University At 12:21 PM 3/6/02 -0500, you wrote: >Hello, > > We are fabricating microlenses. I am looking for methods that >can help us to measure focal length, depth of focus, and spot >size (in general testing the operation, efficiency and repeatablity >of microlenses). > Also, I am looking for vendors that can provide us the items >required to build the setup. > Thanks, > Ali >******************************************************************** > Ali Razavi > Postdoctoral Fellow > Room 455, Manufacturing Research Center > Gerogia Institute of Technology, Atlanta, GA 30332-0405 > Phone: 678-637-1634, Fax: 404-894-9342 > E-mail: arazavi@pmrc.marc.gatech.edu >******************************************************************** >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ From BobHendu@aol.com Wed Mar 6 18:21:26 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Wed, 6 Mar 2002 13:21:26 EST Subject: [mems-talk] Pt deposition on glass or silicon Message-ID: <116.d606493.29b7b826@aol.com> You might try to do oxygen plasma clean prior to deposition and during the deposition use an rf clean prior to Pt dep. Bob Henderson From sandoval@cts-design.com Wed Mar 6 18:24:41 2002 From: sandoval@cts-design.com (F. Sandoval-Ibarra) Date: Wed, 06 Mar 2002 12:24:41 -0600 Subject: [mems-talk] ion exchange simulator References: Message-ID: <3C865EE9.5693D5E9@cts-design.com> Hi Isabel This is F. Sandoval writing you from Guadalajara, Mixico. El Grupo de Potencia del Instituto de Microelectrsnica de Barcelona, CNM-CSIC (www.cnm.es/imb/), en el pasado reciente desarrolls una herramienta CAD para los propssitos que seqalas. La persona de contacto es Josi Millan (jose.millan@cnm.es) y/o Xavi Jorda (xavier.jorda@cnm.es) Good luck F. Sandoval Analog Design Group CINVESTAV-Guadalajara Mixico "Rivas, Isabel" wrote: > Hello, > > I'm looking for a freeware program to simulate the process of field assisted > ion diffusion into materials (like glass). I would thank any suggestion on > the matter. > > Best regards, > > Isabel. > > Isabel Rivas Guerrero > irivas@ceit.es > > CEIT, Seccisn de Microelectrsnica. > > Paseo de Manuel Lardizabal, 15. > > 20018 San Sebastian, Spain > > Tel.: (34) 943 212 800 > > Fax.: (34) 943 213 076 > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From gmiller@kvh.com Wed Mar 6 22:23:18 2002 From: gmiller@kvh.com (Greg Miller) Date: Wed, 6 Mar 2002 17:23:18 -0500 Subject: [mems-talk] Problem in etching Al and Pt Message-ID: You might want to try AZ MIF 327 Photoresist developer - you might stand a better chance of etching your Al film - its very slow but works quite well. Greg Miller KVH -----Original Message----- From: Hoyin [mailto:hychan@acae.cuhk.edu.hk] Sent: Monday, March 04, 2002 9:38 AM To: mems-talk@memsnet.org Subject: [mems-talk] Problem in etching Al and Pt Hi all, I have got a simple question. I want to sacrifically release my = device by etching Al. However, one of the layer is Pt. Will the Al = etchant etch Pt ??? What etchant do you suggest?? Thank you very much!!! Hoyin _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From sandoval@cts-design.com Thu Mar 7 00:13:32 2002 From: sandoval@cts-design.com (F. Sandoval-Ibarra) Date: Wed, 06 Mar 2002 18:13:32 -0600 Subject: [mems-talk] resistor model Message-ID: <3C86B0AB.33807B84@cts-design.com> Hello all It is well known that integrated resistors have temperature dependence. About MOSIS, AMI 1.55m CMOS process, N-well, somebody knows the temperature coefficient value (ppm/K)? I'm interested in the following resistors: Poly Poly2 Ndif Pdif N-well P base Thanks in advance F. Sandoval-Ibarra Analog Design Group CINVESTAV-Guadalajara, Mixico www.gdl.cinvestav.mx From yaopeng@UDel.Edu Thu Mar 7 01:01:34 2002 From: yaopeng@UDel.Edu (Peng Yao) Date: Wed, 6 Mar 2002 20:01:34 -0500 (EST) Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: Hi all, I am looking for a way to etch SiO2 with my RIE. What kind of gas is necessary for this work. Thank you very much! leo DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 From ks98105@yahoo.com Thu Mar 7 02:09:44 2002 From: ks98105@yahoo.com (K. Sayavong) Date: Wed, 6 Mar 2002 18:09:44 -0800 Subject: [mems-talk] Dallas Area MEMS Companies? Message-ID: <002701c1c57d$279d7920$6601a8c0@attbi.com> Where can I get a complete list of companies in the MEMS industry that are based in the Dallas/Ft. Worth area? I am planning on moving down there to study/work. Thanks. Kham From frank_berauer@hp.com Thu Mar 7 03:41:25 2002 From: frank_berauer@hp.com (BERAUER,FRANK (HP-Singapore,ex7)) Date: Thu, 7 Mar 2002 11:41:25 +0800 Subject: [mems-talk] High temperature Message-ID: <2CFFECBFFEEEAF4DB4B2EB9BD47A736639962E@xsg07.sgp.hp.com> It would be interesting to know about any electronic application that works at such temperatures. Certainly not based on Si (melting point 1414 deg C). Can you tell us more about what you have in mind? Thanks! Greetings, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore -----Original Message----- From: Hogedoorn, Armanda [mailto:hogedoorn@pml.tno.nl] Sent: Wednesday, March 06, 2002 10:48 PM To: 'mems-talk@memsnet.org' Subject: [mems-talk] High temperature Hello, I am looking for a good packaging/packaging material voor MEMS and IC, which is capable of high temperatures (up to 3200 degrees celcius). Does someone know which material I can use, or a company who makes these packages? And, does someone know a company who makes MEMS temperature-sensors for these high temperatures. Thanks, Armanda T. Hogedoorn hogedoorn@pml.tno.nl TNO- Prins Maurits Laboratory http://www.pml.tno.nl P.O. Box 45 2080 AA RIJSWIJK (ZH) The Netherlands Tel: +31 (0)15 284 3076 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From eenjrt@elec-eng.leeds.ac.uk Thu Mar 7 08:58:02 2002 From: eenjrt@elec-eng.leeds.ac.uk (JAMES.R.THORPE) Date: Thu, 7 Mar 2002 08:58:02 GMT Subject: [mems-talk] Pt deposition on glass or silicon In-Reply-To: References: Message-ID: <80B7E282FC6@elec-eng.leeds.ac.uk> Another trick you could try is to anneal the Pt coated substrates. I've done this with Ag coated glass slides (220 degC for 1 minute in an N2 atmosphere) and seen a marked improvement in film adhesion. Rgds Jim. *********************************************** Dr Jim Thorpe Research Fellow Institute of Microwaves and Photonics School of Electronic and Electrical Engineering The University of Leeds Leeds LS2 9JT United Kingdom Tel: +44 (0)113 233 2049 (Office) Tel: +44 (0)113 233 2084 (Lab) Fax: +44 (0)113 244 9451 *********************************************** From christopher.blanford@chemistry.oxford.ac.uk Thu Mar 7 08:55:34 2002 From: christopher.blanford@chemistry.oxford.ac.uk (Christopher Blanford) Date: Thu, 7 Mar 2002 08:55:34 +0000 (GMT) Subject: [mems-talk] Fatigue in thin films of poly-Si Message-ID: Dear listers I thought this article was worth sharing. It came out in the 4 March issue of Applied Physics Letters from UC Berkeley and LBNL. Title: "Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems" Authors: C.L. Muhlstein, E.A. Stach, R.O. Ritchie Abstract: Reported nearly a decade ago, cyclic fatigue failure in silicon thin films has remained a mystery. Silicon does not display the room-temperature plasticity or extrinsic toughening mechanisms necessary to cause fatigue in either ductile (e.g., metals) or brittle (e.g., ceramics and ordered intermetallics) materials. This letter presents experimental evidence for the cyclic fatigue of silicon via a conceptually different mechanism termed reaction-layer fatigue. Based on mechanical testing, electron microscopy, and self-assembled monolayers, we present direct observation of fatigue-crack initiation in polycrystalline silicon, the mechanism of crack initiation, and a method for altering fatigue damage accumulation. Reference: Applied Physics Letters (2000) 80, 15321534 -- Christopher F. Blanford Inorganic Chemistry Laboratory, South Parks Road, Oxford, OX1 3QR, UK Phone: (44)/(0)-1865-282603; Fax: (44)/(0)-1865-272690 PGP keyID: 356CC429 http://pgp.ai.mit.edu/ From frank_berauer@hp.com Thu Mar 7 09:52:37 2002 From: frank_berauer@hp.com (BERAUER,FRANK (HP-Singapore,ex7)) Date: Thu, 7 Mar 2002 17:52:37 +0800 Subject: [mems-talk] Wafer Bonding Information? Message-ID: <2CFFECBFFEEEAF4DB4B2EB9BD47A7366399630@xsg07.sgp.hp.com> Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore From mawei@ust.hk Thu Mar 7 14:26:53 2002 From: mawei@ust.hk (ll) Date: Thu, 7 Mar 2002 22:26:53 +0800 (HKT) Subject: [mems-talk] inertial sensor testing Message-ID: Dear group members, Now I suffer a problem on inertial switch testing. My switch is made of spring-mass structure which can sensitive to acceleration. When there is a accelaration, the switch will be in ON state. Now I put it on a shaker(sinusoidal input) to test it using the theory that the displacement of my switch's mass will be larger when my switch is vibrating at its resonant frequency. My switch's resonant frequency is about 18kHz (it is a little high:). ), the mass need to travel 10micron to reach its ON state. SO here comes my PROBLEM: I sweep my shaker output frequency from 100Hz to 20kHz BUT can't get any ON signal!!! Does anyone has experience of this situation? It can be vibrated at its resonant frequency even this frequency is high, is that right? Is 10 micron a large displacement for micro device to travel? Is there other method to detect if the device does vibrate and also its resonant frequency? Please pay attension to my long story and give me wonderful reply:) Best, Vickie From rshile@tmmicro.com Thu Mar 7 17:27:20 2002 From: rshile@tmmicro.com (Roger Shile) Date: Thu, 07 Mar 2002 09:27:20 -0800 Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: Most any fluorine based chemistry should work, CF4, SF6, etc. If you want selectivity over underlying Si, use CHF3. Roger Shile >>> yaopeng@UDel.Edu 03/06/02 05:01PM >>> Hi all, I am looking for a way to etch SiO2 with my RIE. What kind of gas is necessary for this work. Thank you very much! leo DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From John.Milliken@Fluor.com Thu Mar 7 17:28:10 2002 From: John.Milliken@Fluor.com (John.Milliken@Fluor.com) Date: Thu, 7 Mar 2002 09:28:10 -0800 Subject: [mems-talk] Dallas Area MEMS Companies? Message-ID: Kham, I coincidentally received a call yesterday from a recruiter looking for a MEMS engineer. My company builds facilities for manufacturing firms but does not manufacture MEMS. You might try this contact. Mr. Alton Seymour 1-972-239-6572 Good Luck John Milliken Project Manager, Fluor Daniel 15242 NW Greenbrier Parkway Beaverton, OR 97006 (503) 533-4466 fax 629-8977 "K. Sayavong" m> Sent by: cc: mems-talk-admin@m emsnet.org Subject: [mems-talk] Dallas Area MEMS Companies?. 03/06/2002 06:09 PM . Please respond to mems-talk Where can I get a complete list of companies in the MEMS industry that are based in the Dallas/Ft. Worth area? I am planning on moving down there to study/work. Thanks. Kham _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ ----------------------------------------------------------------------------------------------------- The information transmitted is intended only for the person or entity to which it is addressed and may contain confidential and/or privileged material. If you are not the intended recipient of this message you are hereby notified that any use, review, retransmission, dissemination, distribution, reproduction or any action taken in reliance upon this message is prohibited. If you received this in error, please contact the sender and delete the material from any computer. Any views expressed in this message are those of the individual sender and may not necessarily reflect the views of the company. ------------------------------------------------------------------------------------------------------- From yaopeng@UDel.Edu Thu Mar 7 17:33:00 2002 From: yaopeng@UDel.Edu (Peng Yao) Date: Thu, 7 Mar 2002 12:33:00 -0500 (EST) Subject: [mems-talk] selectivity between silicon nitride and silicon Message-ID: Hi, I am going to etch silicon using silicon nitride as the mask. But I only have CF4, SF6, O2 and He... I am not sure if those gases are enough for my application or I need to order some new gases. Thanks. Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 From pedersen@mems-exchange.org Thu Mar 7 18:08:37 2002 From: pedersen@mems-exchange.org (Michael Pedersen) Date: Thu, 07 Mar 2002 13:08:37 -0500 Subject: [mems-talk] selectivity between silicon nitride and silicon References: Message-ID: <3C87ACA5.5000209@mems-exchange.org> Hi Peng, Selectivity between silicon nitride and silicon is not good in most dry etch systems. You can etch with CF4/SF6 but the selectivity typically will be close to 1:1. Michael Pedersen The MEMS Exchange Peng Yao wrote: > Hi, > I am going to etch silicon using silicon nitride as the mask. But I only > have CF4, SF6, O2 and He... I am not sure if those gases are enough for my > application or I need to order some new gases. > Thanks. From vic@gennano.com Thu Mar 7 10:26:24 2002 From: vic@gennano.com (Vic Kley) Date: Thu, 7 Mar 2002 10:26:24 -0000 Subject: [mems-talk] inertial sensor testing References: Message-ID: <052c01c1c5c2$88efaaa0$6400a8c0@pacbell.net> Just because it resonates doesn't mean that the AMPLITUDE of the resonance is +/- 10 microns. This will depend on the spring constant over the operating range (presumably +/11 microns or more) and the excitation energy. Another way to put this is turn up the volume! At 18khz an audio drive would work just fine, and you can buy mucho watts (excitation energy) real cheap. Vic ----- Original Message ----- From: ll To: Sent: Thursday, March 07, 2002 2:26 PM Subject: [mems-talk] inertial sensor testing > Dear group members, > > Now I suffer a problem on inertial switch testing. My switch is made of > spring-mass structure which can sensitive to acceleration. When there is a > accelaration, the switch will be in ON state. Now I put it on a > shaker(sinusoidal input) to test it using the theory that the displacement > of my switch's mass will be larger when my switch is vibrating at its > resonant frequency. My switch's resonant frequency is about 18kHz (it is a > little high:). ), the mass need to travel 10micron to reach its ON state. > > SO here comes my PROBLEM: I sweep my shaker output frequency from 100Hz to > 20kHz BUT can't get any ON signal!!! > > Does anyone has experience of this situation? > > It can be vibrated at its resonant frequency even this frequency is high, > is that right? > > Is 10 micron a large displacement for micro device to travel? > > Is there other method to detect if the device does vibrate and also its > resonant frequency? > > Please pay attension to my long story and give me wonderful reply:) > > Best, > > Vickie > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From TThurston@suss.com Thu Mar 7 19:06:14 2002 From: TThurston@suss.com (Tim Thurston) Date: Thu, 07 Mar 2002 14:06:14 -0500 Subject: [mems-talk] Wafer Bonding Information? Message-ID: Karl SuSS, now SuSS Micro Tec makes bonding equipment, their web site is sussmicrotec.com it may also contain some info on the apps. side From aminalimari@rogers.com Thu Mar 7 20:00:31 2002 From: aminalimari@rogers.com (Amin Abdul-Fattah) Date: Thu, 7 Mar 2002 15:00:31 -0500 Subject: [mems-talk] High temperature References: <2CFFECBFFEEEAF4DB4B2EB9BD47A736639962E@xsg07.sgp.hp.com> Message-ID: <001b01c1c612$bccc4860$7ace6618@rchrd.phub.net.cable.rogers. com> My thesis was a chip that is cooled using microchannels that passes fluid in it to bring chip high temp. down and then you might use what is available of packaging technics (you should connect the microchannels to micro-pump. Good luck. Amin Abdul-Fattah ATE Ottawa-Canada ----- Original Message ----- From: "BERAUER,FRANK (HP-Singapore,ex7)" To: Sent: Wednesday, March 06, 2002 10:41 PM Subject: RE: [mems-talk] High temperature > It would be interesting to know about any electronic application that works > at such temperatures. Certainly not based on Si (melting point 1414 deg C). > Can you tell us more about what you have in mind? Thanks! > > Greetings, > Frank Berauer > Senior R&D Engineer > Hewlett-Packard Singapore > > > -----Original Message----- > From: Hogedoorn, Armanda [mailto:hogedoorn@pml.tno.nl] > Sent: Wednesday, March 06, 2002 10:48 PM > To: 'mems-talk@memsnet.org' > Subject: [mems-talk] High temperature > > > Hello, > > I am looking for a good packaging/packaging material voor MEMS and IC, which > is capable of high temperatures (up to 3200 degrees celcius). Does someone > know which material I can use, or a company who makes these packages? And, > does someone know a company who makes MEMS temperature-sensors for these > high temperatures. > > Thanks, > > Armanda T. Hogedoorn > hogedoorn@pml.tno.nl > > TNO- Prins Maurits Laboratory > http://www.pml.tno.nl > P.O. Box 45 > 2080 AA RIJSWIJK (ZH) > The Netherlands > > Tel: +31 (0)15 284 3076 > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From BobHendu@aol.com Thu Mar 7 20:36:08 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Thu, 7 Mar 2002 15:36:08 EST Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: There are many choices depending on the results you are looking to obtain. CF4+4to8% O2 is pretty standard for oxide etching. You will probably need to combine that with Helium to produce uniform results. We have also used SF6 + Helium and it has some advantages with respect to etch rate and selectivity to resist. If you would like to discuss further with things like etch thickness desired, masking material and other details just drop me an email. Bob Henderson From BobHendu@aol.com Thu Mar 7 20:40:29 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Thu, 7 Mar 2002 15:40:29 EST Subject: [mems-talk] selectivity between silicon nitride and silicon Message-ID: <11a.d1c33dc.29b92a3d@aol.com> I am afraid you will find that using those gases to etch silicon will also etch your silcon nitride mask. You might be better off using photoresist as your masking material. What shape are you looking for in the silicon etch. Anisotropic or isotropic. How much undercut can you stand between interface of the masking material and the silicon interface? Drop me a line and I will discuss further with you. Bob Henderson From rwilliston@bigbangwidth.com Thu Mar 7 21:02:23 2002 From: rwilliston@bigbangwidth.com (Rick Williston) Date: Thu, 7 Mar 2002 14:02:23 -0700 Subject: [mems-talk] High temperature In-Reply-To: <001b01c1c612$bccc4860$7ace6618@rchrd.phub.net.cable.rogers . com> Message-ID: <004d01c1c61b$61a36780$730aa8c0@D5K2RF01> Ouch! A pretty tough application indeed! I think you will have to relax on some of your criteria or be a little more specific on what you are trying to achieve. For instance - at those temperatures, Si might even work but AS THE LIQUID; it doesn't vaporize until above 3200C. The problem is that below its melting point your pump might have a hard time pumping when it's a solid. - diamond could work at those temperatures but a) I am sure that it would be expensive and difficult to form even simple devices and b) it has the best thermal conductivity going so the presence of your liquid in channels would make cooling things worse, not better. Can you just place your device on a diamond heat sink? - if this can't work, you are left with refractory metals like tungsten as the only solids that can remain solid and be formed (albeit not too easily). The choice of a suitable cooling fluid that remains in liquid form from room temp to 3200+ degrees still eludes me, however. I think the diamond heat sink is much simpler. It does depend upon what your ambient atmosphere is, as diamond probably will be oxidized in air at close to these temperatures and cause you grief. Hope this helps Cheers, Rick Williston Manager, Nanofabrication BigBangwidth Inc. Edmonton, AB -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of Amin Abdul-Fattah Sent: Thursday, March 07, 2002 1:01 PM To: mems-talk@memsnet.org Subject: Re: [mems-talk] High temperature My thesis was a chip that is cooled using microchannels that passes fluid in it to bring chip high temp. down and then you might use what is available of packaging technics (you should connect the microchannels to micro-pump. Good luck. Amin Abdul-Fattah ATE Ottawa-Canada From arazavi@pmrc.marc.gatech.edu Thu Mar 7 21:14:07 2002 From: arazavi@pmrc.marc.gatech.edu (Ali Razavi) Date: Thu, 7 Mar 2002 16:14:07 -0500 Subject: [mems-talk] Wafer Bonding Information? Message-ID: <51502FA7FFF3D4118B7300600819C5010D1279@pmrc.marc.gatech.edu > Hi, You may want to have a look at the followings: 1. Tong, Q. and Gosele, U., Semiconductor Wafer Bonding Science and Technology, John Wiley, 1999. 2. Schmidt, M. A., "Wafer to Wafer Bonding for Microstructure Formation," Proceedings of IEEE, Vol. 86, no. 8, pp. 1575-1585, 1998. Regards, Ali :) ******************************************************************** Ali Razavi Postdoctoral Fellow Room 455, Manufacturing Research Center Gerogia Institute of Technology, Atlanta, GA 30332-0405 Phone: 678-637-1634, Fax: 404-894-9342 E-mail: arazavi@pmrc.marc.gatech.edu ******************************************************************** -----Original Message----- From: BERAUER,FRANK (HP-Singapore,ex7) To: 'mems-talk@memsnet.org' Sent: 3/7/02 4:52 AM Subject: [mems-talk] Wafer Bonding Information? Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From rshile@tmmicro.com Thu Mar 7 22:43:05 2002 From: rshile@tmmicro.com (Roger Shile) Date: Thu, 07 Mar 2002 14:43:05 -0800 Subject: [mems-talk] selectivity between silicon nitride and silicon Message-ID: SiO2 would probably provide a better mask, but if you don't need to etch very deep the nitride might suffice. Better yet if you have resist on top of the nitride as extra protection. SF6 is an excellent etchant for Si using RIE. Roger Shile >>> yaopeng@UDel.Edu 03/07/02 09:33AM >>> Hi, I am going to etch silicon using silicon nitride as the mask. But I only have CF4, SF6, O2 and He... I am not sure if those gases are enough for my application or I need to order some new gases. Thanks. Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From adam@wengrow.com Thu Mar 7 22:50:36 2002 From: adam@wengrow.com (Adam Wengrow) Date: Thu, 07 Mar 2002 14:50:36 -0800 Subject: [mems-talk] RE: Wafer Bonding Information? In-Reply-To: Message-ID: Frank, a real nice text on bonding is SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR WAFER BONDING by Gvsele and Tong, out of Duke. ADAM -----Original Message----- From: "BERAUER,FRANK (HP-Singapore,ex7)" To: "'mems-talk@memsnet.org'" Date: Thu, 7 Mar 2002 17:52:37 +0800 Subject: [mems-talk] Wafer Bonding Information? Reply-To: mems-talk@memsnet.org Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore From yaopeng@UDel.Edu Thu Mar 7 23:05:40 2002 From: yaopeng@UDel.Edu (Peng Yao) Date: Thu, 7 Mar 2002 18:05:40 -0500 (EST) Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: Hi Bob, I am using PhotoResist as the mask during etching. And the thickness I want is about 1.5 micron. Actually, I want etch both the photoresist and the SiO2 at the same etching rate, so that I can transfer the gray scale structure of my photoresist to SiO2. I have tried using CF4+O2, but my glass sample was really tough to be get rid of. I am thinking one of the possible reason is that the glass sample I used, which is actrually used as microscope cover... Maybe I have to buy some silica wafer to do this work. Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 From c.brubaker@evgroup.com Thu Mar 7 23:51:28 2002 From: c.brubaker@evgroup.com (Brubaker Chad) Date: Thu, 7 Mar 2002 16:51:28 -0700 Subject: [mems-talk] Wafer Bonding Information? Message-ID: <1DD2B880949BD311907B0050040C0A243DE26A@MAGELLAN> Dear Frank, Wow!! This is a tremendously broad question. An overview of wafer bonding techniques, along with which materials can be bonded? Actually, the second question is easier. Technically, anything can be bonded to anything (or nearly so). However, as you mentioned, the method is important. First and foremost, your biggest issue with wafer bonding is the Thermal Coefficient of Expansion (TCE) for each material. Once two differing materials are bonded together, any change of temperature can cause a stress gradient, as one of the materials expands more rapidly than the other. That said, there are three basic bonding processes: 1) Anodic Bonding - this is the use of electricity in combination with elevated temperatures to perform a bond between an ion bearing glass and an oxidizable metal. 2) Thermocompression Bonding - Bonding using an intermediate layer, along with a combination of heat and pressure, to create a bond between two substrates. 3) Direct bonding - bonding of two extremely smooth surfaces directly, without use of intermediate layer or electricity. This will typicaly require a high temperature anneal after bonding. A good overview paper would be A.R. Mirza and A. A. Ayon. "Silicon Wafer Bonding: Key to MEMS High-Volume Manufacturing", Sensors, Vol. 15, no. 12 1998. As to manufacturers for bonding equipment, EV Group has been manufacturing bonding equipment for over ten years, and has extensive experience in the field. Please visit our web site at www.evgroup.com. Best Regards, Chad Brubaker EV Group-Technology, Tel: (602) 437 9492 x 119, Fax: (602) 437 9435 E-mail: C.Brubaker@evgroup.com, Web: www.EVGroup.com, 03/07/02 -----Original Message----- From: BERAUER,FRANK (HP-Singapore,ex7) [mailto:frank_berauer@hp.com] Sent: Thursday, March 07, 2002 2:53 AM To: 'mems-talk@memsnet.org' Subject: [mems-talk] Wafer Bonding Information? Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From dick@imtmems.com Fri Mar 8 01:33:37 2002 From: dick@imtmems.com (Martin, Dick) Date: Thu, 7 Mar 2002 17:33:37 -0800 Subject: [mems-talk] High temperature Message-ID: 3200 Degrees C!!! That is HOT! It is what the Layman would call "White Hot". The CRC Applied Engineering Science Handbook lists 16 "Common Refractory Materials" The only one that has not melted at 3200C is graphite and it is heavily sublimating at 3590 C. Of the metals, only Tungsten has not melted. Rhenium melted at 3180 C. Normally optical techniques are used to measure these temperatures, such as an optical pyrometer. I am really curious....What are you trying? Dick Martin Principal Engineer innovative micro technology 75 robin hill road *goleta, ca 93117 ph: 805-681-2800 * fx: 805-967-2677 info@imtmems.com * www.imtmems.com _________________________________________ "Your strategic partner for MEMS design and 6" wafer manufacturing services with 0.355m photolithography, 30,000 sq. ft. fab, and non-CMOS materials flexibility, including metals/magnetics." -----Original Message----- From: Hogedoorn, Armanda [mailto:hogedoorn@pml.tno.nl] Sent: Wednesday, March 06, 2002 6:48 AM To: 'mems-talk@memsnet.org' Subject: [mems-talk] High temperature Hello, I am looking for a good packaging/packaging material voor MEMS and IC, which is capable of high temperatures (up to 3200 degrees celcius). Does someone know which material I can use, or a company who makes these packages? And, does someone know a company who makes MEMS temperature-sensors for these high temperatures. Thanks, Armanda T. Hogedoorn hogedoorn@pml.tno.nl TNO- Prins Maurits Laboratory http://www.pml.tno.nl P.O. Box 45 2080 AA RIJSWIJK (ZH) The Netherlands Tel: +31 (0)15 284 3076 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From MFAChollet@ntu.edu.sg Fri Mar 8 02:09:15 2002 From: MFAChollet@ntu.edu.sg (Franck Alexis Chollet (Asst Prof)) Date: Fri, 8 Mar 2002 10:09:15 +0800 Subject: [mems-talk] inertial sensor testing Message-ID: <9C9309FA33DB90499DE4B818889DF6F714F34A@exchange01.staff.mai n.ntu.edu.sg> A few more wild guesses here : - you say the resonant frequency is 18kHz, is it measured or computed? In the later case you may easily be off by 20% or more compared to your device - at 20kHz you don't reach the resonance... - you detect the contact of the mass with a counter electrodes it seems, the contact duration will be very short (impact) and the contact force may be small, and what about the roughness of material in contact, and the materials used - in short you may have a hard time to detect the contact even if it happens... You may want to look in the papers about 'vibro scanning method' from the team of T. Masuzawa at the U. of Tokyo, they had similar problems - but not for acceleration measurement. Good luck, Franck "-----Original Message----- "From: Vic Kley [mailto:vic@gennano.com] "Sent: Thursday, 07 March, 2002 18:26 "To: mems-talk@memsnet.org "Subject: Re: [mems-talk] inertial sensor testing " " "Just because it resonates doesn't mean that the AMPLITUDE of "the resonance "is +/- 10 microns. This will depend on the spring constant over the "operating range (presumably +/11 microns or more) and the "excitation energy. "Another way to put this is turn up the volume! At 18khz an "audio drive would "work just fine, and you can buy mucho watts (excitation "energy) real cheap. " "Vic " "----- Original Message ----- "From: ll "To: "Sent: Thursday, March 07, 2002 2:26 PM "Subject: [mems-talk] inertial sensor testing " " "> Dear group members, "> "> Now I suffer a problem on inertial switch testing. My switch "is made of "> spring-mass structure which can sensitive to acceleration. "When there is a "> accelaration, the switch will be in ON state. Now I put it on a "> shaker(sinusoidal input) to test it using the theory that "the displacement "> of my switch's mass will be larger when my switch is vibrating at its "> resonant frequency. My switch's resonant frequency is about "18kHz (it is a "> little high:). ), the mass need to travel 10micron to reach "its ON state. "> "> SO here comes my PROBLEM: I sweep my shaker output frequency "from 100Hz to "> 20kHz BUT can't get any ON signal!!! "> "> Does anyone has experience of this situation? "> "> It can be vibrated at its resonant frequency even this "frequency is high, "> is that right? "> "> Is 10 micron a large displacement for micro device to travel? "> "> Is there other method to detect if the device does vibrate "and also its "> resonant frequency? "> "> Please pay attension to my long story and give me wonderful reply:) "> "> Best, "> "> Vickie "> _______________________________________________ "> mems-talk@memsnet.org mailing list: to unsubscribe or change "your list "> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From anshu_mehta@yahoo.com Fri Mar 8 04:00:10 2002 From: anshu_mehta@yahoo.com (anshu mehta) Date: Thu, 7 Mar 2002 20:00:10 -0800 (PST) Subject: [mems-talk] SU-8 exposure and parylene Message-ID: <20020308040010.59481.qmail@web20009.mail.yahoo.com> Hi I am using Su-8 5 as a structural layer for my device. I looked up Microchem website and they give the exposure in terms of mJ/cm2. Is it possible to find a rough estimate for exposure time on a particular aligner using the mJ/cm2 data? Also, I wanted to know if it possible to pattern parylene? Thanks, Anshu mehta. > Try FREE Yahoo! Mail - the world's greatest free > email! > http://mail.yahoo.com/ Try FREE Yahoo! Mail - the world's greatest free email! http://mail.yahoo.com/ From s.wiechmann@tu-harburg.de Fri Mar 8 08:11:13 2002 From: s.wiechmann@tu-harburg.de (Stefan Wiechmann) Date: Fri, 8 Mar 2002 09:11:13 +0100 Subject: [mems-talk] how to etch SiO2 with RIE In-Reply-To: Message-ID: I am also using CHF3+O2 to etch SiO2/Photoresist and wonder how helium helps to improve uniformity ? Stefan Wiechmann _______________________________________________ Von: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]Im Auftrag von BobHendu@aol.com Gesendet: Donnerstag, 7. Marz 2002 21:36 An: mems-talk@memsnet.org Betreff: Re: [mems-talk] how to etch SiO2 with RIE There are many choices depending on the results you are looking to obtain. CF4+4to8% O2 is pretty standard for oxide etching. You will probably need to combine that with Helium to produce uniform results. We have also used SF6 + Helium and it has some advantages with respect to etch rate and selectivity to resist. If you would like to discuss further with things like etch thickness desired, masking material and other details just drop me an email. Bob Henderson _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From Orjan.Vallin@angstrom.uu.se Fri Mar 8 08:14:15 2002 From: Orjan.Vallin@angstrom.uu.se (Orjan Vallin) Date: Fri, 8 Mar 2002 09:14:15 +0100 Subject: [mems-talk] Re: Wafer Bonding Information? In-Reply-To: Message-ID: Dear Frank, For the best review on waferbonding (in my opinion) please refer to: 'Wafer direct bonding: tailoring adhesion between brittle materials', Andreas Ploessl and Gertrud Krauter, Materials Science and Engineering, R25 (1999) pp 1-88. Orjan Vallin >Message: 8 >From: "BERAUER,FRANK (HP-Singapore,ex7)" >To: "'mems-talk@memsnet.org'" >Date: Thu, 7 Mar 2002 17:52:37 +0800 >Subject: [mems-talk] Wafer Bonding Information? >Reply-To: mems-talk@memsnet.org > >Dear fellow MEMS researchers, > >I would like to get an overview of wafer bonding techniques. >I am especially interested to know which materials can be bonded >together by which bonding techniques and what advantages and dis- >advantages there are. Also, which equipment manufacturers there >are. I would be grateful if somebody can point me to good sources >of information or literature. > >Thanks and have a nice day, > Frank Berauer > Senior R&D Engineer > Hewlett-Packard Singapore ------------------------------------------------------------------------------ Orjan Vallin Tel: +46-18-4717254 Uppsala University Fax: +46-18-555095 The Angstrom Laboratory Solid State Electronics P.O.Box 534, S-751 21 UPPSALA, Sweden ------------------------------------------------------------------------------ From aml@tonyrogers.freeserve.co.uk Fri Mar 8 11:01:05 2002 From: aml@tonyrogers.freeserve.co.uk (Tony Rogers) Date: Fri, 8 Mar 2002 11:01:05 -0000 Subject: [mems-talk] Wafer Bonding Information? In-Reply-To: <2CFFECBFFEEEAF4DB4B2EB9BD47A7366399630@xsg07.sgp.hp.com> Message-ID: Hello Frank, At AML we run courses on wafer bonding as well as being a wafer bonding equipment manufacturer. You can get details from our website, www.aml.co.uk. Regards Tony Tony Rogers Applied Microengineering Ltd 173 Curie Avenue Didcot OX11 0QG Tel.: +44 (0)1235 833934 Fax: +44 (0)1235 833935 e-mail: tony@aml.co.uk Web:http://www.aml.co.uk -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of BERAUER,FRANK (HP-Singapore,ex7) Sent: 07 March 2002 09:53 To: 'mems-talk@memsnet.org' Subject: [mems-talk] Wafer Bonding Information? Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From irivas@ceit.es Fri Mar 8 12:37:50 2002 From: irivas@ceit.es (Rivas, Isabel) Date: Fri, 8 Mar 2002 13:37:50 +0100 Subject: [mems-talk] CO2 sensor Message-ID: Hello, I' m interested in developing a capacitive CO2 sensor with a polymer as sensitive layer. Does anyone have experience with this kind of sensor? What kind of polymer could be better for this application?. Thank you for your time. Best regards, Isabel. Isabel Rivas Guerrero irivas@ceit.es > CEIT, Microelectronic section > Paseo de Manuel Lardizabal, 15. > 20018 San Sebastian, Spain From H.Luesebrink@RI.EVGroup.com Fri Mar 8 13:47:38 2002 From: H.Luesebrink@RI.EVGroup.com (Luesebrink Helge) Date: Fri, 8 Mar 2002 08:47:38 -0500 Subject: [mems-talk] Wafer Bonding Information? Message-ID: Frank, Check out http://www.evgroup.com/products/waferbonding.htm You'll find as well technical papers and other useful information. Best regards, Helge -----Original Message----- From: BERAUER,FRANK (HP-Singapore,ex7) [mailto:frank_berauer@hp.com] Sent: Thursday, March 07, 2002 4:53 AM To: 'mems-talk@memsnet.org' Subject: [mems-talk] Wafer Bonding Information? Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From d877101@oz.nthu.edu.tw Fri Mar 8 14:02:20 2002 From: d877101@oz.nthu.edu.tw (Yun-Ju Chuang) Date: Fri, 8 Mar 2002 22:02:20 +0800 Subject: [mems-talk] Problem in etching Al and Pt References: Message-ID: <001f01c1c6a9$dd6c00a0$5e6c728c@ess.nthu.edu.tw> Hi, Besides AZ MIF327, you may try AZ 400K developer. I think you could try this Al etchant H3PO4:HNO3:CH3COOH:DI=16:1:1:2 . We used this etchant to pattern Al as interconnecton line on Pt resistor. Yun-Ju Chuang ----- Original Message ----- From: "Greg Miller" To: Sent: Thursday, March 07, 2002 6:23 AM Subject: RE: [mems-talk] Problem in etching Al and Pt > You might want to try AZ MIF 327 Photoresist developer - you might stand > a better chance of etching your Al film - its very slow but works quite > well. > > Greg Miller > KVH > > -----Original Message----- > From: Hoyin [mailto:hychan@acae.cuhk.edu.hk] > Sent: Monday, March 04, 2002 9:38 AM > To: mems-talk@memsnet.org > Subject: [mems-talk] Problem in etching Al and Pt > > > Hi all, > > I have got a simple question. I want to sacrifically release my = > device by etching Al. However, one of the layer is Pt. Will the Al = > etchant etch Pt ??? What etchant do you suggest?? > > Thank you very much!!! > > Hoyin > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From cdimas@excite.com Fri Mar 8 15:10:26 2002 From: cdimas@excite.com (Clara Dimas) Date: Fri, 8 Mar 2002 10:10:26 -0500 (EST) Subject: [mems-talk] Wire Bonding Protocal Message-ID: <20020308151026.D0DAC109EBA@xprdmailfe.excite.com> I would like to learn more on automatic wire bonding protocals. Is there a limit to the angles in which a bond is made and its length? When bonding onto a chip carier with various level, can the bottom (closer) row have bonds at -60 degrees while the top row have bonds at +60 degrees? Any advice would be greatly apreciated! Thanks cdimas@excite.com ------------------------------------------------------------------------ From hogedoorn@pml.tno.nl Fri Mar 8 15:12:33 2002 From: hogedoorn@pml.tno.nl (Hogedoorn, Armanda) Date: Fri, 8 Mar 2002 16:12:33 +0100 Subject: [mems-talk] High temperature application Message-ID: Hello, Thank you for your response so far. It looks like I made everybody curious about what I want to try to do. So, I shall explain a few things. I investigate the use of microsensors in rocketpropulsion. I look for microsensors with are available, and I can use for my applications. An applications is to test and monitor the igniters. Unfortunately, the packaging of the sensors I found are not capable for the high temperatures e.g. in the combustion chamber or around it. Also, the sensors can not measure the high temperatures. That is why I am looking for packing up to 3200 degrees Celcius, so that maybe our production department or another campany can create my perfect sensor for pressure, temperature, stress and strain measurement. Greetings, Armanda T. Hogedoorn hogedoorn@pml.tno.nl TNO- Prins Maurits Laboratory http://www.pml.tno.nl P.O. Box 45 2080 AA RIJSWIJK (ZH) The Netherlands Tel: +31 (0)15 284 3076 From fowler@seas.ucla.edu Fri Mar 8 15:15:03 2002 From: fowler@seas.ucla.edu (Mighty Platypus) Date: Fri, 8 Mar 2002 07:15:03 -0800 (PST) Subject: [mems-talk] SU-8 exposure and parylene In-Reply-To: <20020308040010.59481.qmail@web20009.mail.yahoo.com> Message-ID: On Thu, 7 Mar 2002, anshu mehta wrote: > Hi Greetings! > I am using Su-8 5 as a structural layer for my > device. I looked up Microchem website and they give > the exposure in terms of mJ/cm2. Is it possible to > find a rough estimate for exposure time on a > particular aligner using the mJ/cm2 data? Well, our aligner (Karl Suss) has a sensor that measures the exposure power (mW/cm2). Finding the dose from that is pretty simple, assuming it's a linear relationship. > > Also, I wanted to know if it possible to pattern > parylene? I have patterned parylene with O2 plasma in an RIE. Selectivity with PR is about 1:1, and you may find that you have to roughen the parylene to get the PR to stick to it during spin coating. I roughened using O2 plasma for a very short time (10 seconds on my machine). If you're patterning it with SU-8, I suspect you won't have to roughen it. > > Thanks, > Anshu mehta. You're welcome, Jesse Fowler UCLA/MAE Dept., 420 Westwood Plaza, Room 18-121, ENGR IV Los Angeles, CA 90095-1597 | (310)825-3977 "Rule #6: There is no rule #6" -- Monty Python "ARTICLE SIX: THIS ARTICLE IS ABOLISHED" -- Constitution of Afghanistan From BobHendu@aol.com Fri Mar 8 15:38:21 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Fri, 8 Mar 2002 10:38:21 EST Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: <8c.150fe88d.29ba34ed@aol.com> What you are trying to do is difficult. You will need to establish a 1:1 etch rate oxide vs. photoresist. This will require a ratio around 50% CF4 50% O2. Do you have instruments available to measure these films. Probably a Dektac surface scanning system will work. Also I would recommend using a larger substrate as cooling on the electrode becomes important during the etch cycle. Bob From patton@er.com Fri Mar 8 15:47:11 2002 From: patton@er.com (Martin O. Patton) Date: Fri, 08 Mar 2002 10:47:11 -0500 Subject: [mems-talk] Re:mj/cm2 exposure In-Reply-To: Message-ID: <5.1.0.14.0.20020308103826.009fe820@192.156.168.2> Anshu, You can get a rough estimate by putting an optical power meter under your aligners lamp and measuring it's output. Then you know how long to expose. Without a power meter, make an aluminum foil mask with an eight inch wide slit aabout an inch long Put some photoresist on a junk wafer and put the foil over a real mask in the aligner. Expose for one second, move the foil down an eighth of an inch, expose for five seconds, etc. Then see what develops. Marty Martin O. Patton Senior Research Engineer Essential Research Incorporated 6410 Eastland Road Cleveland, Ohio 44142 www.er.com (440) 816-9850 From BobHendu@aol.com Fri Mar 8 15:43:53 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Fri, 8 Mar 2002 10:43:53 EST Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: <144.aba10a5.29ba3639@aol.com> It acts as a diluent and also cools the plasma to some degree protecting your photoresist from reticulating. Bob H From stephan.ertl@gfd-diamond.com Fri Mar 8 15:56:33 2002 From: stephan.ertl@gfd-diamond.com (Ertl, Stephan) Date: Fri, 8 Mar 2002 16:56:33 +0100 Subject: AW: [mems-talk] High temperature - Solution with Diamond MEMS ? Message-ID: <0136AE4B85E5604FA78C08E92119ABD00294FA@gfd-active.gfdulm> Hi ! Hot Stuff ! I really would like to know what you are working on. Your Web-Site does not tell too much ... Rick's idea of the diamond heat sink is nice. Diamond works pretty well up to 6000C in oxygen containing atmosphere, up to 12000C in vacuum or when passivated (for higher temperatures it starts graphitizing). If you go to higher temperatures it will work with some tricks, but soon reach its limits. We developed a technology basis for Diamond MEMS (deposition of highly oriented diamond on 2" Si wafers, surface and bulk micromachining, plasma etching and so on) and already realized several prototypes, including diamond temperature sensors. They can be realized in a wide range of sensitivities. If you think that diamond microstructures could be a solution to your problem please contact us. Hope this helps Stephan Ertl Director R+D GFD Gesellschaft f|r Diamantprodukte mbH 89081 Ulm Germany From vic@gennano.com Fri Mar 8 08:18:31 2002 From: vic@gennano.com (Vic Kley) Date: Fri, 8 Mar 2002 08:18:31 -0000 Subject: [mems-talk] High temperature application References: Message-ID: <063301c1c679$d5fd1500$6400a8c0@pacbell.net> Dear Amanda The impossible can be done! All the elements you wish to monitor can be achieved at that temperature or higher assuming that the rockets exhaust chamber, including the nozzle venturi is kept at a reasonable temperature and the oxidizer does not form a solid at that temperature with carbon. The solution won't be cheap and probably won't last more then one or two test firings. If you are interested contact me off the memsnet. Vic Kley vic@gennano.com ----- Original Message ----- From: Hogedoorn, Armanda To: Sent: Friday, March 08, 2002 3:12 PM Subject: [mems-talk] High temperature application > Hello, > > Thank you for your response so far. It looks like I made everybody curious > about what I want to try to do. So, I shall explain a few things. I > investigate the use of microsensors in rocketpropulsion. I look for > microsensors with are available, and I can use for my applications. An > applications is to test and monitor the igniters. Unfortunately, the > packaging of the sensors I found are not capable for the high temperatures > e.g. in the combustion chamber or around it. Also, the sensors can not > measure the high temperatures. That is why I am looking for packing up to > 3200 degrees Celcius, so that maybe our production department or another > campany can create my perfect sensor for pressure, temperature, stress and > strain measurement. > > Greetings, > > Armanda T. Hogedoorn > hogedoorn@pml.tno.nl > > TNO- Prins Maurits Laboratory > http://www.pml.tno.nl > P.O. Box 45 > 2080 AA RIJSWIJK (ZH) > The Netherlands > > Tel: +31 (0)15 284 3076 > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From sandoval@cts-design.com Fri Mar 8 16:31:58 2002 From: sandoval@cts-design.com (F. Sandoval-Ibarra) Date: Fri, 08 Mar 2002 10:31:58 -0600 Subject: [mems-talk] Wafer Bonding Information? References: <1DD2B880949BD311907B0050040C0A243DE26A@MAGELLAN> Message-ID: <3C88E77E.3E5BDEF4@cts-design.com> My friends About bonding I've some references: [1] J. Haisma .... Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations Japanese Journal of Applied Physics vol. 28, No. 8, pp. 1426-1443, August 1989 [2] R. Stengi ... Bubble-Free-Silicon Wafer Bonding in a Non-Cleanroom Environment Japanese Journal of Applied Physics vol. 27, No. 12, pp. 2364-2366, December 1988 [3] J. G. Fleming .... Low Temperature, High Strength, Wafer-toWafer Bonding J. Electrochem. Soc. vol. 139, No. 11, pp. 3300-3302, November 1992 [4] Masatada Horiuchi ...... Characteristics of Silicon Wafer-Bond Strengthening by Annealing J. Electrochem. Soc. vol. 139, No. 9, pp. 2589-2594, September 1992 [5]Sun Jin Yun .... Studies on Microvoids at the Interface of Direct Bonded Silicon Wafer J. Electrochem. Soc. vol. 139, No. 8, pp. 2326-2330, August 1992 [6] Olof Engstrom .... Electrical Characterization of Bonding Interfaces J. Electrochem. Soc. vol. 139, No. 12, pp. 3638-3644, December 1992 [7] A. D. Brooks .... Low-Temperature Electrostatic Silicon-to-Silicon Seals Using Spittered Borosilicate Glass J. Electrochem. Soc. vol. 119, No. 4, pp. 545-546, April 1972 Good luck F. Sandoval-Ibarra CINVESTAV-Guadalajara Mixico Brubaker Chad wrote: > Dear Frank, > > Wow!! This is a tremendously broad question. An overview of wafer bonding > techniques, along with which materials can be bonded? > > Actually, the second question is easier. Technically, anything can be > bonded to anything (or nearly so). However, as you mentioned, the method is > important. > > First and foremost, your biggest issue with wafer bonding is the Thermal > Coefficient of Expansion (TCE) for each material. Once two differing > materials are bonded together, any change of temperature can cause a stress > gradient, as one of the materials expands more rapidly than the other. > > That said, there are three basic bonding processes: > > 1) Anodic Bonding - this is the use of electricity in combination with > elevated temperatures to perform a bond between an ion bearing glass and an > oxidizable metal. > > 2) Thermocompression Bonding - Bonding using an intermediate layer, along > with a combination of heat and pressure, to create a bond between two > substrates. > > 3) Direct bonding - bonding of two extremely smooth surfaces directly, > without use of intermediate layer or electricity. This will typicaly > require a high temperature anneal after bonding. > > A good overview paper would be A.R. Mirza and A. A. Ayon. "Silicon Wafer > Bonding: Key to MEMS High-Volume Manufacturing", Sensors, Vol. 15, no. 12 > 1998. > > As to manufacturers for bonding equipment, EV Group has been manufacturing > bonding equipment for over ten years, and has extensive experience in the > field. Please visit our web site at www.evgroup.com. > > Best Regards, > > Chad Brubaker > > EV Group-Technology, Tel: (602) 437 9492 x 119, Fax: (602) 437 9435 > E-mail: C.Brubaker@evgroup.com, Web: www.EVGroup.com, 03/07/02 > > -----Original Message----- > From: BERAUER,FRANK (HP-Singapore,ex7) [mailto:frank_berauer@hp.com] > Sent: Thursday, March 07, 2002 2:53 AM > To: 'mems-talk@memsnet.org' > Subject: [mems-talk] Wafer Bonding Information? > > Dear fellow MEMS researchers, > > I would like to get an overview of wafer bonding techniques. > I am especially interested to know which materials can be bonded > together by which bonding techniques and what advantages and dis- > advantages there are. Also, which equipment manufacturers there > are. I would be grateful if somebody can point me to good sources > of information or literature. > > Thanks and have a nice day, > Frank Berauer > Senior R&D Engineer > Hewlett-Packard Singapore > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From nemeth@sophiawireless.com Fri Mar 8 16:47:30 2002 From: nemeth@sophiawireless.com (David Nemeth) Date: Fri, 8 Mar 2002 11:47:30 -0500 Subject: [mems-talk] High temperature - Solution with Diamond MEMS ? In-Reply-To: <0136AE4B85E5604FA78C08E92119ABD00294FA@gfd-active.gfdulm> Message-ID: You might also check out www.diamonex.com for diamond stuff... David Nemeth Senior Process Engineer Sophia Wireless, Inc. 14225-C Sullyfield Circle Chantilly, VA Ph: (703) 961-9573 x206 Fax:(703) 961-9576 -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of Ertl, Stephan Sent: Friday, March 08, 2002 10:57 AM To: mems-talk@memsnet.org Cc: hogedoorn@pml.tno.nl; Rick Williston Subject: AW: [mems-talk] High temperature - Solution with Diamond MEMS ? Hi ! Hot Stuff ! I really would like to know what you are working on. Your Web-Site does not tell too much ... Rick's idea of the diamond heat sink is nice. Diamond works pretty well up to 6000C in oxygen containing atmosphere, up to 12000C in vacuum or when passivated (for higher temperatures it starts graphitizing). If you go to higher temperatures it will work with some tricks, but soon reach its limits. We developed a technology basis for Diamond MEMS (deposition of highly oriented diamond on 2" Si wafers, surface and bulk micromachining, plasma etching and so on) and already realized several prototypes, including diamond temperature sensors. They can be realized in a wide range of sensitivities. If you think that diamond microstructures could be a solution to your problem please contact us. Hope this helps Stephan Ertl Director R+D GFD Gesellschaft f|r Diamantprodukte mbH 89081 Ulm Germany _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From joy_yzhou@yahoo.com Fri Mar 8 16:51:27 2002 From: joy_yzhou@yahoo.com (YI ZHOU) Date: Fri, 8 Mar 2002 08:51:27 -0800 (PST) Subject: [mems-talk] SU-8 exposure and parylene In-Reply-To: Message-ID: <20020308165127.61206.qmail@web9208.mail.yahoo.com> Hi,I can answer your first question about SU-8 exposure.First, you can check the alinger's exposure intensity (in mW/cm2) from its manual. Then, according to the graph of exposure dose vs. thickness which provided by Microchem, you can find the specified exposure dose (in mJ/cm2), finally, expose time=exposure dose/exposure intensity (in seconds). Note,the values of exposure dose are measured on UV350~450nm.If you want to know more about the fabrication of SU-8, I recommend a forum. The web address is http://aveclafaux.freeservers.com/SU%2D8.htmlHope helpful.Yi ZhouMEMS LabDepartment of Mechanical EngineeringUniversity of Maryland, College Park> 10. SU-8 exposure and parylene (anshu mehta)>Message: 10>Date: Thu, 7 Mar 2002 20:00:10 -0800 (PST)>>From: anshu mehta >To: mems-talk@memsnet.org>Subject: [mems-talk] SU-8 exposure and parylene>Reply-To: mems-talk@memsnet.org>>Hi >I am using Su-8 5 as a structural layer for my>device. I looked up Microchem website and they give>the exposure in terms of mJ/cm2. Is it possible to>find a rough estimate for exposure time on a>particular aligner using the mJ/cm2 data? >Also, I wanted to know if it possible to pattern>parylene? >Thanks,>Anshu mehta. Try FREE Yahoo! Mail - the world's greatest free email! From poyntor@yahoo.com Fri Mar 8 17:22:05 2002 From: poyntor@yahoo.com (Sungjun Lee) Date: Sat, 09 Mar 2002 02:22:05 +0900 Subject: [mems-talk] [q]Lift-off of AZ5214 Message-ID: <200203090222050709.06C5B964@csns.snu.ac.kr> Dear all : I try to make an Au electrode pattern on SiO2/high doped-Si using AZ5214.(The structure is very simple.) Before Au(100nm) deposition, I used Ti(40nm) as an adhesion layer in the thermal evaporator. The temperautre(in substrate) during metal process is about 100C for 10 minutes. In process of lift-off by aceton(~80C) and ultrasonic agitation, I failed to remove the background of the electrodes. ("dirty with a thin network patterns" or "never-removed") (In Al case, I removed very easily in my lift-off procedure.) Then, I guess the temperature was so high. is it right? Should I use other metal evaporation method or other lift-off procedure? AZ5214 process was carried "without" hard-baking or cholrobenzene. Please give me any comments to beginner in MEMS. Sungjun From patton@er.com Fri Mar 8 18:31:33 2002 From: patton@er.com (Martin O. Patton) Date: Fri, 08 Mar 2002 13:31:33 -0500 Subject: [mems-talk] Re:mj/cm2 exposure correction In-Reply-To: Message-ID: <5.1.0.14.0.20020308132812.009f29f0@192.156.168.2> Correction to my reply: I left out an h. That's a 1/8 inch slit (not eight inch) about an inch long for the foil mask. Marty From kevinbanks11@hotmail.com Fri Mar 8 18:47:53 2002 From: kevinbanks11@hotmail.com (Kevin Banks) Date: Fri, 08 Mar 2002 18:47:53 +0000 Subject: [mems-talk] SU-8 exposure and parylene Message-ID: Hi, We use OAI aligners and we have an OAI instrument which can be used to measure the output in mW/cm2. It's a fairly simple piece of kit and isn't attatched to the aligner, I don't know whether they sell it as a seperate unit, but I don't see why they wouldn't. Not that's it's really relevant unless you per chance have exactly the same aligner, but our i-line units put out just over 20mW/cm2. Regards, Kevin Banks >From: anshu mehta >Reply-To: mems-talk@memsnet.org >To: mems-talk@memsnet.org >Subject: [mems-talk] SU-8 exposure and parylene >Date: Thu, 7 Mar 2002 20:00:10 -0800 (PST) > >Hi > I am using Su-8 5 as a structural layer for my >device. I looked up Microchem website and they give >the exposure in terms of mJ/cm2. Is it possible to >find a rough estimate for exposure time on a >particular aligner using the mJ/cm2 data? > >Also, I wanted to know if it possible to pattern >parylene? > >Thanks, >Anshu mehta. > > Try FREE Yahoo! Mail - the world's greatest free > > email! > > http://mail.yahoo.com/ >Try FREE Yahoo! Mail - the world's greatest free email! >http://mail.yahoo.com/ >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ _________________________________________________________________ MSN Photos is the easiest way to share and print your photos: http://photos.msn.com/support/worldwide.aspx From vic@gennano.com Fri Mar 8 11:10:21 2002 From: vic@gennano.com (Vic Kley) Date: Fri, 8 Mar 2002 11:10:21 -0000 Subject: [mems-talk] High temperature - Solution with Diamond MEMS ? References: <0136AE4B85E5604FA78C08E92119ABD00294FA@gfd-active.gfdulm> Message-ID: <066c01c1c691$d75b3180$6400a8c0@pacbell.net> Stephan What you are doing sounds very interesting and may be helpful for our work. Do you have a URL? Vic vic@gennano.com From yaopeng@UDel.Edu Fri Mar 8 19:44:04 2002 From: yaopeng@UDel.Edu (Peng Yao) Date: Fri, 8 Mar 2002 14:44:04 -0500 (EST) Subject: [mems-talk] Lift-off of AZ5214 Message-ID: Hi, The result of lift off is determined by the profile of your side wall of PR structures after development. I usually use negative photoresist to get the negtive angel I want. And for that, lift off is very easy. According to the book "fundamentals of microfabrication", it was said if you control the exposure and develop time, you can get both negative and positive side wall, but I never succeeded in the former one. I am also very interested in this topic. If anyone can make a negative side wall using AZ5214? Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 From shankar@sclchd.co.in Sun Mar 10 16:43:15 2002 From: shankar@sclchd.co.in (Ravi Shankar) Date: Sun, 10 Mar 2002 11:43:15 -0500 (Etc/GMT) Subject: [mems-talk] Etch release of SiNx Message-ID: Hi all, i have been using a oxide etchant to release a SiNx structure by etching away a doped oxide, but the lateral etch rate is quite slow. i have not used any agitation for the fear of sagging the microstructure. The SiNx also is getting etched in the mean time(around 30 min). could somebody please suggest something to over come the problem. thanks regds Ravi Shankar Semiconductor Complex Ltd, India From ebuturla@us.ibm.com Sun Mar 10 12:39:02 2002 From: ebuturla@us.ibm.com (Ed Buturla) Date: Sun, 10 Mar 2002 07:39:02 -0500 Subject: [mems-talk] meshing from GDS II Message-ID: I am looking for mesh generation capability to go from layout data(in the form of GDS II data) to a 3D mesh. I am aware of a capability from CFD called CFD-Micromesh. Are their other capabilities? Any public domain codes? Thanks, Ed Ed Buturla EDA Project Manager 802-769-1171, 8-446-1171 ebuturla@us.ibm.com From stephan.ertl@gfd-diamond.com Mon Mar 11 06:41:03 2002 From: stephan.ertl@gfd-diamond.com (Ertl, Stephan) Date: Mon, 11 Mar 2002 07:41:03 +0100 Subject: AW: [mems-talk] High temperature - Solution with Diamond MEMS ? Message-ID: <0136AE4B85E5604FA78C08E92119ABD00A5C7E@gfd-active.gfdulm> Hello ! Sorry, I forgot to add our URL: You can find additional information at www.gfd-diamond.com or www.diamaze.com We are currently building the new version of the Web-Site, it will be available at the end of march. Then you can find detailed information about our Di-MEMS technology. Stephan -----Urspr|ngliche Nachricht----- Von: Vic Kley [mailto:vic@gennano.com] Gesendet: Freitag, 8. Mdrz 2002 12:10 An: mems-talk@memsnet.org Betreff: Re: [mems-talk] High temperature - Solution with Diamond MEMS ? Stephan What you are doing sounds very interesting and may be helpful for our work. Do you have a URL? Vic vic@gennano.com _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From stephan.ertl@gfd-diamond.com Mon Mar 11 06:53:06 2002 From: stephan.ertl@gfd-diamond.com (Ertl, Stephan) Date: Mon, 11 Mar 2002 07:53:06 +0100 Subject: [mems-talk] a-Si Etch Rate in Nitrogen-RIE Message-ID: <0136AE4B85E5604FA78C08E92119ABD00A5C83@gfd-active.gfdulm> Hello everybody ! does anyone know the etch rate of amorphous silicon (deposited by CVD) in Nitrogen plasma (using a PECVD-equipment; no self bias, 700 W @ 2,45 GHz) at 7500C? Does the plasma generate a silicon nitride layer on the surface of the silicon and if so, how is the conversion rate ? Is there a thickness limit I can reach ? Joachim Kusterer GFD mbH Ulm, Germany From W.Bicz@optel.pl Mon Mar 11 08:51:01 2002 From: W.Bicz@optel.pl (Wieslaw Bicz) Date: Mon, 11 Mar 2002 09:51:01 +0100 Subject: [mems-talk] microphone testing References: Message-ID: <3C8C6FF5.693D913@optel.pl> Kyu Tae Yoo wrote: > Hello, > > I am trying to measure the frequency response of a capacitive > micromachined microphone. I am using a super tweeter as a sound > source upto 40KHz, but I am also interested in the frequency response > beyond the audio frequency ( possibly upto 150 KHz). Does anyone know > which transducers are capable of generating low ultrasound (40~150KHz)? > and Who makes them? > Thank you, and have a wonderful day > > There are few manufacturers of ultrasonic transducers working in air. It is relatively easy possible to get transducers working in the frequency range up to 400KHz. But they are narrowband. In America you can for example find Airmar - this corporation is producing transducers working till 300kHz. Wieslaw Bicz ---------------========== OPTEL sp. z o.o. ===========--------------- ------===== R&D: Ultrasonic Technology/Fingerprint Recognition ====------ ul. Otwarta 10a PL 50-212 Wroclaw Tel.:+48 71 3296854 Fax.:+48 71 3296852 --------==== mailto:W.Bicz@optel.pl -=- http://www.optel.pl ====------- From mathieu.burri@unine.ch Mon Mar 11 11:16:39 2002 From: mathieu.burri@unine.ch (BURRI Mathieu) Date: Mon, 11 Mar 2002 12:16:39 +0100 Subject: [mems-talk] DRIE of quartz Message-ID: <013FC8E4D556724D86422FFAAAA0928B43878B@mail02.UNINE.CH> Dear MEMS society, I want to make holes (diameter 3-5 um, depth 40-50 um) in a QUARTZ substrate by DRIE etching. Which mask materials, photoresist,... should be used? Any comments and/or etch recipes are welcome. Thanks Regards From h.j.vanderlinden@el.utwente.nl Mon Mar 11 13:41:47 2002 From: h.j.vanderlinden@el.utwente.nl (Heiko van der Linden) Date: Mon, 11 Mar 2002 14:41:47 +0100 Subject: [mems-talk] DRIE of quartz In-Reply-To: <013FC8E4D556724D86422FFAAAA0928B43878B@mail02.UNINE.CH> Message-ID: <002b01c1c902$7dc0a7e0$d3125982@bio126> Hi Mathieu, There's an article in Vacuum called "reactive ion etching of quartz and silica-based glasses in CF4/CHF3 plasmas" by Patrick W. Leech. Vacuum 55 (1999) pp. 191-196 (No info about mask material though as far as I can see.) and not about quartz but maybe informative: Deep reactive ion etching of Pyrex glass using SF6 plasma, Sensors and Actuators A: Physical, Volume 87, Issue 3, 5 January 2001, Pages 139-145 Kind regards, Heiko van der Linden ******************************* MESA+ Research Institute Twente University P.O. Box 217 7500 AE Enschede The Netherlands ******************************* -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org] On Behalf Of BURRI Mathieu Sent: Monday, March 11, 2002 12:17 PM To: mems-talk@memsnet.org Subject: [mems-talk] DRIE of quartz Dear MEMS society, I want to make holes (diameter 3-5 um, depth 40-50 um) in a QUARTZ substrate by DRIE etching. Which mask materials, photoresist,... should be used? Any comments and/or etch recipes are welcome. Thanks Regards _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From jia@me.umn.edu Mon Mar 11 13:44:36 2002 From: jia@me.umn.edu (Jia Zhou) Date: Mon, 11 Mar 2002 07:44:36 -0600 (CST) Subject: [mems-talk] Thermal expansion coefficient of oxide film Message-ID: <1015854276.3c8cb4c4544dd@mail.me.umn.edu> Wher can I find the thermal expansion coefficient of silicon oxide film. Thanks. From rogerbr@earthlink.net Mon Mar 11 14:20:50 2002 From: rogerbr@earthlink.net (Roger Brennan) Date: Mon, 11 Mar 2002 06:20:50 -0800 Subject: [mems-talk] Wafer Drying Message-ID: <01C1C8C4.E4B6E060.rogerbr@earthlink.net> Hi Everybody: I have an "Iso-dryer" (a vapor "de-greaser" using isopropyl alcohol) ready to be replaced. It has been suggested that I replace it with a Marangoni drier. As I understand this system, a layer "atomized" mist of very small liquid droplets of isopropyl hovers over the top of DI wafer. As the wafers move from the DI water to the iso, the wafers are supposed to be dried. So far, I have talked to the vendor, Avid Technology, Mountain View, CA, www.Itechcorp.com Sounds like magic! Is anyone out there using such a system and are you happy with it? Thanks, Roger Brennan Home: 1403 Forrestal Avenue San Jose, CA 95110 (408)453-0711 (telephone) (408)573-9407 (fax) rogerbr@earthlink.net Work: Endevco 355 N. Pastoria Ave. Sunnyvale, CA 94085 408-739-3533 ext 204 roger.brennan@endevco.com From rogerbr@earthlink.net Mon Mar 11 14:28:42 2002 From: rogerbr@earthlink.net (Roger Brennan) Date: Mon, 11 Mar 2002 06:28:42 -0800 Subject: [mems-talk] Rebuilding a Reactive Ion Etcher (RIE). Message-ID: <01C1C8C5.FD9B2400.rogerbr@earthlink.net> Hi, I'm looking for somebody to overhaul an ancient model 1000MP?, The Semi Group, Reactive Ion Etcher (RIE). Any feed back will be appreciated. Roger Brennan Home: 1403 Forrestal Avenue San Jose, CA 95110 (408)453-0711 (telephone) (408)573-9407 (fax) rogerbr@earthlink.net Work: Endevco 355 N. Pastoria Ave. Sunnyvale, CA 94085 408-739-3533 ext 204 roger.brennan@endevco.com From BMoffat@yieldengineering.com Mon Mar 11 16:09:36 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Mon, 11 Mar 2002 08:09:36 -0800 Subject: [mems-talk] Lift-off of AZ5214 Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC01D98A@exchange.yield.yield engineering.com> Peng, One way to get a negative angle is to use an image reversal technique. My company manufacture a reversal unit which uses ammonia. In principle you do the first exposure which determines the C.D. then place in ammonia at 90 degrees centigrade for 45 minutes. The ammonia neutralizes the acid in the exposed areas. Then flood expose which determines the angle of overhang. I have numerous technical papers on the subject as there are hundreds of units in operation. Typical C.D. would be 0.1 micron. typical overhang up to 22 degrees reverse angle. Once the C.D. is established with the first exposure the flood exposure controls the angle of the resist can be controlled from 22 degrees either side of vertical. People looking for extreme resolution use vertical side walls. Bill Moffat -----Original Message----- From: Peng Yao [mailto:yaopeng@UDel.Edu] Sent: Friday, March 08, 2002 11:44 AM To: mems-talk@memsnet.org Subject: [mems-talk] Lift-off of AZ5214 Hi, The result of lift off is determined by the profile of your side wall of PR structures after development. I usually use negative photoresist to get the negtive angel I want. And for that, lift off is very easy. According to the book "fundamentals of microfabrication", it was said if you control the exposure and develop time, you can get both negative and positive side wall, but I never succeeded in the former one. I am also very interested in this topic. If anyone can make a negative side wall using AZ5214? Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From BMoffat@yieldengineering.com Mon Mar 11 16:51:21 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Mon, 11 Mar 2002 08:51:21 -0800 Subject: [mems-talk] Wafer Drying Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC12CDDD@exchange.yield.yield engineering.com> Roger, I saw a copy of that IsoDryer at a trade show about 5 years ago. It was being displayed by Dale Ann Springer who worked for A.I.O. at the time. I have a buddy who works for A.I.O. at this time, Suzanne Scullen. I will try to reach Suzanne to see what she knows about this type of dryer and try to find Dale Ann to see what she knows. When I have collected data I will be back at you. I may have to call you to relay all of the details. Bill Moffat. -----Original Message----- From: Roger Brennan [mailto:rogerbr@earthlink.net] Sent: Monday, March 11, 2002 6:21 AM To: mems-talk@memsnet.org Subject: [mems-talk] Wafer Drying Hi Everybody: I have an "Iso-dryer" (a vapor "de-greaser" using isopropyl alcohol) ready to be replaced. It has been suggested that I replace it with a Marangoni drier. As I understand this system, a layer "atomized" mist of very small liquid droplets of isopropyl hovers over the top of DI wafer. As the wafers move from the DI water to the iso, the wafers are supposed to be dried. So far, I have talked to the vendor, Avid Technology, Mountain View, CA, www.Itechcorp.com Sounds like magic! Is anyone out there using such a system and are you happy with it? Thanks, Roger Brennan Home: 1403 Forrestal Avenue San Jose, CA 95110 (408)453-0711 (telephone) (408)573-9407 (fax) rogerbr@earthlink.net Work: Endevco 355 N. Pastoria Ave. Sunnyvale, CA 94085 408-739-3533 ext 204 roger.brennan@endevco.com _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From BobHendu@aol.com Mon Mar 11 16:53:48 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Mon, 11 Mar 2002 11:53:48 EST Subject: [mems-talk] Wafer Drying Message-ID: White magic I would think. There are a couple of companies that offer similar systems. I thought Mattson offered both Marigoni and CFM vapor dry which are similar. Cost might be an issue with these systems and an old iso dryer with coils seems to work just fine last time I checked. Bob Henderson From BobHendu@aol.com Mon Mar 11 16:55:06 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Mon, 11 Mar 2002 11:55:06 EST Subject: [mems-talk] Rebuilding a Reactive Ion Etcher (RIE). Message-ID: Roger: Can you send digital photos of what you have and what you want and I can provide you with a quote. Bob Henderson Process Integration,LLC From mwest@imtecacculine.com Mon Mar 11 18:44:40 2002 From: mwest@imtecacculine.com (Mark West) Date: Mon, 11 Mar 2002 10:44:40 -0800 Subject: [mems-talk] Wafer Drying In-Reply-To: <240593772F9E5C4BB5BECE5FF0B937EC12CDDD@exchange.yield.yiel d engineering.com> Message-ID: For the benefit of those interested in IPA drying, I might be able to assist in understanding what types are available. IPA drying has been around for many years. The orginal designs used a chamber or sump of boiling IPA to create a vapor zone that the wafers would be lowered into. The IPA vapor displaces the water on the surface even in trenches or topography. Afterward the wafers are raised into an area with cooling coils and allowed to cool until they are dry. Several companies made these and they are probably still available. The IsoDry (model name) was a product of this type made by Verteq, who acquired the product from a startup called Applied Cleaning Technologies or ACT. The early technology used large amounts of IPA which was costly and required special abatement equipment. Current IPA drying is based on the Marangoni principal. These dryers have a rinse tank where a small amount of IPA is added to the surface of the water. The tank is then drained slowly and the IPA displaces the water as the tank drains. This is usually followed by a final dry using high volumes of N2. CFM, who was purchased by Mattson, patented a dryer using the marangoni technique and they have sued several other companies for infringement. Mattson also purchased Steag who was one of the companies that had been succesfully sued by CFM. Mattson still uses the CFM marangoni dry as part of their wet process stations, but I don't think they sell it as a stand-alone dryer. The product sold by AIO was called the Sonic Fog, it was similar to the CFM dryer but generated IPA vapor using an ultrasonic to atomize the liquid. This product has since been refined and is now sold by a company called L-Tech. http://ltechcorp.com It's called the Avid Dryer. Yield-up was another company which made a Marangoni type dryer that survived a CFM suit. This company was bought by FSI International and I believe they are selling these as stand alone tools. There is also a single wafer IPA drying technology called Rotagoni, which was developed by IMEC. It uses a spin chuck with a means for depositing the IPA similar to how it's done in a Photoresist track. IMEC licenses technology and I don't know if there is anyone offering this as a tool yet, but there probably will be at some point. That just about covers all the bases. Hope you found it interesting. m -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of Bill Moffat Sent: Monday, March 11, 2002 8:51 AM To: mems-talk@memsnet.org Subject: RE: [mems-talk] Wafer Drying Roger, I saw a copy of that IsoDryer at a trade show about 5 years ago. It was being displayed by Dale Ann Springer who worked for A.I.O. at the time. I have a buddy who works for A.I.O. at this time, Suzanne Scullen. I will try to reach Suzanne to see what she knows about this type of dryer and try to find Dale Ann to see what she knows. When I have collected data I will be back at you. I may have to call you to relay all of the details. Bill Moffat. -----Original Message----- From: Roger Brennan [mailto:rogerbr@earthlink.net] Sent: Monday, March 11, 2002 6:21 AM To: mems-talk@memsnet.org Subject: [mems-talk] Wafer Drying Hi Everybody: I have an "Iso-dryer" (a vapor "de-greaser" using isopropyl alcohol) ready to be replaced. It has been suggested that I replace it with a Marangoni drier. As I understand this system, a layer "atomized" mist of very small liquid droplets of isopropyl hovers over the top of DI wafer. As the wafers move from the DI water to the iso, the wafers are supposed to be dried. So far, I have talked to the vendor, Avid Technology, Mountain View, CA, www.Itechcorp.com Sounds like magic! Is anyone out there using such a system and are you happy with it? Thanks, Roger Brennan Home: 1403 Forrestal Avenue San Jose, CA 95110 (408)453-0711 (telephone) (408)573-9407 (fax) rogerbr@earthlink.net Work: Endevco 355 N. Pastoria Ave. Sunnyvale, CA 94085 408-739-3533 ext 204 roger.brennan@endevco.com _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From michael.martin@louisville.edu Mon Mar 11 19:11:02 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Mon, 11 Mar 2002 14:11:02 -0500 Subject: [mems-talk] meshing from GDS II Message-ID: MEM CAD from conventor will do this, but its not exactly public domain. -Mike >>> ebuturla@us.ibm.com 03/10/02 04:39AM >>> I am looking for mesh generation capability to go from layout data(in the form of GDS II data) to a 3D mesh. I am aware of a capability from CFD called CFD-Micromesh. Are their other capabilities? Any public domain codes? Thanks, Ed Ed Buturla EDA Project Manager 802-769-1171, 8-446-1171 ebuturla@us.ibm.com _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From sjoh@physics.unc.edu Mon Mar 11 19:16:01 2002 From: sjoh@physics.unc.edu (SOOJIN OH) Date: Mon, 11 Mar 2002 14:16:01 -0500 (EST) Subject: [mems-talk] [Q]surface cleaning Message-ID: Hi, I need some surface cleaning equipment to clean the surface of regular cover glass without damaging it. I wanted to buy "UV-CLEAN" manufactured by Boekel industries, Inc, but found out they stopped making that model. Would anydoby please suggest any other manufacturers of similar products? Or some better ways to clean glass? My purpose is to increase wettability by removing organic contaminants, and my samples are very fragile. Thank you very much for your kind answer. ------------------------------------------------------------------------------- Soojin Oh Graduate student in Otto Zhou's group Rm 163 Phillips Hall (phone)919-962-3525 (fax) 919-962-0480 ------------------------------------------------------------------------------- From joy_yzhou@yahoo.com Mon Mar 11 19:30:03 2002 From: joy_yzhou@yahoo.com (YI ZHOU) Date: Mon, 11 Mar 2002 11:30:03 -0800 (PST) Subject: [mems-talk] Re: Thermal expansion coefficient of oxide film (Jia Zhou) In-Reply-To: Message-ID: <20020311193003.33902.qmail@web9207.mail.yahoo.com> The thermal expansion coefficient of Silicon dioxide is about 0.4X10^ -6 (in /k). Yi Zhou MEMS Lab Department of Mechanical Engineering University of Maryland, College Park Try FREE Yahoo! Mail - the world's greatest free email! http://mail.yahoo.com/ From craig@cs.dartmouth.edu Mon Mar 11 19:48:43 2002 From: craig@cs.dartmouth.edu (Craig McGray) Date: Mon, 11 Mar 2002 14:48:43 -0500 Subject: [mems-talk] Re: Thermal expansion coefficient of oxide film References: Message-ID: <3C8D0A1B.E75AAD03@cs.dartmouth.edu> Hello Jia Zhou, One of many places to find the thermal expansion coefficient of silicon dioxide is as follows: Milton Ohring "The Materials Science of Thin Films" Academic Press, San Diego California 1992 The value provided in this text is 0.55 ppm/K. Please keep in mind that this value will vary depending on how the oxide was produced. Best Wishes, Craig McGray Dartmouth College mems-talk-request@memsnet.org wrote: > Message: 9 > From: Jia Zhou > To: mems-talk@memsnet.org > Date: Mon, 11 Mar 2002 07:44:36 -0600 (CST) > Subject: [mems-talk] Thermal expansion coefficient of oxide film > Reply-To: mems-talk@memsnet.org > > Wher can I find the thermal expansion coefficient of silicon oxide film. Thanks. From michael.martin@louisville.edu Mon Mar 11 19:49:23 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Mon, 11 Mar 2002 14:49:23 -0500 Subject: [mems-talk] Rebuilding a Reactive Ion Etcher (RIE). Message-ID: Strangely enough I've been working on reviving a Semi Group 1000TP and have only recently gotten it running. While I'm no expert, I'd be happy to help in any way I can. Michael Martin Microfabrication Scientist U of Louisville (502)852-1572 >>> rogerbr@earthlink.net 03/11/02 06:28AM >>> Hi, I'm looking for somebody to overhaul an ancient model 1000MP?, The Semi Group, Reactive Ion Etcher (RIE). Any feed back will be appreciated. Roger Brennan Home: 1403 Forrestal Avenue San Jose, CA 95110 (408)453-0711 (telephone) (408)573-9407 (fax) rogerbr@earthlink.net Work: Endevco 355 N. Pastoria Ave. Sunnyvale, CA 94085 408-739-3533 ext 204 roger.brennan@endevco.com _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From xzhu@ECECS.UC.EDU Mon Mar 11 21:08:47 2002 From: xzhu@ECECS.UC.EDU (Zhu, Xiaoshan) Date: Mon, 11 Mar 2002 16:08:47 -0500 Subject: [mems-talk] The thin plastic wafers(thickness<200um) is needed!! Message-ID: <001f01c1c940$f0078880$3d053f0a@rhod.uc.edu> Hi, there, Do you know which company sell some thin plastic wafers(thickness<200um)? Thank you so much! ZHU, Xiaoshan From rarya@ece.ucdavis.edu Tue Mar 12 01:36:24 2002 From: rarya@ece.ucdavis.edu (Ranju Arya) Date: Mon, 11 Mar 2002 17:36:24 -0800 (PST) Subject: [mems-talk] Oxidation question Message-ID: Hi... Do any of you have information on the residual stress of oxidation on silicon? Thanks! Ranju From MFAChollet@ntu.edu.sg Tue Mar 12 02:01:23 2002 From: MFAChollet@ntu.edu.sg (Franck Alexis Chollet (Asst Prof)) Date: Tue, 12 Mar 2002 10:01:23 +0800 Subject: [mems-talk] meshing from GDS II Message-ID: <9C9309FA33DB90499DE4B818889DF6F7162A66@exchange01.staff.mai n.ntu.edu.sg> Intellisuite and CoventorWare (aka MEMCAD) will do the trick... but they are not exactly what can be called freeware (especially the second one - although they both have 'academic' prices)! They work both very similarly (same father apparently, but I don't know the mother :-): it is 'just' a layout importer (the masks in GDSII) that gives the plane pattern, with a process description that gives the thickness of the layers. They still need a proper manual editing, at least to check that everything went well (node connection, inside-outside...). Of course it works for 2.5D only (not real 3D, only extruded 2D), but I believe it is what you're talking about (actually, Coventor has limited 'sloped' etch simulation possibilities, allowing to have sidewall with a fixed angle - more or less 2.6D :-). Franck "-----Original Message----- "From: Ed Buturla [mailto:ebuturla@us.ibm.com] "Sent: Sunday, 10 March, 2002 20:39 "To: mems-talk@memsnet.org "Subject: [mems-talk] meshing from GDS II " " "I am looking for mesh generation capability to go from layout "data(in the "form of GDS II data) to a 3D mesh. I am aware of a capability from CFD "called CFD-Micromesh. Are their other capabilities? Any public domain "codes? "Thanks, "Ed " "Ed Buturla "EDA Project Manager " "802-769-1171, 8-446-1171 "ebuturla@us.ibm.com "_______________________________________________ "mems-talk@memsnet.org mailing list: to unsubscribe or change your list "options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk "Hosted by the MEMS Exchange, providers of MEMS processing services. "Visit us at http://www.mems-exchange.org/ " From EGLiu@ntu.edu.sg Tue Mar 12 03:52:42 2002 From: EGLiu@ntu.edu.sg (Liu Gang) Date: Tue, 12 Mar 2002 11:52:42 +0800 Subject: [mems-talk] Etch release of SiNx Message-ID: <5D138E82835F8143AC52E4899FAEFE381200CD@EXCHANGE03.staff.mai n.ntu.edu.sg> what is your enchant and how slow. -----Original Message----- From: Ravi Shankar [mailto:shankar@sclchd.co.in] Sent: Monday, March 11, 2002 12:43 AM To: mems-talk@memsnet.org Subject: [mems-talk] Etch release of SiNx Hi all, i have been using a oxide etchant to release a SiNx structure by etching away a doped oxide, but the lateral etch rate is quite slow. i have not used any agitation for the fear of sagging the microstructure. The SiNx also is getting etched in the mean time(around 30 min). could somebody please suggest something to over come the problem. thanks regds Ravi Shankar Semiconductor Complex Ltd, India _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From aloni@taz.qinetiq.com Tue Mar 12 09:24:34 2002 From: aloni@taz.qinetiq.com (Dr A Loni) Date: Tue, 12 Mar 2002 09:24:34 -0000 Subject: [mems-talk] WayCoat SC180 Photoresist Message-ID: Is this a Shipley product and is it still available? Please e-mail me aloni@qinetiq.com Regards. Dr A Loni. ------------------------------------------------------- Dr A Loni, MInstP, CPhys, CEng QinetiQ, Malvern Technology Park, St Andrews Road, Malvern, Worcestershire, WR14 3PS, UK. Tel: +44 (0) 1684 894259 (direct) E-mail: aloni@QinetiQ.com From jdzahn@yahoo.com Tue Mar 12 13:21:24 2002 From: jdzahn@yahoo.com (Jeff Zahn) Date: Tue, 12 Mar 2002 05:21:24 -0800 (PST) Subject: [mems-talk] The thin plastic wafers(thickness<200um) is needed!! In-Reply-To: <001f01c1c940$f0078880$3d053f0a@rhod.uc.edu> Message-ID: <20020312132124.54815.qmail@web11703.mail.yahoo.com> Try Goodfellow (www.goodfellow.com). I got PMMA sheets of varying thickness from them (500, 125 and 50 um thick.) The sheets are rather larger and you have to cut the plastic to wafer size, but it has worked well for me. They probably have different plastics as well... Jeff --- "Zhu, Xiaoshan" wrote: > Hi, there, > > Do you know which company sell some thin plastic > wafers(thickness<200um)? > > Thank you so much! > > ZHU, Xiaoshan > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe > or change your list > options, visit > http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS > processing services. > Visit us at http://www.mems-exchange.org/ Try FREE Yahoo! Mail - the world's greatest free email! http://mail.yahoo.com/ From michael.martin@louisville.edu Tue Mar 12 15:11:42 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Tue, 12 Mar 2002 10:11:42 -0500 Subject: [mems-talk] The thin plastic wafers(thickness<200um) is needed!! Message-ID: You can get polyimide films from 175 microns to 12.5 from Dupont. >>> xzhu@ECECS.UC.EDU 03/11/02 01:08PM >>> Hi, there, Do you know which company sell some thin plastic wafers(thickness<200um)? Thank you so much! ZHU, Xiaoshan _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From lshelley@micrometrics.com Tue Mar 12 15:13:06 2002 From: lshelley@micrometrics.com (Liz Shelley) Date: Tue, 12 Mar 2002 10:13:06 -0500 Subject: [mems-talk] WayCoat SC180 Photoresist In-Reply-To: Message-ID: This is an ARCH Chemical supplied negative acting photoresist. ARCH inherited it from acquisitions for which WAYCOAT was part of. Their website is terrible for such a big Co. You can get on their website and e-mail them to get in touch with the appropriate contact. They supply a whole line of these products. Liz > From: "Dr A Loni" > Organization: DRA > Reply-To: mems-talk@memsnet.org > Date: Tue, 12 Mar 2002 09:24:34 -0000 > To: mems-talk@mems-exchange.org > Subject: [mems-talk] WayCoat SC180 Photoresist > > Is this a Shipley product and is it still available? > > Please e-mail me aloni@qinetiq.com > > Regards. > > Dr A Loni. > ------------------------------------------------------- > Dr A Loni, MInstP, CPhys, CEng > QinetiQ, Malvern Technology Park, St Andrews Road, Malvern, Worcestershire, > WR14 3PS, UK. > > Tel: +44 (0) 1684 894259 (direct) > E-mail: aloni@QinetiQ.com > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From BMoffat@yieldengineering.com Tue Mar 12 16:12:28 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Tue, 12 Mar 2002 08:12:28 -0800 Subject: [mems-talk] [Q]surface cleaning Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC12CDDF@exchange.yield.yield engineering.com> Hi, One solution could be a simple capacitive plasma generator. With this sort of equipment you have a R/D tool that can plasma treat with a variety of gasses. With 02 you get a better clean than U.V. ozone generated cleaning, and the option to add different gasses for R/D exists. For example with CF4 or SF6 you can etch Silicon in all its forms. With a H2 containing gas you can reduce oxides and clean copper, silver and aluminum. How fragile are your samples. My company manufactures a capacitive plasma system which I can supply details off and I can get samples run. A capacitive plasma system creates the plasma between the plates of a capacitor and as such gives great uniformity in a plane parallel to the electrodes. Bill Moffat -----Original Message----- From: SOOJIN OH [mailto:sjoh@physics.unc.edu] Sent: Monday, March 11, 2002 11:16 AM To: mems-talk@memsnet.org Subject: [mems-talk] [Q]surface cleaning Hi, I need some surface cleaning equipment to clean the surface of regular cover glass without damaging it. I wanted to buy "UV-CLEAN" manufactured by Boekel industries, Inc, but found out they stopped making that model. Would anydoby please suggest any other manufacturers of similar products? Or some better ways to clean glass? My purpose is to increase wettability by removing organic contaminants, and my samples are very fragile. Thank you very much for your kind answer. ----------------------------------------------------------------------------- -- Soojin Oh Graduate student in Otto Zhou's group Rm 163 Phillips Hall (phone)919-962-3525 (fax) 919-962-0480 ----------------------------------------------------------------------------- -- _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From popurirajsekhar@hotmail.com Tue Mar 12 16:18:03 2002 From: popurirajsekhar@hotmail.com (Rajsekhar Popuri) Date: Tue, 12 Mar 2002 11:18:03 -0500 Subject: [mems-talk] chrome gold electrodes on a PZT layer Message-ID: Hi, I am trying to deposit chrome-gold electrodes on a thin PZT layer. Do anyone have an idea whether chrome will diffuse into the PZT layer.Can i strip off the chrome-gold elctrodes using thier respective etchants without having any effect on the PZT layer. Any information is appreciated. Thanks Raj. _________________________________________________________________ Chat with friends online, try MSN Messenger: http://messenger.msn.com From ashfaq@fh-furtwangen.de Tue Mar 12 17:01:07 2002 From: ashfaq@fh-furtwangen.de (Fahad Lodhi) Date: Tue, 12 Mar 2002 18:01:07 +0100 Subject: [mems-talk] info about software Message-ID: <000e01c1c9e7$80e98320$2dda1c8d@projiaf.fhfurtwangen.de> Hello All, does any body have an idea how can i display the graphics on windows pc while making a telnet remote login to the Unix Network or solaris ntwork. i can connect to the solaris network and can run the simulation software on my PC but the graphic are not displyed on my windows PC. ANY IDEA? thanx in advance Farhad ashfaq@fh-furtwangen.de From BLi@uamail.albany.edu Tue Mar 12 17:51:20 2002 From: BLi@uamail.albany.edu (Biao Li) Date: Tue, 12 Mar 2002 12:51:20 -0500 Subject: [mems-talk] Lift-off of AZ5214 Message-ID: <88A532A156EAD411A6EC00D0B7471BC30405076B@email.albany.edu> Hi, Bill, I got the reversal image using AZ5214 with a different way: coating, prebaking, exposure, baking, flood exposure, and develop. No ammonia is used in my case. And I always illuminate the phororesist for 60sec or more during the flood exposure. Do you have any data or literature about the effect of flood exposure on the angle of overhang? In my opinion, this angle is determined mainly by the exposure and develop time. Thanks a lot. Biao Li Albany nanoTech -----Original Message----- From: Bill Moffat [mailto:BMoffat@yieldengineering.com] Sent: Monday, March 11, 2002 11:10 AM To: mems-talk@memsnet.org Subject: RE: [mems-talk] Lift-off of AZ5214 Peng, One way to get a negative angle is to use an image reversal technique. My company manufacture a reversal unit which uses ammonia. In principle you do the first exposure which determines the C.D. then place in ammonia at 90 degrees centigrade for 45 minutes. The ammonia neutralizes the acid in the exposed areas. Then flood expose which determines the angle of overhang. I have numerous technical papers on the subject as there are hundreds of units in operation. Typical C.D. would be 0.1 micron. typical overhang up to 22 degrees reverse angle. Once the C.D. is established with the first exposure the flood exposure controls the angle of the resist can be controlled from 22 degrees either side of vertical. People looking for extreme resolution use vertical side walls. Bill Moffat -----Original Message----- From: Peng Yao [mailto:yaopeng@UDel.Edu] Sent: Friday, March 08, 2002 11:44 AM To: mems-talk@memsnet.org Subject: [mems-talk] Lift-off of AZ5214 Hi, The result of lift off is determined by the profile of your side wall of PR structures after development. I usually use negative photoresist to get the negtive angel I want. And for that, lift off is very easy. According to the book "fundamentals of microfabrication", it was said if you control the exposure and develop time, you can get both negative and positive side wall, but I never succeeded in the former one. I am also very interested in this topic. If anyone can make a negative side wall using AZ5214? Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From akuchlin@mems-exchange.org Tue Mar 12 18:12:03 2002 From: akuchlin@mems-exchange.org (Andrew Kuchling) Date: Tue, 12 Mar 2002 13:12:03 -0500 Subject: [mems-talk] info about software In-Reply-To: <000e01c1c9e7$80e98320$2dda1c8d@projiaf.fhfurtwangen.de> References: <000e01c1c9e7$80e98320$2dda1c8d@projiaf.fhfurtwangen.de> Message-ID: <20020312181203.GA24023@ute.mems-exchange.org> On Tue, Mar 12, 2002 at 06:01:07PM +0100, Fahad Lodhi wrote: >does any body have an idea how can i display the graphics >on windows pc while making a telnet remote login to the Unix Network or >solaris ntwork. You'll have to find an X Window System server for your Windows machine. There are several available; I remember MicroImage and Hummingbird as two vendors, but a Google search will doubtless be more useful than my vague recollection. It's also worth looking at VNC, a free software program that allows exporting the entire desktop (either the X or Windows desktop) to another machine. Its home page is at http://www.uk.research.att.com/vnc/ . -- A.M. Kuchling akuchlin@mems-exchange.org Technical Staff, MEMS Exchange Tel.: (703) 262-5368 x5374 From joycewon@spock.usc.edu Tue Mar 12 18:39:50 2002 From: joycewon@spock.usc.edu (Joyce Wong) Date: Tue, 12 Mar 2002 11:39:50 -0700 Subject: [mems-talk] info about software In-Reply-To: <000e01c1c9e7$80e98320$2dda1c8d@projiaf.fhfurtwangen.de> Message-ID: <5.1.0.14.2.20020312113807.00ab0ec0@149.169.34.79> Use Hummingbird's Exceed. >i can connect to the solaris network and can run the simulation software on my >PC but the graphic are not displyed on my windows PC. >ANY IDEA? > >thanx in advance >Farhad >ashfaq@fh-furtwangen.de From stark@ninesigma.com Tue Mar 12 22:15:53 2002 From: stark@ninesigma.com (Kevin C. Stark) Date: Tue, 12 Mar 2002 17:15:53 -0500 Subject: [mems-talk] Request for quotation for nitride and TiN or TiAlN films on 4" Si (100) wafers Message-ID: <2BD069D339D74D4D91F994E0CC005759157D2C@ninesigmasrv2.ninesi gma.com> I represent a client that is looking to get two thin films deposited on 10-20 wafers. The Si (100) wafers are 4" (100mm) in diameter, and the desired films are as follows: 1. 2000 A LPCVD Si3N4. 2. 1000-2000 A TiN or TiAlN (TiAlN preferred). In addition, the following film properties are desired for the TiN/TiAlN: 1. Specific resistivity of 30~50 micro-ohm.cm, and the sheet resistance of the layer is about 3ohm/square at the layer thickness of 1000~2000A. 2. The thermal coefficient of resistivity should be as low as possible - at least lower than about 700 (or 800 ) ppm/degC. 3. The thermal coefficient of expansion should be as low as possible - at least lower than about 10 ppm/degC. My client would like to identify a potential source and send the wafers within 2-3 weeks. Please get back to me with a quote and turn around time, and feel free to contact me with any questions. If you do not provide this service, but have recommendations on who could, that would be very helpful. Thanks, Kevin Kevin C. Stark, Ph.D. Senior Program Manager NineSigma, Inc. 21945 Chagrin Blvd. Cleveland, OH 44122 216-295-4806 216-295-4825 (fax) stark@ninesigma.com www.ninesigma.com From hychan@acae.cuhk.edu.hk Wed Mar 13 06:44:29 2002 From: hychan@acae.cuhk.edu.hk (Chan Ho Yin) Date: Wed, 13 Mar 2002 14:44:29 +0800 (CST) Subject: [mems-talk] Problem in etching Al and Pt In-Reply-To: <001f01c1c6a9$dd6c00a0$5e6c728c@ess.nthu.edu.tw> Message-ID: Hi, If I use AZ400K to etch Al, what is the mask I should use? I try to use AZ5214 PR. But not very good...Some of the pattern is etched. Thank you Hoyin On Fri, 8 Mar 2002, Yun-Ju Chuang wrote: > Hi, > > Besides AZ MIF327, you may try AZ 400K developer. > I think you could try this Al etchant H3PO4:HNO3:CH3COOH:DI=16:1:1:2 . > We used this etchant to pattern Al as interconnecton line on Pt resistor. > > Yun-Ju Chuang > > ----- Original Message ----- > From: "Greg Miller" > To: > Sent: Thursday, March 07, 2002 6:23 AM > Subject: RE: [mems-talk] Problem in etching Al and Pt > > > > You might want to try AZ MIF 327 Photoresist developer - you might stand > > a better chance of etching your Al film - its very slow but works quite > > well. > > > > Greg Miller > > KVH > > > > -----Original Message----- > > From: Hoyin [mailto:hychan@acae.cuhk.edu.hk] > > Sent: Monday, March 04, 2002 9:38 AM > > To: mems-talk@memsnet.org > > Subject: [mems-talk] Problem in etching Al and Pt > > > > > > Hi all, > > > > I have got a simple question. I want to sacrifically release my = > > device by etching Al. However, one of the layer is Pt. Will the Al = > > etchant etch Pt ??? What etchant do you suggest?? > > > > Thank you very much!!! > > > > Hoyin > > _______________________________________________ > > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > > Hosted by the MEMS Exchange, providers of MEMS processing services. > > Visit us at http://www.mems-exchange.org/ > > _______________________________________________ > > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > > Hosted by the MEMS Exchange, providers of MEMS processing services. > > Visit us at http://www.mems-exchange.org/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From koblitz@microfab.de Wed Mar 13 10:05:13 2002 From: koblitz@microfab.de (=?iso-8859-1?Q?J=F6rn_Koblitz?=) Date: Wed, 13 Mar 2002 11:05:13 +0100 Subject: [mems-talk] Adhesion layer for Pt films (high temp application) Message-ID: Dear MEMS-talk members, I am looking for a suitable adhesion layer between an LPCVD SiN substrate layer and a 0.5 micron thick platinum layer (used as bond pads) that is stable up to 600 deg. C. Ideally, we would use the Pt without any adhesion layer, but I fear that long-term stability/reliability could be an issue then. We apply sputtering of the Pt and do have tantalum, titanium, TiN and Cr targets in use with our sputtering machine. Can anyone propose a suitable solution or even process? Many thanks in advance. Joern Koblitz microFAB Bremen GmbH From emer.oreilly@nmrc.ie Wed Mar 13 10:53:33 2002 From: emer.oreilly@nmrc.ie (Emer O'Reilly) Date: Wed, 13 Mar 2002 10:53:33 -0000 Subject: [mems-talk] The thin plastic wafers(thickness<200um) is needed!! Message-ID: Hi, Try also Roehm - contact: juergen_maiberger@roehm.com Emer. **************************************************************************** *** Research Engineer, Nanotechnology Group, NMRC, University College Cork, Ireland. Direct line: +353 (0)21 4904182 Fax: +353 (0)21 4270271 www.nmrc.ie **************************************************************************** *** [demime 0.98e removed an attachment of type application/ms-tnef which had a name of winmail.dat] From hoyincym@hotmail.com Wed Mar 13 15:28:29 2002 From: hoyincym@hotmail.com (Chan Ho Yin) Date: Wed, 13 Mar 2002 15:28:29 +0000 Subject: [mems-talk] Using AZ300 PR developer to etch Al Message-ID: Hi, According the suggestion from previuos post, I have tried to etch Al using AZ300 developer. And using AZ5214 as a mask. I found that the pattern is not good enough. Some of the pattern is etched by the developer. About 10%. And all others are quite good. What'w worng?? Can someone suggest me how to mask my Al? Or what should I do to AZ5214 for a good protestion? Also, if I use ~1.6um AZ5214 to mask a layer (~2um) Al, is it possible to etch Al thoroughly? Will the PR be etched competely before Al?? Thank You Hoyin _________________________________________________________________ MSN ,[C/4#(Q1z3LB23f*:$h&!$@(I(C&C&L1z*:,[$y!A=P2>&\ http://photos.msn.com/support/worldwide.aspx!C From david.bensaude@memscap.com Wed Mar 13 16:02:49 2002 From: david.bensaude@memscap.com (David BENSAUDE) Date: Wed, 13 Mar 2002 17:02:49 +0100 Subject: [mems-talk] meshing from GDS II Message-ID: <3C8F7829.DC41A9A8@memscap.com> Ed, MEMS XPlorer v3.1 from the MEMSCAP Design Automation branch can automatically generate meshed 2D or 3D models for ANSYS Multiphysics starting from a layout in Cadence layout editor, Virtuoso. Different available options of the automatic mesher are: - Free or swept meshings. - Glued meshings of stacked layers - Element shape (bricks, tets), size and number of nodes can be set Please contact info@memscap.com for more information. David BENSAUDE MEMSCAP Application Engineer MEMS Design Automation [demime 0.98e removed an attachment of type text/x-vcard which had a name of david.bensaude.vcf] From richard.morrison@icmechanics.com Wed Mar 13 16:07:56 2002 From: richard.morrison@icmechanics.com (Richard Morrison) Date: Wed, 13 Mar 2002 11:07:56 -0500 Subject: [mems-talk] Adhesion layer for Pt films (high temp application) References: Message-ID: <3C8F795C.3070406@icmechanics.com> Hi, I would like to suggest that you try Ti first, then try TiN second, lastly if the first 2 fail I would try Ta, I do not think the Cr will last at 600c. I assume that you can etch the Pt with an ion beam etch tool, if so that will also etch the adhesion layers. If you are wet etching the Pt in (HCL/Nitric mixtures) the TiN maybe the best choice. Be careful because Ti and Ta are etched in HF Acid mixtures. Rick Morrison rick.morrison@icmechanics.com Jvrn Koblitz wrote: >Dear MEMS-talk members, > >I am looking for a suitable adhesion layer between an LPCVD SiN >substrate layer and a 0.5 micron thick platinum layer (used as bond >pads) that is stable up to 600 deg. C. >Ideally, we would use the Pt without any adhesion layer, but I fear that >long-term stability/reliability could be an issue then. We apply >sputtering of the Pt and do have tantalum, titanium, TiN and Cr targets >in use with our sputtering machine. >Can anyone propose a suitable solution or even process? > >Many thanks in advance. > >Joern Koblitz >microFAB Bremen GmbH >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ From mrousey@tegal.com Wed Mar 13 16:33:09 2002 From: mrousey@tegal.com (mrousey@tegal.com) Date: Wed, 13 Mar 2002 08:33:09 -0800 Subject: [mems-talk] Adhesion layer for Pt films (high temp applicatio n) Message-ID: <9006BE46E48BD411940500508BDC942D0192B904@exchange1.tegal.co m> Hello Jorn, If you try to get by without an adhesion layer, you're asking for delamination problems. Believe me, I've seen enough of this problem in the past. A thin layer of Ti or TiN (~400 angstroms) will provide a nice adhesion layer. Best regards, Mark Rousey-Seidel Customer Applications Manager, Tegal Corporation -----Original Message----- From: Jvrn Koblitz [mailto:koblitz@microfab.de] Sent: Wednesday, March 13, 2002 2:05 AM To: mems-talk@memsnet.org Subject: [mems-talk] Adhesion layer for Pt films (high temp application) Dear MEMS-talk members, I am looking for a suitable adhesion layer between an LPCVD SiN substrate layer and a 0.5 micron thick platinum layer (used as bond pads) that is stable up to 600 deg. C. Ideally, we would use the Pt without any adhesion layer, but I fear that long-term stability/reliability could be an issue then. We apply sputtering of the Pt and do have tantalum, titanium, TiN and Cr targets in use with our sputtering machine. Can anyone propose a suitable solution or even process? Many thanks in advance. Joern Koblitz microFAB Bremen GmbH _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From kparshant@yahoo.com Wed Mar 13 17:28:25 2002 From: kparshant@yahoo.com (Parshant Kumar) Date: Wed, 13 Mar 2002 09:28:25 -0800 (PST) Subject: [mems-talk] Regarding the dry selective and isotropic etch for III-V Message-ID: <20020313172825.4095.qmail@web20106.mail.yahoo.com> Hi All Can you please suggest me the comapany or Institute who can do the selective isotropic dry etching of GaAs for structure layer of AlGaAs. There are reports that which suggest RIE BCl3/Cl2 combination does the purpose, if any one help me to do that or suggest me who can help to do that. parshant Try FREE Yahoo! Mail - the world's greatest free email! http://mail.yahoo.com/ From kasmith2@ix.netcom.com Wed Mar 13 17:37:07 2002 From: kasmith2@ix.netcom.com (Kenneth Smith) Date: Wed, 13 Mar 2002 09:37:07 -0800 Subject: [mems-talk] Off angle cut vs Etch V-grooves Message-ID: <3C8F8E43.5000605@ix.netcom.com> I have a question related to the information below- I have in the past supplied off angle cut 1-0-0 silicon at 9.7 degree for customer application to allow for 45 degree V-grooves and based on tolerance, I have question as to what is the min / max v-groove angle using anisotropic etch ( KOH) based on the +_1 degree tolerance of the 9.7 degree off-cut angle- Normal on-orientation 1-0-0 silicon prooduce 54.7+_ degree V-grooves for reference. Can someone help me to calculate the V-groove angles for 8.7 and 10.7 degree off-cut on the 1-0-0 silicon ( off cut is towards 1-1-0) Thanks ahead for any information on this. Regards, Ken Smith -- Kmbh Associates 47 Rocket Circle Rancho Cordova, CA 95742 U S A 510-714-5055 Efax- 510 217 4421 or 561 658 6136 High Purity Float Zone and Specialty CZ Silicon for Power, IR and Mirror Optics, Optoelectronics, MEMS, SOI, and other Semiconductor applications. Service in SOI, Polishing SSP and DSP. Quartz, Glass, Pyrex and Borofloat Wafer Supply. Anodic Bonding. SOG, SOS. From schakane@yahoo.com Wed Mar 13 17:41:44 2002 From: schakane@yahoo.com (sanjay chakane) Date: Wed, 13 Mar 2002 09:41:44 -0800 (PST) Subject: [mems-talk] humidity sensors Message-ID: <20020313174144.6816.qmail@web11001.mail.yahoo.com> Hi I'm trying to make humidity sensors using conducting polymers but there is lot of problems of degradation is their any solution thank you sanjay chakane ===== Shri. Sanjay D. Chakane,Lecturer in Physics. BJS College,Wagholi,Pune-412 207,Phone:+91(020)7050895 [O ], 7051556 [R]Fax: +91 020 7050895 Ph.D. student,Centre for advanced studies in Material Science. Dept. of Physics, University of Pune, Pune 411 007 Phone :(020) 5692678,5691712, Extn. 414, 427 Try FREE Yahoo! Mail - the world's greatest free email! http://mail.yahoo.com/ From klsmith2000@hotmail.com Wed Mar 13 17:59:31 2002 From: klsmith2000@hotmail.com (Karen Smith) Date: Wed, 13 Mar 2002 17:59:31 +0000 Subject: [mems-talk] Conductive bonding techniques in silicon Message-ID: I am looking assistance in finding techniques to join a silcion wafer (n-type) via an electrically conductive bond to a conducting handle wafer (preferably silicon). The issue is further complicated by the need to free the silcion device wafer later in the process, for the bond to be HF resitant and to not represent a contamination risk in a CMOS fab. Anodic bonding, fusion bonding and Si-Au eutectic bonding are thus not appropriate. Can anyone help me by suggesting possible avenues for me to investigate further, such as suitable metal eutectic/conductive adhesive/conductive polymer/solder layers? Details of companies already offering (or planning to offer) such services would also be gratefully received. Many thanks in advance for you assistance, Yours sincerely, Karen Smith Microsystems Consultant Coventry, UK _________________________________________________________________ Send and receive Hotmail on your mobile device: http://mobile.msn.com From fowler@seas.ucla.edu Thu Mar 14 00:12:48 2002 From: fowler@seas.ucla.edu (Mighty Platypus) Date: Wed, 13 Mar 2002 16:12:48 -0800 (PST) Subject: [mems-talk] How to remove residual SiNx ? In-Reply-To: <005a01c0aba1$fa1be3b0$d24d608c@kuko> Message-ID: Hi Wu-Cheng, One of my fellow students etches SiNx with concentrated (49%) HF. It etches away *slowly* but it will do the job without attacking the Si. Of course, HF attacks just about everything else... Jesse Fowler UCLA/MAE Dept., 420 Westwood Plaza, Room 18-121, ENGR IV Los Angeles, CA 90095-1597 | (310)825-3977 "Rule #6: There is no rule #6" -- Monty Python "ARTICLE SIX: THIS ARTICLE IS ABOLISHED" -- Constitution of Afghanistan On Tue, 13 Mar 2001, Wu-Cheng Kuo wrote: > Hi,everybody: > > I used SiNx as the KOH etching mask and etched the Silicon. After > etching the > Silicon,the SiNx remains on the structure. To fear destroying the structure,I > can't > use H3PO4 to remove the residual SiNx. Does anyone have any good ideas? > > Best Regards > > BagelKuo > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From shay@mizur.com Thu Mar 14 06:58:19 2002 From: shay@mizur.com (shay kaplan) Date: Thu, 14 Mar 2002 08:58:19 +0200 Subject: [mems-talk] Adhesion layer for Pt films (high temp application) References: Message-ID: <3C904A0B.7EFCA70C@mizur.com> Dear Jeorn, You might try to put a thin layer of polysi on top of your structure followed by thicked platinum. At the high temp cycle, Some Pt silicide will form but you will still have platinum left Shay Kaplan Jvrn Koblitz wrote: > Dear MEMS-talk members, > > I am looking for a suitable adhesion layer between an LPCVD SiN > substrate layer and a 0.5 micron thick platinum layer (used as bond > pads) that is stable up to 600 deg. C. > Ideally, we would use the Pt without any adhesion layer, but I fear that > long-term stability/reliability could be an issue then. We apply > sputtering of the Pt and do have tantalum, titanium, TiN and Cr targets > in use with our sputtering machine. > Can anyone propose a suitable solution or even process? > > Many thanks in advance. > > Joern Koblitz > microFAB Bremen GmbH > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From frank_berauer@hp.com Thu Mar 14 06:09:34 2002 From: frank_berauer@hp.com (BERAUER,FRANK (HP-Singapore,ex7)) Date: Thu, 14 Mar 2002 14:09:34 +0800 Subject: [mems-talk] Thick Photoresist Materials/Applications Message-ID: <2CFFECBFFEEEAF4DB4B2EB9BD47A7366399652@xsg07.sgp.hp.com> Dear Fellow MEMS Researchers, I am interested in thick (>10um) photoresist materials (other than SU-8) and applications. If you are working with those or know a good source of information, please let me know. Thanks! Greetings, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore P.S.: I would like to express my gratitute to those who make this discussions possible, sift through hundreds of messages promptly and help to keep the group focused and free of spam. (Is it you, Andrew M. Kuchling?) It is a great job to all of us and I think you deserve more than praise. If you ever come to my part of the world, let me know and you're in for a Chinese seafood treat (fellow MEMS researchers in Singapore are welcome to join!). From shankar@sclchd.co.in Thu Mar 14 18:56:08 2002 From: shankar@sclchd.co.in (Ravi Shankar) Date: Thu, 14 Mar 2002 13:56:08 -0500 (Etc/GMT) Subject: [mems-talk] how to etch SiO2 with RIE In-Reply-To: Message-ID: Hi Stefan, The helium is normally used for back side cooling of the wafer, so that the temperature of the bottom chuck of the RIE is distributed evenly to the wafer(as helium is a very good thermal cond.) so you see if you have temperature distributed evenly on the wafer and the plasma starts etching the anisotropy, selectivity is preserved at every point on the wafer. regds Ravi Shankar Semiconductor Complex Ltd, India On Fri, 8 Mar 2002, Stefan Wiechmann wrote: > I am also using CHF3+O2 to etch SiO2/Photoresist > and wonder how helium helps to improve uniformity ? > > Stefan Wiechmann > > _______________________________________________ > Von: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]Im > Auftrag von BobHendu@aol.com > Gesendet: Donnerstag, 7. Marz 2002 21:36 > An: mems-talk@memsnet.org > Betreff: Re: [mems-talk] how to etch SiO2 with RIE > > > There are many choices depending on the results you are looking to obtain. > CF4+4to8% O2 is pretty standard for oxide etching. You will probably need to > combine that with Helium to produce uniform results. We have also used SF6 + > Helium and it has some advantages with respect to etch rate and selectivity > to resist. If you would like to discuss further with things like etch > thickness desired, masking material and other details just drop me an email. > Bob Henderson > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From gmiller@kvh.com Thu Mar 14 14:51:05 2002 From: gmiller@kvh.com (Greg Miller) Date: Thu, 14 Mar 2002 09:51:05 -0500 Subject: [mems-talk] PDMS Message-ID: Mems group, I was wondering if anyone has RIE pattern PDMS (Sylgard 184) material and if so could you tell me the parameters used. Thanks, Greg Miller KVH gmiller@kvh.com [demime 0.98e removed an attachment of type application/ms-tnef which had a name of winmail.dat] From BobHendu@aol.com Thu Mar 14 15:07:55 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Thu, 14 Mar 2002 10:07:55 EST Subject: [mems-talk] How to remove residual SiNx ? Message-ID: <107.e7e4a12.29c216cb@aol.com> rie etch with SF6 should do the trick. Try 250 millitorr as a partial pressure using the mass flow controller to get to that pressure. Should be around 40 sccm of SF6 gas. Power level of 150 watts with a reflective of <10 watts should give descent uniformity of Nitride etch. Bob Henderson From BobHendu@aol.com Thu Mar 14 15:15:21 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Thu, 14 Mar 2002 10:15:21 EST Subject: [mems-talk] Regarding the dry selective and isotropic etch for III-V Message-ID: <106.ebb849a.29c21889@aol.com> Contact Gordon Whitlock at Trion Technology in Arizona. His phone number is 480-968-8818 From cksmith@ruf.rice.edu Thu Mar 14 15:45:36 2002 From: cksmith@ruf.rice.edu (Connie Kathleen Smith) Date: Thu, 14 Mar 2002 09:45:36 -0600 (CST) Subject: [mems-talk] Anodic Bonding of Si to Pyrex Message-ID: I need to bond Pyrex to both sides of a silicon wafer. One of the pieces of Pyrex is a full 4 inch diameter wafer (same as Si wafer) with a thickness of 0.5 inches. This is used as the base for a flow cell etched into the wafer. The other piece of Pyrex is a cover slip for microscopy work so it is only 0.13 mm in thickness and a 50mm square. Has anyone ever anodically bonded pyrex to both sides? All the literature I read only describes the process for one side. Thank you, Connie Smith Department of Chemical Engineering Rice University 6100 Main MS 362 Houston, TX 77005 Phone 713-348-3507 Fax 713-348-5478 From paolo.bondavalli@thalesgroup.com Thu Mar 14 15:58:57 2002 From: paolo.bondavalli@thalesgroup.com (Paolo Bondavalli) Date: Thu, 14 Mar 2002 16:58:57 +0100 Subject: [mems-talk] GLASS FRIT Message-ID: <3C90C8C1.B5A74A1A@thalesgroup.com> Dear Mems Experts We are tried to use glas frit in order to realize hermetic packaging of MEMS. Could you give me more information about this technique? The cure temperature, the principal suppliers, publications about it... Thanks a lot have a nice day. ********************************************************* Dr. Paolo Bondavalli R&D Engineer LABCOM - Laboratoire Interconnexions Optiques et MEMS THALES (ex THOMSON-CSF) CORPORATE RESEARCH CENTER Domaine de Corbeville, Route Departementale 128 F91404 ORSAY (FRANCE) Tel : 01 69 33 08 63 Fax : 01 69 33 08 62 Email : Paolo.Bondavalli@thalesgroup.com ********************************************************** Disclaimer: Opinions expressed herein are my own and may not represent those of my employer. ********************************************************** From Philip.KlauderJr@sea.siemens.com Thu Mar 14 16:17:14 2002 From: Philip.KlauderJr@sea.siemens.com (Klauder, Jr., Philip R.) Date: Thu, 14 Mar 2002 11:17:14 -0500 Subject: [mems-talk] Anodic Bonding of Si to Pyrex Message-ID: Hi Connie- Yes, we've been bonding multi layer stacks of Si and Pyrex in our product for 12 years now. As long as you can make electrical contact to your center piece of Silicon, you should have no problem. You could bond the Si to the thick glass disc, and then put the assembly back in your bonder to attach the cover sheet, or you could bond the entire stack at once. Phil Klauder 215-646-7400 x2151 -----Original Message----- From: Connie Kathleen Smith [mailto:cksmith@ruf.rice.edu] Sent: Thursday, March 14, 2002 10:46 AM To: mems-talk@memsnet.org Subject: [mems-talk] Anodic Bonding of Si to Pyrex I need to bond Pyrex to both sides of a silicon wafer. One of the pieces of Pyrex is a full 4 inch diameter wafer (same as Si wafer) with a thickness of 0.5 inches. This is used as the base for a flow cell etched into the wafer. The other piece of Pyrex is a cover slip for microscopy work so it is only 0.13 mm in thickness and a 50mm square. Has anyone ever anodically bonded pyrex to both sides? All the literature I read only describes the process for one side. Thank you, Connie Smith Department of Chemical Engineering Rice University 6100 Main MS 362 Houston, TX 77005 Phone 713-348-3507 Fax 713-348-5478 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From mac.mcreynolds@calipertech.com Thu Mar 14 16:25:49 2002 From: mac.mcreynolds@calipertech.com (Mac McReynolds) Date: Thu, 14 Mar 2002 08:25:49 -0800 Subject: [mems-talk] Anodic Bonding of Si to Pyrex Message-ID: Try contacting Norm Nystrom at NYS Enterprises (408)867-5668. I beleive he has done similar processing Mac McReynolds R&D Manager Caliper Technologies Corp. 605 Fairchild Drive Mountain View, CA 94043-2234 Tel: 650-623-0710 Fax: 650-623-0521 > ---------- > From: Connie Kathleen Smith > Reply To: mems-talk@memsnet.org > Sent: Thursday, March 14, 2002 7:45 AM > To: mems-talk@memsnet.org > Subject: [mems-talk] Anodic Bonding of Si to Pyrex > > I need to bond Pyrex to both sides of a silicon wafer. One of the pieces > of Pyrex is a full 4 inch diameter wafer (same as Si wafer) with a > thickness of 0.5 inches. This is used as the base for a flow cell etched > into the wafer. The other piece of Pyrex is a cover slip for microscopy > work so it is only 0.13 mm in thickness and a 50mm square. > > Has anyone ever anodically bonded pyrex to both sides? All the literature > I read only describes the process for one side. > > Thank you, > Connie Smith > Department of Chemical Engineering > Rice University > 6100 Main MS 362 > Houston, TX 77005 > Phone 713-348-3507 > Fax 713-348-5478 > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From lshelley@micrometrics.com Thu Mar 14 16:38:32 2002 From: lshelley@micrometrics.com (Liz Shelley) Date: Thu, 14 Mar 2002 11:38:32 -0500 Subject: [mems-talk] GLASS FRIT In-Reply-To: <3C90C8C1.B5A74A1A@thalesgroup.com> Message-ID: Contact FERRO Corporation Cleveland, OH > From: Paolo Bondavalli > Organization: THALES LCR > Reply-To: mems-talk@memsnet.org > Date: Thu, 14 Mar 2002 16:58:57 +0100 > To: mems-talk@memsnet.org > Subject: [mems-talk] GLASS FRIT > > Dear Mems Experts > We are tried to use glas frit in order to realize hermetic packaging of > MEMS. > Could you give me more information about this technique? > The cure temperature, the principal suppliers, publications about it... > Thanks a lot > have a nice day. > > ********************************************************* > Dr. Paolo Bondavalli > R&D Engineer > LABCOM - Laboratoire Interconnexions Optiques et MEMS > THALES (ex THOMSON-CSF) CORPORATE RESEARCH CENTER > Domaine de Corbeville, > Route Departementale 128 > F91404 ORSAY > (FRANCE) > Tel : 01 69 33 08 63 > Fax : 01 69 33 08 62 > Email : Paolo.Bondavalli@thalesgroup.com > ********************************************************** > Disclaimer: Opinions expressed herein are my own and may > not represent those of my employer. > ********************************************************** > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From richard.morrison@icmechanics.com Thu Mar 14 17:07:48 2002 From: richard.morrison@icmechanics.com (Richard Morrison) Date: Thu, 14 Mar 2002 12:07:48 -0500 Subject: [mems-talk] Conductive bonding techniques in silicon References: Message-ID: <3C90D8E4.4080501@icmechanics.com> Hi Karen, You can take advantage of the ability of metals like Aluminum (which will form a eutectic with Silicon at 477c), if you can go to that temperature then an Al/Si bond would work, it can be done in either vacuum or a N2 purged furnace. Also be aware that it will tend to dope Silicon P-type. Other metals that would work are Au, Sn, Pb, In however these may not be compatible with the fab. Rick Morrison Karen Smith wrote: > I am looking assistance in finding techniques to join a silcion wafer > (n-type) via an electrically conductive bond to a conducting handle > wafer (preferably silicon). The issue is further complicated by the > need to free the silcion device wafer later in the process, for the > bond to be HF resitant and to not represent a contamination risk in a > CMOS fab. > > Anodic bonding, fusion bonding and Si-Au eutectic bonding are thus not > appropriate. > > Can anyone help me by suggesting possible avenues for me to > investigate further, such as suitable metal eutectic/conductive > adhesive/conductive polymer/solder layers? Details of companies > already offering (or planning to offer) such services would also be > gratefully received. > > Many thanks in advance for you assistance, > > Yours sincerely, > > Karen Smith > Microsystems Consultant > Coventry, UK > > _________________________________________________________________ > Send and receive Hotmail on your mobile device: http://mobile.msn.com > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From mrousey@tegal.com Thu Mar 14 17:09:27 2002 From: mrousey@tegal.com (mrousey@tegal.com) Date: Thu, 14 Mar 2002 09:09:27 -0800 Subject: [mems-talk] Conductive bonding techniques in silicon Message-ID: <9006BE46E48BD411940500508BDC942D0192B90D@exchange1.tegal.co m> Try the Cookson web site. They make a line of products for bonding wafers to substrates. This is widely used for III-V wafer processing. The general technology uses a sheet of PVA (polyvinyl acetate) as the bonding agent. A simple bench tool is used to provide heat and pressure to create the bond. Dynatex sells an inexpensive bonding tool for the application (I visited them a few weeks ago for a demonstration). The PVA can have fillers (Ag or carbon) to make it electrically active. This should give you a direction to explore. Cheers, mark rousey-seidel -----Original Message----- From: Karen Smith [mailto:klsmith2000@hotmail.com] Sent: Wednesday, March 13, 2002 10:00 AM To: mems-talk@memsnet.org Subject: [mems-talk] Conductive bonding techniques in silicon I am looking assistance in finding techniques to join a silcion wafer (n-type) via an electrically conductive bond to a conducting handle wafer (preferably silicon). The issue is further complicated by the need to free the silcion device wafer later in the process, for the bond to be HF resitant and to not represent a contamination risk in a CMOS fab. Anodic bonding, fusion bonding and Si-Au eutectic bonding are thus not appropriate. Can anyone help me by suggesting possible avenues for me to investigate further, such as suitable metal eutectic/conductive adhesive/conductive polymer/solder layers? Details of companies already offering (or planning to offer) such services would also be gratefully received. Many thanks in advance for you assistance, Yours sincerely, Karen Smith Microsystems Consultant Coventry, UK _________________________________________________________________ Send and receive Hotmail on your mobile device: http://mobile.msn.com _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From akine@ix.netcom.com Thu Mar 14 17:21:35 2002 From: akine@ix.netcom.com (allen kine) Date: Thu, 14 Mar 2002 09:21:35 -0800 Subject: [mems-talk] Anodic Bonding of Si to Pyrex In-Reply-To: Message-ID: <4.2.0.58.20020314090050.00abbb70@popd.ix.netcom.com> Pyrex can be bonded to both sides of a wafer by anodic pulse bonding. The technique is in the literature, but I do not have the reference handy. Depending on your channel width anodic bonding can result in the thinning of the channel height due to the pyrex moving into the channel during bonding. This is also described in the literature. Depending on what materials you are putting into the flow channels, and the pressures involved other techniques for bonding are available. The literature has also used HF, sodium silicate, and polymers to bond pyrex to silicon. akine@ece.uci.edu At 09:45 AM 3/14/02 -0600, you wrote: >I need to bond Pyrex to both sides of a silicon wafer. One of the pieces >of Pyrex is a full 4 inch diameter wafer (same as Si wafer) with a >thickness of 0.5 inches. This is used as the base for a flow cell etched >into the wafer. The other piece of Pyrex is a cover slip for microscopy >work so it is only 0.13 mm in thickness and a 50mm square. > >Has anyone ever anodically bonded pyrex to both sides? All the literature >I read only describes the process for one side. > >Thank you, >Connie Smith >Department of Chemical Engineering >Rice University >6100 Main MS 362 >Houston, TX 77005 >Phone 713-348-3507 >Fax 713-348-5478 >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ From akuchlin@mems-exchange.org Thu Mar 14 17:25:03 2002 From: akuchlin@mems-exchange.org (Andrew Kuchling) Date: Thu, 14 Mar 2002 12:25:03 -0500 Subject: [mems-talk] Thick Photoresist Materials/Applications In-Reply-To: <2CFFECBFFEEEAF4DB4B2EB9BD47A7366399652@xsg07.sgp.hp.com> References: <2CFFECBFFEEEAF4DB4B2EB9BD47A7366399652@xsg07.sgp.hp.com> Message-ID: <20020314172503.GD620@crystal.mems-exchange.org> On Thu, Mar 14, 2002 at 02:09:34PM +0800, BERAUER,FRANK (HP-Singapore,ex7) wrote: >P.S.: I would like to express my gratitute to those who make > this discussions possible, sift through hundreds of > messages promptly and help to keep the group focused > and free of spam. You're welcome. I handle the actual moderation of mems-talk messages, but credit for keeping spam off our mail server is due to Greg Ward, another of the developers here at the MEMS Exchange. (Greg's done a really good job of spamproofing, too. My e-mail address is scattered all over various Web pages so I used to get 40-50 spam messages a day, but now it's down to maybe one message every two days. That's done with SpamAssassin (http://spamassassin.taint.org/), in case anyone wants to point their mail admins toward it.) -- A.M. Kuchling akuchlin@mems-exchange.org Technical Staff, MEMS Exchange Tel.: (703) 262-5368 x5374 From J.Palensky@evgroup.com Thu Mar 14 17:25:20 2002 From: J.Palensky@evgroup.com (Palensky Joshua) Date: Thu, 14 Mar 2002 10:25:20 -0700 Subject: [mems-talk] Anodic Bonding of Si to Pyrex Message-ID: <1DD2B880949BD311907B0050040C0A243DE4D2@MAGELLAN> Hello Connie, You can bond the pyrex to both sides in one process. Contact positive voltage to the silicon, and ground to the glass. If you would like to more info, please call me, or you can check out www.evgroup.com Best Regards, Josh Palensky EV Group (602) 437-9492 -----Original Message----- From: Connie Kathleen Smith [mailto:cksmith@ruf.rice.edu] Sent: Thursday, March 14, 2002 8:46 AM To: mems-talk@memsnet.org Subject: [mems-talk] Anodic Bonding of Si to Pyrex I need to bond Pyrex to both sides of a silicon wafer. One of the pieces of Pyrex is a full 4 inch diameter wafer (same as Si wafer) with a thickness of 0.5 inches. This is used as the base for a flow cell etched into the wafer. The other piece of Pyrex is a cover slip for microscopy work so it is only 0.13 mm in thickness and a 50mm square. Has anyone ever anodically bonded pyrex to both sides? All the literature I read only describes the process for one side. Thank you, Connie Smith Department of Chemical Engineering Rice University 6100 Main MS 362 Houston, TX 77005 Phone 713-348-3507 Fax 713-348-5478 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From BMoffat@yieldengineering.com Thu Mar 14 19:31:14 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Thu, 14 Mar 2002 11:31:14 -0800 Subject: [mems-talk] GLASS FRIT Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC12CDE8@exchange.yield.yield engineering.com> Paolo, At least one company has used our equipment to do this. We have an off the shelf Polymide bake oven that goes to 450 degrees centigrade, with a controlled atmosphere or vacuum. They requested a 10-7 vacuum oven to produce a vacuum under the frit, then a temperature rise to produce a glass frit melt. This sealed the area under the frit at a 10-7 vacuum. If this is the sort of equipment you are looking for please contact me for further details. Bill Moffat -----Original Message----- From: Liz Shelley [mailto:lshelley@micrometrics.com] Sent: Thursday, March 14, 2002 8:39 AM To: mems-talk@memsnet.org Subject: Re: [mems-talk] GLASS FRIT Contact FERRO Corporation Cleveland, OH > From: Paolo Bondavalli > Organization: THALES LCR > Reply-To: mems-talk@memsnet.org > Date: Thu, 14 Mar 2002 16:58:57 +0100 > To: mems-talk@memsnet.org > Subject: [mems-talk] GLASS FRIT > > Dear Mems Experts > We are tried to use glas frit in order to realize hermetic packaging of > MEMS. > Could you give me more information about this technique? > The cure temperature, the principal suppliers, publications about it... > Thanks a lot > have a nice day. > > ********************************************************* > Dr. Paolo Bondavalli > R&D Engineer > LABCOM - Laboratoire Interconnexions Optiques et MEMS > THALES (ex THOMSON-CSF) CORPORATE RESEARCH CENTER > Domaine de Corbeville, > Route Departementale 128 > F91404 ORSAY > (FRANCE) > Tel : 01 69 33 08 63 > Fax : 01 69 33 08 62 > Email : Paolo.Bondavalli@thalesgroup.com > ********************************************************** > Disclaimer: Opinions expressed herein are my own and may > not represent those of my employer. > ********************************************************** > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From gzhang99@yahoo.com Thu Mar 14 22:14:40 2002 From: gzhang99@yahoo.com (Gang Zhang) Date: Thu, 14 Mar 2002 14:14:40 -0800 (PST) Subject: [mems-talk] In/Ga eutectoid vendor. Anybody knows? In-Reply-To: <240593772F9E5C4BB5BECE5FF0B937EC12CDE8@exchange.yield.yiel d engineering.com> Message-ID: <20020314221440.77140.qmail@web14607.mail.yahoo.com> In the literature, people apply In/Ga eutectoid on si wafers as ohmic contacts. I did some search for finding a vendor. But no luck yet. Does anybody have this information? Thanks. G. Zhang Yahoo! Sports - live college hoops coverage http://sports.yahoo.com/ From pohao@seas.ucla.edu Thu Mar 14 22:44:56 2002 From: pohao@seas.ucla.edu (Po-Hao A. Huang) Date: Thu, 14 Mar 2002 14:44:56 -0800 (PST) Subject: [mems-talk] PDMS In-Reply-To: Message-ID: PDMS as in similar to RTV? Caltech's group by Dr. Y.C. Tai have done quite some amount of work on patterning rubber. Very very slow with RIE i got to warn you. adam On Thu, 14 Mar 2002, Greg Miller wrote: > Mems group, > > I was wondering if anyone has RIE pattern PDMS (Sylgard 184) material > and if so could you tell me the parameters used. > > Thanks, > > Greg Miller > KVH > gmiller@kvh.com > > [demime 0.98e removed an attachment of type application/ms-tnef which had a name of winmail.dat] > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From mnorcott@sigen.com Thu Mar 14 22:47:07 2002 From: mnorcott@sigen.com (Maurice Norcott) Date: Thu, 14 Mar 2002 14:47:07 -0800 Subject: [mems-talk] In/Ga eutectoid vendor. Anybody knows? Message-ID: <22C0729E179FDC40855355CB03915CB534BCBF@exch01.corp.local> Try Alfa/AESAR (Johnson Matthey) 30 Bond St Ward Hill, MA 01835 1-800-343-0660 Maurice H. Norcott Senior Technician Silicon Genesis Corporation 590 Division Street Campbell, CA 95008 408-871-3948 Office 408-977-6333 Pager mnorcott@Sigen.com -----Original Message----- From: Gang Zhang [mailto:gzhang99@yahoo.com] Sent: Thursday, March 14, 2002 2:15 PM To: mems-talk@memsnet.org Subject: [mems-talk] In/Ga eutectoid vendor. Anybody knows? In the literature, people apply In/Ga eutectoid on si wafers as ohmic contacts. I did some search for finding a vendor. But no luck yet. Does anybody have this information? Thanks. G. Zhang Yahoo! Sports - live college hoops coverage http://sports.yahoo.com/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From gordon@triontech.com Fri Mar 15 00:39:48 2002 From: gordon@triontech.com (Gordon Whitlock) Date: Thu, 14 Mar 2002 16:39:48 -0800 Subject: [mems-talk] Regarding the dry selective and isotropic etch for GaAs Message-ID: Regarding the dry selective and isotropic etch for III-V Message: 2 Date: Wed, 13 Mar 2002 09:28:25 -0800 (PST) Supposedly, you can add SF6 to a Cl2/BCl3 to cause the etch process to stop on AlGaAs and etch only GaAs. I don't have much experience with this, but I have read about it. I have not heard of anyone being able to etch AlGaAs selectively over GaAs though. We do have experience with non-selective etching of 3-5 material. Mike Marrs Process Engineer Trion Technology (480) 968-8818 mike@triontech.com From lavriknv@ornl.gov Thu Mar 14 23:37:27 2002 From: lavriknv@ornl.gov (Nickolay V. Lavrik) Date: Thu, 14 Mar 2002 18:37:27 -0500 Subject: [mems-talk] In/Ga eutectoid vendor. Anybody knows? References: <20020314221440.77140.qmail@web14607.mail.yahoo.com> Message-ID: <3C913437.1DEA998B@ornl.gov> I used to prepare In/Ga eutectoid myself simply by dissolving In in Ga at the temperature slightly above 30 C. It remains liquid after cooling down. I assume you can easily find suppliers of Ga and In. Nickolay Gang Zhang wrote: > In the literature, people apply In/Ga eutectoid on si > wafers as ohmic contacts. I did some search for > finding a vendor. But no luck yet. Does anybody have > this information? > > Thanks. > > G. Zhang > Yahoo! Sports - live college hoops coverage > http://sports.yahoo.com/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From robdavis@caldussemi.com Thu Mar 14 23:53:38 2002 From: robdavis@caldussemi.com (RobDavis) Date: Thu, 14 Mar 2002 15:53:38 -0800 Subject: [mems-talk] GLASS FRIT In-Reply-To: <3C90C8C1.B5A74A1A@thalesgroup.com> Message-ID: We have been working on that technology, we can change the differential thermal expansion to match. We are prototyping silicon carbide package or surface mount board with a "quartz-like" glass frit. Rob Davis Scientist Caldus Semiconductor Richland Washington 1-509-375-4775 -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of Paolo Bondavalli Sent: Thursday, March 14, 2002 7:59 AM To: mems-talk@memsnet.org Subject: [mems-talk] GLASS FRIT Dear Mems Experts We are tried to use glas frit in order to realize hermetic packaging of MEMS. Could you give me more information about this technique? The cure temperature, the principal suppliers, publications about it... Thanks a lot have a nice day. ********************************************************* Dr. Paolo Bondavalli R&D Engineer LABCOM - Laboratoire Interconnexions Optiques et MEMS THALES (ex THOMSON-CSF) CORPORATE RESEARCH CENTER Domaine de Corbeville, Route Departementale 128 F91404 ORSAY (FRANCE) Tel : 01 69 33 08 63 Fax : 01 69 33 08 62 Email : Paolo.Bondavalli@thalesgroup.com ********************************************************** Disclaimer: Opinions expressed herein are my own and may not represent those of my employer. ********************************************************** _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From stefan.blunier@imes.mavt.ethz.ch Fri Mar 15 07:44:04 2002 From: stefan.blunier@imes.mavt.ethz.ch (Blunier, Stefan) Date: Fri, 15 Mar 2002 08:44:04 +0100 Subject: [mems-talk] Thick Photoresist Materials/Applications Message-ID: Hi Frank We use AZ4562 as mask for Si-deep etching in a STS ICP system. The thickness is about 10 microns using 700rpm 5sec followed by 1700 rpm 35 sec. Greetings Stefan _____________________________________________________ Dr. Stefan Blunier ETH Zentrum, CLA G 21.2 Institut fuer Mechanische Systeme Tannenstrasse 3 CH - 8092 Zuerich Switzerland Tel: +41 1 632 77 64 Fax: +41 1 632 11 45 e-mail: blunier@imes.mavt.ethz.ch __________________________________________________ -----Original Message----- From: BERAUER,FRANK (HP-Singapore,ex7) [mailto:frank_berauer@hp.com] Sent: Donnerstag, 14. Mdrz 2002 07:10 To: 'mems-talk@memsnet.org' Subject: [mems-talk] Thick Photoresist Materials/Applications Dear Fellow MEMS Researchers, I am interested in thick (>10um) photoresist materials (other than SU-8) and applications. If you are working with those or know a good source of information, please let me know. Thanks! Greetings, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore P.S.: I would like to express my gratitute to those who make this discussions possible, sift through hundreds of messages promptly and help to keep the group focused and free of spam. (Is it you, Andrew M. Kuchling?) It is a great job to all of us and I think you deserve more than praise. If you ever come to my part of the world, let me know and you're in for a Chinese seafood treat (fellow MEMS researchers in Singapore are welcome to join!). _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From eenjrt@elec-eng.leeds.ac.uk Fri Mar 15 09:30:01 2002 From: eenjrt@elec-eng.leeds.ac.uk (JAMES.R.THORPE) Date: Fri, 15 Mar 2002 09:30:01 GMT Subject: [mems-talk] Thick Photoresist Materials/Applications In-Reply-To: <2CFFECBFFEEEAF4DB4B2EB9BD47A7366399652@xsg07.sgp.hp.com> Message-ID: <8CC0C3C6511@elec-eng.leeds.ac.uk> Frank I use Shipley SJR5740 as a positive alternative to SU-8 for films up to 80um thick and sometimes thicker :-). I've done some characterisation of the processing - contact me directly if you want more info. Rgds Jim. *********************************************** Dr Jim Thorpe Research Fellow Institute of Microwaves and Photonics School of Electronic and Electrical Engineering The University of Leeds Leeds LS2 9JT United Kingdom Tel: +44 (0)113 233 2049 (Office) Tel: +44 (0)113 233 2084 (Lab) Fax: +44 (0)113 244 9451 *********************************************** From landry@anvil.nrl.navy.mil Fri Mar 15 13:24:24 2002 From: landry@anvil.nrl.navy.mil (Glen Landry) Date: Fri, 15 Mar 2002 08:24:24 -0500 Subject: [mems-talk] SU-8 spinning problems Message-ID: <5.0.0.25.2.20020315082231.00accfe0@anvil.nrl.navy.mil> I have a problem spinning SU-8 2050 photoresist (Microchem corp). When I place the required amount on my 2" silicon wafer and spin, it does not spread uniformly. Instead it all goes to one side (if it is not exactly centered) or it spreads out in a starfish pattern, leaving large portions of the wafer uncovered. I have tried manually spreading the SU-8 across the wafer, with my pipette, but this introduces bubbles. It was also suggested to tilt the wafer to get the SU-8 to spread, or to sit it on a table. Neither of these suggestions worked, since the SU-8 2050 is so viscous and it takes so long to spread with gravity, a skin forms on the SU-8 before it spreads. Does anyone have suggestions? Glen Landry From H.Luesebrink@RI.EVGroup.com Fri Mar 15 14:23:12 2002 From: H.Luesebrink@RI.EVGroup.com (Luesebrink Helge) Date: Fri, 15 Mar 2002 09:23:12 -0500 Subject: [mems-talk] Anodic Bonding of Si to Pyrex Message-ID: Connie, At EVG we developed wafer bonding equipment for anodic bonding for Si/Py or tripple stack. Check out our Web site for further information. www.evgroup.com/applications/maincontent/content/mems/bonding.htm Best regards, Helge -----Original Message----- From: Connie Kathleen Smith [mailto:cksmith@ruf.rice.edu] Sent: Thursday, March 14, 2002 10:46 AM To: mems-talk@memsnet.org Subject: [mems-talk] Anodic Bonding of Si to Pyrex I need to bond Pyrex to both sides of a silicon wafer. One of the pieces of Pyrex is a full 4 inch diameter wafer (same as Si wafer) with a thickness of 0.5 inches. This is used as the base for a flow cell etched into the wafer. The other piece of Pyrex is a cover slip for microscopy work so it is only 0.13 mm in thickness and a 50mm square. Has anyone ever anodically bonded pyrex to both sides? All the literature I read only describes the process for one side. Thank you, Connie Smith Department of Chemical Engineering Rice University 6100 Main MS 362 Houston, TX 77005 Phone 713-348-3507 Fax 713-348-5478 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From BobHendu@aol.com Fri Mar 15 15:53:33 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Fri, 15 Mar 2002 10:53:33 EST Subject: [mems-talk] SU-8 spinning problems Message-ID: <191.3c77d72.29c372fd@aol.com> Try placing a lid on after dispense before spinning and shut off your exhaust at the same time. There are various valves like one from a company called Progressive Technologies. This will allow the thick resist to spread without loosing too much of its solvent . Use a 400 rpm spread speed and then ramp to the final spin speed for whatever thickness you desire. Bob Henderson From CHAMEL@suss.com Fri Mar 15 16:39:05 2002 From: CHAMEL@suss.com (CLIF HAMEL) Date: Fri, 15 Mar 2002 11:39:05 -0500 Subject: [mems-talk] SU-8 spinning problems Message-ID: When you apply the SU-8 have the wafer rotating about 20 or rpm to get a puddle that is centered every time. You may have to change the slow spin rpm for 2" wafers. Also, start the spin cycle at a slow acceleration, say 200 rpm per second. Clif Clifford J. Hamel Suss Microtec Applications Engineer (802) 244-5181, ext 297 >>> landry@anvil.nrl.navy.mil 03/15/02 08:24AM >>> I have a problem spinning SU-8 2050 photoresist (Microchem corp). When I place the required amount on my 2" silicon wafer and spin, it does not spread uniformly. Instead it all goes to one side (if it is not exactly centered) or it spreads out in a starfish pattern, leaving large portions of the wafer uncovered. I have tried manually spreading the SU-8 across the wafer, with my pipette, but this introduces bubbles. It was also suggested to tilt the wafer to get the SU-8 to spread, or to sit it on a table. Neither of these suggestions worked, since the SU-8 2050 is so viscous and it takes so long to spread with gravity, a skin forms on the SU-8 before it spreads. Does anyone have suggestions? Glen Landry _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From henryang@us.ibm.com Fri Mar 15 17:39:41 2002 From: henryang@us.ibm.com (Henry Yang) Date: Fri, 15 Mar 2002 09:39:41 -0800 Subject: [mems-talk] SU-8 spinning problems Message-ID: Pour the SU-8 2050 directly from the bottle. Forget the pipette. Henry Yang Glen Landry @memsnet.org on 03/15/2002 05:24:24 AM Please respond to mems-talk@memsnet.org Sent by: mems-talk-admin@memsnet.org To: mems-talk@memsnet.org cc: Subject: [mems-talk] SU-8 spinning problems I have a problem spinning SU-8 2050 photoresist (Microchem corp). When I place the required amount on my 2" silicon wafer and spin, it does not spread uniformly. Instead it all goes to one side (if it is not exactly centered) or it spreads out in a starfish pattern, leaving large portions of the wafer uncovered. I have tried manually spreading the SU-8 across the wafer, with my pipette, but this introduces bubbles. It was also suggested to tilt the wafer to get the SU-8 to spread, or to sit it on a table. Neither of these suggestions worked, since the SU-8 2050 is so viscous and it takes so long to spread with gravity, a skin forms on the SU-8 before it spreads. Does anyone have suggestions? Glen Landry _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From Avi.Laker@teccor.com Fri Mar 15 17:47:11 2002 From: Avi.Laker@teccor.com (Avi.Laker@teccor.com) Date: Fri, 15 Mar 2002 11:47:11 -0600 Subject: [mems-talk] Spreading resist - Re: mems-talk digest, Vol 1 #225 - 6 msgs Message-ID: Resist spreading - A technique used to minimize the quantity of resist dispensed on a wafer is to pre-wet the wafer with the solvent - not dry completely then dispense and spin. One of the resist companies did some work on it if I recall correctly. You can understand why they would not publicize it much. I don't know how it would work if you have very large topography but it may be worth a try. Avi Laker Teccor Electronics From vic@gennano.com Fri Mar 15 09:41:51 2002 From: vic@gennano.com (Vic Kley) Date: Fri, 15 Mar 2002 09:41:51 -0000 Subject: [mems-talk] SU-8 spinning problems References: Message-ID: <018501c1cc05$a3643240$6400a8c0@pacbell.net> "200 rpm per second" ? Cliff??? 200 rpm means 200 revolutions per minute. Are you suggesting an acceleration or is it just a mistake? Vic ----- Original Message ----- From: CLIF HAMEL To: Sent: Friday, March 15, 2002 4:39 PM Subject: Re: [mems-talk] SU-8 spinning problems > When you apply the SU-8 have the wafer rotating about 20 or rpm to get a > puddle that is centered every time. You may have to change the slow spin rpm > for 2" wafers. Also, start the spin cycle at a slow acceleration, say 200 rpm > per second. > > Clif > > Clifford J. Hamel > Suss Microtec Applications Engineer > (802) 244-5181, ext 297 > > >>> landry@anvil.nrl.navy.mil 03/15/02 08:24AM >>> > I have a problem spinning SU-8 2050 photoresist (Microchem corp). When > I place the required amount on my 2" silicon wafer and spin, it does not > spread uniformly. Instead it all goes to one side (if it is not exactly > centered) or it spreads out in a starfish pattern, leaving large portions > of the wafer uncovered. > I have tried manually spreading the SU-8 across the wafer, with my > pipette, but this introduces bubbles. It was also suggested to tilt the > wafer to get the SU-8 to spread, or to sit it on a table. Neither of these > suggestions worked, since the SU-8 2050 is so viscous and it takes so long > to spread with gravity, a skin forms on the SU-8 before it spreads. > > Does anyone have suggestions? > > Glen Landry > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From druggier@harris.com Fri Mar 15 19:13:46 2002 From: druggier@harris.com (Ruggiero, Dara) Date: Fri, 15 Mar 2002 14:13:46 -0500 Subject: [mems-talk] RE: mems-talk digest, Vol 1 #225 - 6 msgs Message-ID: <4340D6E6723AD511B6BE00508BB92E0401E2DE2B@mlbmx11.gcsd.harri s.com> Regarding: Glen Landry Subject: [mems-talk] SU-8 spinning problems I had similar difficulties with SU-8. One method that seemed to work for us was to squeegee a thin layer of SU-8 across the entire substrate. Then immediately add more resist in the center, the usual amount, and spin. A quick and dirty solution, but it worked for us and kept my substrates from looking like spin art. Best of luck to you. Dara Ruggiero Harris Corporation From kirt_williams@agilent.com Fri Mar 15 19:32:51 2002 From: kirt_williams@agilent.com (kirt_williams@agilent.com) Date: Fri, 15 Mar 2002 11:32:51 -0800 Subject: [mems-talk] SU-8 spinning problems Message-ID: > "200 rpm per second" ? Cliff??? > > 200 rpm means 200 revolutions per minute. Are you suggesting an > acceleration or is it just a mistake? When you program a newer model of spinner, you can set the acceleration in addition to the rotational speed. For example, an MTI Flexifab take takes the acceleration in krpm/s. --Kirt Williams Agilent Technologies From slu@binghamton.edu Fri Mar 15 19:48:25 2002 From: slu@binghamton.edu (Susan Lu) Date: Fri, 15 Mar 2002 14:48:25 -0500 Subject: [mems-talk] MEMS reliability Message-ID: <5.0.2.1.0.20020315144525.00a418d0@mail.cc.binghamton.edu> I am an assistant professor with expertise of reliability engineering. I am very interested in reliability modeling and failure mode analysis in MEMS. Please pass the information to me, if you have any suggestions on specific research topics and possible cooperation with companies. Thanks Susan From CHAMEL@suss.com Fri Mar 15 20:41:45 2002 From: CHAMEL@suss.com (CLIF HAMEL) Date: Fri, 15 Mar 2002 15:41:45 -0500 Subject: [mems-talk] SU-8 spinning problems Message-ID: Yes, 200 rpm per second, not thousands. A slow acceleration helps the material spread a little more evenly. Clif Clifford J. Hamel Suss Microtec Applications Engineer (802) 244-5181, ext 297 >>> kirt_williams@agilent.com 03/15/02 02:32PM >>> > "200 rpm per second" ? Cliff??? > > 200 rpm means 200 revolutions per minute. Are you suggesting an > acceleration or is it just a mistake? When you program a newer model of spinner, you can set the acceleration in addition to the rotational speed. For example, an MTI Flexifab take takes the acceleration in krpm/s. --Kirt Williams Agilent Technologies _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From c.brubaker@evgroup.com Fri Mar 15 20:45:55 2002 From: c.brubaker@evgroup.com (Brubaker Chad) Date: Fri, 15 Mar 2002 13:45:55 -0700 Subject: FW: [mems-talk] SU-8 spinning problems Message-ID: <1DD2B880949BD311907B0050040C0A243DE596@MAGELLAN> Dear Glen, I've worked pretty extensively, and have noticed this phenomenon as well. In my opinion, the following items helped to resolve this issue: 1 - Use of high acceleration to ramp up to spin off speed. I know that this is contrary to what some others on the group have said, but the principle of the high spin off makes sense. The reason for the "starfish" pattern has more to do with the surface tension of the resist than of its viscosity. Basically, once a "tendril" of resist has made it to the edge of the wafer, the path of least resistance for the flow of resist is within that "tendril", since the surface tension of the walls of the "tendril" is so high. By using high acceleration (>10,000 rpm/sec, ideally), there is a greater amount of force present to draw the resist outwards on the wafer. Additionally, the rapid acceleration motion breaks up the surface, allowing smoother flow. 2 - As one reader mentioned, the use of a cover for the coater bowl will also help more even spreading of the resist. Again, this is an attempt to reduce surface tension, this time by preventing drying of the outer surface of the resist. Because of the very high solids content (~70%), evaporation of solvent causes a very rapid increase of viscosity at the surface of the resist, and with an increase of viscosity comes an increase surface tension. The use of a cover traps evaporating solvent, and greatly reduces drying. In addition to allowing a better spread of resist, the use of a cover will improve resist uniformity as well. Best Regards, Chad Brubaker EV Group-Technology, Tel: (602) 437 9492 x 119, Fax: (602) 437 9435 E-mail: C.Brubaker@evgroup.com, Web: www.EVGroup.com, 03/15/02 -----Original Message----- From: Glen Landry [mailto:landry@anvil.nrl.navy.mil] Sent: Friday, March 15, 2002 6:24 AM To: mems-talk@memsnet.org Subject: [mems-talk] SU-8 spinning problems I have a problem spinning SU-8 2050 photoresist (Microchem corp). When I place the required amount on my 2" silicon wafer and spin, it does not spread uniformly. Instead it all goes to one side (if it is not exactly centered) or it spreads out in a starfish pattern, leaving large portions of the wafer uncovered. I have tried manually spreading the SU-8 across the wafer, with my pipette, but this introduces bubbles. It was also suggested to tilt the wafer to get the SU-8 to spread, or to sit it on a table. Neither of these suggestions worked, since the SU-8 2050 is so viscous and it takes so long to spread with gravity, a skin forms on the SU-8 before it spreads. Does anyone have suggestions? Glen Landry _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From krishna@san.rr.com Fri Mar 15 23:56:01 2002 From: krishna@san.rr.com (Krishna Kashyap) Date: Fri, 15 Mar 2002 15:56:01 -0800 Subject: [mems-talk] wafer level vacuum packaging In-Reply-To: Message-ID: I am interested to know if anyone can send me information regarding techniques, companies, research etc. in this area. Krishna Kashyap From MFAChollet@ntu.edu.sg Sat Mar 16 10:32:04 2002 From: MFAChollet@ntu.edu.sg (Franck Alexis Chollet (Asst Prof)) Date: Sat, 16 Mar 2002 18:32:04 +0800 Subject: [mems-talk] Thick Photoresist Materials/Applications Message-ID: <9C9309FA33DB90499DE4B818889DF6F714F382@exchange01.staff.mai n.ntu.edu.sg> Hi Frank, we have played with AZ9620 from Clariant and it is OK for sure up to 50um. I've read somewhere that it can reach 100um. The problems we had was for spinning (we use multiple coating), and a thin layer of residue left after developing (we RIE it off) - but most probably these can be solved with more trials. The resist is expensive though, but the profile you get are very good (i.e., 'vertical') with a contact aligner and it is a positive chemistry (acetone washable). Franck (note the c :-) "-----Original Message----- "From: BERAUER,FRANK (HP-Singapore,ex7) [mailto:frank_berauer@hp.com] "Sent: Thursday, 14 March, 2002 14:10 "To: 'mems-talk@memsnet.org' "Subject: [mems-talk] Thick Photoresist Materials/Applications " " "Dear Fellow MEMS Researchers, " "I am interested in thick (>10um) photoresist materials (other "than SU-8) and applications. If you are working with those or "know a good source of information, please let me know. Thanks! " "Greetings, " Frank Berauer " Senior R&D Engineer " Hewlett-Packard Singapore " "P.S.: I would like to express my gratitute to those who make " this discussions possible, sift through hundreds of " messages promptly and help to keep the group focused " and free of spam. (Is it you, Andrew M. Kuchling?) " It is a great job to all of us and I think you deserve " more than praise. If you ever come to my part of the " world, let me know and you're in for a Chinese seafood " treat (fellow MEMS researchers in Singapore are welcome " to join!). "_______________________________________________ "mems-talk@memsnet.org mailing list: to unsubscribe or change your list "options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk "Hosted by the MEMS Exchange, providers of MEMS processing services. "Visit us at http://www.mems-exchange.org/ " From jizheng@mtu.edu Sun Mar 17 18:08:08 2002 From: jizheng@mtu.edu (Jin Zheng) Date: Sun, 17 Mar 2002 13:08:08 -0500 Subject: [mems-talk] Light source for macro-porous Si formation References: Message-ID: <3C94DB88.33D87239@mtu.edu> Hi All, Does any one know what kind of light source is suitable for macro porous Si formation (from small sample to full wafer). Do I need filters and lens? Where can I get them? Thanks in advance. Jin From weiwei2@pd.jaring.my Mon Mar 18 10:32:01 2002 From: weiwei2@pd.jaring.my (LEOW Cheah Wei) Date: Mon, 18 Mar 2002 02:32:01 -0800 (Pacific Standard Time) Subject: [mems-talk] microassembly system Message-ID: <3C95C221.000003.32441@juice-station> I'm interested to do microassembly of MEMS structure, like putting some microparts onto a cantilever beam tip. I haven't done anything on that and our group is planning to procure some equipment for that purpose Please suggest way to do microassembly. e.g. suggestion of microassembly system vendor, techniques LEOW Cheah Wei Photonic Research Group, Electrical Eng Faculty, Universiti Teknologi Malaysia [demime 0.98e removed an attachment of type image/gif] From mike.mattes@medtronic.com Mon Mar 18 15:29:56 2002 From: mike.mattes@medtronic.com (Mike Mattes) Date: Mon, 18 Mar 2002 09:29:56 -0600 Subject: [mems-talk] wafer level vacuum packaging Message-ID: Has any company actually commercialized a product using wafer level packaging? Best Regards, Mike Mattes Medtronic, Inc. >>> krishna@san.rr.com 03/15/02 04:56PM >>> I am interested to know if anyone can send me information regarding techniques, companies, research etc. in this area. Krishna Kashyap _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From robdavis@caldussemi.com Mon Mar 18 18:32:06 2002 From: robdavis@caldussemi.com (RobDavis) Date: Mon, 18 Mar 2002 10:32:06 -0800 Subject: [mems-talk] wafer level vacuum packaging In-Reply-To: Message-ID: We are in the prototype stages of a total silicon carbide package and chip for extreme service. Silicon carbide is good as a semiconductor over 600C and our resistors good to 1000 C using high temperature contacts. The package is made from polycrystalline silicon carbide wafers and sealing is done in a controlled atmosphere furnace. Rob -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of Mike Mattes Sent: Monday, March 18, 2002 7:30 AM To: mems-talk@memsnet.org Subject: Re: [mems-talk] wafer level vacuum packaging Has any company actually commercialized a product using wafer level packaging? Best Regards, Mike Mattes Medtronic, Inc. >>> krishna@san.rr.com 03/15/02 04:56PM >>> I am interested to know if anyone can send me information regarding techniques, companies, research etc. in this area. Krishna Kashyap _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From yus@me.umn.edu Mon Mar 18 19:59:33 2002 From: yus@me.umn.edu (Sun Yu) Date: Mon, 18 Mar 2002 13:59:33 -0600 Subject: [mems-talk] Hexsil process In-Reply-To: References: Message-ID: <5.1.0.14.0.20020318135832.00b25500@me.umn.edu> What are the major problems when forming a structure using the HEXSIL process? Thanks. Sun From kirt_williams@agilent.com Mon Mar 18 23:52:09 2002 From: kirt_williams@agilent.com (kirt_williams@agilent.com) Date: Mon, 18 Mar 2002 15:52:09 -0800 Subject: [mems-talk] Decon-Dalo Resist Pen Supplier Message-ID: Where can I buy a Decon-Dalo brand resist pen? This looks like an ink pen, but writes a resist material that can be used in plasma etching and other applications. It is handy for quick tests and for touching up a bad photoresist spin. A U.S. supplier is preferred. And no, they don't have them at Radio Shack. --Kirt Williams Agilent Technologies From mnorcott@sigen.com Tue Mar 19 00:07:29 2002 From: mnorcott@sigen.com (Maurice Norcott) Date: Mon, 18 Mar 2002 16:07:29 -0800 Subject: [mems-talk] Decon-Dalo Resist Pen Supplier Message-ID: <22C0729E179FDC40855355CB03915CB534BCD5@exch01.corp.local> http://www.mgchemicals.com/products/416rp.html -----Original Message----- From: kirt_williams@agilent.com [mailto:kirt_williams@agilent.com] Sent: Monday, March 18, 2002 3:52 PM To: mems-talk@memsnet.org Subject: [mems-talk] Decon-Dalo Resist Pen Supplier Where can I buy a Decon-Dalo brand resist pen? This looks like an ink pen, but writes a resist material that can be used in plasma etching and other applications. It is handy for quick tests and for touching up a bad photoresist spin. A U.S. supplier is preferred. And no, they don't have them at Radio Shack. --Kirt Williams Agilent Technologies _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From BobHendu@aol.com Tue Mar 19 00:21:42 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Mon, 18 Mar 2002 19:21:42 EST Subject: [mems-talk] Decon-Dalo Resist Pen Supplier Message-ID: Sounds like a good product. Maybe available at photoshack. Only kidding From thinkerberry@hotmail.com Tue Mar 19 00:46:17 2002 From: thinkerberry@hotmail.com (Ken Kwon) Date: Mon, 18 Mar 2002 16:46:17 -0800 Subject: [mems-talk] thermomigration of Al Message-ID: Hi, Can you recommend a good article or a good book about thermomigration of aluminium on silicon and/or polysilicon? Pleae email me if you know any. thank you Ken _________________________________________________________________ Send and receive Hotmail on your mobile device: http://mobile.msn.com From rogerbr@earthlink.net Tue Mar 19 02:23:08 2002 From: rogerbr@earthlink.net (Roger Brennan) Date: Mon, 18 Mar 2002 18:23:08 -0800 Subject: [mems-talk] Decon-Dalo Resist Pen Supplier Message-ID: <01C1CEA9.F45BDB20.rogerbr@earthlink.net> Hi Kirk, I found a Dalo resist pen on http://www.megauk.com/artwork_aids.php I hope this is the one you want. Roger Brennan -----Original Message----- From: kirt_williams@agilent.com [SMTP:kirt_williams@agilent.com] Sent: Monday, March 18, 2002 3:52 PM To: mems-talk@memsnet.org Subject: [mems-talk] Decon-Dalo Resist Pen Supplier Where can I buy a Decon-Dalo brand resist pen? This looks like an ink pen, but writes a resist material that can be used in plasma etching and other applications. It is handy for quick tests and for touching up a bad photoresist spin. A U.S. supplier is preferred. And no, they don't have them at Radio Shack. --Kirt Williams Agilent Technologies _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From libzhou@yahoo.com Tue Mar 19 03:26:42 2002 From: libzhou@yahoo.com (lib zhou) Date: Mon, 18 Mar 2002 19:26:42 -0800 (PST) Subject: [mems-talk] How to get 2" Si wafer and etch 45 degree V-groove? Message-ID: <20020319032642.73085.qmail@web20306.mail.yahoo.com> Hi,Dear All: I am interested to know if anyone can send me some information which company can still sell high quality 2" single-crystal silicon wafer. by the way, I have an another question related to (100) Si anisotropic etch by KOH, how can get a 45 (or 135)degree bevel plane at the end of a V-groove, this angle refer to the inclination of the end bevel plane to the V-groove axes line (or bottom line). I think the method cuting (100) silicon at 9.7 degree angle can only get the bevel plane have a 45degree to Si surface, the angle between the bevel plane and the V-groove bottom line is still -54.7 degree. Thanks ahead and best regards, Lib Zhou Yahoo! Sports - live college hoops coverage From shay@mizur.com Tue Mar 19 06:59:03 2002 From: shay@mizur.com (shay kaplan) Date: Tue, 19 Mar 2002 08:59:03 +0200 Subject: [mems-talk] wafer level vacuum packaging References: Message-ID: <3C96E1B7.E5727149@mizur.com> Mike, Try Shellcase in Israel, They are manufacturing for several device vendors. Shay Kaplan Mike Mattes wrote: > Has any company actually commercialized a product using wafer level > packaging? > > Best Regards, > Mike Mattes > Medtronic, Inc. > > >>> krishna@san.rr.com 03/15/02 04:56PM >>> > I am interested to know if anyone can send me information regarding > techniques, companies, research etc. in this area. > > Krishna Kashyap > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From stefan.blunier@imes.mavt.ethz.ch Tue Mar 19 08:05:28 2002 From: stefan.blunier@imes.mavt.ethz.ch (Blunier, Stefan) Date: Tue, 19 Mar 2002 09:05:28 +0100 Subject: [mems-talk] Decon-Dalo Resist Pen Supplier Message-ID: Hi Kirt I had the same problem a vew months ago. By searching the web I found the macgnufacturer Decon Laboratories Limited http://www.decon.co.uk/german/index.htm Regards Stefan _____________________________________________________ Dr. Stefan Blunier ETH Zentrum, CLA G 21.2 Institut fuer Mechanische Systeme Tannenstrasse 3 CH - 8092 Zuerich Switzerland Tel: +41 1 632 77 64 Fax: +41 1 632 11 45 e-mail: blunier@imes.mavt.ethz.ch __________________________________________________ -----Original Message----- From: kirt_williams@agilent.com [mailto:kirt_williams@agilent.com] Sent: Dienstag, 19. Mdrz 2002 00:52 To: mems-talk@memsnet.org Subject: [mems-talk] Decon-Dalo Resist Pen Supplier Where can I buy a Decon-Dalo brand resist pen? This looks like an ink pen, but writes a resist material that can be used in plasma etching and other applications. It is handy for quick tests and for touching up a bad photoresist spin. A U.S. supplier is preferred. And no, they don't have them at Radio Shack. --Kirt Williams Agilent Technologies _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From kasmith2@ix.netcom.com Tue Mar 19 15:01:53 2002 From: kasmith2@ix.netcom.com (Kenneth Smith) Date: Tue, 19 Mar 2002 07:01:53 -0800 Subject: [mems-talk] How to get 2" Si wafer and etch 45 degree V-groove? References: <20020319032642.73085.qmail@web20306.mail.yahoo.com> Message-ID: <3C9752E1.3060908@ix.netcom.com> Lib, Contact me on the 2" . On the the material that you are using that you had expected the 45 degree and obtained the 54.7 degree was clearly not Off cut at 9.7 degree as this Off cut WILL obtain the 45 degree V-groove. We have supplied this material to other users and have not had incident of poor yields and obtained the 45 degree V groove. It appears that your material is cut ON orientation. Regards, Ken Smith lib zhou wrote: > Hi,Dear All: > > I am interested to know if anyone can send me some information which company > can still sell high quality 2" single-crystal silicon wafer. by the way, I have an another > question related to (100) Si anisotropic etch by KOH, how can get a 45 (or 135)degree bevel plane at the end of a V-groove, this angle refer to the inclination of the end bevel plane to the V-groove axes line (or bottom line). I think the method cuting (100) silicon at 9.7 degree angle can only get the bevel plane have a 45degree to Si surface, the angle between the bevel plane and the V-groove bottom line is still -54.7 degree. > > > Thanks ahead and best regards, > > Lib Zhou > Yahoo! Sports - live college hoops coverage > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ > > -- Kmbh Associates 47 Rocket Circle Rancho Cordova, CA 95742 U S A 510-714-5055 Efax- 510 217 4421 or 561 658 6136 High Purity Float Zone and Specialty CZ Silicon for Power, IR and Mirror Optics, Optoelectronics, MEMS, SOI, and other Semiconductor applications. Service in SOI, Polishing SSP and DSP. Quartz, Glass, Pyrex and Borofloat Wafer Supply. Anodic Bonding. SOG, SOS. From aminalimari@rogers.com Tue Mar 19 18:31:05 2002 From: aminalimari@rogers.com (Amin Abdul-Fattah) Date: Tue, 19 Mar 2002 13:31:05 -0500 Subject: [mems-talk] Need info @ design of torsional micro-mirror (similar to TI DLP element) Message-ID: <006201c1cf74$3b031be0$7ace6618@rchrd.phub.net.cable.rogers. com> Hi, I am looking for the general equations that govern the design of torsional micro-mirror similar to an element in the TI DLP. Thanks for your assistance. Amin Imari From aminalimari@rogers.com Tue Mar 19 18:44:27 2002 From: aminalimari@rogers.com (Amin Abdul-Fattah) Date: Tue, 19 Mar 2002 13:44:27 -0500 Subject: [mems-talk] Microchannel Heat Sink for ICs Message-ID: <00b301c1cf76$192796c0$7ace6618@rchrd.phub.net.cable.rogers. com> Re: Microchannel Heat Sink for ICs Hello, I am working on a study on microchannel heat sinks for ICs I need info about real implementation of these elements in industry. Also any feasibility study. Thanks for your assistance. Amin Imari ATE Ottawa-Canada Email: aminalimari@rogers.com From yus@me.umn.edu Tue Mar 19 22:24:00 2002 From: yus@me.umn.edu (Sun Yu) Date: Tue, 19 Mar 2002 16:24:00 -0600 Subject: [mems-talk] cantilevers In-Reply-To: <5.1.0.14.0.20020318135832.00b25500@me.umn.edu> References: Message-ID: <5.1.0.14.0.20020319162240.00b20e80@me.umn.edu> We are interested in purchasing some cantilevers with a stiffness of 10N/m to 30N/m. It does not have to be piezoresistive or anything like that, just Si structures. Any information is appreciated. Regards, Sun From michael.martin@louisville.edu Tue Mar 19 22:36:36 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Tue, 19 Mar 2002 17:36:36 -0500 Subject: [mems-talk] Pt RIE? Message-ID: Hi all, Can anyone recommend chemistry and parameters for anisotropically plasma etching Pt/Ti or Pt/Cr using a positive resist? The reactor is parallel plate at 13MHz. I'm currently using 1813 but that can change. Thanks, Mike From jonathan_simon@agilent.com Wed Mar 20 03:25:07 2002 From: jonathan_simon@agilent.com (Jonathan Simon) Date: Tue, 19 Mar 2002 19:25:07 -0800 Subject: [mems-talk] Still accepting abstracts.... Message-ID: We are still accepting abstracts until April 5 for the MEMS/Nanotechnology joint symposium at this year's International Mechanical Engineering Congress and Exposition in New Orleans, LA. Please see http://www.asme.org/congress for more details. Microelectromechanical Systems Subdivision MEMS and Nanotechnology Symposium A joint collaboration between the MEMS subdivision, and the Advanced Energy Systems, Aerospace, Applied Mechanics, Bioengineering, Electronics and Photonics Packaging, Fluids Engineering, Heat Transfer, Manufacturing Engineering, Materials, and Non-Destructive Evaluation Engineering Divisions The goal of this symposium is to bring together the best work from the many areas of research in MEMS and Nano Technologies. It is the ideal forum to exchange ideas and technologies in these rapidly evolving multidisciplinary fields. This year ten different ASME divisions are jointly sponsoring MEMS sessions, which are typically attended by hundreds of attendees from all areas of ASME. All contributions are published together in a single volume. Last year we were in "The Big Apple." This year, it's "The Big Easy" - New Orleans. The conference will be held at the New Orleans Hilton Hotel and the Ernest Morial Convention Center. Papers addressing nanotechnology topics are highly encouraged as ASME establishes its leadership role in this revolutionary new field. A poster session will be held not only to accommodate the growing number of quality papers, but also to provide a platform for demonstrations and one-on-one interactions. The purpose of the symposia is to provide a means of reporting the latest developments on MEMS for a wide range of applications. Topics of interest include, but are not limited to: * Adaptive materials/structures for MEMS * Design methodology, modeling and simulation techniques, and characterization of micro/nano scale devices * Physics and mechanics of nanotechnology and nanodevices * Integration, modeling, and experiments of nanodevices on MEMS * Aspects of micro and nano machining and related processing and tolerance * Metrology and analytical techniques for nanotechnology * Novel processes and tools for unique nano and micro structures * Fundamental micro-scale issues including structures, dynamics, tribology, fluidics, heat transfer, and surface physics * Wafer level, or hybrid packaging of MEMS; packaging for RF, optical, and Bio-MEMS * Micro-sensors for acceleration, pressure, force, strain, temperature, flow, or bio-systems * Micro-actuators based on electrostatic, electromagnetic, thermomechanical, thermochemical, phase transition (and other smart materials), and hydraulic phenomena * Micro-systems including micro-robotics, Total Analytical Systems for biochemical assays, and MEMS-based power sources * Fluidic devices and systems including valves, flow control, microdosing, mixing, filtering, cytometry, or pumping * Fundamental science of microfluidic transport of gases, liquids, complex fluids, biological materials, or flows containing particulates * Microflow measurement techniques including flow visualization and sensing of flow properties * MEMS for Minimally-Invasive Surgery, drug delivery systems, and micro implantable devices * Micro/Nanofabricated tissue constructs, Biomimetic Substrates and Protein-substrate interactions * Rapid prototyping of BioMEMS devices An award for the "Best Student Paper" will be presented during the conference to encourage young MEMS protigis. Please indicate in your submission whether the first author is a student so that it can be entered into the selection process for this award. Abstracts will be peer reviewed. Authors notified of acceptance will prepare manuscripts from four to eight pages in length formatted according to ASME standards. Author kits and writer's guidelines are available online at http://www.asme.org/pubs/authors/index.html. Author kits will also be sent to authors whose abstracts are accepted in time for preparation of the final manuscript. Final manuscripts will be published in CD-ROM proceedings available at the meeting. The MEMS subdivision invites interested parties to join ASME and the Microelectromechanical Systems Subdivision. Membership information is available at http://www.asme.org/memb/. Specific information about the new ASME Subdivision of MEMS may be found at http://www.asme.org/divisions/mems/. Schedule Abstracts due by email ONLY (PDF format) Friday, March 1, 2002 (EXTENDED TO APRIL 5) Authors notified of abstract acceptance May 15, 2002 Electronic manuscript submission (no later than) August 1, 2002 Abstracts Prospective authors are asked to submit electronic versions (PDF format) of a 600 word abstract (plus 1 page of figures) to Prof. Kimberly Turner - turner@engineering.ucsb.edu. The abstract should have a heading that includes the title, authors with communicating author underlined, word count, and the following information for the communicating author: affiliation, mailing address, telephone, FAX numbers and e-mail address. The abstract must describe results already achieved, not proposed goals. Prospective authors may indicate preference for poster or oral sessions. Authors may also indicate a sponsoring division's area of expertise most relevant to their topic. Sponsoring Organizers Please feel free to contact any of the sponsoring organizers below for additional information, however all abstracts should be sent to Prof. Turner. MEMS: Prof. Kimberly Turner, University of California, Santa Barbara, (805) 893-5106, turner@engineering.ucsb.edu, or Dr. Jonathan Simon, Agilent Laboratories, (650) 485-2608, jonathan_simon@agilent.com Micro-Fluidics: Prof. Kenny Breuer, Brown University, (401) 863-2870, kbreuer@brown.edu. Medical Applications of Microsystems: Prof. Rob Keynton, University of Louisville, (502) 852-6356, r0keyn01@gwise.louisville.edu MEMS Packaging: Prof. Shaochen Chen, University of Texas at Austin, (512) 232-6094, scchen@mail.utexas.edu Manufacturing of MEMS, and Related Micro and Nano Systems: Prof. Ajay P. Malshe, University of Arkansas, (501) 575-6561, apm2@engr.uark.edu Advanced Energy Systems: Prof. Richard B. Peterson, Oregon State University, (541) 737-7095, Richard.Peterson@orst.edu Aerospace: Prof. Martin Dunn, University of Colorado, Boulder, (303) 492-6542, dunnm@spot.colorado.edu Heat Transfer: Prof. Ken Goodson, Stanford University, (650) 725-2086 , goodson@stanford.edu Non-Destructive Evaluation: Prof. Cetin Cetinkaya, Clarkson University, (315) 268-6514, cetin@clarkson.edu Electronics Materials: Dr. Qing Ma, Intel, (408)765-2116, qing.ma@intel.com, or Prof. Gabriel M. Rebeiz, University of Michigan, (734) 647-1793, rebeiz@umich.edu Modeling and Experiments on Micro/Nano systems: Prof. Junghoon Lee, Northwestern University, (847) 491-2743, junghoon@northwestern.edu From yangzunxian@hotmail.com Wed Mar 20 03:30:53 2002 From: yangzunxian@hotmail.com (=?gb2312?B?0e7X8M/I?=) Date: Wed, 20 Mar 2002 11:30:53 +0800 Subject: [mems-talk] oxide sharpening of silicon Message-ID: all mems members : I am a student in a chinese institute, now I want to find some ways to sharpen my silicon tips which are etched in KOH solution , can anybody tell me how to control the tip shape without affecting the sharpness of the tips and the height of those yours sinceresly 2002.3.20 From soulou2000@yahoo.fr Wed Mar 20 11:15:03 2002 From: soulou2000@yahoo.fr (=?iso-8859-1?q?sou=20zou?=) Date: Wed, 20 Mar 2002 12:15:03 +0100 (CET) Subject: [mems-talk] CAD tool for Grey Scale Mask making Message-ID: <20020320111503.97324.qmail@web13404.mail.yahoo.com> hi mems-talk members ! did someone knows any CAD (computer aided design) tool to make a grey scale mask (also called half tone mask), for lithography applications and micromachining ? In fact, I could get access to L-Edit, Mems Pro, Intellisuite and may be MemsExpert (from Coventor) softwares. And I am wondering if there is any kind of option provided in these tools, which allow me to make this kind of gradually toned masks. If not is there any other design tool, which could help in that matter ? Thank you everybody for your help. Sofiane --------------------------------- Yahoo! Mail -- Une adresse @yahoo.fr gratuite et en frangais ! From kruhmer@cox.net Wed Mar 20 18:07:37 2002 From: kruhmer@cox.net (kruhmer@suss.com) Date: Wed, 20 Mar 2002 10:07:37 -0800 Subject: [mems-talk] cantilevers In-Reply-To: <5.1.0.14.0.20020319162240.00b20e80@me.umn.edu> Message-ID: <000b01c1d03a$1e609050$2520a8c0@KLAUSR> Contact Team Nanotec: Mr. Johann Greschner: tn.greschner@real-net.de > -----Original Message----- > From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On > Behalf Of Sun Yu > Sent: Tuesday, March 19, 2002 2:24 PM > To: mems-talk@memsnet.org > Subject: [mems-talk] cantilevers > > > We are interested in purchasing some cantilevers with a stiffness > of 10N/m > to 30N/m. It does not have to be piezoresistive or anything like > that, just > Si structures. Any information is appreciated. > > Regards, > > Sun > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From amandaplimmer@hotmail.com Wed Mar 20 18:24:51 2002 From: amandaplimmer@hotmail.com (Amanda Plimmer) Date: Wed, 20 Mar 2002 18:24:51 +0000 Subject: [mems-talk] Plating metal into SU-8 Message-ID: Hi Does anyone out there have any experience of plating a metal ( I am trying copper) into the structure of SU-8? What technique is used and what results are obtained? Hope someone can help! Amanda Plimmer Denning Group Inorganic Chemistry Lab University of Oxford ------------------------------------------------ Amanda Plimmer Lincoln College Turl St Oxford OX1 3DR 07899 988238 internal ext. 20979 _________________________________________________________________ MSN Photos is the easiest way to share and print your photos: http://photos.msn.com/support/worldwide.aspx From vic@gennano.com Wed Mar 20 10:36:24 2002 From: vic@gennano.com (Vic Kley) Date: Wed, 20 Mar 2002 10:36:24 -0000 Subject: [mems-talk] cantilevers References: <5.1.0.14.0.20020319162240.00b20e80@me.umn.edu> Message-ID: <04f901c1cffb$167a2890$6400a8c0@pacbell.net> Please specify device basic measurements- height, width, thickness of substrate and length of cantilever and we may be able to quote you. Please email me direct with name, email address, organization, phone number, fax number and address so we can respond properly. Vic General Nanotechnology vic@gennano.com ----- Original Message ----- From: Sun Yu To: Sent: Tuesday, March 19, 2002 10:24 PM Subject: [mems-talk] cantilevers > We are interested in purchasing some cantilevers with a stiffness of 10N/m > to 30N/m. It does not have to be piezoresistive or anything like that, just > Si structures. Any information is appreciated. > > Regards, > > Sun > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From Gary.H.Bernstein.1@nd.edu Wed Mar 20 19:26:05 2002 From: Gary.H.Bernstein.1@nd.edu (Gary Bernstein) Date: Wed, 20 Mar 2002 14:26:05 -0500 Subject: [mems-talk] single crystalline quartz micromachining Message-ID: <5.1.0.14.2.20020320142238.0242a588@nd.edu> Hello, Can anyone give me some basic references on the micromachining of single crystalline quartz? The closer to a tutorial on the materials and basic processing the better. Thanks very much, Gary H. Bernstein University of Notre Dame bernstein.1@nd.edu ______________________________________________________________ Gary H. Bernstein (219) 631-6269 (office) Professor and Associate Chair (219) 631-4393 (fax) Department of Elec. Eng. (219) 277-0752 (home) 275 Fitzpatrick Hall University of Notre Dame Notre Dame, IN 46556 gary.h.bernstein.1@nd.edu See webpages at http://www.nd.edu/~micro/ http://www.nd.edu/~gbernste/ _______________________________________________________________ From x.li@bioprocessors.com Wed Mar 20 21:13:56 2002 From: x.li@bioprocessors.com (Xinyu Li) Date: Wed, 20 Mar 2002 16:13:56 -0500 Subject: [mems-talk] Changing PDMS surface from hydrophobic into hydrophilic In-Reply-To: Message-ID: <000001c1d054$25741780$8970100a@xli> Dear colleagues, Besides using oxygen plasma treat PDMS surface, are there any other ways to change it from hydrophobic into hydrophilic? Thanks. Xinyu Li, PhD Senior Scientist Bioprocessors 35-C Cabot Road Woburn, MA 01801 Tel: (781)935-1400 ext. 18 From MGhantasala@groupwise.swin.edu.au Wed Mar 20 21:20:50 2002 From: MGhantasala@groupwise.swin.edu.au (Muralidhar K. Ghantasala) Date: Thu, 21 Mar 2002 08:20:50 +1100 Subject: [mems-talk] Plating metal into SU-8 Message-ID: Yes. We did copper plating (used acid copper) into Su-8 mould. Two patterning methods were used. Conventional lithography patterning as well as laser micromachininng of SU-8 and plating. Both worked satisfactorily. cheers Muralidhar >>> amandaplimmer@hotmail.com 03/21/02 05:24AM >>> Hi Does anyone out there have any experience of plating a metal ( I am trying copper) into the structure of SU-8? What technique is used and what results are obtained? Hope someone can help! Amanda Plimmer Denning Group Inorganic Chemistry Lab University of Oxford ------------------------------------------------ Amanda Plimmer Lincoln College Turl St Oxford OX1 3DR 07899 988238 internal ext. 20979 _________________________________________________________________ MSN Photos is the easiest way to share and print your photos: http://photos.msn.com/support/worldwide.aspx _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From beall@boulder.nist.gov Wed Mar 20 21:40:00 2002 From: beall@boulder.nist.gov (Jim Beall) Date: Wed, 20 Mar 2002 14:40:00 -0700 Subject: [mems-talk] single crystalline quartz micromachining In-Reply-To: <5.1.0.14.2.20020320142238.0242a588@nd.edu> References: <5.1.0.14.2.20020320142238.0242a588@nd.edu> Message-ID: A reference on wet etching crystalline quartz is: "Etch rates of crystallographc planes in Z-cut quartz - experiments and simulation," Pelle Rangsten, et al, J. Micromech. Microeng. * (1998) pp. 1-6. A paper on channel etching by reactive ion etching is: "Planar quartz chips with submicron channels for 2-dimensional capillary electrophoresis applications," H. Becker, et al, J. Micromech. Microeng., 8, (1998) pp24-28. >Hello, > >Can anyone give me some basic references on the micromachining of >single crystalline quartz? The closer to a tutorial on the materials >and basic processing the better. > >Thanks very much, > >Gary H. Bernstein -- - Jim Beall 303-497-5989 beall@boulder.nist.gov From krishna@san.rr.com Thu Mar 21 00:01:02 2002 From: krishna@san.rr.com (Krishna Kashyap) Date: Wed, 20 Mar 2002 16:01:02 -0800 Subject: [mems-talk] wafer level vacuum packaging In-Reply-To: Message-ID: is it vacuum packaging? is so is it under 100 millitorr? for how long can the vacuum stay? krishna -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of RobDavis Sent: Monday, March 18, 2002 10:32 AM To: mems-talk@memsnet.org Subject: RE: [mems-talk] wafer level vacuum packaging We are in the prototype stages of a total silicon carbide package and chip for extreme service. Silicon carbide is good as a semiconductor over 600C and our resistors good to 1000 C using high temperature contacts. The package is made from polycrystalline silicon carbide wafers and sealing is done in a controlled atmosphere furnace. Rob -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of Mike Mattes Sent: Monday, March 18, 2002 7:30 AM To: mems-talk@memsnet.org Subject: Re: [mems-talk] wafer level vacuum packaging Has any company actually commercialized a product using wafer level packaging? Best Regards, Mike Mattes Medtronic, Inc. >>> krishna@san.rr.com 03/15/02 04:56PM >>> I am interested to know if anyone can send me information regarding techniques, companies, research etc. in this area. Krishna Kashyap _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From eenjrt@elec-eng.leeds.ac.uk Thu Mar 21 09:37:24 2002 From: eenjrt@elec-eng.leeds.ac.uk (JAMES.R.THORPE) Date: Thu, 21 Mar 2002 09:37:24 GMT Subject: [mems-talk] Plating metal into SU-8 In-Reply-To: Message-ID: <95C306A443B@elec-eng.leeds.ac.uk> Amanda, I've used sputtering (Au) and electroless deposition (Cu) for the coating of SU-8 structures. Sputtering has the advantage of increased adhesion over electroless plating, however, there are restrictions on where the deposition takes place - for example uniform coatings on high aspect ratio structures are problematic. In this regard electroless is better, but in my experience the adhesion has not been as good. This is a problem when undertaking further electro-deposition of 'internally stressed' metal films. Rgds Jim. *********************************************** Dr Jim Thorpe Research Fellow Institute of Microwaves and Photonics School of Electronic and Electrical Engineering The University of Leeds Leeds LS2 9JT United Kingdom Tel: +44 (0)113 233 2049 (Office) Tel: +44 (0)113 233 2084 (Lab) Fax: +44 (0)113 244 9451 *********************************************** From hberney@nmrc.ucc.ie Thu Mar 21 09:15:56 2002 From: hberney@nmrc.ucc.ie (Helen Berney) Date: Thu, 21 Mar 2002 09:15:56 +0000 Subject: [mems-talk] Plating metal into SU-8 References: Message-ID: <3C99A4CC.26945083@nmrc.ucc.ie> Hi Amanda, we have coated the side walls of an SU-8 channel structure with a couple of different metal, platinum and copper included. We used a shadow mask type process with a stainless steel stencil as the mask. There were some problems with the metal spreading into the channel, which we resolved by using channel inserts. I have some cross-sections if you'd like to take a look at them I can forward the images. all the best, Helen. Dr Helen Berney, MIEEE MEBF National Microelectronics Research Centre, Prospect Row, Cork, Ireland Tel +353-21-4904010 Fax 353-21-4270271 Email hberney@nmrc.ie Webpage http://www.nmrc.ie/research/transducers-group/index.html Amanda Plimmer wrote: > Hi > > Does anyone out there have any experience of plating a metal ( I am trying > copper) into the structure of SU-8? What technique is used and what results > are obtained? Hope someone can help! > > Amanda Plimmer > Denning Group > Inorganic Chemistry Lab > University of Oxford > > ------------------------------------------------ > Amanda Plimmer > Lincoln College > Turl St > Oxford > OX1 3DR > > 07899 988238 > internal ext. 20979 > > _________________________________________________________________ > MSN Photos is the easiest way to share and print your photos: > http://photos.msn.com/support/worldwide.aspx > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From iog@inbox.ru Thu Mar 21 10:51:58 2002 From: iog@inbox.ru (iog) Date: Thu, 21 Mar 2002 13:51:58 +0300 Subject: [mems-talk] MEMS die post-processing... Message-ID: Hi! Can anybody give me information on service that provides laser cutting of MEMS dies? I need to cut smaller die out of 3*3 mm MEMS die. The MEMS stack is 0.5 mm Si wafer and 0.5 mm anodically bonded glass. Thank you, Igor From m_aslammalik@yahoo.com Thu Mar 21 14:58:24 2002 From: m_aslammalik@yahoo.com (aslam muhammad) Date: Thu, 21 Mar 2002 06:58:24 -0800 (PST) Subject: [mems-talk] TMAH Etching Message-ID: <20020321145824.45560.qmail@web10807.mail.yahoo.com> Dear friends I am trying micromaching of silicon <100> wafer, 525 micron thick and 7 micron EPI layer (Ar) using TMAH 25%. After 8 hours, the etching becomes so slow that it hardly etch the wafer to the oxide layer grown on silicon wafer. If I try etching from EPI layer, polished side, initially it etches with its actual etch rate,i.e. 1 micron/minute but when wafer thickness remains about 15-20 microns, the etching becomes almost negligible. Now If I start etching from the unpolished side of wafer, the same problems occures on the other side i.e. it stops etching the remaining 15-20 micron silicon layer. I can not understand what is happening. Is it solution weekness or something ? i don't know. Can somebody help me please. M. Aslam m_aslammalik@yahoo.com Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ From michael.martin@louisville.edu Thu Mar 21 17:26:02 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Thu, 21 Mar 2002 12:26:02 -0500 Subject: [mems-talk] TMAH Etching Message-ID: Aslam, I have recently had the same problem. I have yet to fix the problem but the next thing I intend to try is simply increasing the volume. -I'll let you know Mike >>> m_aslammalik@yahoo.com 03/21/02 06:58AM >>> Dear friends I am trying micromaching of silicon <100> wafer, 525 micron thick and 7 micron EPI layer (Ar) using TMAH 25%. After 8 hours, the etching becomes so slow that it hardly etch the wafer to the oxide layer grown on silicon wafer. If I try etching from EPI layer, polished side, initially it etches with its actual etch rate,i.e. 1 micron/minute but when wafer thickness remains about 15-20 microns, the etching becomes almost negligible. Now If I start etching from the unpolished side of wafer, the same problems occures on the other side i.e. it stops etching the remaining 15-20 micron silicon layer. I can not understand what is happening. Is it solution weekness or something ? i don't know. Can somebody help me please. M. Aslam m_aslammalik@yahoo.com Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From michael.martin@louisville.edu Thu Mar 21 17:27:37 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Thu, 21 Mar 2002 12:27:37 -0500 Subject: [mems-talk] MEMS die post-processing... Message-ID: http://www.jpsalaser.com or http://www.resonetics.com -Mike >>> iog@inbox.ru 03/21/02 02:51AM >>> Hi! Can anybody give me information on service that provides laser cutting of MEMS dies? I need to cut smaller die out of 3*3 mm MEMS die. The MEMS stack is 0.5 mm Si wafer and 0.5 mm anodically bonded glass. Thank you, Igor _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From ilseok_son@hotmail.com Thu Mar 21 17:31:05 2002 From: ilseok_son@hotmail.com (il-seok Son) Date: Thu, 21 Mar 2002 11:31:05 -0600 Subject: [mems-talk] Stero lithography service. References: Message-ID: Dear mems-talk users, I would like to make a 3-D structure prototype with stereo lithography. Please, let me know who can provide this service. I don't need high resolution at this time. Thanks in advance. __________________________________________________________ Il-seok Son (Sunny) Home) 608-238-3029 Dept. of Electrical and Computer Engineering University of Wisconsin - Madison Sonic MEMS __________________________________________________________ From John.Vig@mail1.monmouth.army.mil Thu Mar 21 17:36:53 2002 From: John.Vig@mail1.monmouth.army.mil (Vig, John Dr CECOM RDEC C2D) Date: Thu, 21 Mar 2002 12:36:53 -0500 Subject: [mems-talk] RE: mems-talk digest, Vol 1 #230 - 12 msgs Message-ID: Re: [mems-talk] single crystalline quartz micromachining, March 21, 2002 Gary, you may find tutorials, books, and hundreds of papers on single crystal quartz processing in the digital archive at the IEEE Ultrasonics, Ferroelectrics, and Frequency Control website www.ieee-uffc.org/fc Some of it is available to everyone, but, most is available to IEEE UFFC-S members only. ...............John Vig. --------------------------------- Message: 4 Date: Wed, 20 Mar 2002 14:26:05 -0500 To: mems-talk@memsnet.org From: Gary Bernstein Subject: [mems-talk] single crystalline quartz micromachining Reply-To: mems-talk@memsnet.org Hello, Can anyone give me some basic references on the micromachining of single crystalline quartz? The closer to a tutorial on the materials and basic processing the better. Thanks very much, Gary H. Bernstein University of Notre Dame bernstein.1@nd.edu ______________________________________________________________ Gary H. Bernstein (219) 631-6269 (office) Professor and Associate Chair (219) 631-4393 (fax) Department of Elec. Eng. (219) 277-0752 (home) 275 Fitzpatrick Hall University of Notre Dame Notre Dame, IN 46556 gary.h.bernstein.1@nd.edu See webpages at http://www.nd.edu/~micro/ http://www.nd.edu/~gbernste/ _______________________________________________________________ From HenslerRL@aol.com Thu Mar 21 17:38:48 2002 From: HenslerRL@aol.com (HenslerRL@aol.com) Date: Thu, 21 Mar 2002 12:38:48 EST Subject: [mems-talk] ultra-small hot film/wire anemometer Message-ID: <91.1a233dda.29cb74a8@aol.com> Has anyone constructed a working prototype of a thin film/wire anememometer capable of measuring the flow velocity of water in a 1 mm diameter tube with a response time in the 100 micro-second range?. Ralph Hensler R. L Hensler Associates 212-369-1003 From lshelley@micrometrics.com Thu Mar 21 19:37:07 2002 From: lshelley@micrometrics.com (Liz Shelley) Date: Thu, 21 Mar 2002 14:37:07 -0500 Subject: [mems-talk] Plating on stainles steel Message-ID: Hello Does anyone know how I would go about plating a nickel corrosion coat on stainless (to be used as a probe)? I've heard that I must plate with copper first and then nickel. Any information or source of information will be greatly appreciated. Liz From rjohnsto@cs.sfu.ca Thu Mar 21 22:10:44 2002 From: rjohnsto@cs.sfu.ca (Robert Johnstone) Date: Thu, 21 Mar 2002 14:10:44 -0800 (PST) Subject: [mems-talk] Clean room equipment Message-ID: <200203212210.g2LMAio6004109@cs.sfu.ca> Hello Everyone, I'm interested in starting a new clean-room from scratch. Since we have a very good idea of the processes we want to run, I decided to collect information about the necessary equipment online. However, it turns out that most suppliers are very closed-mouthed about the equipment. I understand there aren't going to quote prices, but I at least want comprehensive information about floor space and required support services (air, vacuum, power, etc.). Could someone please point me to a good source for this information? Thank-you, ---------------------------------------- Robert Johnstone Simon Fraser University http://www.sfu.ca/~rjohnsto/ From jxiao@genospectra.com Thu Mar 21 22:22:17 2002 From: jxiao@genospectra.com (Jianming Xiao) Date: Thu, 21 Mar 2002 14:22:17 -0800 Subject: [mems-talk] Looking for microfluidics prototyping services Message-ID: <005301c1d126$dc656700$0214a8c0@jxiaolt> We are looking for a company to do prototyping on a microfluidics device. The device has two glass layers those are fused together. On the surface of one of the pieces, 20-30 um deep channels are etched (can use wet etch). I really appreciate that anyone can give me contact information for a company who does this. Thanks. Jianming Xiao Principal Engineer Genospectra Inc. 6519 Dumbarton Circle Fremont, CA 94555 tel (510) 818-2647 fax (510) 793-8399 From frank_berauer@hp.com Fri Mar 22 02:40:25 2002 From: frank_berauer@hp.com (BERAUER,FRANK (HP-Singapore,ex7)) Date: Fri, 22 Mar 2002 10:40:25 +0800 Subject: [mems-talk] Plating on stainles steel Message-ID: <2CFFECBFFEEEAF4DB4B2EB9BD47A736639967B@xsg07.sgp.hp.com> Ni does not adhere well to stainless steel. It peels off easily, a fact we use to prepare standalone Ni sheets - the underlying SS layer can be reused for many re-platings and peelings. Greetings, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore -----Original Message----- From: Liz Shelley [mailto:lshelley@micrometrics.com] Sent: Friday, March 22, 2002 3:37 AM To: mems-talk@memsnet.org Subject: [mems-talk] Plating on stainles steel Hello Does anyone know how I would go about plating a nickel corrosion coat on stainless (to be used as a probe)? I've heard that I must plate with copper first and then nickel. Any information or source of information will be greatly appreciated. Liz _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From Niels.Olij@Alcatel-optronics.nl Fri Mar 22 08:03:13 2002 From: Niels.Olij@Alcatel-optronics.nl (Niels Olij) Date: Fri, 22 Mar 2002 09:03:13 +0100 Subject: [mems-talk] CAD tool for Grey Scale Mask making Message-ID: <696DAA9CDF1DD511982000508BAEC5743CFB49@enschedemail.aonl> Hi Sofina, To my best knowledge it is not in any MEMS program. Most important reason I think is that it is not supported by the machines that make the masks, and the languages that are used to decribe masks (GDS, CIF). The solution would be to devide every structure into tiny dots and then export to GDS but that would explode the file size ! Niels Olij Alcatel Optronics Netherlands hi mems-talk members ! did someone knows any CAD (computer aided design) tool to make a grey scale mask (also called half tone mask), for lithography applications and micromachining ? In fact, I could get access to L-Edit, Mems Pro, Intellisuite and may be MemsExpert (from Coventor) softwares. And I am wondering if there is any kind of option provided in these tools, which allow me to make this kind of gradually toned masks. If not is there any other design tool, which could help in tmatter ? Thank you everybody for your help. Sofiane From jeff.frye@motorola.com Fri Mar 22 13:08:16 2002 From: jeff.frye@motorola.com (Frye Jeffrey-G11523) Date: Fri, 22 Mar 2002 07:08:16 -0600 Subject: [mems-talk] MEMS die post-processing... Message-ID: <9F6003E586D8D511902B0002B328BB6915196A@il08exm30.corp.mot.c om> Check out this company. Good luck. http://www.ptgindustries.com/default.htm -----Original Message----- From: iog [mailto:iog@inbox.ru] Sent: Thursday, March 21, 2002 4:52 AM To: mems-talk@memsnet.org Subject: [mems-talk] MEMS die post-processing... Hi! Can anybody give me information on service that provides laser cutting of MEMS dies? I need to cut smaller die out of 3*3 mm MEMS die. The MEMS stack is 0.5 mm Si wafer and 0.5 mm anodically bonded glass. Thank you, Igor _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From michael.martin@louisville.edu Fri Mar 22 14:58:30 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Fri, 22 Mar 2002 09:58:30 -0500 Subject: [mems-talk] Lift off with negative resist? Message-ID: Does anyone know of a resist/ technique that will allow me to do lift-off with a negative resist? Thanks in advance, Mike From abdulgz@yahoo.com Fri Mar 22 14:03:10 2002 From: abdulgz@yahoo.com (abdul ganni) Date: Fri, 22 Mar 2002 06:03:10 -0800 (PST) Subject: [mems-talk] High Tech Learning/Low cost tool-MEMS/MICRO DEVICES Message-ID: <20020322140310.37671.qmail@web20804.mail.yahoo.com> Hi: Does anybody out there has a need for such a tool??? MODU-LAB, Low cost tool for high tech learning, IN THE FIELD OF SOLID STATE DEVICES/MEMS AND MICROCHIP FABRICATION. This is very useful for training under graduate students and technicians. Following is our web site: www.modu-lab.org I will like to INVITE you to visit our WEB SITE. Thank you...Regards. Ganni. V.P. Modu-Lab abdulgz@yahoo.com 724 348 8231 Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ From mac.mcreynolds@calipertech.com Fri Mar 22 15:19:35 2002 From: mac.mcreynolds@calipertech.com (Mac McReynolds) Date: Fri, 22 Mar 2002 07:19:35 -0800 Subject: [mems-talk] Lift off with negative resist? Message-ID: nLOF2020, 35, and 70 (2, 3.5 and 75 thick respectively) are a negative lift off resist series available from Clariant Mac McReynolds R&D Manager Caliper Technologies Corp. 605 Fairchild Drive Mountain View, CA 94043-2234 Tel: 650-623-0710 Fax: 650-623-0521 > ---------- > From: Michael D Martin > Reply To: mems-talk@memsnet.org > Sent: Friday, March 22, 2002 6:58 AM > To: mems-talk@memsnet.org > Subject: [mems-talk] Lift off with negative resist? > > Does anyone know of a resist/ technique that will allow me to do > lift-off with a negative resist? > > > Thanks in advance, > Mike > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From BobHendu@aol.com Fri Mar 22 15:36:26 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Fri, 22 Mar 2002 10:36:26 EST Subject: [mems-talk] Clean room equipment Message-ID: <107.ef25046.29cca97a@aol.com> Robert: You can contact me direct at 480-558-1156 and I will try to provide you with the information you are looking for. Bob Henderson From GREGOR.OCVIRK@Roche.COM Fri Mar 22 16:15:07 2002 From: GREGOR.OCVIRK@Roche.COM (Ocvirk, Gregor {DD-T~Mannheim}) Date: Fri, 22 Mar 2002 17:15:07 +0100 Subject: AW: [mems-talk] Looking for microfluidics prototyping services Message-ID: <18E61A3C3B16D511BF3F0090276123FE0AD234@rm2msem5.mah.roche.c om> Jianming, I4d contact Micralyne (www.micralyne.com) for prototyping of microfluidic devices made out of glass. Micralyne Inc. 1911 - 94 Street Edmonton, Alberta T6N 1E6 Canada Telephone: 780-431-4400 Fax: 780-431-4422 Hope this helps, Best regards Gregor Ocvirk, Ph.D. Roche Diagnostics GmbH Diabetes Care Technology Development, DD-T3 Sandhoferstr. 116 68305 Mannheim phone: xx49 621 759 9751 fax: xx49 621 759 8673 -----Urspr|ngliche Nachricht----- Von: Jianming Xiao [mailto:jxiao@genospectra.com] Gesendet am: Thursday, March 21, 2002 11:22 PM An: mems-talk@memsnet.org Betreff: [mems-talk] Looking for microfluidics prototyping services We are looking for a company to do prototyping on a microfluidics device. The device has two glass layers those are fused together. On the surface of one of the pieces, 20-30 um deep channels are etched (can use wet etch). I really appreciate that anyone can give me contact information for a company who does this. Thanks. Jianming Xiao Principal Engineer Genospectra Inc. 6519 Dumbarton Circle Fremont, CA 94555 tel (510) 818-2647 fax (510) 793-8399 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From michael.martin@louisville.edu Fri Mar 22 16:32:17 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Fri, 22 Mar 2002 11:32:17 -0500 Subject: [mems-talk] CAD tool for Grey Scale Mask making Message-ID: I understand that those few exposure tools that support it (e.g. Heidelberg DWL66 Laser Pattern Generator), treat different gray scales as different layers in your design package. So use multiple layers. -Mike >>> Niels.Olij@Alcatel-optronics.nl 03/22/02 12:03AM >>> Hi Sofina, To my best knowledge it is not in any MEMS program. Most important reason I think is that it is not supported by the machines that make the masks, and the languages that are used to decribe masks (GDS, CIF). The solution would be to devide every structure into tiny dots and then export to GDS but that would explode the file size ! Niels Olij Alcatel Optronics Netherlands hi mems-talk members ! did someone knows any CAD (computer aided design) tool to make a grey scale mask (also called half tone mask), for lithography applications and micromachining ? In fact, I could get access to L-Edit, Mems Pro, Intellisuite and may be MemsExpert (from Coventor) softwares. And I am wondering if there is any kind of option provided in these tools, which allow me to make this kind of gradually toned masks. If not is there any other design tool, which could help in tmatter ? Thank you everybody for your help. Sofiane _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From John.Somerville@techprt.co.uk Fri Mar 22 17:09:35 2002 From: John.Somerville@techprt.co.uk (John Somerville) Date: Fri, 22 Mar 2002 17:09:35 +0000 Subject: [mems-talk] Plating on stainles steel In-Reply-To: <2CFFECBFFEEEAF4DB4B2EB9BD47A736639967B@xsg07.sgp.hp.com> Message-ID: <5.1.0.14.0.20020322170814.00ae2980@mailhost> tecan.co.uk have helped us with this previously they have a process for generating a nickel seed layer which will attach. I'm sure they are others if you are in the US John From jsh021@latech.edu Fri Mar 22 17:32:09 2002 From: jsh021@latech.edu (Javeed Shaikh Mohammed) Date: Fri, 22 Mar 2002 11:32:09 -0600 Subject: [mems-talk] low stress ( tensile) "LPCVD silicon-nitride" Message-ID: <1016818329.3c9b6a990a479@webmail.LaTech.edu> Hello everyone, In my fabrication process, I will need to deposit a "LPCVD silicon-nitride" layer with a tensile stress of ~ 100 MPa. Does any one have the "Process parameters" for this process. regards, javeed shaikh mohammed. ------------------------------------------------- This mail sent through IMP: http://horde.org/imp/ From kaustubhbhate@yahoo.com Fri Mar 22 17:39:32 2002 From: kaustubhbhate@yahoo.com (kaustubh bhate) Date: Fri, 22 Mar 2002 09:39:32 -0800 (PST) Subject: [mems-talk] cantilever beams Message-ID: <20020322173932.40538.qmail@web14510.mail.yahoo.com> Hi, We are trying to develop a release protocol for MEMS structures,here at NC State University. We are looking for simple cantilever beam structures for this purpose,which can be electrically tested after they have been released. Does anybody know of a vendor who can provide us with unreleased cantilever beams for our studies? Thanking You. Sincerely, Kaustubh Bhate. ===== Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ From BMoffat@yieldengineering.com Fri Mar 22 17:52:36 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Fri, 22 Mar 2002 09:52:36 -0800 Subject: [mems-talk] Lift off with negative resist? Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC12CDEA@exchange.yield.yield engineering.com> Michael, Metal lift off with positive resist but a negative resist mask is done using an ammonia technique that neutralizes the exposed resist and flood exposure allows the resist that was originally unexposed to be developed away. This is a mature process and can be done down to 800 Angstrom lines and spaces and with up to 40 micron resist thickness. These are only results that have been attained to date and are by no means the limits. There are numerous papers on this technique. If you need further information on this let me know, it lets you do lift off using the masks for negative resist, as a common start is to reverse the field of the mask to start with positive resist. Bill Moffat -----Original Message----- From: Michael D Martin [mailto:michael.martin@louisville.edu] Sent: Friday, March 22, 2002 6:59 AM To: mems-talk@memsnet.org Subject: [mems-talk] Lift off with negative resist? Does anyone know of a resist/ technique that will allow me to do lift-off with a negative resist? Thanks in advance, Mike _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From mary-ann.maher@memscap.com Fri Mar 22 18:26:15 2002 From: mary-ann.maher@memscap.com (Mary-ann Maher) Date: Fri, 22 Mar 2002 10:26:15 -0800 Subject: [mems-talk] CAD tool for Grey Scale Mask making References: <20020320111503.97324.qmail@web13404.mail.yahoo.com> Message-ID: <3C9B7747.B14A2252@memscap.com> Hi Sou Zou- Through the user programmable interface in MEMS Pro you can output grey scale masks. If you would like to contact me at MEMSCAP, I can give you more details. My contact info is 510 444 5269 and my e-mail is mary-ann.maher@memscap.com. Regards, Mary Ann sou zou wrote: > hi mems-talk members ! > > did someone knows any CAD (computer aided design) tool to make a grey scale mask (also called half tone mask), for lithography applications and micromachining ? In fact, I could get access to L-Edit, Mems Pro, Intellisuite and may be MemsExpert (from Coventor) softwares. And I am wondering if there is any kind of option provided in these tools, which allow me to make this kind of gradually toned masks. If not is there any other design tool, which could help in that matter ? > > Thank you everybody for your help. > > Sofiane > > --------------------------------- > Yahoo! Mail -- Une adresse @yahoo.fr gratuite et en frangais ! > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From BMoffat@yieldengineering.com Fri Mar 22 18:03:37 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Fri, 22 Mar 2002 10:03:37 -0800 Subject: [mems-talk] Clean room equipment Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC12CDEB@exchange.yield.yield engineering.com> Robert, My company builds vacuum vapor primers for photo resist adhesion, Image reversal equipment for lift off, silylation equipment for implanting silicon in exposed areas, Plasma equipment for descum and strip of resist and Polymide type organics. Plus Polymide bake ovens. We are not shy about revealing any of our specifications or prices. What do you need to know? Bill Moffat -----Original Message----- From: Robert Johnstone [mailto:rjohnsto@cs.sfu.ca] Sent: Thursday, March 21, 2002 2:11 PM To: mems-talk@memsnet.org Subject: [mems-talk] Clean room equipment Hello Everyone, I'm interested in starting a new clean-room from scratch. Since we have a very good idea of the processes we want to run, I decided to collect information about the necessary equipment online. However, it turns out that most suppliers are very closed-mouthed about the equipment. I understand there aren't going to quote prices, but I at least want comprehensive information about floor space and required support services (air, vacuum, power, etc.). Could someone please point me to a good source for this information? Thank-you, ---------------------------------------- Robert Johnstone Simon Fraser University http://www.sfu.ca/~rjohnsto/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From BMoffat@yieldengineering.com Fri Mar 22 18:08:21 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Fri, 22 Mar 2002 10:08:21 -0800 Subject: [mems-talk] Plating on stainless steel Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC12CDEC@exchange.yield.yield engineering.com> Liz, Don't know but I do know that any surface treated with a plasma has a better chance of adhesion. I would suggest a plasma gas that contains Hydrogen to reduce any oxide on the surface then a fast run to the plating shop. I do not know where you are geographically but my company manufactures plasma equipment and we would be happy to run a sample for you. Bill Moffat. P.S. we are in San Jose, Silicon Valley. -----Original Message----- From: Liz Shelley [mailto:lshelley@micrometrics.com] Sent: Thursday, March 21, 2002 11:37 AM To: mems-talk@memsnet.org Subject: [mems-talk] Plating on stainles steel Hello Does anyone know how I would go about plating a nickel corrosion coat on stainless (to be used as a probe)? I've heard that I must plate with copper first and then nickel. Any information or source of information will be greatly appreciated. Liz _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From BMoffat@yieldengineering.com Fri Mar 22 18:52:54 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Fri, 22 Mar 2002 10:52:54 -0800 Subject: [mems-talk] Need info @ design of torsional micro-mirror (similar to TI DLPelement) Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC12CDF1@exchange.yield.yield engineering.com> Amin, If you are contemplating manufacture of a torsional mirror device my company supplied T.I. with equipment to help produce them. I would be happy to send you details. Bill Moffat -----Original Message----- From: Amin Abdul-Fattah [mailto:aminalimari@rogers.com] Sent: Tuesday, March 19, 2002 10:31 AM To: mems-talk@memsnet.org Subject: [mems-talk] Need info @ design of torsional micro-mirror (similar to TI DLPelement) Hi, I am looking for the general equations that govern the design of torsional micro-mirror similar to an element in the TI DLP. Thanks for your assistance. Amin Imari _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From rwilliston@bigbangwidth.com Fri Mar 22 18:57:19 2002 From: rwilliston@bigbangwidth.com (Rick Williston) Date: Fri, 22 Mar 2002 11:57:19 -0700 Subject: [mems-talk] low stress ( tensile) "LPCVD silicon-nitride" In-Reply-To: <1016818329.3c9b6a990a479@webmail.LaTech.edu> Message-ID: <00bf01c1d1d3$64c5bdf0$730aa8c0@D5K2RF01> From monte@innovativemicrotech.com Fri Mar 22 18:57:00 2002 From: monte@innovativemicrotech.com (Heaton, Monte) Date: Fri, 22 Mar 2002 10:57:00 -0800 Subject: [mems-talk] Cantilevers Message-ID: Sun: Cantilevers of various types are available from Veeco at 805-967-2700. Monteith G. Heaton VP Marketing and Sales Innovative Micro Technology 75 Robin Hill Road * Santa Barbara, CA 93117 Ph: 805-681-2852 * Fx: 805-967-2677 info@imtmems.com * www.imtmems.com _________________________________________ "Your strategic partner for MEMS design and 6" wafer manufacturing services with 0.355m photolithography, 30,000 sq. ft. fab, and non-CMOS materials flexibility, including metals/magnetics." Message: 3 Date: Tue, 19 Mar 2002 16:24:00 -0600 To: mems-talk@memsnet.org From: Sun Yu Subject: [mems-talk] cantilevers Reply-To: mems-talk@memsnet.org We are interested in purchasing some cantilevers with a stiffness of 10N/m to 30N/m. It does not have to be piezoresistive or anything like that, just Si structures. Any information is appreciated. Regards, Sun From adam@wengrow.com Fri Mar 22 19:15:56 2002 From: adam@wengrow.com (Adam Wengrow) Date: Fri, 22 Mar 2002 11:15:56 -0800 Subject: [mems-talk] RE: Looking for microfluidics prototyping services In-Reply-To: Message-ID: Hi Jianming, Try Norsam Technologies (norsam.com), Alphatechnologies (alphat.com), or even a generic MEMS house like Standard MEMS (stmems.com) or Applied MEMS (appliedmems.cc). Any of them should be able to handle patterning glass, wet etch, and fusion bonding for a prototype. Let me know if they're not able to and I'll give you a couple more places. Adam Wengrow -----Original Message----- From: "Jianming Xiao" To: Date: Thu, 21 Mar 2002 14:22:17 -0800 Subject: [mems-talk] Looking for microfluidics prototyping services Reply-To: mems-talk@memsnet.org We are looking for a company to do prototyping on a microfluidics device. The device has two glass layers those are fused together. On the surface of one of the pieces, 20-30 um deep channels are etched (can use wet etch). I really appreciate that anyone can give me contact information for a company who does this. Thanks. Jianming Xiao Principal Engineer Genospectra Inc. 6519 Dumbarton Circle Fremont, CA 94555 tel (510) 818-2647 fax (510) 793-8399 --__--__-- From beall@boulder.nist.gov Fri Mar 22 19:20:21 2002 From: beall@boulder.nist.gov (Jim Beall) Date: Fri, 22 Mar 2002 12:20:21 -0700 Subject: [mems-talk] low stress ( tensile) "LPCVD silicon-nitride" In-Reply-To: <1016818329.3c9b6a990a479@webmail.LaTech.edu> References: <1016818329.3c9b6a990a479@webmail.LaTech.edu> Message-ID: Javeed - Our process is: 6" LPCVD tube furnace 835 deg. C 100 SCCM dichlorosilane 17 SCCM ammonia 250 mT ~ 250 nm in 45 min. Yields very low stress SiNx, index ~ 2.3 Let me know if you need more information. Jim > >In my fabrication process, I will need to deposit a "LPCVD silicon-nitride" >layer with a tensile stress of ~ 100 MPa. Does any one have the "Process >parameters" for this process. -- - Jim Beall 303-497-5989 beall@boulder.nist.gov From BMoffat@yieldengineering.com Fri Mar 22 19:32:54 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Fri, 22 Mar 2002 11:32:54 -0800 Subject: [mems-talk] Changing PDMS surface from hydrophobic into hydrophilic Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC12CDF2@exchange.yield.yield engineering.com> any plasma treatment should render the surface hydrophilic. This means you can plasma treat with inert gas, say argon and not etch to much of the original material but create a hydrophilic surface. Bill Moffat -----Original Message----- From: Xinyu Li [mailto:x.li@bioprocessors.com] Sent: Wednesday, March 20, 2002 1:14 PM To: mems-talk@memsnet.org Subject: [mems-talk] Changing PDMS surface from hydrophobic into hydrophilic Dear colleagues, Besides using oxygen plasma treat PDMS surface, are there any other ways to change it from hydrophobic into hydrophilic? Thanks. Xinyu Li, PhD Senior Scientist Bioprocessors 35-C Cabot Road Woburn, MA 01801 Tel: (781)935-1400 ext. 18 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From jeffyee@ee.ucla.edu Fri Mar 22 22:38:45 2002 From: jeffyee@ee.ucla.edu (Jeff Yee) Date: Fri, 22 Mar 2002 14:38:45 -0800 Subject: [mems-talk] Will Phosphoric Acid etch Nickel Message-ID: Hi, I was wondering if anyone knew if phosphoric acid will etch nickel, and if so what is its etch rate. Thanks for any information you can provide me, Jeff Yee jeffyee@ee.ucla.edu From jxiao@genospectra.com Fri Mar 22 23:50:29 2002 From: jxiao@genospectra.com (Jianming Xiao) Date: Fri, 22 Mar 2002 15:50:29 -0800 Subject: [mems-talk] RE: Looking for microfluidics prototyping services References: Message-ID: <00ff01c1d1fc$58e7e200$0214a8c0@jxiaolt> Thank you very much for the information. I'll call them up to find out weather they can help me. Jianming ----- Original Message ----- From: "Adam Wengrow" To: Sent: Friday, March 22, 2002 11:15 AM Subject: [mems-talk] RE: Looking for microfluidics prototyping services > Hi Jianming, > > Try Norsam Technologies (norsam.com), Alphatechnologies (alphat.com), or > even a generic MEMS house like Standard MEMS (stmems.com) or Applied MEMS > (appliedmems.cc). Any of them should be able to handle patterning glass, > wet etch, and fusion bonding for a prototype. Let me know if they're not > able to and I'll give you a couple more places. > > Adam Wengrow > > -----Original Message----- > From: "Jianming Xiao" > To: > Date: Thu, 21 Mar 2002 14:22:17 -0800 > Subject: [mems-talk] Looking for microfluidics prototyping services > Reply-To: mems-talk@memsnet.org > > We are looking for a company to do prototyping on a microfluidics device. > The > device has two glass layers those are fused together. On the surface of one > of the pieces, 20-30 um deep channels are etched (can use wet etch). I > really > appreciate that anyone can give me contact information for a company who > does > this. Thanks. > > Jianming Xiao > Principal Engineer > Genospectra Inc. > 6519 Dumbarton Circle > Fremont, CA 94555 > tel (510) 818-2647 > fax (510) 793-8399 > > --__--__-- > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From abhush@yahoo.com Sat Mar 23 00:58:43 2002 From: abhush@yahoo.com (Abhinav Bhushan) Date: Fri, 22 Mar 2002 16:58:43 -0800 (PST) Subject: [mems-talk] Plating on stainles steel In-Reply-To: Message-ID: <20020323005843.69457.qmail@web13801.mail.yahoo.com> The C-12 activator may work http://www.pumachemical.com/c12.html Abhinav --- Liz Shelley wrote: > Hello > Does anyone know how I would go about plating a > nickel corrosion coat on > stainless (to be used as a probe)? > I've heard that I must plate with copper first and > then nickel. > Any information or source of information will be > greatly appreciated. > Liz Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ From veeramani_subramanian@hp.com Sat Mar 23 03:44:13 2002 From: veeramani_subramanian@hp.com (SUBRAMANIAN,VEERAMANI (HP-Singapore,ex5)) Date: Sat, 23 Mar 2002 11:44:13 +0800 Subject: [mems-talk] SU8 series resist compatiblity Message-ID: Hi I noted the problems with material intermixing and incompatibilities in my process. Basically, the solvent of SU-8 2 seems to attack and dissolve the hard baked positive photoresists (AZ9260) which I use as a wax. Would appreciate if any one of you can suggest how to prevent such intermix. You may also list the positive and negative photoresit which is compatible with SU8 series of resists. Thanks, Mani Hewlett-Packard Singapore (Pte) Ltd From zhuxiaorui@online.cq.cn Sun Mar 24 08:36:37 2002 From: zhuxiaorui@online.cq.cn (zhuxiaorui) Date: Sun, 24 Mar 2002 16:36:37 +0800 Subject: [mems-talk] TMAH Etching Message-ID: <0GTG00K2KYEBZV@mta3.cta.cq.cn> Hi,Aslam I experimented with TMAH etching last year. The same problem appeared at that time. As the silicon wafer was etched, more pyramidal hillocks were found on the surface. They not only affect the roughness of the etched surface, but also prevent the following etching. The etching seems to be negligible when hillocks become more and more. The available solutions are to increase the etching temperature, add some strong oxidizers and lower the solution concentration of TMAH water. In addition, please note that first, the solution has to be stirred magnetically during the etching; secondly, TMAH solution tends to volatile. At last I think too long etching time is not suitable for TMAH solution. Maybe you alternate another kind of etchants. Good luck Zhu Xiaorui China,People's Republic zhuxiaorui zhuxiaorui@public.cta.cq.cn From Sami.Rifai@bain.com Sun Mar 24 16:02:29 2002 From: Sami.Rifai@bain.com (Rifai, Sami) Date: Sun, 24 Mar 2002 17:02:29 +0100 Subject: [mems-talk] Etching Message-ID: Hi all, I am trying to identify eteching equipment manufacturers. I understand Alcatel vacuum is one. Is that right? Who are the other manufacturers? Thanks Sami From kamakal2000@yahoo.com Sun Mar 24 21:48:54 2002 From: kamakal2000@yahoo.com (Samrat Mukherjee) Date: Sun, 24 Mar 2002 13:48:54 -0800 (PST) Subject: [mems-talk] Tantalum Message-ID: <20020324214854.51564.qmail@web21305.mail.yahoo.com> Hi , Could any one give me some information about Tantulum. I would like to know the following. 1: How do you pattern Tantalum? I know that you can use HF:HNO3=1:1 to etch Ta, but what can you use to protect the region that you donot want to etch. 2: What are the sputtering conditions in which you can get very low stress Ta-film that is 1 micron thick. The Ta is being sputtered on Palladium. Also, I cannot heat the substrate above 600 degree C. Thanks, Samrat Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ From martin.dekegelaer.md@belgium.agfa.com Mon Mar 25 09:49:52 2002 From: martin.dekegelaer.md@belgium.agfa.com (Martin De_Kegelaer) Date: Mon, 25 Mar 2002 10:49:52 +0100 Subject: [mems-talk] SiOC coating Message-ID: Dear Mems specialists, Does anyone knows who can coat SiOC on a polyimid substrate for us? Thank you and best regards, Martin De Kegelaer AGFA-GEVAERT N.V. From bad_addy@yahoo.com Mon Mar 25 13:05:52 2002 From: bad_addy@yahoo.com (adnan merhaba) Date: Mon, 25 Mar 2002 05:05:52 -0800 (PST) Subject: [mems-talk] Tantalum In-Reply-To: <20020324214854.51564.qmail@web21305.mail.yahoo.com> Message-ID: <20020325130552.60360.qmail@web11205.mail.yahoo.com> hello samrat, you can use positive 1818 resist which will hold up during your tantalum etching. tantalum is a relatively easy material to sputter, but 1 micron may take you a significant time. We use DC magnetron sputtering using 0.7 KW power (guess shuld be good for your temperature condition) and 14mTorr of Ar gas (no bias), and it gives us a pretty uniform low stress Ta film. Just curious, what is the intended purpose of your Ta film? Regards, Adnan Merhaba --- Samrat Mukherjee wrote: > Hi , > Could any one give me some information about > Tantulum. I would like to know the following. > > 1: How do you pattern Tantalum? I know that you can > use HF:HNO3=1:1 to etch Ta, but what can you use to > protect the region that you donot want to etch. > > 2: What are the sputtering conditions in which you > can > get very low stress Ta-film that is 1 micron thick. > The Ta is being sputtered on Palladium. Also, I > cannot heat the substrate above 600 degree C. > > Thanks, > > Samrat > Yahoo! Movies - coverage of the 74th Academy Awards. > http://movies.yahoo.com/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe > or change your list > options, visit > http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS > processing services. > Visit us at http://www.mems-exchange.org/ Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ From BobHendu@aol.com Mon Mar 25 15:40:54 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Mon, 25 Mar 2002 10:40:54 EST Subject: [mems-talk] Etching Message-ID: <138.b94e2a3.29d09f06@aol.com> Try Aspect Systems in Arizona. They manufacture a variety of etch tool originally manufactured by Lam Research Corporation. They also have a new deep silicon etch tool that will rival the STS tools for MEMS applications. Their phone is 480-892-7020 and ask for Doug Dixon the owner. From aminalimari@rogers.com Mon Mar 25 15:47:56 2002 From: aminalimari@rogers.com (Amin Abdul-Fattah) Date: Mon, 25 Mar 2002 10:47:56 -0500 Subject: [mems-talk] Thermopile design Message-ID: <001801c1d414$6ebb7d20$7ace6618@rchrd.phub.net.cable.rogers. com> Thermopile design Could you pls. send my the relation between the number of strips, the total resistance, the sheet resistance, and the total length and width of the structure. (Neglect separation between silicon strips) Also what is the sensitivity of the thermopile? waiting yr reply. Thanks and regards Amin Imari From H.Luesebrink@RI.EVGroup.com Mon Mar 25 16:14:46 2002 From: H.Luesebrink@RI.EVGroup.com (Luesebrink Helge) Date: Mon, 25 Mar 2002 11:14:46 -0500 Subject: [mems-talk] Clean room equipment Message-ID: Robert, Please check out our Web site www.evgroup.com regarding mask/bond aligners and wafer bonding equipment. We do provide comprehensive information upon request by e-mail. Best regards, Helge -----Original Message----- From: Robert Johnstone [mailto:rjohnsto@cs.sfu.ca] Sent: Thursday, March 21, 2002 5:11 PM To: mems-talk@memsnet.org Subject: [mems-talk] Clean room equipment Hello Everyone, I'm interested in starting a new clean-room from scratch. Since we have a very good idea of the processes we want to run, I decided to collect information about the necessary equipment online. However, it turns out that most suppliers are very closed-mouthed about the equipment. I understand there aren't going to quote prices, but I at least want comprehensive information about floor space and required support services (air, vacuum, power, etc.). Could someone please point me to a good source for this information? Thank-you, ---------------------------------------- Robert Johnstone Simon Fraser University http://www.sfu.ca/~rjohnsto/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From BMoffat@yieldengineering.com Mon Mar 25 16:33:55 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Mon, 25 Mar 2002 08:33:55 -0800 Subject: [mems-talk] SiOC coating Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC12CDF6@exchange.yield.yield engineering.com> Martin, It may be possible to use silylation. If you use a Photo sensitive Polymide and expose it you will get an indene carbo-oxylic acid where you expose. Then if you put it in a higher than normal pressure HMDS primer the silane will react with the acid and leave behind a Si(CH3)3 in the exposed area. Then treat with a low pressure Oxygen plasma it will oxidize the Silicon. This is a standard process in deep U.V. exposure areas. I can implant the Si(CH3)3 in one of my silylation units the plasma may be tricky. It needs to be low pressure, below 10 Torr, and that usually says expense, The Applied Materials 5000 is an example at about $1,000,000.00. The Silylation unit is as low as $50,000.00. Hope this helps Bill Moffat -----Original Message----- From: Martin De_Kegelaer [mailto:martin.dekegelaer.md@belgium.agfa.com] Sent: Monday, March 25, 2002 1:50 AM To: mems-talk@memsnet.org Subject: [mems-talk] SiOC coating Dear Mems specialists, Does anyone knows who can coat SiOC on a polyimid substrate for us? Thank you and best regards, Martin De Kegelaer AGFA-GEVAERT N.V. _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From BMoffat@yieldengineering.com Mon Mar 25 16:43:22 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Mon, 25 Mar 2002 08:43:22 -0800 Subject: [mems-talk] Tantalum Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC01D98D@exchange.yield.yield engineering.com> Samrat, You may want to think about metal lift off. We have experience of over a micron of gold and also up to 25 microns of Copper as a plate up solution. Bill Moffat -----Original Message----- From: Samrat Mukherjee [mailto:kamakal2000@yahoo.com] Sent: Sunday, March 24, 2002 1:49 PM To: mems-talk@memsnet.org Subject: [mems-talk] Tantalum Hi , Could any one give me some information about Tantulum. I would like to know the following. 1: How do you pattern Tantalum? I know that you can use HF:HNO3=1:1 to etch Ta, but what can you use to protect the region that you donot want to etch. 2: What are the sputtering conditions in which you can get very low stress Ta-film that is 1 micron thick. The Ta is being sputtered on Palladium. Also, I cannot heat the substrate above 600 degree C. Thanks, Samrat Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From A.vanZuuk@Mapperlithography.com Mon Mar 25 17:16:44 2002 From: A.vanZuuk@Mapperlithography.com (A.vanZuuk@Mapperlithography.com) Date: Mon, 25 Mar 2002 18:16:44 +0100 Subject: [mems-talk] Si on quartz Message-ID: Hi, can anyone tell me where I can buy 4 inch quartz wafers with 5 to 10 um crystalline Si bonded to it. With regards, Arjan van Zuuk From mvnari@hotmail.com Mon Mar 25 23:03:12 2002 From: mvnari@hotmail.com (Naresh Mantravadi) Date: Mon, 25 Mar 2002 15:03:12 -0800 Subject: [mems-talk] IGES file generation from L-Edit database Message-ID: Dear MEMS Researchers, I need some help with Ansys Multi-Physics module. I would like to know if I can convert the L-Edit layout file which I can later convert to *.IGES file which can be used in the ANSYS Multi-Physics simulation module. I would really appreciate it if you can tell me if there is any command or something like that. Or do we need to a separate software to do this conversion ? Thanks a lot for your help. One more thing is that, in L-Edit all layers that are drawn are in 2-D . In Ansys these need to be in 3-D for simulation purposes. Is there any option/command to do this conversion?? Thanks again. Naresh Mantravadi --------------------------------------------------------------------------- ----------------------------------------------------- ITS ONLY IN THE DICTIONARY THAT YOU FIND SUCCESS BEFORE WORK --------------------------------------------------------------------------- ----------------------------------------------------- From main@nanomaster.com Tue Mar 26 01:59:11 2002 From: main@nanomaster.com (Birol Kuyel) Date: Mon, 25 Mar 2002 17:59:11 -0800 Subject: [mems-talk] Etching In-Reply-To: Message-ID: <000a01c1d469$d388d860$ce3708cf@pavilion> Dear Sami, We manufacture custom PECVD, RIE, and Sputter Coaters. Please let us know your requirements. Best Regards, Birol Kuyel, Ph.D. NANO-MASTER INC -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org] On Behalf Of Rifai, Sami Sent: Sunday, March 24, 2002 8:02 AM To: mems-talk@memsnet.org Subject: [mems-talk] Etching Hi all, I am trying to identify eteching equipment manufacturers. I understand Alcatel vacuum is one. Is that right? Who are the other manufacturers? Thanks Sami _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From main@nanomaster.com Tue Mar 26 02:03:26 2002 From: main@nanomaster.com (Birol Kuyel) Date: Mon, 25 Mar 2002 18:03:26 -0800 Subject: [mems-talk] Clean room equipment In-Reply-To: <200203212210.g2LMAio6004109@cs.sfu.ca> Message-ID: <000b01c1d46a$6b917040$ce3708cf@pavilion> Dear Mr. Robert Johnson, Please check our web site nanomaster.com, we would be more than happy to provide quote on standard items as well as any custom manufacturing you may require. Best Regards, Birol Kuyel -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org] On Behalf Of Robert Johnstone Sent: Thursday, March 21, 2002 2:11 PM To: mems-talk@memsnet.org Subject: [mems-talk] Clean room equipment Hello Everyone, I'm interested in starting a new clean-room from scratch. Since we have a very good idea of the processes we want to run, I decided to collect information about the necessary equipment online. However, it turns out that most suppliers are very closed-mouthed about the equipment. I understand there aren't going to quote prices, but I at least want comprehensive information about floor space and required support services (air, vacuum, power, etc.). Could someone please point me to a good source for this information? Thank-you, ---------------------------------------- Robert Johnstone Simon Fraser University http://www.sfu.ca/~rjohnsto/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From bill@emergesemi.com Tue Mar 26 00:47:34 2002 From: bill@emergesemi.com (Bill Noard) Date: Mon, 25 Mar 2002 16:47:34 -0800 Subject: [mems-talk] Plasmatherm Systems Message-ID: <000001c1d460$08bce2b0$6901a8c0@SHUYNH> We have two Plasmatherm Systems for sale: SLR 770 ICP and VLR Versalok 700. Both systems are currently installed and available for demonstration. Please contact me by reply for call the number below for quotations and pictures of the systems. William L. Noard Director Emerge Semiconductor 510-657-8900 From jkoh@cisd.yonsei.ac.kr Tue Mar 26 04:09:12 2002 From: jkoh@cisd.yonsei.ac.kr (=?ks_c_5601-1987?B?v8DB+LHU?=) Date: Tue, 26 Mar 2002 13:09:12 +0900 Subject: [mems-talk] [help] Load/Unload & sweep velocity ( horizonal) Message-ID: <001601c1d47b$fca0b120$7f8f84a5@cisdr008> Hi all, I am trying to estimate HDI(Head/Disk Interface) of Load/Unload at microdrive. But I can't search reasonable loading/unloading & sweeping velocity ( horizonal). Does anyone knows who can operate loading/unloading & sweeping velocity ( horizonal) for us? Thank you and best regards, Oh jin-kyu. Yonsei Univ. Korea Center for Information Storage Device From frank_berauer@hp.com Tue Mar 26 04:55:30 2002 From: frank_berauer@hp.com (BERAUER,FRANK (HP-Singapore,ex7)) Date: Tue, 26 Mar 2002 12:55:30 +0800 Subject: [mems-talk] Thermopile design Message-ID: <2CFFECBFFEEEAF4DB4B2EB9BD47A736639968E@xsg07.sgp.hp.com> You could contact PerkinElmer Optoelectronics Germany. They are the market leader in MEMS thermopile sensors. Dr. Schiefferdecker is the R&D manager for thermopiles there. (Wenzel-Jaksch-Str. 31, D-65199 Wiesbaden, Phone: +49 (611) 492-0, Fax: +49 (611) 492-369) Greetings, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore -----Original Message----- From: Amin Abdul-Fattah [mailto:aminalimari@rogers.com] Sent: Monday, March 25, 2002 11:48 PM To: mems talk Subject: [mems-talk] Thermopile design Thermopile design Could you pls. send my the relation between the number of strips, the total resistance, the sheet resistance, and the total length and width of the structure. (Neglect separation between silicon strips) Also what is the sensitivity of the thermopile? waiting yr reply. Thanks and regards Amin Imari _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From hoyincym@hotmail.com Tue Mar 26 12:49:29 2002 From: hoyincym@hotmail.com (Chan Ho Yin) Date: Tue, 26 Mar 2002 12:49:29 +0000 Subject: [mems-talk] Sacrifical release Message-ID: Hi all, I am a beginner in MEMS field and I am now fabricating a simple cantilever beam. The sacrifical layer is Al (~2um). The beam thickness is ~0.5um and length is ~500um. When I tried to release the structure using AZ300 PR developer, I found that the released beam will bent or twist due to the force caused by the fluid flow (PR developer). Even I hold the sample carefully, the beam still bent or twist when I tried to pull the sample out of the solution. It can't stand straight. What should I do? Is there any technique in handling this?? I guess this might too simple to you. But it is important to me. Can you suggest me with detailed steps? Thank you very much!!!! Yours, Hoyin _________________________________________________________________ (O%N%~2y3L&h$H(O%N*:9q$l6l%s*A0H MSN Hotmail!A=P2>&\ http://www.hotmail.com !C From arbez@cyberway.com.sg Tue Mar 26 13:52:49 2002 From: arbez@cyberway.com.sg (Zann) Date: Tue, 26 Mar 2002 21:52:49 +0800 Subject: [mems-talk] Etch oxide not nitride Message-ID: <000801c1d4cd$85a8c920$ea589cca@gjwwxsqx> Is there any etchant that etch oxide but not nitride? From mike.tippetts@pfe-ltd.com Tue Mar 26 14:51:54 2002 From: mike.tippetts@pfe-ltd.com (Mike Tippetts) Date: Tue, 26 Mar 2002 14:51:54 -0000 Subject: [mems-talk] Plasma ashing Message-ID: <01C1D4D5.C71EEDA0.mike.tippetts@pfe-ltd.com> I am currently trying to commision a TePla 300 Plasma processor for the use in removing photoresist from devices after RIE but I am left with small residues which are impossible to remove. What are the best resist removal conditions and how can the temperature be kept as low as possible? Also is there any way to strip resist from chrome without removing the chrome as well. Mike Tippetts From BobHendu@aol.com Tue Mar 26 15:11:10 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Tue, 26 Mar 2002 10:11:10 EST Subject: [mems-talk] Etch oxide not nitride Message-ID: Buffered oxide etchant of around 6:1 ammonium Fluoride+ di water will work well for etching oxide but not nitride. Bob Henderson From fowler@seas.ucla.edu Tue Mar 26 15:22:02 2002 From: fowler@seas.ucla.edu (Mighty Platypus) Date: Tue, 26 Mar 2002 07:22:02 -0800 (PST) Subject: [mems-talk] Sacrifical release In-Reply-To: Message-ID: Greetings Chan Ho, What you're probably seeing is the result of film stress, not any sort of fluid force. You'll probably be able to find some information about stress reduction in Madou, Kovacs, Trimmer, or possibly even Maluf. By the way, what material are you depositing on top of Aluminum (to make your beams)? Jesse Fowler UCLA/MAE Dept., 420 Westwood Plaza, Room 18-121, ENGR IV Los Angeles, CA 90095-1597 | (310)825-3977 "Battery is safe if not provoked." -- _Batteries in a Portable World_ On Tue, 26 Mar 2002, Chan Ho Yin wrote: > Hi all, > > I am a beginner in MEMS field and I am now fabricating a simple > cantilever beam. The sacrifical layer is Al (~2um). The beam thickness is > ~0.5um and length is ~500um. When I tried to release the structure using > AZ300 PR developer, I found that the released beam will bent or twist due > to the force caused by the fluid flow (PR developer). > > Even I hold the sample carefully, the beam still bent or twist when I > tried to pull the sample out of the solution. It can't stand straight. What > should I do? Is there any technique in handling this?? I guess this might > too simple to you. But it is important to me. Can you suggest me with > detailed steps? Thank you very much!!!! > > Yours, > Hoyin > > > > _________________________________________________________________ > (O%N%~2y3L&h$H(O%N*:9q$l6l%s*A0H MSN Hotmail!A=P2>&\ http://www.hotmail.com > !C > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From michael.martin@louisville.edu Tue Mar 26 15:43:18 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Tue, 26 Mar 2002 10:43:18 -0500 Subject: [mems-talk] [help] Load/Unload & sweep velocity ( horizonal) Message-ID: I'm not sure I completely understand the question, but if you need a method for testing your hard drives you might talk to Dover Instruments. They make test stands for HD testing. Contact would be: Roger Hess rhess@doverinstrument.com >>> jkoh@cisd.yonsei.ac.kr 03/25/02 08:09PM >>> Hi all, I am trying to estimate HDI(Head/Disk Interface) of Load/Unload at microdrive. But I can't search reasonable loading/unloading & sweeping velocity ( horizonal). Does anyone knows who can operate loading/unloading & sweeping velocity ( horizonal) for us? Thank you and best regards, Oh jin-kyu. Yonsei Univ. Korea Center for Information Storage Device _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From fowler@seas.ucla.edu Tue Mar 26 16:09:24 2002 From: fowler@seas.ucla.edu (Mighty Platypus) Date: Tue, 26 Mar 2002 08:09:24 -0800 (PST) Subject: [mems-talk] Plasma ashing In-Reply-To: <01C1D4D5.C71EEDA0.mike.tippetts@pfe-ltd.com> Message-ID: Well, with wet processing, you can use ALEG-355 from Mallincrodt Baker. It works quite well. Dry, I would try RIE O2 plasma, but it seems like that would do something to the chrome. Jesse Fowler UCLA/MAE Dept., 420 Westwood Plaza, Room 18-121, ENGR IV Los Angeles, CA 90095-1597 | (310)825-3977 "Battery is safe if not provoked." -- _Batteries in a Portable World_ On Tue, 26 Mar 2002, Mike Tippetts wrote: > I am currently trying to commision a TePla 300 Plasma processor for the use > in removing photoresist from devices after RIE but I am left with small > residues which are impossible to remove. What are the best resist removal > conditions and how can the temperature be kept as low as possible? Also is > there any way to strip resist from chrome without removing the chrome as > well. > > Mike Tippetts > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From hoyincym@hotmail.com Tue Mar 26 16:11:49 2002 From: hoyincym@hotmail.com (Chan Ho Yin) Date: Tue, 26 Mar 2002 16:11:49 +0000 Subject: [mems-talk] Sacrifical release Message-ID: Hi Mighty, Thank you for your help first!!! On top of Al, I have deposited polymer Parylene. I guess may be you are right. I can see that the beam bends. But my problem is that I can see the beam floating on the solution, with one end fixed on the substrate. I don't know whether you can understand or not. Let's say, when I shake the bottle with solution inside, the beam cannot withstand the fuild flow and vibrate to and fro. In fact, I am not shaking the bottle. I've just pulled the substrate out. I should say.. the beam will follow the fuild motion. Hope you can understand. My english is not good enough!!! Thank you very much!!!! Yours, Hoyin >From: Mighty Platypus >Reply-To: mems-talk@memsnet.org >To: mems-talk@memsnet.org >Subject: Re: [mems-talk] Sacrifical release >Date: Tue, 26 Mar 2002 07:22:02 -0800 (PST) > >Greetings Chan Ho, >What you're probably seeing is the result of film stress, not any sort of >fluid force. You'll probably be able to find some information about stress >reduction in Madou, Kovacs, Trimmer, or possibly even Maluf. By the way, >what material are you depositing on top of Aluminum (to make your beams)? > >Jesse Fowler > UCLA/MAE Dept., 420 Westwood Plaza, Room 18-121, ENGR IV > Los Angeles, CA 90095-1597 | (310)825-3977 >"Battery is safe if not provoked." -- _Batteries in a Portable World_ > >On Tue, 26 Mar 2002, Chan Ho Yin wrote: > > > Hi all, > > > > I am a beginner in MEMS field and I am now fabricating a simple > > cantilever beam. The sacrifical layer is Al (~2um). The beam thickness is > > ~0.5um and length is ~500um. When I tried to release the structure using > > AZ300 PR developer, I found that the released beam will bent or twist due > > to the force caused by the fluid flow (PR developer). > > > > Even I hold the sample carefully, the beam still bent or twist when I > > tried to pull the sample out of the solution. It can't stand straight. What > > should I do? Is there any technique in handling this?? I guess this might > > too simple to you. But it is important to me. Can you suggest me with > > detailed steps? Thank you very much!!!! > > > > Yours, > > Hoyin > > > > > > > > _________________________________________________________________ > > (O%N%~2y3L&h$H(O%N*:9q$l6l%s*A0H MSN Hotmail!A=P2>&\ http://www.hotmail.com > > !C > > _______________________________________________ > > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > > Hosted by the MEMS Exchange, providers of MEMS processing services. > > Visit us at http://www.mems-exchange.org/ >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ _________________________________________________________________ (O%N MSN Messenger!A;P*B$M&b=u$W2a$Q!Ghttp://messenger.microsoft.com/tc!C From richard.morrison@icmechanics.com Tue Mar 26 16:28:49 2002 From: richard.morrison@icmechanics.com (Richard Morrison) Date: Tue, 26 Mar 2002 11:28:49 -0500 Subject: [mems-talk] Plasma ashing References: <01C1D4D5.C71EEDA0.mike.tippetts@pfe-ltd.com> Message-ID: <3CA0A1C1.1010808@icmechanics.com> If you are using Shipley Resists try 1165 remover at 60c, you generally use a 2 bath operation, also after the RIE etch try a little oxygen plasma before breaking vacuum this may help break up the skin that develops in the RIE etch step. Rick Morrison Mike Tippetts wrote: >I am currently trying to commision a TePla 300 Plasma processor for the use >in removing photoresist from devices after RIE but I am left with small >residues which are impossible to remove. What are the best resist removal >conditions and how can the temperature be kept as low as possible? Also is >there any way to strip resist from chrome without removing the chrome as >well. > >Mike Tippetts >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ From qmo@mail.utexas.edu Tue Mar 26 16:36:33 2002 From: qmo@mail.utexas.edu (Qingwei Mo) Date: Tue, 26 Mar 2002 10:36:33 -0600 Subject: [mems-talk] Plasma ashing In-Reply-To: Message-ID: I met similar problem before. What I did is make the pumping time longer before starting plasm, to make sure the chamber clean enough. Then, let the O2 in and stay at a pretty high pressure for several minutes. Then go down to the O2 pressure level you need to start the plasma to do the ashing. The machine I use is a very old PLASMOD. But this method I use does work very well to me. I hope It works to you also. good luck. Qingwei ********************************************************** Mo, Qingwei * Phone:(512)-476-4746 (H) * (512)-471-7917 (O) * Fax: (512)-471-8575 (O) * Email: qmo@ece.utexas.edu, qwmo@hotmail.com * * /------ \ | | / ---------------------\ * | ----- | |Microelectronic Research Center* | [ @ @ ] | Electrical and Computer Eng. * \--oOOO-----(_)----OO0o-| University of Texas at Austin * ********************************************************** -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of Mighty Platypus Sent: Tuesday, March 26, 2002 10:09 AM To: 'mems-talk@memsnet.org' Subject: Re: [mems-talk] Plasma ashing Well, with wet processing, you can use ALEG-355 from Mallincrodt Baker. It works quite well. Dry, I would try RIE O2 plasma, but it seems like that would do something to the chrome. Jesse Fowler UCLA/MAE Dept., 420 Westwood Plaza, Room 18-121, ENGR IV Los Angeles, CA 90095-1597 | (310)825-3977 "Battery is safe if not provoked." -- _Batteries in a Portable World_ On Tue, 26 Mar 2002, Mike Tippetts wrote: > I am currently trying to commision a TePla 300 Plasma processor for the use > in removing photoresist from devices after RIE but I am left with small > residues which are impossible to remove. What are the best resist removal > conditions and how can the temperature be kept as low as possible? Also is > there any way to strip resist from chrome without removing the chrome as > well. > > Mike Tippetts > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From fowler@seas.ucla.edu Tue Mar 26 16:48:39 2002 From: fowler@seas.ucla.edu (Mighty Platypus) Date: Tue, 26 Mar 2002 08:48:39 -0800 (PST) Subject: [mems-talk] Sacrifical release In-Reply-To: Message-ID: Hi Hoyin, Y-C Tai's group (from CalTech) presented a couple of papers with free-staanding parylene beams at MEMS 2002. It appears they used dry etching to release their beams (BrF3 etching polysilicon). Perhaps they have some insight on wet releasing. Jesse Fowler UCLA/MAE Dept., 420 Westwood Plaza, Room 18-121, ENGR IV Los Angeles, CA 90095-1597 | (310)825-3977 "Battery is safe if not provoked." -- _Batteries in a Portable World_ On Tue, 26 Mar 2002, Chan Ho Yin wrote: > Hi Mighty, > > Thank you for your help first!!! > > On top of Al, I have deposited polymer Parylene. I guess may be you are > right. I can see that the beam bends. But my problem is that I can see the > beam floating on the solution, with one end fixed on the substrate. I don't > know whether you can understand or not. Let's say, when I shake the bottle > with solution inside, the beam cannot withstand the fuild flow and vibrate > to and fro. In fact, I am not shaking the bottle. I've just pulled the > substrate out. I should say.. the beam will follow the fuild motion. Hope > you can understand. My english is not good enough!!! > > Thank you very much!!!! > > Yours, > Hoyin > > > >From: Mighty Platypus > >Reply-To: mems-talk@memsnet.org > >To: mems-talk@memsnet.org > >Subject: Re: [mems-talk] Sacrifical release > >Date: Tue, 26 Mar 2002 07:22:02 -0800 (PST) > > > >Greetings Chan Ho, > >What you're probably seeing is the result of film stress, not any sort of > >fluid force. You'll probably be able to find some information about stress > >reduction in Madou, Kovacs, Trimmer, or possibly even Maluf. By the way, > >what material are you depositing on top of Aluminum (to make your beams)? > > > >Jesse Fowler > > UCLA/MAE Dept., 420 Westwood Plaza, Room 18-121, ENGR IV > > Los Angeles, CA 90095-1597 | (310)825-3977 > >"Battery is safe if not provoked." -- _Batteries in a Portable World_ > > > >On Tue, 26 Mar 2002, Chan Ho Yin wrote: > > > > > Hi all, > > > > > > I am a beginner in MEMS field and I am now fabricating a simple > > > cantilever beam. The sacrifical layer is Al (~2um). The beam thickness > is > > > ~0.5um and length is ~500um. When I tried to release the structure > using > > > AZ300 PR developer, I found that the released beam will bent or twist > due > > > to the force caused by the fluid flow (PR developer). > > > > > > Even I hold the sample carefully, the beam still bent or twist when > I > > > tried to pull the sample out of the solution. It can't stand straight. > What > > > should I do? Is there any technique in handling this?? I guess this > might > > > too simple to you. But it is important to me. Can you suggest me with > > > detailed steps? Thank you very much!!!! > > > > > > Yours, > > > Hoyin > > > > > > > > > > > > _________________________________________________________________ > > > (O%N%~2y3L&h$H(O%N*:9q$l6l%s*A0H MSN Hotmail!A=P2>&\ > http://www.hotmail.com > > > !C > > > _______________________________________________ > > > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > > > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > > > Hosted by the MEMS Exchange, providers of MEMS processing services. > > > Visit us at http://www.mems-exchange.org/ > >_______________________________________________ > >mems-talk@memsnet.org mailing list: to unsubscribe or change your list > >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > >Hosted by the MEMS Exchange, providers of MEMS processing services. > >Visit us at http://www.mems-exchange.org/ > > > > > _________________________________________________________________ > (O%N MSN Messenger!A;P*B$M&b=u$W2a$Q!Ghttp://messenger.microsoft.com/tc!C > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From rshile@tmmicro.com Tue Mar 26 17:01:40 2002 From: rshile@tmmicro.com (Roger Shile) Date: Tue, 26 Mar 2002 09:01:40 -0800 Subject: [mems-talk] Plasma ashing Message-ID: ACT/EMT 400 stripper from Ashland chemical will remove positive resist without damaging underlying Cr. I have also found this stripper very effective in removing resist burned from RIE processing. Roger Shile >>> mike.tippetts@pfe-ltd.com 03/26/02 06:51AM >>> I am currently trying to commision a TePla 300 Plasma processor for the use in removing photoresist from devices after RIE but I am left with small residues which are impossible to remove. What are the best resist removal conditions and how can the temperature be kept as low as possible? Also is there any way to strip resist from chrome without removing the chrome as well. Mike Tippetts _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From kirt_williams@agilent.com Tue Mar 26 18:15:40 2002 From: kirt_williams@agilent.com (kirt_williams@agilent.com) Date: Tue, 26 Mar 2002 10:15:40 -0800 Subject: [mems-talk] Etch oxide not nitride Message-ID: > Is there any etchant that etches oxide but not nitride? Any HF-based solution, such as 10:1 HF, 5:1 BHF, or 10:1 BHF will etch thermal silicon dioxide, low-temperature LPCVD oxide, PSG, etc. much faster than LPCVD silicon nitride (both stoichiometric and low-stress). PECVD nitride is a much "lower quality" nitride than LPCVD, however, any can etch almost as fast as oxide, depending on the deposition conditions. If you're using PECVD nitride and want a low HF etch rate, deposit it at higher temperature to reduce the amount of hydrogen in the material. I've also found that silicon-rich PECVD nitride (with higher refractive index) can etch 100X more slowly than a low-index nitride. For plasma etches, I don't know of anything that is very selective. --Kirt Williams Agilent Technologies From satej7ua@yahoo.com Tue Mar 26 18:20:25 2002 From: satej7ua@yahoo.com (Satej Chaudhary) Date: Tue, 26 Mar 2002 10:20:25 -0800 (PST) Subject: [mems-talk] Costs of setting up a lab Message-ID: <20020326182025.50198.qmail@web13607.mail.yahoo.com> hi I am working on a business plan for setting up a microfluidics startup. Could anybody familiar with costs of setting up a lab etc help me with quotations for some instruments like 1. Thermal evaporator for Al Cr Au 2. Sputtering machine for SiO2 Are you aware of some "industrial grade 1000 A metal" depsition methods or the cheapest way to deposit a thin metal film? All I need to do in my application is etch a track of closely spaced square metal electrodes on a plastic substrate or something. Thank you Satej Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ From matthuang@nanoinsight.com Tue Mar 26 19:56:53 2002 From: matthuang@nanoinsight.com (Matthew Huang) Date: Tue, 26 Mar 2002 11:56:53 -0800 (PST) Subject: [mems-talk] wafer cleaving services Message-ID: <20020326195653.70427.qmail@web14408.mail.yahoo.com> Will very much appreciate any information about wafer dicing via wafer cleaving approach service providers, particularly in the Silicon Valley area. Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ From BMoffat@yieldengineering.com Tue Mar 26 21:00:06 2002 From: BMoffat@yieldengineering.com (Bill Moffat) Date: Tue, 26 Mar 2002 13:00:06 -0800 Subject: [mems-talk] Plasma ashing Message-ID: <240593772F9E5C4BB5BECE5FF0B937EC12CE00@exchange.yield.yield engineering.com> Mike, With all plasma devices you introduce heat as the plasma gas is hot. If the design of the plasma reactor is inefficient the heat generated goes up. It is quite possible the increasing heat is baking the resist before the Oxygen plasma can remove it. Try tests where you plasma clean for a fraction of the usual time, then introduce nitrogen back to atmosphere to cool the substrate. If this approach obviously multiplied by the number of plasma cycles gets the resist off, you have a temperature problem. Bill Moffat -----Original Message----- From: Mike Tippetts [mailto:mike.tippetts@pfe-ltd.com] Sent: Tuesday, March 26, 2002 6:52 AM To: 'mems-talk@memsnet.org' Subject: [mems-talk] Plasma ashing I am currently trying to commision a TePla 300 Plasma processor for the use in removing photoresist from devices after RIE but I am left with small residues which are impossible to remove. What are the best resist removal conditions and how can the temperature be kept as low as possible? Also is there any way to strip resist from chrome without removing the chrome as well. Mike Tippetts _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From ocellek@hotmail.com Tue Mar 26 20:51:35 2002 From: ocellek@hotmail.com (oray orkun cellek) Date: Tue, 26 Mar 2002 22:51:35 +0200 Subject: [mems-talk] 9um solid state laser References: <01C1D4D5.C71EEDA0.mike.tippetts@pfe-ltd.com> Message-ID: Hello, Not a pure MEMS question but somehow may be related : Can anybody give a name of a solid state laser material emitting at 9um infrared ? Thanks, Oray Orkun Cellek Research Assistant Middle East Technical University Electrical & Electronics Engineering Department 06531, Ankara, Turkey o.o.cellek@ieee.org Tel : +90 312 210 4579 Fax : +90 312 210 1261 From akine@eng.uci.edu Wed Mar 27 00:07:42 2002 From: akine@eng.uci.edu (allen kine) Date: Tue, 26 Mar 2002 16:07:42 -0800 Subject: [mems-talk] UV cured silicones Message-ID: <4.3.1.2.20020326155723.00b5d6d0@pop3.norton.antivirus> A 1997 article J.C. Lotters described the application of a UV cured PDMS for MEMS structures. The shear modulus was approximately 250,000 Pascals. The article used ABCR851 ((methacryloxypropyl)methylsiloxane) with 2,2-dimethoxy 2-phenylacetopheneone catalyst. ABCR851 is not currently shown on the ABCR website. Is there a commercial UV cured silicone which would have a similar shear modulus. Is there a correlation between the shear modulus and the shore durometer measurement? From TJ.Davis@csiro.au Wed Mar 27 03:22:12 2002 From: TJ.Davis@csiro.au (TJ.Davis@csiro.au) Date: Wed, 27 Mar 2002 14:22:12 +1100 Subject: [mems-talk] Direct write UV laser scanning Message-ID: <4897C24A770BD411837E00C04F01A1FC023705E4@clex2.vic.CSIRO.AU > Hi memsnet I am looking for information about UV laser scanning systems for writing patterns onto photoresist directly from digital artwork. Such a system would consist of a UV laser, a modulator to control the UV dose and a scanning head. A search of the web locates many references to systems like this but there do not seem to be any suppliers mentioned. I would be grateful for any information about what is around and who can supply it. Regards Tim Davis CSIRO Australia. From frank_berauer@hp.com Wed Mar 27 05:06:49 2002 From: frank_berauer@hp.com (BERAUER,FRANK (HP-Singapore,ex7)) Date: Wed, 27 Mar 2002 13:06:49 +0800 Subject: [mems-talk] Sacrifical release Message-ID: <2CFFECBFFEEEAF4DB4B2EB9BD47A7366399693@xsg07.sgp.hp.com> I do not quite understand your process, but here is what CAN happen in some devices: When you take the device out of the rinse, a small amount of liquid is trapped between beam and substrate. Its surface tension will bend the beam towards the substrate. If the beam touches the substrate, it might stay there even when the liquid is evaporated, due to stiction (which is a big issue in many micromechanical devices). Here are some ways to verify this: - If you can, check if the beam is straigt BEFORE taking out of the solution and only bends AFTER taking out. If so, you clearly have surface tension induced forces as you suspected. Of course, this is not easy to check unless you place the bath under a microscope. - Does your beam touch the substrate AFTER the liquid evaporated fully (bake it thoroughly)? If NOT, you probably have film stress induced forces, since stiction only happens on contact. Hope this helps. Greetings, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore -----Original Message----- From: Chan Ho Yin [mailto:hoyincym@hotmail.com] Sent: Tuesday, March 26, 2002 8:49 PM To: mems-talk@memsnet.org Subject: [mems-talk] Sacrifical release Hi all, I am a beginner in MEMS field and I am now fabricating a simple cantilever beam. The sacrifical layer is Al (~2um). The beam thickness is ~0.5um and length is ~500um. When I tried to release the structure using AZ300 PR developer, I found that the released beam will bent or twist due to the force caused by the fluid flow (PR developer). Even I hold the sample carefully, the beam still bent or twist when I tried to pull the sample out of the solution. It can't stand straight. What should I do? Is there any technique in handling this?? I guess this might too simple to you. But it is important to me. Can you suggest me with detailed steps? Thank you very much!!!! Yours, Hoyin _________________________________________________________________ (O%N%~2y3L&h$H(O%N*:9q$l6l%s*A0H MSN Hotmail!A=P2>&\ http://www.hotmail.com !C _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From Martin.WALKER@oxinst.co.uk Wed Mar 27 14:57:25 2002 From: Martin.WALKER@oxinst.co.uk (Martin.WALKER@oxinst.co.uk) Date: Wed, 27 Mar 2002 14:57:25 -0000 Subject: [mems-talk] re:DRIE of Quartz Message-ID: Hi Mathieu One way of etching high aspect ratio structures either in quartz or in thick deposited SiO2 layers involves high density plasmas. Typically, these would be generated in an inductively coupled plasma system (ICP). This has some advantages over conventional RIE, in particular relating to rate. Oxides are etched in these systems using C4F8 (possibly with O2 or H2 additions). The selectivity to photoresist is not great, so normally a metal mask (Cr, Al or Ni) would be used. There are several companies offering this process (including the one I work for) who would like to sell you a system, but there are also a number of other places who could run a few wafers for you. Drop me an email if you would like to know more about the process we have for this application. Regards, Martin Walker BSc(Tech) MSc Tactical Marketing Engineer Oxford Instruments Plasma Technology North End, Yatton, Bristol BS49 4AP UK T. +44 (0) 1934 837031 F. +44 (0) 1934 837001 E. W. ### OXFORD INSTRUMENTS http://www.oxford-instruments.com/ ### Unless stated above to be non-confidential, this E-mail and any attachments are private and confidential and are for the addressee only and may not be used, copied or disclosed save to the addressee. If you have received this E-mail in error please notify us upon receipt and delete it from your records. Internet communications are not secure and Oxford Instruments is not responsible for their abuse by third parties nor for any alteration or corruption in transmission. From Martin.WALKER@oxinst.co.uk Wed Mar 27 15:10:04 2002 From: Martin.WALKER@oxinst.co.uk (Martin.WALKER@oxinst.co.uk) Date: Wed, 27 Mar 2002 15:10:04 -0000 Subject: [mems-talk] re:how to etch SiO2 with RIE Message-ID: This note is for Peng Yao, about etching microscope slides. Microscope slides are generally not pure quartz (SiO2). They are non-crystalline (glass) containing other oxides such as sodium and calcium. These can make up a significant amount of the material, and are not easily removed by fluorine chemistry. The only way to get rid of them is to use a mixed fluorine/chlorine chemistry. We did have a nice process (developed with an optics company in Liechtenstein) that used CHClF2 (Halocarbon 22) but this is getting rather hard to find (being a CFC on the Montreal Protocol). If you can, you are better sticking to something that is pure SiO2. You can do RIE with mixed halide chemistries, but once you start using chlorine containing gases, it should be load-locked (or in a glove box), otherwise you may get a whiff of something rather nasty when you open the chamber. Regards Martin Walker BSc(Tech) MSc Tactical Marketing Engineer Oxford Instruments Plasma Technology North End, Yatton, Bristol BS49 4AP UK T. +44 (0) 1934 837031 F. +44 (0) 1934 837001 E. W. ### OXFORD INSTRUMENTS http://www.oxford-instruments.com/ ### Unless stated above to be non-confidential, this E-mail and any attachments are private and confidential and are for the addressee only and may not be used, copied or disclosed save to the addressee. If you have received this E-mail in error please notify us upon receipt and delete it from your records. Internet communications are not secure and Oxford Instruments is not responsible for their abuse by third parties nor for any alteration or corruption in transmission. From Martin.WALKER@oxinst.co.uk Wed Mar 27 15:13:26 2002 From: Martin.WALKER@oxinst.co.uk (Martin.WALKER@oxinst.co.uk) Date: Wed, 27 Mar 2002 15:13:26 -0000 Subject: [mems-talk] re:Pt RIE? Message-ID: Hi Mike Pt is difficult to shift by RIE. You can do it by using an argon plasma and running at high bias, but the resist gets too hot if you try etching too fast. You have to experiment to find how much power you can put in without frying the resist. Regards Martin Walker BSc(Tech) MSc Tactical Marketing Engineer Oxford Instruments Plasma Technology North End, Yatton, Bristol BS49 4AP UK T. +44 (0) 1934 837031 F. +44 (0) 1934 837001 E. W. ### OXFORD INSTRUMENTS http://www.oxford-instruments.com/ ### Unless stated above to be non-confidential, this E-mail and any attachments are private and confidential and are for the addressee only and may not be used, copied or disclosed save to the addressee. If you have received this E-mail in error please notify us upon receipt and delete it from your records. Internet communications are not secure and Oxford Instruments is not responsible for their abuse by third parties nor for any alteration or corruption in transmission. From iog@inbox.ru Wed Mar 27 17:58:34 2002 From: iog@inbox.ru (iog) Date: Wed, 27 Mar 2002 20:58:34 +0300 Subject: [mems-talk] Mask fabrication service... Message-ID: Hi all! Thank you for information on laser cutting services! I'm searching for mask fabrication service for fabrication cromium masks for projection lithography. Can anybody give me some information? If somebody has experience of using such service, please, feel free to give your estimation about the price of fabrication of 8 layers. Rgrds, Igor From salmanz@ahmed.com.pk Wed Mar 27 15:04:20 2002 From: salmanz@ahmed.com.pk (SALMAN ZAFAR) Date: Wed, 27 Mar 2002 07:04:20 -0800 Subject: [mems-talk] micromachined capacitive pressure sensors Message-ID: <200203271504.g2RF4KS09347@mail10.bigmailbox.com> [demime could not interpret encoding binary - treating as plain text] hi, dear fellows, can anybody suggest me some opamps, which can be used as post amps in the subject mentioned. hope to see a considerate response soon, salman turkey ------------------------------------------------------------ Ahmed.com.pk - Free Webbased email service --------------------------------------------------------------------- Express yourself with a super cool email address from BigMailBox.com. Hundreds of choices. It's free! http://www.bigmailbox.com --------------------------------------------------------------------- From mnorcott@sigen.com Wed Mar 27 20:58:40 2002 From: mnorcott@sigen.com (Maurice Norcott) Date: Wed, 27 Mar 2002 12:58:40 -0800 Subject: [mems-talk] wafer cleaving services Message-ID: <22C0729E179FDC40855355CB03915CB534BD0E@exch01.corp.local> Try Questech in TX for Wafer Dicing Questech - laser - contact Dustin Hickman or Randy House http://www.questlaser.com/ 2201 Executive Dr. Garland, TX 75041 (972).278.8006 (972).278.8036 Maurice H. Norcott Senior Technician Silicon Genesis Corporation 590 Division Street Campbell, CA 95008 408-871-3948 Office 408-977-6333 Pager mnorcott@Sigen.com -----Original Message----- From: Matthew Huang [mailto:matthuang@nanoinsight.com] Sent: Tuesday, March 26, 2002 11:57 AM To: mems-talk@memsnet.org Subject: [mems-talk] wafer cleaving services Will very much appreciate any information about wafer dicing via wafer cleaving approach service providers, particularly in the Silicon Valley area. Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From mnorcott@sigen.com Wed Mar 27 21:02:02 2002 From: mnorcott@sigen.com (Maurice Norcott) Date: Wed, 27 Mar 2002 13:02:02 -0800 Subject: [mems-talk] Costs of setting up a lab Message-ID: <22C0729E179FDC40855355CB03915CB534BD0F@exch01.corp.local> Try http://www.kdf.com/ , they have a system that can sputter 3 targets in line Maurice H. Norcott Senior Technician Silicon Genesis Corporation 590 Division Street Campbell, CA 95008 408-871-3948 Office 408-977-6333 Pager mnorcott@Sigen.com -----Original Message----- From: Satej Chaudhary [mailto:satej7ua@yahoo.com] Sent: Tuesday, March 26, 2002 10:20 AM To: mems-talk@memsnet.org Subject: [mems-talk] Costs of setting up a lab hi I am working on a business plan for setting up a microfluidics startup. Could anybody familiar with costs of setting up a lab etc help me with quotations for some instruments like 1. Thermal evaporator for Al Cr Au 2. Sputtering machine for SiO2 Are you aware of some "industrial grade 1000 A metal" depsition methods or the cheapest way to deposit a thin metal film? All I need to do in my application is etch a track of closely spaced square metal electrodes on a plastic substrate or something. Thank you Satej Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From rchen@kgi.edu Wed Mar 27 21:43:16 2002 From: rchen@kgi.edu (Richard Chen) Date: Wed, 27 Mar 2002 13:43:16 -0800 Subject: [mems-talk] Need Information about simple mask making Message-ID: <3FA493B792A6D311B51A009027D3B861BFB51B@mail.kgi.edu> Hi all, I am lookin for a way of making the mask from the printer. Can anybody suggest me where I can get this service near the L.A. area? Thanks! Richard Chen From fowler@seas.ucla.edu Wed Mar 27 22:57:53 2002 From: fowler@seas.ucla.edu (Mighty Platypus) Date: Wed, 27 Mar 2002 14:57:53 -0800 (PST) Subject: [mems-talk] Need Information about simple mask making In-Reply-To: <3FA493B792A6D311B51A009027D3B861BFB51B@mail.kgi.edu> Message-ID: Hi Richard, We use CCI Graphics, out of Gardena for Printshop masks. They can go down to about 30-40um, and they'll make a 5x5 glass mask for about $65. You can reach them at 310-515-0922. Jesse Fowler UCLA/MAE Dept., 420 Westwood Plaza, Room 37-129, ENGR IV Los Angeles, CA 90095-1597 | (310)825-3977 "Battery is safe if not provoked." -- _Batteries in a Portable World_ On Wed, 27 Mar 2002, Richard Chen wrote: > Hi all, > I am lookin for a way of making the mask from the printer. Can anybody > suggest me where I can get this service near the L.A. area? Thanks! > > Richard Chen > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From BobHendu@aol.com Wed Mar 27 23:02:24 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Wed, 27 Mar 2002 18:02:24 EST Subject: [mems-talk] Costs of setting up a lab Message-ID: <16d.b1565ab.29d3a980@aol.com> We make a variety of new and used thermal evaporation and sputtering units depending on your budget. You can contact me direct for additional information Bob Henderson Process Integration,LLC 480-558-1156 web site: www.processintegrationllc.com From BobHendu@aol.com Wed Mar 27 23:20:36 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Wed, 27 Mar 2002 18:20:36 EST Subject: [mems-talk] Need Information about simple mask making Message-ID: I once did a process of making the masks black and white on a Mac computer using a drawing program. Then I would take the disc to a service that printers use and have them make a mask of emulsion on a clear mylar sheet. The tool they used was some cool laser printer and it did the developing as well. This was good enough for me to use standard wafer photolithography to transfer the image to a substrate. Using deep contact printer I was able to resolve 2 micron features. Worked well for the images I was transferring. Good Luck Bob Henderson From lakshmin@eng.usf.edu Thu Mar 28 05:02:14 2002 From: lakshmin@eng.usf.edu (Balaji Lakshminarayanan) Date: Thu, 28 Mar 2002 00:02:14 -0500 (EST) Subject: [mems-talk] photosensitive polyimides Message-ID: Hi, Can anyone tell me companies that sell photosensitive polyimides. I am using it as a dielectric for variable capacitors. I searched the web and found clariant (their PIMEL series) sells the same, but they told us the quantities they ideally sell is difficult for educational institution to handle. Your help is greatly appreciated regards bala From lswang2001@yahoo.com Thu Mar 28 07:35:43 2002 From: lswang2001@yahoo.com (LSWANG) Date: Wed, 27 Mar 2002 23:35:43 -0800 (PST) Subject: [mems-talk] Pt electroplating Message-ID: <20020328073543.9772.qmail@web9708.mail.yahoo.com> Hi, there: Does anyone have experience on electroplating Pt on plastic mould. Appreciate any information from you! Best Lisen wang Yahoo! Movies - coverage of the 74th Academy Awards. http://movies.yahoo.com/ From Martin.WALKER@oxinst.co.uk Thu Mar 28 09:42:32 2002 From: Martin.WALKER@oxinst.co.uk (Martin.WALKER@oxinst.co.uk) Date: Thu, 28 Mar 2002 09:42:32 -0000 Subject: [mems-talk] Re: Etching Message-ID: Hi Sami, everyone We also provide etching equipment for the MEMS industry. Our range includes reactive ion etching (RIE), dual mode (plasma etch/reactive ion etch), inductively coupled plasma (ICP) and ion beam etching. The smallest systems are non-loadlocked, small footprint systems with a lower electrode diameter of 240mm, going up to fully clustered systems for cassette-to-cassette operation of 300mm wafers. Take a look at our website (see below) for more info, or email me direct. Regards Martin Walker BSc(Tech) MSc Tactical Marketing Engineer Oxford Instruments Plasma Technology North End, Yatton, Bristol BS49 4AP UK T. +44 (0) 1934 837031 F. +44 (0) 1934 837001 E. W. ### OXFORD INSTRUMENTS http://www.oxford-instruments.com/ ### Unless stated above to be non-confidential, this E-mail and any attachments are private and confidential and are for the addressee only and may not be used, copied or disclosed save to the addressee. If you have received this E-mail in error please notify us upon receipt and delete it from your records. Internet communications are not secure and Oxford Instruments is not responsible for their abuse by third parties nor for any alteration or corruption in transmission. From hoyincym@hotmail.com Thu Mar 28 15:17:21 2002 From: hoyincym@hotmail.com (Chan Ho Yin) Date: Thu, 28 Mar 2002 15:17:21 +0000 Subject: [mems-talk] Sacrifical release Message-ID: Thank you!!! I should say that the beam will bent or twist in the solution , or during the pull out of beam. In fact, in the solution, the beam cannot stand straight inside the solution. You can see it in the attachment. It is taken under the solution Yours, Hoyin >From: "BERAUER,FRANK (HP-Singapore,ex7)" >Reply-To: mems-talk@memsnet.org >To: "'mems-talk@memsnet.org'" >Subject: RE: [mems-talk] Sacrifical release >Date: Wed, 27 Mar 2002 13:06:49 +0800 > >I do not quite understand your process, but here is what CAN >happen in some devices: >When you take the device out of the rinse, a small amount of >liquid is trapped between beam and substrate. Its surface >tension will bend the beam towards the substrate. If the beam >touches the substrate, it might stay there even when the liquid >is evaporated, due to stiction (which is a big issue in many >micromechanical devices). >Here are some ways to verify this: >- If you can, check if the beam is straigt BEFORE taking out > of the solution and only bends AFTER taking out. If so, you > clearly have surface tension induced forces as you suspected. > Of course, this is not easy to check unless you place the > bath under a microscope. >- Does your beam touch the substrate AFTER the liquid evaporated > fully (bake it thoroughly)? If NOT, you probably have film > stress induced forces, since stiction only happens on contact. >Hope this helps. > >Greetings, > Frank Berauer > Senior R&D Engineer > Hewlett-Packard Singapore > > >-----Original Message----- >From: Chan Ho Yin [mailto:hoyincym@hotmail.com] >Sent: Tuesday, March 26, 2002 8:49 PM >To: mems-talk@memsnet.org >Subject: [mems-talk] Sacrifical release > > >Hi all, > > I am a beginner in MEMS field and I am now fabricating a simple >cantilever beam. The sacrifical layer is Al (~2um). The beam thickness is >~0.5um and length is ~500um. When I tried to release the structure using >AZ300 PR developer, I found that the released beam will bent or twist due >to the force caused by the fluid flow (PR developer). > > Even I hold the sample carefully, the beam still bent or twist when I >tried to pull the sample out of the solution. It can't stand straight. What >should I do? Is there any technique in handling this?? I guess this might >too simple to you. But it is important to me. Can you suggest me with >detailed steps? Thank you very much!!!! > >Yours, >Hoyin > > > >_________________________________________________________________ >(O%N%~2y3L&h$H(O%N*:9q$l6l%s*A0H MSN Hotmail!A=P2>&\ http://www.hotmail.com >!C >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ _________________________________________________________________ &b http://explorer.msn.com.hk/intl.asp 'K6O$U8| MSN Explorer From mac.mcreynolds@calipertech.com Thu Mar 28 15:21:15 2002 From: mac.mcreynolds@calipertech.com (Mac McReynolds) Date: Thu, 28 Mar 2002 07:21:15 -0800 Subject: [mems-talk] photosensitive polyimides Message-ID: Check archmicro.com. I think they took over the Probimide series originally from Ciba Geigy/Merck venture Mac McReynolds R&D Manager Caliper Technologies Corp. 605 Fairchild Drive Mountain View, CA 94043-2234 Tel: 650-623-0710 Fax: 650-623-0521 > ---------- > From: Balaji Lakshminarayanan > Reply To: mems-talk@memsnet.org > Sent: Wednesday, March 27, 2002 9:02 PM > To: mems-talk@memsnet.org > Subject: [mems-talk] photosensitive polyimides > > Hi, > > Can anyone tell me companies that sell photosensitive polyimides. I am > using it as a dielectric for variable capacitors. I searched the web and > found clariant (their PIMEL series) sells the same, but they told us the > quantities they ideally sell is difficult for educational institution to > handle. > > Your help is greatly appreciated > > regards > > bala > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From lshelley@micrometrics.com Thu Mar 28 15:19:23 2002 From: lshelley@micrometrics.com (Liz Shelley) Date: Thu, 28 Mar 2002 10:19:23 -0500 Subject: [mems-talk] photosensitive polyimides In-Reply-To: Message-ID: MicroChem sells smaller quantities of their products. They are the manufacturers of SU-8, but they also manufacture a complete line of other photosensitive products. Liz Shelley > From: Balaji Lakshminarayanan > Reply-To: mems-talk@memsnet.org > Date: Thu, 28 Mar 2002 00:02:14 -0500 (EST) > To: mems-talk@memsnet.org > Subject: [mems-talk] photosensitive polyimides > > Hi, > > Can anyone tell me companies that sell photosensitive polyimides. I am > using it as a dielectric for variable capacitors. I searched the web and > found clariant (their PIMEL series) sells the same, but they told us the > quantities they ideally sell is difficult for educational institution to > handle. > > Your help is greatly appreciated > > regards > > bala > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From mrousey@tegal.com Thu Mar 28 15:55:50 2002 From: mrousey@tegal.com (mrousey@tegal.com) Date: Thu, 28 Mar 2002 07:55:50 -0800 Subject: [mems-talk] photosensitive polyimides Message-ID: <9006BE46E48BD411940500508BDC942D0192B967@exchange1.tegal.co m> Check out the Hitachi-DuPont line of photosensitive P.I.'s. The URL for their website is: http://www.hdmicrosystems.com/ Cheers, Mark Rousey-Seidel Applications Manager, Tegal Corporation -----Original Message----- From: Mac McReynolds [mailto:mac.mcreynolds@calipertech.com] Sent: Thursday, March 28, 2002 7:21 AM To: 'mems-talk@memsnet.org' Subject: RE: [mems-talk] photosensitive polyimides Check archmicro.com. I think they took over the Probimide series originally from Ciba Geigy/Merck venture Mac McReynolds R&D Manager Caliper Technologies Corp. 605 Fairchild Drive Mountain View, CA 94043-2234 Tel: 650-623-0710 Fax: 650-623-0521 > ---------- > From: Balaji Lakshminarayanan > Reply To: mems-talk@memsnet.org > Sent: Wednesday, March 27, 2002 9:02 PM > To: mems-talk@memsnet.org > Subject: [mems-talk] photosensitive polyimides > > Hi, > > Can anyone tell me companies that sell photosensitive polyimides. I am > using it as a dielectric for variable capacitors. I searched the web and > found clariant (their PIMEL series) sells the same, but they told us the > quantities they ideally sell is difficult for educational institution to > handle. > > Your help is greatly appreciated > > regards > > bala > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From GregMattiussi@spectalis.com Thu Mar 28 15:57:08 2002 From: GregMattiussi@spectalis.com (Greg Mattiussi) Date: Thu, 28 Mar 2002 10:57:08 -0500 Subject: [mems-talk] wafer cleaving services Message-ID: <2D78D0279B05F7438EAEECD5DB717CA8094B64@server01.3849988cana da.com> A "scribe and break" equipment vendor is Dynatex International : (707) 542-4269 in Santa Rosa, CA. I don't know if they offer services, but given the condition of the market these days, equipment vendors can sometimes be more willing to bring in some revenue through services. Greg Mattiussi Spectalis Corp. > Subject: [mems-talk] wafer cleaving services > Will very much appreciate any information about > wafer dicing via wafer cleaving approach service > providers, particularly in the Silicon Valley > area. From weiwei2@pd.jaring.my Fri Mar 29 08:23:23 2002 From: weiwei2@pd.jaring.my (LEOW Cheah Wei) Date: Fri, 29 Mar 2002 00:23:23 -0800 (Pacific Standard Time) Subject: [mems-talk] Re: photosensitive polyimides Message-ID: <3CA4247B.00000D.84827@juice-station> Hi, we use a HD4000 series polymer from HD microsystem. It is photosensitive but i'm not sure whether it is suitable for you. Small volume purchase is possible. LEOW Cheah Wei Universiti Teknologi Malaysia [demime 0.98e removed an attachment of type image/gif] From Niels.Olij@Alcatel-optronics.nl Thu Mar 28 16:24:14 2002 From: Niels.Olij@Alcatel-optronics.nl (Niels Olij) Date: Thu, 28 Mar 2002 17:24:14 +0100 Subject: [mems-talk] Mask fabrication service... Message-ID: <696DAA9CDF1DD511982000508BAEC5743CFB62@enschedemail.aonl> Hi Igor, Try deltamask (http://www.deltamask.nl/). They have a good service and price/quality ratio. Niels Olij -----Original Message----- From: iog [mailto:iog@inbox.ru] Sent: woensdag 27 maart 2002 18:59 To: mems-talk@memsnet.org Subject: [mems-talk] Mask fabrication service... Hi all! Thank you for information on laser cutting services! I'm searching for mask fabrication service for fabrication cromium masks for projection lithography. Can anybody give me some information? If somebody has experience of using such service, please, feel free to give your estimation about the price of fabrication of 8 layers. Rgrds, Igor From craig@cs.dartmouth.edu Thu Mar 28 16:47:46 2002 From: craig@cs.dartmouth.edu (Craig McGray) Date: Thu, 28 Mar 2002 11:47:46 -0500 Subject: [mems-talk] Need Information about simple mask making References: Message-ID: <3CA34931.E52CE5DD@cs.dartmouth.edu> Hi Bob, I am cautiously excited about your last note regarding 2-micron feature-size masks from a mylar film print out. Did you really mean to say 2 microns? I have run a similar process, and have only been able to resolve ~20-micron features, although the printer used to produce the film had 4040 DPI resolution (6 micron dot size). I would be very interested in learning how you performed this process, and where you were able to find such high-resolution printing. Could you please provide the name of the company that provided this service? Thanks much! -Craig McGray 6211 Sudikoff Laboratory Dartmouth College Hanover, NH, USA 03755 mems-talk-request@memsnet.org wrote: > --__--__-- > > From: BobHendu@aol.com > Date: Wed, 27 Mar 2002 18:20:36 EST > Subject: Re: [mems-talk] Need Information about simple mask making > > I once did a process of making the masks black and white on a Mac computer > using a drawing program. Then I would take the disc to a service that > printers use and have them make a mask of emulsion on a clear mylar sheet. > The tool they used was some cool laser printer and it did the developing as > well. This was good enough for me to use standard wafer photolithography to > transfer the image to a substrate. Using deep contact printer I was able to > resolve 2 micron features. Worked well for the images I was transferring. > Good Luck > > Bob Henderson > > --__--__-- From wypeng@hotmail.com Thu Mar 28 17:25:51 2002 From: wypeng@hotmail.com (Wuyong Peng) Date: Thu, 28 Mar 2002 12:25:51 -0500 Subject: [mems-talk] Cu Electric Deposition in Cleanroom? Message-ID: Does anyone know if there is a cleanroom that allow Cu electric deposition and etching? Thank you. Wuyong Peng MRC, NJIT From michael.martin@louisville.edu Thu Mar 28 18:44:35 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Thu, 28 Mar 2002 13:44:35 -0500 Subject: [mems-talk] Direct write UV laser scanning Message-ID: Heidelberg instruments makes direct write systems. See www.himt.de -Mike >>> TJ.Davis@csiro.au 03/26/02 07:22PM >>> Hi memsnet I am looking for information about UV laser scanning systems for writing patterns onto photoresist directly from digital artwork. Such a system would consist of a UV laser, a modulator to control the UV dose and a scanning head. A search of the web locates many references to systems like this but there do not seem to be any suppliers mentioned. I would be grateful for any information about what is around and who can supply it. Regards Tim Davis CSIRO Australia. _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From yaopeng@UDel.Edu Thu Mar 28 20:47:54 2002 From: yaopeng@UDel.Edu (Peng Yao) Date: Thu, 28 Mar 2002 15:47:54 -0500 (EST) Subject: [mems-talk] Helium's role in RIE Message-ID: Hi all, I am using SF6+He to etch silicon. I thought He will be helpful to get a smother surface. I fixed all the other parameters like pressure, power, etching time... and only change the flow rate of SF6 and He. The strange thing is that the etching speed of SF6:He=10:20 was larger than that of SF6:He=20:20. (They were etched in same machine and at same day, one after the other) And also I found that if I fix the gas flow of SF6 and only change the persentage of He, the etching rate will increase with increasing the persentage of He. All these seem to indicate that He can not only cool the photoresist, but also will help the etching. Does anyone else has similar experience. And I am not sure what kind effect of He to side wall, will it make the process more isotropic or more anisotropic? Thanks a lot! Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 From rshile@tmmicro.com Thu Mar 28 21:12:28 2002 From: rshile@tmmicro.com (Roger Shile) Date: Thu, 28 Mar 2002 13:12:28 -0800 Subject: [mems-talk] Helium's role in RIE Message-ID: Did the addition of helium result in smoother etched surfaces? Adding O2 to SF6 will result in a more anisotropic etch, but tends to result in rougher surfaces. I wonder if adding helium will result in smoother surfaces, while maintaining an anisotropic etch profile. Roger Shile >>> yaopeng@UDel.Edu 03/28/02 12:47PM >>> Hi all, I am using SF6+He to etch silicon. I thought He will be helpful to get a smother surface. I fixed all the other parameters like pressure, power, etching time... and only change the flow rate of SF6 and He. The strange thing is that the etching speed of SF6:He=10:20 was larger than that of SF6:He=20:20. (They were etched in same machine and at same day, one after the other) And also I found that if I fix the gas flow of SF6 and only change the persentage of He, the etching rate will increase with increasing the persentage of He. All these seem to indicate that He can not only cool the photoresist, but also will help the etching. Does anyone else has similar experience. And I am not sure what kind effect of He to side wall, will it make the process more isotropic or more anisotropic? Thanks a lot! Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From BobHendu@aol.com Thu Mar 28 21:40:54 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Thu, 28 Mar 2002 16:40:54 EST Subject: [mems-talk] Helium's role in RIE Message-ID: <17.25a9bfb4.29d4e7e6@aol.com> Yours is an excellent observation. I have my ideas about what is happening but I would like to hear what others have observed first especially Bill Moffett. I find most of his answers to be right on the mark. Bob Henderson From P291122@ntu.edu.sg Fri Mar 29 01:41:57 2002 From: P291122@ntu.edu.sg (#TRUONG THAI QUANG#) Date: Fri, 29 Mar 2002 09:41:57 +0800 Subject: [mems-talk] Tesla valvular conduit Message-ID: <3D565922795545468AE3E3DA2881BEA918A18C@mail01.student.main. ntu.edu.sg> Hi all, I want to make a valve-less micropump based on Tesla valvular conduit. Is there a specific geometry for the conduit (angle, number of buckets....) ? I read Tesla patent but could not find. Your helps are much appreciated. Quang Nanyang Technological University, Singapore. From henryang@us.ibm.com Fri Mar 29 02:30:35 2002 From: henryang@us.ibm.com (Henry Yang) Date: Thu, 28 Mar 2002 18:30:35 -0800 Subject: [mems-talk] Cu Electric Deposition in Cleanroom? Message-ID: WHat do you mean electric depositon? Is that the same as electrodeposition, as in electroplating? Henry Yang "Wuyong Peng" @memsnet.org on 03/28/2002 09:25:51 AM Please respond to mems-talk@memsnet.org Sent by: mems-talk-admin@memsnet.org To: cc: Subject: [mems-talk] Cu Electric Deposition in Cleanroom? Does anyone know if there is a cleanroom that allow Cu electric deposition and etching? Thank you. Wuyong Peng MRC, NJIT _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From Jean-Marc.GRUFFAT@an.cit.alcatel.fr Fri Mar 29 09:03:11 2002 From: Jean-Marc.GRUFFAT@an.cit.alcatel.fr (Jean-Marc.GRUFFAT@an.cit.alcatel.fr) Date: Fri, 29 Mar 2002 10:03:11 +0100 Subject: [mems-talk] Etching Message-ID: <85256B8B.0031C888.00@notes.avp.alcatel.com> Dear Sami, You're right, Alcatel Vacuum Technology (AVT), headquartered in Annecy, France, is indeed a leading supplier of deep plasma etching sysytems. Alcatel Micro Machining Systems, a business unit within AVT, specialises in the designing, manufacturing, marketing and servicing of deep plasma etching systems to MEMS/MOEMS community around the globe. Please feel free to contact me directly or visit our website for more information. Should you be visiting Semicon Europa in Munich (April 16-18), please let me know, I will send you a personal invitation to the event we will be organising to introduce our new system. Kind regards Jean-Marc Gruffat Director of Sales & Marketing Alcatel Micro Machining Systems Tel 33 450 65 78 44 e-mail : jean-marc.gruffat@an.cit.alcatel.fr _______________________________________________________ Welcome to our new website http://www.alcatelvacuum.com From bchen@atmi.com Fri Mar 29 17:07:31 2002 From: bchen@atmi.com (bchen@atmi.com) Date: Fri, 29 Mar 2002 12:07:31 -0500 Subject: [mems-talk] Al oxide removal Message-ID: Dear MEMS coworkers, We currently utilize foundry service to fabricate our MEMS platform, and we functionalize the platform by coating a proprietary material. The existing platform design calls for, fresh out of foundry, a SiO2 top layer with contact openings to the underlying Al. The issue we run into is that the exposed Al is easily oxidized and the contact resistance varies from sample to sample. We have tried using chemistry removing the aluminum oxide layer prior to functionalization. Yet the oxidation happens so rapidly that a thin insulating oxide is formed between sample transfer (in air), so we alleviated but not eliminated the reproducibility difficulty. I appreciate any insights. Regards, Barry Chen From wypeng@hotmail.com Fri Mar 29 17:33:28 2002 From: wypeng@hotmail.com (Wuyong Peng) Date: Fri, 29 Mar 2002 12:33:28 -0500 Subject: [mems-talk] Cu Electric Deposition in Cleanroom? References: Message-ID: Yes. It is also called plating. Any idea I can do it in a cleanroom environment? Thanks in advance. Wuyong Peng ----- Original Message ----- From: "Henry Yang" To: Sent: Thursday, March 28, 2002 9:30 PM Subject: Re: [mems-talk] Cu Electric Deposition in Cleanroom? > WHat do you mean electric depositon? Is that the same as electrodeposition, > as in electroplating? > > Henry Yang > > "Wuyong Peng" @memsnet.org on 03/28/2002 09:25:51 AM > > Please respond to mems-talk@memsnet.org > > Sent by: mems-talk-admin@memsnet.org > > > To: > cc: > Subject: [mems-talk] Cu Electric Deposition in Cleanroom? > > > > Does anyone know if there is a cleanroom that allow Cu electric deposition > and > etching? Thank you. > > Wuyong Peng > MRC, NJIT > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From wypeng@hotmail.com Fri Mar 29 17:55:37 2002 From: wypeng@hotmail.com (Wuyong Peng) Date: Fri, 29 Mar 2002 12:55:37 -0500 Subject: [mems-talk] Bimorph cantilever using up to 500C(900K)? Message-ID: Hi All, I'm trying to make a bimorph cantilever based on Si substrate that can be used up to 500C or 932K. One layer is Si, The other layer should have large Thermal Expansion Coefficient (TEC) to give large tip deflection like metal. But it also has to be strong enough to use under that high temperature and stick well to Si. Anyone did this before or has any idea of the second material and how to fabricate it will be very helpfull. Thank you. Wuyong Peng MRC, NJIT From yaopeng@UDel.Edu Fri Mar 29 18:16:02 2002 From: yaopeng@UDel.Edu (Peng Yao) Date: Fri, 29 Mar 2002 13:16:02 -0500 (EST) Subject: [mems-talk] Helium's role in RIE Message-ID: Hi Roger, I think it not very easy to say if adding He will make the surface smoother or not. The reason is that generally, if you etch some with lower etching rate, the surface will be smoother. So, if increase He will increase etching speed, which was showed in my privious experiments (assume that this observation is right), the fast-etching effect of adding He will compansate the surface-smoothing effect. I think that's why my samples etched with different He concentration seems to be similar in surface quality. However, I still don't understand why adding He will increase the etching speed. Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 From dumbo_work@yahoo.com Fri Mar 29 19:32:36 2002 From: dumbo_work@yahoo.com (Jai Shinh) Date: Fri, 29 Mar 2002 11:32:36 -0800 (PST) Subject: [mems-talk] Cr/Cu wet etching Message-ID: <20020329193236.15662.qmail@web20410.mail.yahoo.com> Hello, Could anyone help me to solve the problem of wet etching Cr/Cu? The copper is on top of the chrome. I have a hard time protecting the copper when etching the chrome. For chrome etchants, I've tried 1020 AC from the Transene, and CR-4. The pattern is 40 microns in width, and Cr/Cu is 100 A/ 1 um. The undercut is severe. Any suggestions will be greatly appreciated. Regards, Jai Yahoo! Greetings - send greetings for Easter, Passover From monte@innovativemicrotech.com Fri Mar 29 19:26:14 2002 From: monte@innovativemicrotech.com (Heaton, Monte) Date: Fri, 29 Mar 2002 11:26:14 -0800 Subject: [mems-talk] Cu Electric Deposition in Cleanroom? Message-ID: Hello Wuyong: Innovative Micro Technology has deposition and etch capabilities for a large portion of the periodic table, including Cu. Please contact me directly for more information. Regards-Monte Monteith G. Heaton VP Marketing and Sales Innovative Micro Technology 75 Robin Hill Road * Santa Barbara, CA 93117 Ph: 805-681-2852 * Fx: 805-967-2677 info@imtmems.com * www.imtmems.com _________________________________________ "Your strategic partner for MEMS design and 6" wafer manufacturing services with 0.355m photolithography, 30,000 sq. ft. fab, and non-CMOS materials flexibility, including metals/magnetics." -----Original Message----- From: Wuyong Peng [mailto:] Sent: Thursday, March 28, 2002 9:26 AM To: mems-talk@memsnet.org Subject: [mems-talk] Cu Electric Deposition in Cleanroom? Does anyone know if there is a cleanroom that allow Cu electric deposition and etching? Thank you. Wuyong Peng MRC, NJIT _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From BobHendu@aol.com Fri Mar 29 20:08:35 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Fri, 29 Mar 2002 15:08:35 EST Subject: [mems-talk] Al oxide removal Message-ID: <123.e306a94.29d623c3@aol.com> Have you considered the possibility of plating Ni/Au prior to your functionalization? This will give you the advantage of a non oxidizing contact top layer so that your aluminum will no longer change in its contact resistance. This process can be done after your foundry and there is a clean during process that removes the Al2O3 prior to electroless Ni/Au Drop me a line if you would like more information. Bob Henderson Process Integration,LLC Phone: 480-558-1156 From michael.martin@louisville.edu Fri Mar 29 20:30:33 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Fri, 29 Mar 2002 15:30:33 -0500 Subject: [mems-talk] Pt anneal on oxide Message-ID: I am trying to put down a 1000 angstrom layer of Pt without an adhesion layer onto spin on oxide. In order to promote adhesion I "baked" the wafer at 700C for about 2 hours (ramped at 10C/min) in a tube furnace with N2 flow of about 0.5 l/min. When the sample came out it look really bizarre. Instead of the mirror like finish I'd started with, I've got a hazy transparent layer. I can see the oxide (defects and all). Was the temp too high? Metal too thin? Help! Thanks, Mike Martin From ashfaq@fh-furtwangen.de Sat Mar 30 16:05:49 2002 From: ashfaq@fh-furtwangen.de (Fahad Lodhi) Date: Sat, 30 Mar 2002 17:05:49 +0100 Subject: [mems-talk] Supreme3.0 Message-ID: <003201c1d804$c2d51da0$2dda1c8d@projiaf.fhfurtwangen.de> Hello all, does any body knows how to declare mask in the TMA Supreme3 process simulator . the problem is that i want to make a complicated mask comprising of several openings to this process simulator. is there any way to transfer the mask info from the Autocad file directly to supreme3.0 Any ideas? Thanks Fahad From yyao@snf.stanford.edu Sun Mar 31 04:24:54 2002 From: yyao@snf.stanford.edu (Yahong Yao) Date: Sat, 30 Mar 2002 20:24:54 -0800 Subject: [mems-talk] Re: photosensitive polyimides Message-ID: <3CA68F96.D5AEE135@snf.stanford.edu> Hello Bala, Try HD Microsystems. www.hdmicrosystems.com Regards, Yahong