From GimHwa@exploit-tech.com Fri Mar 1 08:26:51 2002 From: GimHwa@exploit-tech.com (GimHwa@exploit-tech.com) Date: Fri, 1 Mar 2002 16:26:51 +0800 Subject: [mems-talk] Request on market statistics of MEMS Message-ID: Dear All I am interested in getting the market statistics of Japan, Europe, Asia and North America for MEMS in the following area for the last and next 5 years drug delivery systems optical MEMs Lab-on-a-chip magnetic-optical Head RF Mems Micromotors zINclinometers injection nozzles anti-collision systems electronic noses mircorelays I would appreciate if you would point me to any sources that will provide the above information. Thank you Gim Hwa From lteyssed@altern.org Fri Mar 1 10:06:26 2002 From: lteyssed@altern.org (lteyssed@altern.org) Date: Fri, 1 Mar 2002 11:06:26 +0100 (CET) Subject: [mems-talk] Anodic bonding glass-titanium Message-ID: I tried to make anodic bonding between glass and titanium but it was unsuccessful. Have you any idea about why it didn't succeed ? Thank you in advance. From stephan.ertl@gfd-diamond.com Fri Mar 1 14:34:23 2002 From: stephan.ertl@gfd-diamond.com (Ertl, Stephan) Date: Fri, 1 Mar 2002 15:34:23 +0100 Subject: AW: [mems-talk] Request on market statistics of MEMS Message-ID: <0136AE4B85E5604FA78C08E92119ABD00A5BF7@gfd-active.gfdulm> Try TFI in Enland for Medical MEMS. Regards Stephan -----Urspr|ngliche Nachricht----- Von: GimHwa@exploit-tech.com [mailto:GimHwa@exploit-tech.com] Gesendet: Freitag, 1. Mdrz 2002 09:27 An: mems-talk@memsnet.org Betreff: [mems-talk] Request on market statistics of MEMS Dear All I am interested in getting the market statistics of Japan, Europe, Asia and North America for MEMS in the following area for the last and next 5 years drug delivery systems optical MEMs Lab-on-a-chip magnetic-optical Head RF Mems Micromotors zINclinometers injection nozzles anti-collision systems electronic noses mircorelays I would appreciate if you would point me to any sources that will provide the above information. Thank you Gim Hwa _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From handerson@kineticsgroup.com Fri Mar 1 15:55:48 2002 From: handerson@kineticsgroup.com (Anderson, Hilary) Date: Fri, 1 Mar 2002 07:55:48 -0800 Subject: [mems-talk] CMP Foundry Services Message-ID: <55AF34EDA0016E4F9A4DBF150C62C93A01E416@azexch> Try Prodeo Technologies in Phoenix. http://www.prodeotech.com/ -----Original Message----- From: Naresh Mantravadi [mailto:mvvidyasagar@hotmail.com] Sent: Thursday, February 28, 2002 10:55 AM To: mems-talk@memsnet.org Subject: [mems-talk] CMP Foundry Services Hello All, Sorry for the confusion that I created. I was actually looking for CMP Foundry Services. Please let me know if there are any service suppliers in and around Bay Area. If not in Bay Area are there any other facilities in USA which offer CMP. Most of the emails which I have got were from CMP manufacturers but I was expecting from CMP services. Your help is greatly appreciated. Vidya Sagar _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From R.Islam@EVGroup.com Fri Mar 1 16:09:47 2002 From: R.Islam@EVGroup.com (Islam Rafiqul) Date: Fri, 1 Mar 2002 09:09:47 -0700 Subject: [mems-talk] Anodic bonding glass-titanium Message-ID: <1DD2B880949BD311907B0050040C0A243DE063@MAGELLAN> Can you provide the details of your process? Temperature? Voltage time? etc... Best Regards, Rafiqul Islam EV Group Inc.- Technology- Tel: (602) 437 9492 x 118, (602)2842134 (cell),Fax: (602) 437 9435, e-mail: R.Islam@EVGroup.com web: www.EVGroup.com -----Original Message----- From: lteyssed@altern.org [mailto:lteyssed@altern.org] Sent: Friday, March 01, 2002 3:06 AM To: mems-talk@memsnet.org Subject: [mems-talk] Anodic bonding glass-titanium I tried to make anodic bonding between glass and titanium but it was unsuccessful. Have you any idea about why it didn't succeed ? Thank you in advance. _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From rshile@tmmicro.com Fri Mar 1 17:09:17 2002 From: rshile@tmmicro.com (Roger Shile) Date: Fri, 01 Mar 2002 09:09:17 -0800 Subject: [mems-talk] Anodic bonding glass-titanium Message-ID: I tried unsucessfully to bond Pyrex to a chrome film in air. However someone on this forum indicated they were able to do this in a nitrogen ambient. I understand that many metals can be andoically bonded to Pyrex. The trick may be to prevent excessive oxidation of the metal during bonding. Roger Shile >>> lteyssed@altern.org 03/01/02 02:06AM >>> I tried to make anodic bonding between glass and titanium but it was unsuccessful. Have you any idea about why it didn't succeed ? Thank you in advance. _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From lyoung@kionix.com Fri Mar 1 18:53:57 2002 From: lyoung@kionix.com (Lincoln Young) Date: Fri, 1 Mar 2002 13:53:57 -0500 Subject: [mems-talk] Fluidic Packaging In-Reply-To: Message-ID: Good Day, I am searching for plastics machining/molding companies that are targeting microfluidic packaging. We are currently looking for some companies that would be prepared to assist with the development of a number of packages for different applications. Any leads would be appreciated. Thank you, Lincoln Lincoln Young Product Engineer, Microfluidics Kionix, Inc. (Ph) 607-257-1080 ex. 197 lyoung@kionix.com From majumdar@uiuc.edu Fri Mar 1 20:40:00 2002 From: majumdar@uiuc.edu (Zigurts Majumdar) Date: Fri, 1 Mar 2002 14:40:00 -0600 (CST) Subject: [mems-talk] protection for glass etching In-Reply-To: Message-ID: Hi, Right now we're using chrome-gold-chrome layers, 100A-150A-100A to protect for glass etching. I noticed that if I do a BOE etch over 35 minutes, it starts to eat through the layers some and makes the channel edges rough. I wondered if, in addition to thicker protective layers, the preparation of the glass surface had an effect, say a SC-1/BHF clean instead of H202:H2SO4. THanks, Ziggy From abhush@yahoo.com Fri Mar 1 21:52:12 2002 From: abhush@yahoo.com (Abhinav Bhushan) Date: Fri, 1 Mar 2002 13:52:12 -0800 (PST) Subject: [mems-talk] Etch rates for all etchants In-Reply-To: Message-ID: <20020301215212.55000.qmail@web13803.mail.yahoo.com> Hi Amanpreet, This should be a good reference and an appropritate starting point Williams, K.R.; Muller, R.S. Etch rates for micromachining processing. Journal of Microelectromechanical Systems, vol.5, (no.4), IEEE, Dec. 1996. p.256-69. hope that helps, Abhinav --- Amanpreet wrote: > Hello > > I am looking for the etch rates for all the > processes and all the etchants > particularly with the anisotropic etchants and deep > reactive ion etching. If > any one can give me information about this it will > be of great help. thanks > for reading and your help > > Amanpreet Singh Yahoo! Greetings - Send FREE e-cards for every occasion! http://greetings.yahoo.com From abhush@yahoo.com Fri Mar 1 21:59:46 2002 From: abhush@yahoo.com (Abhinav Bhushan) Date: Fri, 1 Mar 2002 13:59:46 -0800 (PST) Subject: [mems-talk] issues related to integartion of MEMS with electronics In-Reply-To: <002e01c1c035$7ac0a610$77c809c0@manoj> Message-ID: <20020301215946.56343.qmail@web13803.mail.yahoo.com> temperature will be one for sure. Other parameters will depend upon the mems product and the electronics that you are integrating it with. what kind of electronics is it, cmos, ? Equipment needs should be thought out carefully, based upon 'your' requirements. sometimes an in-house equipment provides a faster/cost-effective solution. Again, it all depends upon the application. hope that helps, Abhinav --- Manoj Wadhwa wrote: > Hello! > > Our company semiconductor complex ltd, India is > diversifying into > manufacturing of MEMS devices. We are in the process > of finalising the > equipment required. > > Can anyone suggest what are issues related to > integartion of MEMS with > electronics? Will we require some specific equipment > to resolve these issues? > > Thanks, > > Manoj Wadhwa > Manager - VLSI > SCL - INDIA > WEB : www.sclindia.com/fab.html > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe > or change your list > options, visit > http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS > processing services. > Visit us at http://www.mems-exchange.org/ Yahoo! Greetings - Send FREE e-cards for every occasion! http://greetings.yahoo.com From abhush@yahoo.com Fri Mar 1 22:05:09 2002 From: abhush@yahoo.com (Abhinav Bhushan) Date: Fri, 1 Mar 2002 14:05:09 -0800 (PST) Subject: [mems-talk] Anodic bonding glass-titanium In-Reply-To: Message-ID: <20020301220509.76494.qmail@web13807.mail.yahoo.com> can you divulge some details of the process? temperature, thickness of Ti layer, cleaning method, time, force, contact area, glass type... Abhinav --- lteyssed@altern.org wrote: > I tried to make anodic bonding between glass and > titanium but it was unsuccessful. Have you any idea > about why it didn't succeed ? > > Thank you in advance. Yahoo! Greetings - Send FREE e-cards for every occasion! http://greetings.yahoo.com From rogerbr@earthlink.net Sat Mar 2 01:57:29 2002 From: rogerbr@earthlink.net (Roger Brennan) Date: Fri, 1 Mar 2002 17:57:29 -0800 Subject: [mems-talk] black wax Message-ID: <01C1C14A.8E532980.rogerbr@earthlink.net> In case you are still interested in black wax, the following is supposed to be a good substitute for TCE. I undestand TCE (and TCA) are not considered evironmentally friendly these days. The commercial name is "HyperSolve". I understand it is n-propyl bromide (1-bromopropane) with some secret additive. Here's one contact for it. Grant Moskowitz Aviation and Defense Team Leader Phone: 619-269-8930 Fax: 619-269-8932 4843 Voltaire Street, Suite A San Diego, CA 92107 email: gmoskowitz@ecolink.com Visit our new web site: www.ecolink.com PS: I'm going to look into the Enthone OMI "stop-off Number 1". -----Original Message----- From: Karl Cazzini [SMTP:karlcazzini@rcn.com] Sent: Tuesday, February 26, 2002 10:38 AM To: mems-talk@memsnet.org Subject: Re: [mems-talk] black wax A much better masking material Enthone OMI "stop-off Number 1". This material is a green paint on polymeric compound which dries quickly and is completley resistant to acids and bases. It is EASILY removed, and simply peels off like a rubber sheet - no residuals. I have used the Apiezon "Black Wax" material, but not with the same degree of satisfaction (especially upon removal - it leaves residuals). K. Cazzini (Ph.D) Senior Scientist Alcon Research Ltd. > > From: "ABHIJAT GOYAL" > Date: 2002/02/25 Mon PM 10:12:59 EST > To: mems-talk@memsnet.org > Subject: [mems-talk] black wax > > Hi, > > can you please suggest me some vendors for Black Wax as a mask for KOH etch. > Can you please tell me the vendors that are based in US only, since it will be > difficult for me to procure my order if they are outside the US. > > Also can you please suggest me something by which I can remove black wax after I have etched. > > Thanks in advance, > > Abhijat Goyal > > > Abhijat Goyal > EE MEMS group, > MS candidate, > Dept. Of Electrical Engineering, > State College, PA > > Ph: (R)814-2350917 > (O)814-8653664 > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From helvoort2@hotmail.com Sat Mar 2 12:09:04 2002 From: helvoort2@hotmail.com (Antonius Helvoort) Date: Sat, 02 Mar 2002 12:09:04 +0000 Subject: [mems-talk] Anodic bonding glass-titanium Message-ID: Reply to lteyssed@altern.org, "Anodic bonding glass-titanium" Hi "lteyssed", Why some metals bond well and others does not to glass by electrostatic bonding is an interesting question. I can only give you some thoughts and references: The first step in the bonding process is to create an electrostatic force pulling the materials into intimate contact. If the metal is non-blocking (providing metal ions to the glass), the charge build-up is too low and thereby the electrostatic force is too low. This is clearly the case for Ag. In the final step, anodic oxidation is thought to be necessary to get a strong and permanent bond. It could be that the metal does not oxidize (like Pt, but Ti will oxidize) or the properties of the oxide layer are not ideal (i.e. brittle, poor adherence to one or both parent materials or it is conductive). As far as I know (if Im not correct please someone correct me), there are only three reports about Ti anodic bonding. Two say possible (G. Wallis, D.I. Pomerantz, J. Appl. Phys., 1969, 40, 3946 and G. Wallis, Electrocomponent Sci.Techn., 1975, 2, 45.) and one says tried but does not report successful bonding (W.Y. Lee, F. Sequeda, D. Chapman, J Salem, Appl. Phys. Let., 1987, 50, 522.). Good luck, Ton van Helvoort Cambridge, UK >From: >Reply-To: mems-talk@memsnet.org >To: mems-talk@memsnet.org >Subject: [mems-talk] Anodic bonding glass-titanium >Date: Fri, 1 Mar 2002 11:06:26 +0100 (CET) > >I tried to make anodic bonding between glass and titanium but it was >unsuccessful. Have you any idea about why it didn't succeed ? > >Thank you in advance. _________________________________________________________________ Chat with friends online, try MSN Messenger: http://messenger.msn.com From rpooran@uark.edu Sun Mar 3 01:28:22 2002 From: rpooran@uark.edu (Ryan D. Pooran) Date: Sat, 2 Mar 2002 19:28:22 -0600 Subject: [mems-talk] Smooth KOH etching Message-ID: <000001c1c252$b8d63f40$7f0eb882@delta> Good day all, Recently I did a KOH etching of Si to make a thin diaphragm to be used as a pressure sensor. The diaphragm that was etched was very rough on the backside. Does anyone know how I can etch Si so it gives an almost perfect smooth surface? Thank you. Ryan Ryan D. Pooran Graduate Student Microelectronics- Photonics Graduate Program University of Arkansas 248 Physics Building Fayetteville, AR 72701 Ph: 501-575-5596(O) Ph: 501-575-4150(L) Email: rpooran@uark.edu From bdevarajan@hotmail.com Sun Mar 3 20:45:17 2002 From: bdevarajan@hotmail.com (Devarajan Balaraman) Date: Sun, 03 Mar 2002 15:45:17 -0500 Subject: [mems-talk] Plasm-therm RIE temperature Message-ID: Hi, Deos anyone know how hot the substrate gets inside an RIE chamber when you are etching at a power of say 150 W. Thanks. Dev __________________________________________________________________________ ------------------------------------------------------------------------ Chat with friends online, try MSN Messenger: Click Here From yseom@etri.re.kr Mon Mar 4 01:19:45 2002 From: yseom@etri.re.kr (yseom@etri.re.kr) Date: Mon, 4 Mar 2002 10:19:45 +0900 Subject: [mems-talk] How to hold micro size ball lens in the v-hole on the silicon waf er? Message-ID: <8470181DABD5D511B3E700D0B7A8AC4A9CC7DC@cms3.etri.re.kr> Hi all I would know how to hold ball lens with micro size in the V-groove performed on the silicon wafer. The length of V-groove is same with the its width. In order to hold ball lens on the silicon wafer if you have to use the powder or liquid polymer materials, please let me know what kind of material is good for this work. Thank you in advance. YongSung Eom, Ph. D Optical Module Packaging Team Electronics and Telecommunciations Research Institute Tel.: 042-860-5547 Fax.: 042-860-6836 E-mail: yseom@etri.re.kr From dkm@ece.iitkgp.ernet.in Mon Mar 4 17:15:24 2002 From: dkm@ece.iitkgp.ernet.in (Devendra Kumar Maurya) Date: Mon, 4 Mar 2002 12:15:24 -0500 (EST) Subject: [mems-talk] single crystal quartz substrate provider Message-ID: Hello all, Does someone know a provider of Z- cut single crystal quartz substrate few specification i am mentioning i.e length- along y axis (mechanical axis) width- along X axis (electrical axis) thickness (150 micron)- along Z direction (optical axis). with regards ****************************** Devendra Kumar Maurya scientific officer Microelectronics Centre Advanced Tech. Centre Department of Electronics& ECE Indian Institute of Technology Kharagpur- 721302,India ****************************** Phone: 91-3222-81479(O) Fax : 91-3222-755303 EMail: dkm@ece.iitkgp.ernet.in ****************************** From sgblanco@elec.gla.ac.uk Mon Mar 4 11:51:55 2002 From: sgblanco@elec.gla.ac.uk (Sonia Garcia Blanco) Date: Mon, 4 Mar 2002 11:51:55 +0000 (GMT) Subject: [mems-talk] Differential GeO2/SiO2 wet etch rate. In-Reply-To: <1FEDB520CA46D411AD2300508B9A3B1768E6FF@EXCHANGE> Message-ID: Dear All! I wanted to wet etch silica glass doped with GeO2 using 4:1 buffered HF. I was wondering if anybody could tell me the differential etch rate (if any) between GeO2 and SiO2 in HF. Thank you very much again for your help!! Best regards, Sonia. ***************************************************** Sonia Garcia-Blanco Department of Electronics and Electrical Engineering University of Glasgow Oakfield Ave. G12 8LT Glasgow Phone: Office: (0141) 339 8855 ext 0101 Lab: (0141) 330 6014 Email: sgblanco@elec.gla.ac.uk **************************************************** From Philip.KlauderJr@sea.siemens.com Mon Mar 4 15:17:52 2002 From: Philip.KlauderJr@sea.siemens.com (Klauder, Jr., Philip R.) Date: Mon, 4 Mar 2002 10:17:52 -0500 Subject: [mems-talk] Smooth KOH etching Message-ID: I may be jumping to conclusions but- Were you using a wafer polished on both sides? If so, who was your wafer supplier- If they are not double polishing experts, they may be introducing a lot of mechanical damage to the wafer that shows up as etch defects. How deep are you etching each side? Are you getting good agitation on both sides? Phil Klauder 215-646-7400 x2151 -----Original Message----- From: Ryan D. Pooran [mailto:rpooran@uark.edu] Sent: Saturday, March 02, 2002 8:28 PM To: mems-talk@memsnet.org Subject: [mems-talk] Smooth KOH etching Good day all, Recently I did a KOH etching of Si to make a thin diaphragm to be used as a pressure sensor. The diaphragm that was etched was very rough on the backside. Does anyone know how I can etch Si so it gives an almost perfect smooth surface? Thank you. Ryan Ryan D. Pooran Graduate Student Microelectronics- Photonics Graduate Program University of Arkansas 248 Physics Building Fayetteville, AR 72701 Ph: 501-575-5596(O) Ph: 501-575-4150(L) Email: rpooran@uark.edu _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From hychan@acae.cuhk.edu.hk Mon Mar 4 15:38:20 2002 From: hychan@acae.cuhk.edu.hk (Hoyin) Date: Mon, 4 Mar 2002 23:38:20 +0800 Subject: [mems-talk] Problem in etching Al and Pt Message-ID: <00b401c1c392$9cd30080$0100a8c0@hoyin1> Hi all, I have got a simple question. I want to sacrifically release my = device by etching Al. However, one of the layer is Pt. Will the Al = etchant etch Pt ??? What etchant do you suggest?? Thank you very much!!! Hoyin From kasmith2@ix.netcom.com Mon Mar 4 15:22:54 2002 From: kasmith2@ix.netcom.com (Kenneth Smith) Date: Mon, 04 Mar 2002 07:22:54 -0800 Subject: [mems-talk] single crystal quartz substrate provider References: Message-ID: <3C83914E.9020700@ix.netcom.com> Try Mark-optics in California, USA http://www.markoptics.com email mailto:julie@markoptics.com Regards, Ken Smith Kmbh Associates 47 Rocket Circle Rancho Cordova, CA 95742 U S A 510-714-5055 Efax- 510 217 4421 or 561 658 6136 High Purity Float Zone and Specialty CZ Silicon for Power, IR and Mirror Optics, Optoelectronics, MEMS, SOI, and other Semiconductor applications. Service in SOI, Polishing SSP and DSP. Quartz, Glass, Pyrex and Borofloat Wafer Supply. Anodic Bonding. SOG, SOS. Devendra Kumar Maurya wrote: > Hello all, > Does someone know a provider of > Z- cut single crystal quartz substrate > few specification i am mentioning i.e > length- along y axis (mechanical axis) > width- along X axis (electrical axis) > thickness (150 micron)- along Z direction (optical axis). > > with regards > ****************************** > Devendra Kumar Maurya > scientific officer > Microelectronics Centre > Advanced Tech. Centre > Department of Electronics& ECE > Indian Institute of Technology > Kharagpur- 721302,India > > ****************************** > Phone: 91-3222-81479(O) > Fax : 91-3222-755303 > EMail: dkm@ece.iitkgp.ernet.in > ****************************** From thinkerberry@hotmail.com Mon Mar 4 17:12:20 2002 From: thinkerberry@hotmail.com (Ken Kwon) Date: Mon, 04 Mar 2002 09:12:20 -0800 Subject: [mems-talk] TiO2 etch Message-ID: Hi, does anybody know how to etch TiO2? How do you do wet etch on TiO2 and how do you do dry etch on TiO2? Thanks for your time Ken. _________________________________________________________________ Send and receive Hotmail on your mobile device: http://mobile.msn.com From nbalu@blr.vsnl.net.in Mon Mar 4 17:26:28 2002 From: nbalu@blr.vsnl.net.in (N.Balasubramanian) Date: Mon, 4 Mar 2002 22:56:28 +0530 Subject: [mems-talk] clean room Message-ID: <001401c1c3a1$e39183c0$adbcc5cb@vsnl.net.in> can you please tell me wmich MEMS operations require a clean room and which do not and why. For example do you need a clean room to do microstereolithography Thank you Balu Dr N Balasubramanian (india) From wstonas@surromed.com Mon Mar 4 18:58:46 2002 From: wstonas@surromed.com (Walter Stonas) Date: Mon, 4 Mar 2002 10:58:46 -0800 Subject: [mems-talk] clean room Message-ID: Hi Dr N Balasubramanian, All front end operations need a clean room as well as some back end. A clean roon is designed to minimize particles and contamination from contacting the wafers and devices. One could also use a controlled environment which is an area with no raised floors and HEPA filters as well as clean room suits to minimize contamination. This is less costly than a true clean room an is being used in the manufacturing of biological chips. The class of clean room required is dependant on the CD (critical dimension) of your devices. SEMI has information of classes of cleanrooms at thier site SEMI.org. Sincerely, Walter Stonas Process Development Engineer -----Original Message----- From: N.Balasubramanian [mailto:nbalu@blr.vsnl.net.in] Sent: Monday, March 04, 2002 9:26 AM To: mems-talk@memsnet.org Subject: [mems-talk] clean room can you please tell me wmich MEMS operations require a clean room and which do not and why. For example do you need a clean room to do microstereolithography Thank you Balu Dr N Balasubramanian (india) _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From dan.w.chilcott@delphiauto.com Mon Mar 4 18:10:11 2002 From: dan.w.chilcott@delphiauto.com (dan.w.chilcott@delphiauto.com) Date: Mon, 4 Mar 2002 13:10:11 -0500 Subject: [mems-talk] Smooth KOH etching Message-ID: <05256B72.0063D381.00@notes.delphiauto.com> Ryan- There are several papers on this subject. In general, a KOH etched surface improves in roughness as you increase the concentration. Of course, this increases the etch rate of your mask as well. Increasing the concentration also diminishes diffusion effects( When etching deep cavities in low concentration etchants, the center of the cavity will etch at a different rate than the edges). Using greater than 30% by wt. KOH with water should give you a smooth surface. Intentional or unintentional additives can affect the surface quality. The additional of various alcohols will change the etch properties. In addition, contaminates such as iron in the solution can affect the surface of the etch. "Ryan D. Pooran" on 03/02/2002 08:28:22 PM Please respond to mems-talk@memsnet.org To: mems-talk@memsnet.org cc: (bcc: Dan W Chilcott/DELCO) Subject: [mems-talk] Smooth KOH etching Good day all, Recently I did a KOH etching of Si to make a thin diaphragm to be used as a pressure sensor. The diaphragm that was etched was very rough on the backside. Does anyone know how I can etch Si so it gives an almost perfect smooth surface? Thank you. Ryan Ryan D. Pooran Graduate Student Microelectronics- Photonics Graduate Program University of Arkansas 248 Physics Building Fayetteville, AR 72701 Ph: 501-575-5596(O) Ph: 501-575-4150(L) Email: rpooran@uark.edu _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ Received: from plmlir4.mail.eds.com ([205.191.22.44]) by ustryg98.delphiauto.net (Lotus SMTP MTA v4.6.7 (934.1 12-30-1999)) with SMTP id 05256B72.0052BE01; Mon, 4 Mar 2002 10:03:46 -0500 Received: from plmler3.mail.eds.com (plmler3.mail.eds.com [199.228.142.73]) by plmlir4.mail.eds.com (8.11.6/8.11.3) with ESMTP id g24F4LK06261 for ; Mon, 4 Mar 2002 09:04:21 -0600 (CST) Received: from kronos.mems-exchange.org (kronos.mems-exchange.org [132.151.8.1]) by plmler3.mail.eds.com (8.11.6/8.11.3) with ESMTP id g24Ew6P31170 for ; Mon, 4 Mar 2002 08:58:06 -0600 Received: from localhost ([127.0.0.1] helo=kronos.mems-exchange.org) by kronos.mems-exchange.org with esmtp (Exim 3.12 #1) id 16htud-0006H8-00; Mon, 04 Mar 2002 09:58:03 -0500 Received: from mail.uark.edu ([130.184.5.107]) by kronos.mems-exchange.org with esmtp (Exim 3.12 #1) id 16hKnp-0006oQ-00 for mems-talk@memsnet.org; Sat, 02 Mar 2002 20:28:41 -0500 Received: from delta ([130.184.14.127]) by mail.uark.edu (Netscape Messaging Server 4.15) with ESMTP id GSDIRQ01.W78 for ; Sat, 2 Mar 2002 19:28:38 -0600 From: "Ryan D. Pooran" To: Message-ID: <000001c1c252$b8d63f40$7f0eb882@delta> MIME-Version: 1.0 Content-Type: text/plain; charset="us-ascii" Content-Transfer-Encoding: 7bit X-Mailer: Microsoft Outlook, Build 10.0.2627 Subject: [mems-talk] Smooth KOH etching Sender: mems-talk-admin@memsnet.org Errors-To: mems-talk-admin@memsnet.org X-BeenThere: mems-talk@memsnet.org X-Mailman-Version: 2.0.8 Precedence: bulk Reply-To: mems-talk@memsnet.org List-Unsubscribe: , List-Id: General MEMS discussion List-Post: List-Help: List-Subscribe: , List-Archive: Date: Sat, 2 Mar 2002 19:28:22 -0600 |---------------------------------------> |USTRYG98/us/delphiauto | |USTRYH99/us/delphiauto | |USKOKH99/us/delphiauto | |USKOKHM1/DELCO | |USKOKM08/DELCO | |---------------------------------------> >---------------------------------------| |03/04/2002 10:03:51 AM - 03/04/2002 | |10:03:51 AM | |03/04/2002 10:03:51 AM - 03/04/2002 | |10:04:00 AM | |03/04/2002 10:04:02 AM - 03/04/2002 | |10:04:06 AM | |03/04/2002 10:04:02 AM - 03/04/2002 | |10:04:04 AM | |03/04/2002 10:04:05 AM - 03/04/2002 | |10:04:06 AM | >---------------------------------------| From kirt_williams@agilent.com Mon Mar 4 19:22:04 2002 From: kirt_williams@agilent.com (kirt_williams@agilent.com) Date: Mon, 4 Mar 2002 11:22:04 -0800 Subject: [mems-talk] Plasm-therm RIE temperature Message-ID: > Does anyone know how hot the substrate gets inside an RIE chamber when > you are etching at a power of say 150 W? The temperature varies greatly, depending on the thermal contact to the back side of the wafer, the thermal conductivity of the wafer, how exothermic the reaction is, exposed area, and other parameters. It may vary from wafer to wafer for your process. It can be measured by placing temperature dots (available from Omega) on the wafer. These turn dark when a threshold temperature is reached and are available in a range of temperatures. Your temperature is probably in the range of 50 C to 150 C. After placing a temperature dot, cover it with a little piece of Kapton tape. Poke a hole through the tape to allow air to escape in the vacuum chamber. --Kirt Williams Agilent Technologies From tah@mems.caltech.edu Mon Mar 4 19:25:00 2002 From: tah@mems.caltech.edu (Ted Harder) Date: Mon, 4 Mar 2002 11:25:00 -0800 Subject: [mems-talk] Smooth KOH etching In-Reply-To: <000001c1c252$b8d63f40$7f0eb882@delta> Message-ID: You also need to make sure you are using IPA as a surfactant. Read "Etching roughness for (100) silicon surfaces in aqueous KOH", Palik et al., J. Appl. Phys., v.70, p.3291. Ted Harder Research Assistant tah@mems.caltech.edu Caltech Micromachining Lab http://mems.caltech.edu Caltech 136-93 ofc: (626) 395-3469 Pasadena, CA 91125 fax: (626) 584-9104 -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of Ryan D. Pooran Sent: Saturday, March 02, 2002 5:28 PM To: mems-talk@memsnet.org Subject: [mems-talk] Smooth KOH etching Good day all, Recently I did a KOH etching of Si to make a thin diaphragm to be used as a pressure sensor. The diaphragm that was etched was very rough on the backside. Does anyone know how I can etch Si so it gives an almost perfect smooth surface? Thank you. Ryan Ryan D. Pooran Graduate Student Microelectronics- Photonics Graduate Program University of Arkansas 248 Physics Building Fayetteville, AR 72701 Ph: 501-575-5596(O) Ph: 501-575-4150(L) Email: rpooran@uark.edu _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From John.Vig@mail1.monmouth.army.mil Mon Mar 4 19:48:10 2002 From: John.Vig@mail1.monmouth.army.mil (Vig, John Dr CECOM RDEC C2D) Date: Mon, 4 Mar 2002 14:48:10 -0500 Subject: [mems-talk] FW: mems-talk digest, Vol 1 #211 - 18 msgs Message-ID: Re: mems-talk digest, Vol 1 #211, From: Devendra Kumar Maurya Subject: [mems-talk] single crystal quartz substrate provider Try: Hoffman Materials, Inc. Carlisle, PA, USA http://www.hoffmanmaterials.com/ and Sawyer Research Products, Eastlake, OH, USA .............John Vig From rshile@tmmicro.com Mon Mar 4 19:56:45 2002 From: rshile@tmmicro.com (Roger Shile) Date: Mon, 04 Mar 2002 11:56:45 -0800 Subject: [mems-talk] protection for glass etching Message-ID: I've been using 1200 Angstroms of Cr as a mask for etching Pyrex to a depth of 5 microns with BOE. (Photoresist wouldn't adhere well to the Pyrex). The Cr seems to hold up fine during this 3 hour etch. However the BOE undercuts the Cr ~16 microns for a 5 micron etch depth. I don't know if this is due to poor adhesion of the Cr or something else. If you can tolerate this sort of undercut, perhaps a thicker Cr layer will solve your problem. I recently tried etching the Pyrex by SF6/O2 RIE which reduced the 5 micron etch time to 1 hour, with ~1 micron of undercut. Roger Shile >>> majumdar@uiuc.edu 03/01/02 12:40PM >>> Hi, Right now we're using chrome-gold-chrome layers, 100A-150A-100A to protect for glass etching. I noticed that if I do a BOE etch over 35 minutes, it starts to eat through the layers some and makes the channel edges rough. I wondered if, in addition to thicker protective layers, the preparation of the glass surface had an effect, say a SC-1/BHF clean instead of H202:H2SO4. THanks, Ziggy _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From herricka@wharton.upenn.edu Mon Mar 4 20:11:06 2002 From: herricka@wharton.upenn.edu (Andrew Herrick) Date: Mon, 4 Mar 2002 15:11:06 -0500 Subject: [mems-talk] I am interested to talk to a researcher at PARC Message-ID: <003a01c1c3b8$bd8085c0$e001fc9e@BAH207408> Dear Mems-User Group, Please forgive my non-technical posting... I am an MBA student at the Wharton School at UPenn, and am currently applying for a business-related summer internship at PARC. In a previous life, I studied physics at the Australian National University and did my final research paper on silicon etching. This sounds similar in some ways to the work PARC is doing in the MEMS area, and I would love to talk to anyone working there to learn more about what they are doing in this field, and the kinds of issues they are facing. If anyone is inclined to talk to me, my email address is herricka@wharton.upenn.edu. Even a few minutes of your time would be very valuable. Thank you all for your time, and best wishes. Andrew Herrick From rdean@Eng.Auburn.EDU Mon Mar 4 20:38:42 2002 From: rdean@Eng.Auburn.EDU (Robert Dean) Date: Mon, 04 Mar 2002 14:38:42 -0600 Subject: [mems-talk] PCB MEMS Session of the IMAPS MEMS Advanced Technology Workshop In-Reply-To: Message-ID: <3.0.5.32.20020304143842.00ac66d0@pophost.eng.auburn.edu> Hello, The call for papers for the IMAPS "3rd Advanced Technology Workshop on Packaging of MEMS and Related Micro Integrated Nano Systems" has been released. The deadline is March 15th. The information is available at: http://www.imaps.org/callfor/mems2002.htm. I am the session chairman for the session devoted to PCB/laminate MEMS. I am relaying this information to the group because so many people have contacted me about it. If you submit an abstract, put "PCB MEMS" as the suggested session. Thanks. Sincerely, Robert Dean Research Associate IV Center for Advanced Vehicle Electronics Auburn University 200 Broun Hall Auburn, AL 36849 Voice: 334-844-1838 Fax: 334-844-1898 Email: rdean@eng.auburn.edu From rdean@Eng.Auburn.EDU Mon Mar 4 20:56:21 2002 From: rdean@Eng.Auburn.EDU (Robert Dean) Date: Mon, 04 Mar 2002 14:56:21 -0600 Subject: [mems-talk] MEMS pictures/movie clips Message-ID: <3.0.5.32.20020304145621.00ac7ea0@pophost.eng.auburn.edu> Hello, I am giving a free 3 hour short course on MEMS in April to the corporate sponsors of the research center I work at. I am looking for interesting photographs and/or PowerPoint movie clips that I can show during my presentation of example MEMS devices. I will gladly credit your company/organization during the presentation. This could be an excellent opportunity to freely advertise your work/products to the automobile manufacture/supplier industry. Thanks. Sincerely, Robert Dean Research Associate IV Center for Advanced Vehicle Electronics Auburn University 200 Broun Hall Auburn, AL 36849 Voice: 334-844-1838 Fax: 334-844-1898 Email: rdean@eng.auburn.edu From lhunter@EECS.Berkeley.EDU Mon Mar 4 22:10:32 2002 From: lhunter@EECS.Berkeley.EDU (lhunter@EECS.Berkeley.EDU) Date: Mon, 04 Mar 2002 14:10:32 -0800 Subject: [mems-talk] MEMS pictures/movie clips Message-ID: <1c13091c3b60.1c3b601c1309@EECS.Berkeley.EDU> Check Sandia's site for some cool movies of some of the things they've built. Maybe it's not very applicable to the auto industry but there are some pretty complex systems that they've built. http://mems.sandia.gov I'm not sure what their policy is on using the photos and clips but I think they're pretty liberal with them. ----- Original Message ----- From: Robert Dean Date: Monday, March 4, 2002 12:56 pm Subject: [mems-talk] MEMS pictures/movie clips > Hello, > > I am giving a free 3 hour short course on MEMS in April to the > corporatesponsors of the research center I work at. I am looking > for interesting > photographs and/or PowerPoint movie clips that I can show during my > presentation of example MEMS devices. I will gladly credit your > company/organization during the presentation. This could be an > excellentopportunity to freely advertise your work/products to the > automobilemanufacture/supplier industry. Thanks. > > Sincerely, > > > Robert Dean > > Research Associate IV > Center for Advanced Vehicle Electronics > Auburn University > 200 Broun Hall > Auburn, AL 36849 > > Voice: 334-844-1838 > Fax: 334-844-1898 > Email: rdean@eng.auburn.edu > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems- > talkHosted by the MEMS Exchange, providers of MEMS processing > services.Visit us at http://www.mems-exchange.org/ From yingkailiu@hotmail.com Mon Mar 4 22:47:49 2002 From: yingkailiu@hotmail.com (Yingkai Liu) Date: Mon, 04 Mar 2002 17:47:49 -0500 Subject: [mems-talk] polySi deposition Message-ID: Hi! there, We have some 4-inch wafers for polySi deposition. Does anybody know that some company/lab can provide the service? Any information would be greatly appreciated. Thanks and regards, Yingkai Liu ********************************************** Graduate Research Assistant * Department of Mechanical Engineering * University of Maryland * College Park, MD 20742 ************************************* Tel: (301)405-7630 * Fax: (301)314-9477 * *********************************************** _________________________________________________________________ Join the worlds largest e-mail service with MSN Hotmail. http://www.hotmail.com From Ultrasil@aol.com Tue Mar 5 01:55:59 2002 From: Ultrasil@aol.com (Ultrasil@aol.com) Date: Mon, 4 Mar 2002 20:55:59 EST Subject: [mems-talk] CMP Vendors Message-ID: <9a.21b6bada.29b57faf@aol.com> In a message dated 2/28/02 7:33:39 AM Pacific Standard Time, kirt_williams@agilent.com writes: Ultrasil corporation can do any speciality service for your polishing needs Please Contact us or visit our home page at www.ultrasil.com Also we are the larger producer of SOI thick film wafers by fusion bonding. We have in stock for immediate delivery excess inventory priced at discount rate. John > mems-talk@memsnet.org > To:mems-talk@memsnet.org > John Dancovich 3527 Breakwater Ave Hayward CA 94545 Phone: 510-266-3700 Fax: 510-266-3720 e-mail: ultrasil@aol.com [demime 0.98e removed an attachment of type application/zip which had a name of Inventory SOI 2-41.ZIP] From buduri@lycos.com Tue Mar 5 07:14:54 2002 From: buduri@lycos.com (kumar m.v.n buduri) Date: Tue, 05 Mar 2002 01:14:54 -0600 Subject: [mems-talk] Teflon coated pyrex glass wafer bonding Message-ID: Hai I would like to know how two pyrex glass wafers spin coated with teflon AF 1600/2400 can be bonded.(both bonded sides are coated with teflon).Please provide me with details of recepie/procedure. thank you 2,000,000,000 Web Pages--you only need 1. Save time with My Lycos. http://my.lycos.com From knut.lian@sensonor.no Tue Mar 5 08:18:07 2002 From: knut.lian@sensonor.no (Knut Lian) Date: Tue, 5 Mar 2002 09:18:07 +0100 Subject: [mems-talk] Fluidic Packaging Message-ID: <6DBA18B99E7F7846BA8F4065F828D7A5209E09@sensonor20.sensonor. no> Try FICO in The Netherlands. www.fico.nl Regards Knut Lian Process Engineer Wafer Fab Technology SensoNor asa PO Box 196, N-3192 Horten Norway http:\\www.sensonor.com Tel: +47 33 03 50 68 Fax: +47 33 03 51 05 -----Original Message----- From: Lincoln Young [mailto:lyoung@kionix.com] Sent: 1. mars 2002 19:54 To: mems-talk@memsnet.org Subject: [mems-talk] Fluidic Packaging Good Day, I am searching for plastics machining/molding companies that are targeting microfluidic packaging. We are currently looking for some companies that would be prepared to assist with the development of a number of packages for different applications. Any leads would be appreciated. Thank you, Lincoln Lincoln Young Product Engineer, Microfluidics Kionix, Inc. (Ph) 607-257-1080 ex. 197 lyoung@kionix.com _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From dalog.michal@railproject.sk Tue Mar 5 17:52:35 2002 From: dalog.michal@railproject.sk (Michal Dalog) Date: Tue, 5 Mar 2002 09:52:35 -0800 Subject: [mems-talk] Teflon foil Message-ID: <001101c1c46e$a09ec190$8408a8c0@railproject.sk> Hi Heiko van der Linden. Try this page http://www.rmbal.sk/produkt3.html Yours sincerely Michal Dalog. From Niels.Olij@Alcatel-optronics.nl Tue Mar 5 12:25:08 2002 From: Niels.Olij@Alcatel-optronics.nl (Niels Olij) Date: Tue, 5 Mar 2002 13:25:08 +0100 Subject: [mems-talk] Anodic bonding glass-titanium Message-ID: <696DAA9CDF1DD511982000508BAEC5743CFB00@enschedemail.aonl> Hi, I've done experiments with anodic bonding on Au and this worked well. Aluminum is known that it also works, but I did not try it. Niels Olij Alcatel Optronics Netherlands From NirP@phone-or.com Tue Mar 5 14:54:24 2002 From: NirP@phone-or.com (Nir Pernat) Date: Tue, 5 Mar 2002 16:54:24 +0200 Subject: [mems-talk] quarts wafers Message-ID: Anyone interesting in 20 4" quartz wafers ? Please contact me ----------------------------------- Nir Pernat Process Development Engineer Phone-Or Ltd. 17 Hatasia St. P.O Box 323 Or-Yahuda 60252 Israel Tel: +972-3-634-4488 (ext. 172) Fax: +972-3-634-9292 www.phone-or.com From m_aslammalik@yahoo.com Tue Mar 5 15:02:58 2002 From: m_aslammalik@yahoo.com (aslam muhammad) Date: Tue, 5 Mar 2002 07:02:58 -0800 (PST) Subject: [mems-talk] EPI layer Etching Message-ID: <20020305150258.774.qmail@web10802.mail.yahoo.com> i have got silicon <100> wafers with EPI layer of Ar. I want to etch through the silicon wafer to make some windows but EPI works as etch stop(i think). How can I etch EPI layer with wet etchant like TMAH. If i keep on etching the wafer, EPI layer etches very slowly but my mask ( SiO2 ) etches rapidly as compared to EPI layer. Is there any body to help, Please. Thanks M. Aslam Try FREE Yahoo! Mail - the world's greatest free email! http://mail.yahoo.com/ From BobHendu@aol.com Tue Mar 5 15:23:36 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Tue, 5 Mar 2002 10:23:36 EST Subject: [mems-talk] Plasm-therm RIE temperature Message-ID: <163.9ce7fe1.29b63cf8@aol.com> Depending on the amount of time that the substrate is in the plasma it could reach temperatures of >125 degrees C. Bob Henderson From beall@boulder.nist.gov Tue Mar 5 15:35:00 2002 From: beall@boulder.nist.gov (Jim Beall) Date: Tue, 5 Mar 2002 08:35:00 -0700 Subject: [mems-talk] silicon 'rounding' etch Message-ID: Greetings - We are looking for a wet etch to round or smooth the knife edges formed at the bottom edges of KOH etched through-holes in silicon. Something that preferentially attacks sharp points would be preferable. Plasma/RIE etches involving CF4, SF6, CHF3, O2 are also possible. Any hints would be appreciated. Jim -- - Jim Beall 303-497-5989 beall@boulder.nist.gov From hzeng@ece.uic.edu Wed Mar 6 02:03:00 2002 From: hzeng@ece.uic.edu (Hongjun Zeng) Date: Tue, 5 Mar 2002 18:03:00 -0800 Subject: [mems-talk] Pt deposition on glass or silicon In-Reply-To: Message-ID: Dear all, I'm trying to fabricate platinum electrodes on glass or silicon wafers. Originally, adopting Ti or Cr as adhesion layer can improve the adhesion of platinum on the substrate, but now my electrodes will be used for electroanalysis and don't want any active metal. So, 1. Is there any method to deposit platinum directly on glass or silicon with enough adhesion? 2. Or, if without platinum electrode, is there any other material which is chemically stable enough patterned on Si or glass to electrolyze water. Thanks a lot, Hongjun Zeng Microfabrication Applications Laboratory (MAL) University of Illinois at Chicago ERF Building, 842 W. Taylor Street Chicago, IL 60607-7022 Room 3014 ERF Tel.: 312-413-5889, Fax: 312-996-6465 From kasmith2@ix.netcom.com Wed Mar 6 00:11:50 2002 From: kasmith2@ix.netcom.com (Kenneth Smith) Date: Tue, 05 Mar 2002 16:11:50 -0800 Subject: [mems-talk] EPI layer Etching References: <20020305150258.774.qmail@web10802.mail.yahoo.com> Message-ID: <3C855EC6.1080008@ix.netcom.com> I guess first question would be why not get wafers without the epi. The easiest way to remove the Epi would be to Polish it off and can be done relatively cheap and with some level of control, assuming that the thickness is known. to remove with etch, KOH or Acid type etch would be needed, and then removal would be on both sides if back is bare as well. Ken aslam muhammad wrote: > i have got silicon <100> wafers with EPI layer of Ar. > I want to etch through the silicon wafer to make some > windows but EPI works as etch stop(i think). How can > I etch EPI layer with wet etchant like TMAH. If i > keep on etching the wafer, EPI layer etches very > slowly but my mask ( SiO2 ) etches rapidly as compared > to EPI layer. Is there any body to help, Please. > > Thanks > > M. Aslam -- Kmbh Associates 47 Rocket Circle Rancho Cordova, CA 95742 U S A 510-714-5055 Efax- 510 217 4421 or 561 658 6136 High Purity Float Zone and Specialty CZ Silicon for Power, IR and Mirror Optics, Optoelectronics, MEMS, SOI, and other Semiconductor applications. Service in SOI, Polishing SSP and DSP. Quartz, Glass, Pyrex and Borofloat Wafer Supply. Anodic Bonding. SOG, SOS. From stephane.durand@univ-lemans.fr Wed Mar 6 08:55:36 2002 From: stephane.durand@univ-lemans.fr (=?iso-8859-1?Q?St=E9phane?= DURAND) Date: Wed, 06 Mar 2002 09:55:36 +0100 Subject: [mems-talk] EPI layer Etching In-Reply-To: <20020305150258.774.qmail@web10802.mail.yahoo.com> Message-ID: <4.2.0.58.20020306095215.00a38580@aviion> Dear M. Aslam, you may use a multi-layer SIO2 - SI3N4 as mask. SI3N4 needs a thins SIO2 layer to prevent pinholes during etching, but it shows virtually no etch in TMAH (I experienced this with KOH, but I read it stands also TMAH). best regards, Stephane Durand At 07:02 05/03/02 -0800, vous avez icrit: >i have got silicon <100> wafers with EPI layer of Ar. >I want to etch through the silicon wafer to make some >windows but EPI works as etch stop(i think). How can >I etch EPI layer with wet etchant like TMAH. If i >keep on etching the wafer, EPI layer etches very >slowly but my mask ( SiO2 ) etches rapidly as compared >to EPI layer. Is there any body to help, Please. > >Thanks > >M. Aslam >Try FREE Yahoo! Mail - the world's greatest free email! >http://mail.yahoo.com/ >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ --------------- Stiphane DURAND --------------- Laboratoire d'Acoustique de l'Universiti du Maine LAUM - UMR-CNRS 6613 avenue Olivier Messiaen F-72085 Le Mans Cedex 9 --------------- Serveur du LAUM : http://laum.univ-lemans.fr --------------- Ecole Nationale Supirieure d'Inginieurs du Mans (E.N.S.I.M) rue Aristote F-72085 Le Mans Cedex 9 --------------- Serveur de l'ENSIM : http://ensim.univ-lemans.fr --------------- Email : stephane.durand@univ-lemans.fr Tel. : 33.(0)2.43.83.39.54 (bureau/office) Tel. : 33.(0)2.43.83.35.93 (secretariat E.N.S.I.M.) Fax. : 33.(0)2.43.83.37.94 (E.N.S.I.M.) Tel. : 33.(0)2.43.83.32.70 (secretariat L.A.U.M.) Fax. : 33.(0)2.43.83.35.20 (L.A.U.M.) --------------- Serveur de l'Universiti :http://www.univ-lemans.fr From frankdipiazza@sensicore.com Wed Mar 6 13:29:19 2002 From: frankdipiazza@sensicore.com (Frank DiPiazza) Date: Wed, 6 Mar 2002 08:29:19 -0500 Subject: [mems-talk] Fluidic Packaging Message-ID: <7B935C58B3FE9B41BF129B70865A4A3116171C@ardfs02.ardesta.com> Hi Lincoln, Micronics is a great place to go to for your needs. The contact there is Karen Hedine, President of Micronics. (425) 895-9197 ex 126. Good Luck. Frank -----Original Message----- From: Lincoln Young [mailto:lyoung@kionix.com] Sent: Friday, March 01, 2002 1:54 PM To: mems-talk@memsnet.org Subject: [mems-talk] Fluidic Packaging Good Day, I am searching for plastics machining/molding companies that are targeting microfluidic packaging. We are currently looking for some companies that would be prepared to assist with the development of a number of packages for different applications. Any leads would be appreciated. Thank you, Lincoln Lincoln Young Product Engineer, Microfluidics Kionix, Inc. (Ph) 607-257-1080 ex. 197 lyoung@kionix.com _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From hogedoorn@pml.tno.nl Wed Mar 6 14:47:36 2002 From: hogedoorn@pml.tno.nl (Hogedoorn, Armanda) Date: Wed, 6 Mar 2002 15:47:36 +0100 Subject: [mems-talk] High temperature Message-ID: Hello, I am looking for a good packaging/packaging material voor MEMS and IC, which is capable of high temperatures (up to 3200 degrees celcius). Does someone know which material I can use, or a company who makes these packages? And, does someone know a company who makes MEMS temperature-sensors for these high temperatures. Thanks, Armanda T. Hogedoorn hogedoorn@pml.tno.nl TNO- Prins Maurits Laboratory http://www.pml.tno.nl P.O. Box 45 2080 AA RIJSWIJK (ZH) The Netherlands Tel: +31 (0)15 284 3076 From irivas@ceit.es Wed Mar 6 15:53:19 2002 From: irivas@ceit.es (Rivas, Isabel) Date: Wed, 6 Mar 2002 16:53:19 +0100 Subject: [mems-talk] ion exchange simulator Message-ID: Hello, I'm looking for a freeware program to simulate the process of field assisted ion diffusion into materials (like glass). I would thank any suggestion on the matter. Best regards, Isabel. Isabel Rivas Guerrero irivas@ceit.es > CEIT, Seccisn de Microelectrsnica. > Paseo de Manuel Lardizabal, 15. > 20018 San Sebastian, Spain > Tel.: (34) 943 212 800 > Fax.: (34) 943 213 076 From michael.martin@louisville.edu Wed Mar 6 17:23:53 2002 From: michael.martin@louisville.edu (Michael D Martin) Date: Wed, 06 Mar 2002 12:23:53 -0500 Subject: [mems-talk] Pt deposition on glass or silicon Message-ID: Hi Hongjun, To avoid adhesion layers, you can use energetic ion deposition. Using this technique you can definitely put Au on glass without an adhesion layer and it passes tape tests. To use the technique inexpensively you can buy a conversion kit for your 4" sputterer from Skion Corp in NJ, www.skion.com, for about $10k. The conversion kit is essentially a thermally controlled Cs source. The idea is that the Cs, which has a very low work function, redilly gives up electrons to the metal source to produce negative ions that are given kinetic energy via either the plasma potential or an externally applied field. -Mike >>> hzeng@ece.uic.edu 03/05/02 06:03PM >>> Dear all, I'm trying to fabricate platinum electrodes on glass or silicon wafers. Originally, adopting Ti or Cr as adhesion layer can improve the adhesion of platinum on the substrate, but now my electrodes will be used for electroanalysis and don't want any active metal. So, 1. Is there any method to deposit platinum directly on glass or silicon with enough adhesion? 2. Or, if without platinum electrode, is there any other material which is chemically stable enough patterned on Si or glass to electrolyze water. Thanks a lot, Hongjun Zeng Microfabrication Applications Laboratory (MAL) University of Illinois at Chicago ERF Building, 842 W. Taylor Street Chicago, IL 60607-7022 Room 3014 ERF Tel.: 312-413-5889, Fax: 312-996-6465 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From arazavi@pmrc.marc.gatech.edu Wed Mar 6 17:21:35 2002 From: arazavi@pmrc.marc.gatech.edu (Ali Razavi) Date: Wed, 6 Mar 2002 12:21:35 -0500 Subject: [mems-talk] Characterizing Microlens Arrays Message-ID: <51502FA7FFF3D4118B7300600819C5010D126D@pmrc.marc.gatech.edu > Hello, We are fabricating microlenses. I am looking for methods that can help us to measure focal length, depth of focus, and spot size (in general testing the operation, efficiency and repeatablity of microlenses). Also, I am looking for vendors that can provide us the items required to build the setup. Thanks, Ali ******************************************************************** Ali Razavi Postdoctoral Fellow Room 455, Manufacturing Research Center Gerogia Institute of Technology, Atlanta, GA 30332-0405 Phone: 678-637-1634, Fax: 404-894-9342 E-mail: arazavi@pmrc.marc.gatech.edu ******************************************************************** From rdean@Eng.Auburn.EDU Wed Mar 6 18:03:44 2002 From: rdean@Eng.Auburn.EDU (Robert Dean) Date: Wed, 06 Mar 2002 12:03:44 -0600 Subject: [mems-talk] Characterizing Microlens Arrays In-Reply-To: <51502FA7FFF3D4118B7300600819C5010D126D@pmrc.marc.gatech.ed u > Message-ID: <3.0.5.32.20020306120344.00ad1100@pophost.eng.auburn.edu> Ali, Hello. I would suggest that you contact Michele Banish at MEMS Optical (Huntsville, AL), www.memsoptical.com. They not only manufacture micro-optics, but they also have a Zygo interferometer that I believe can characterize the shape of your micro-optics. Sincerely, Robert Dean Auburn University At 12:21 PM 3/6/02 -0500, you wrote: >Hello, > > We are fabricating microlenses. I am looking for methods that >can help us to measure focal length, depth of focus, and spot >size (in general testing the operation, efficiency and repeatablity >of microlenses). > Also, I am looking for vendors that can provide us the items >required to build the setup. > Thanks, > Ali >******************************************************************** > Ali Razavi > Postdoctoral Fellow > Room 455, Manufacturing Research Center > Gerogia Institute of Technology, Atlanta, GA 30332-0405 > Phone: 678-637-1634, Fax: 404-894-9342 > E-mail: arazavi@pmrc.marc.gatech.edu >******************************************************************** >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ From BobHendu@aol.com Wed Mar 6 18:21:26 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Wed, 6 Mar 2002 13:21:26 EST Subject: [mems-talk] Pt deposition on glass or silicon Message-ID: <116.d606493.29b7b826@aol.com> You might try to do oxygen plasma clean prior to deposition and during the deposition use an rf clean prior to Pt dep. Bob Henderson From sandoval@cts-design.com Wed Mar 6 18:24:41 2002 From: sandoval@cts-design.com (F. Sandoval-Ibarra) Date: Wed, 06 Mar 2002 12:24:41 -0600 Subject: [mems-talk] ion exchange simulator References: Message-ID: <3C865EE9.5693D5E9@cts-design.com> Hi Isabel This is F. Sandoval writing you from Guadalajara, Mixico. El Grupo de Potencia del Instituto de Microelectrsnica de Barcelona, CNM-CSIC (www.cnm.es/imb/), en el pasado reciente desarrolls una herramienta CAD para los propssitos que seqalas. La persona de contacto es Josi Millan (jose.millan@cnm.es) y/o Xavi Jorda (xavier.jorda@cnm.es) Good luck F. Sandoval Analog Design Group CINVESTAV-Guadalajara Mixico "Rivas, Isabel" wrote: > Hello, > > I'm looking for a freeware program to simulate the process of field assisted > ion diffusion into materials (like glass). I would thank any suggestion on > the matter. > > Best regards, > > Isabel. > > Isabel Rivas Guerrero > irivas@ceit.es > > CEIT, Seccisn de Microelectrsnica. > > Paseo de Manuel Lardizabal, 15. > > 20018 San Sebastian, Spain > > Tel.: (34) 943 212 800 > > Fax.: (34) 943 213 076 > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From gmiller@kvh.com Wed Mar 6 22:23:18 2002 From: gmiller@kvh.com (Greg Miller) Date: Wed, 6 Mar 2002 17:23:18 -0500 Subject: [mems-talk] Problem in etching Al and Pt Message-ID: You might want to try AZ MIF 327 Photoresist developer - you might stand a better chance of etching your Al film - its very slow but works quite well. Greg Miller KVH -----Original Message----- From: Hoyin [mailto:hychan@acae.cuhk.edu.hk] Sent: Monday, March 04, 2002 9:38 AM To: mems-talk@memsnet.org Subject: [mems-talk] Problem in etching Al and Pt Hi all, I have got a simple question. I want to sacrifically release my = device by etching Al. However, one of the layer is Pt. Will the Al = etchant etch Pt ??? What etchant do you suggest?? Thank you very much!!! Hoyin _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From sandoval@cts-design.com Thu Mar 7 00:13:32 2002 From: sandoval@cts-design.com (F. Sandoval-Ibarra) Date: Wed, 06 Mar 2002 18:13:32 -0600 Subject: [mems-talk] resistor model Message-ID: <3C86B0AB.33807B84@cts-design.com> Hello all It is well known that integrated resistors have temperature dependence. About MOSIS, AMI 1.55m CMOS process, N-well, somebody knows the temperature coefficient value (ppm/K)? I'm interested in the following resistors: Poly Poly2 Ndif Pdif N-well P base Thanks in advance F. Sandoval-Ibarra Analog Design Group CINVESTAV-Guadalajara, Mixico www.gdl.cinvestav.mx From yaopeng@UDel.Edu Thu Mar 7 01:01:34 2002 From: yaopeng@UDel.Edu (Peng Yao) Date: Wed, 6 Mar 2002 20:01:34 -0500 (EST) Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: Hi all, I am looking for a way to etch SiO2 with my RIE. What kind of gas is necessary for this work. Thank you very much! leo DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 From ks98105@yahoo.com Thu Mar 7 02:09:44 2002 From: ks98105@yahoo.com (K. Sayavong) Date: Wed, 6 Mar 2002 18:09:44 -0800 Subject: [mems-talk] Dallas Area MEMS Companies? Message-ID: <002701c1c57d$279d7920$6601a8c0@attbi.com> Where can I get a complete list of companies in the MEMS industry that are based in the Dallas/Ft. Worth area? I am planning on moving down there to study/work. Thanks. Kham From frank_berauer@hp.com Thu Mar 7 03:41:25 2002 From: frank_berauer@hp.com (BERAUER,FRANK (HP-Singapore,ex7)) Date: Thu, 7 Mar 2002 11:41:25 +0800 Subject: [mems-talk] High temperature Message-ID: <2CFFECBFFEEEAF4DB4B2EB9BD47A736639962E@xsg07.sgp.hp.com> It would be interesting to know about any electronic application that works at such temperatures. Certainly not based on Si (melting point 1414 deg C). Can you tell us more about what you have in mind? Thanks! Greetings, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore -----Original Message----- From: Hogedoorn, Armanda [mailto:hogedoorn@pml.tno.nl] Sent: Wednesday, March 06, 2002 10:48 PM To: 'mems-talk@memsnet.org' Subject: [mems-talk] High temperature Hello, I am looking for a good packaging/packaging material voor MEMS and IC, which is capable of high temperatures (up to 3200 degrees celcius). Does someone know which material I can use, or a company who makes these packages? And, does someone know a company who makes MEMS temperature-sensors for these high temperatures. Thanks, Armanda T. Hogedoorn hogedoorn@pml.tno.nl TNO- Prins Maurits Laboratory http://www.pml.tno.nl P.O. Box 45 2080 AA RIJSWIJK (ZH) The Netherlands Tel: +31 (0)15 284 3076 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From eenjrt@elec-eng.leeds.ac.uk Thu Mar 7 08:58:02 2002 From: eenjrt@elec-eng.leeds.ac.uk (JAMES.R.THORPE) Date: Thu, 7 Mar 2002 08:58:02 GMT Subject: [mems-talk] Pt deposition on glass or silicon In-Reply-To: References: Message-ID: <80B7E282FC6@elec-eng.leeds.ac.uk> Another trick you could try is to anneal the Pt coated substrates. I've done this with Ag coated glass slides (220 degC for 1 minute in an N2 atmosphere) and seen a marked improvement in film adhesion. Rgds Jim. *********************************************** Dr Jim Thorpe Research Fellow Institute of Microwaves and Photonics School of Electronic and Electrical Engineering The University of Leeds Leeds LS2 9JT United Kingdom Tel: +44 (0)113 233 2049 (Office) Tel: +44 (0)113 233 2084 (Lab) Fax: +44 (0)113 244 9451 *********************************************** From christopher.blanford@chemistry.oxford.ac.uk Thu Mar 7 08:55:34 2002 From: christopher.blanford@chemistry.oxford.ac.uk (Christopher Blanford) Date: Thu, 7 Mar 2002 08:55:34 +0000 (GMT) Subject: [mems-talk] Fatigue in thin films of poly-Si Message-ID: Dear listers I thought this article was worth sharing. It came out in the 4 March issue of Applied Physics Letters from UC Berkeley and LBNL. Title: "Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems" Authors: C.L. Muhlstein, E.A. Stach, R.O. Ritchie Abstract: Reported nearly a decade ago, cyclic fatigue failure in silicon thin films has remained a mystery. Silicon does not display the room-temperature plasticity or extrinsic toughening mechanisms necessary to cause fatigue in either ductile (e.g., metals) or brittle (e.g., ceramics and ordered intermetallics) materials. This letter presents experimental evidence for the cyclic fatigue of silicon via a conceptually different mechanism termed reaction-layer fatigue. Based on mechanical testing, electron microscopy, and self-assembled monolayers, we present direct observation of fatigue-crack initiation in polycrystalline silicon, the mechanism of crack initiation, and a method for altering fatigue damage accumulation. Reference: Applied Physics Letters (2000) 80, 15321534 -- Christopher F. Blanford Inorganic Chemistry Laboratory, South Parks Road, Oxford, OX1 3QR, UK Phone: (44)/(0)-1865-282603; Fax: (44)/(0)-1865-272690 PGP keyID: 356CC429 http://pgp.ai.mit.edu/ From frank_berauer@hp.com Thu Mar 7 09:52:37 2002 From: frank_berauer@hp.com (BERAUER,FRANK (HP-Singapore,ex7)) Date: Thu, 7 Mar 2002 17:52:37 +0800 Subject: [mems-talk] Wafer Bonding Information? Message-ID: <2CFFECBFFEEEAF4DB4B2EB9BD47A7366399630@xsg07.sgp.hp.com> Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore From mawei@ust.hk Thu Mar 7 14:26:53 2002 From: mawei@ust.hk (ll) Date: Thu, 7 Mar 2002 22:26:53 +0800 (HKT) Subject: [mems-talk] inertial sensor testing Message-ID: Dear group members, Now I suffer a problem on inertial switch testing. My switch is made of spring-mass structure which can sensitive to acceleration. When there is a accelaration, the switch will be in ON state. Now I put it on a shaker(sinusoidal input) to test it using the theory that the displacement of my switch's mass will be larger when my switch is vibrating at its resonant frequency. My switch's resonant frequency is about 18kHz (it is a little high:). ), the mass need to travel 10micron to reach its ON state. SO here comes my PROBLEM: I sweep my shaker output frequency from 100Hz to 20kHz BUT can't get any ON signal!!! Does anyone has experience of this situation? It can be vibrated at its resonant frequency even this frequency is high, is that right? Is 10 micron a large displacement for micro device to travel? Is there other method to detect if the device does vibrate and also its resonant frequency? Please pay attension to my long story and give me wonderful reply:) Best, Vickie From rshile@tmmicro.com Thu Mar 7 17:27:20 2002 From: rshile@tmmicro.com (Roger Shile) Date: Thu, 07 Mar 2002 09:27:20 -0800 Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: Most any fluorine based chemistry should work, CF4, SF6, etc. If you want selectivity over underlying Si, use CHF3. Roger Shile >>> yaopeng@UDel.Edu 03/06/02 05:01PM >>> Hi all, I am looking for a way to etch SiO2 with my RIE. What kind of gas is necessary for this work. Thank you very much! leo DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From John.Milliken@Fluor.com Thu Mar 7 17:28:10 2002 From: John.Milliken@Fluor.com (John.Milliken@Fluor.com) Date: Thu, 7 Mar 2002 09:28:10 -0800 Subject: [mems-talk] Dallas Area MEMS Companies? Message-ID: Kham, I coincidentally received a call yesterday from a recruiter looking for a MEMS engineer. My company builds facilities for manufacturing firms but does not manufacture MEMS. You might try this contact. Mr. Alton Seymour 1-972-239-6572 Good Luck John Milliken Project Manager, Fluor Daniel 15242 NW Greenbrier Parkway Beaverton, OR 97006 (503) 533-4466 fax 629-8977 "K. Sayavong" m> Sent by: cc: mems-talk-admin@m emsnet.org Subject: [mems-talk] Dallas Area MEMS Companies?. 03/06/2002 06:09 PM . Please respond to mems-talk Where can I get a complete list of companies in the MEMS industry that are based in the Dallas/Ft. Worth area? I am planning on moving down there to study/work. Thanks. Kham _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ ----------------------------------------------------------------------------------------------------- The information transmitted is intended only for the person or entity to which it is addressed and may contain confidential and/or privileged material. If you are not the intended recipient of this message you are hereby notified that any use, review, retransmission, dissemination, distribution, reproduction or any action taken in reliance upon this message is prohibited. If you received this in error, please contact the sender and delete the material from any computer. Any views expressed in this message are those of the individual sender and may not necessarily reflect the views of the company. ------------------------------------------------------------------------------------------------------- From yaopeng@UDel.Edu Thu Mar 7 17:33:00 2002 From: yaopeng@UDel.Edu (Peng Yao) Date: Thu, 7 Mar 2002 12:33:00 -0500 (EST) Subject: [mems-talk] selectivity between silicon nitride and silicon Message-ID: Hi, I am going to etch silicon using silicon nitride as the mask. But I only have CF4, SF6, O2 and He... I am not sure if those gases are enough for my application or I need to order some new gases. Thanks. Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 From pedersen@mems-exchange.org Thu Mar 7 18:08:37 2002 From: pedersen@mems-exchange.org (Michael Pedersen) Date: Thu, 07 Mar 2002 13:08:37 -0500 Subject: [mems-talk] selectivity between silicon nitride and silicon References: Message-ID: <3C87ACA5.5000209@mems-exchange.org> Hi Peng, Selectivity between silicon nitride and silicon is not good in most dry etch systems. You can etch with CF4/SF6 but the selectivity typically will be close to 1:1. Michael Pedersen The MEMS Exchange Peng Yao wrote: > Hi, > I am going to etch silicon using silicon nitride as the mask. But I only > have CF4, SF6, O2 and He... I am not sure if those gases are enough for my > application or I need to order some new gases. > Thanks. From vic@gennano.com Thu Mar 7 10:26:24 2002 From: vic@gennano.com (Vic Kley) Date: Thu, 7 Mar 2002 10:26:24 -0000 Subject: [mems-talk] inertial sensor testing References: Message-ID: <052c01c1c5c2$88efaaa0$6400a8c0@pacbell.net> Just because it resonates doesn't mean that the AMPLITUDE of the resonance is +/- 10 microns. This will depend on the spring constant over the operating range (presumably +/11 microns or more) and the excitation energy. Another way to put this is turn up the volume! At 18khz an audio drive would work just fine, and you can buy mucho watts (excitation energy) real cheap. Vic ----- Original Message ----- From: ll To: Sent: Thursday, March 07, 2002 2:26 PM Subject: [mems-talk] inertial sensor testing > Dear group members, > > Now I suffer a problem on inertial switch testing. My switch is made of > spring-mass structure which can sensitive to acceleration. When there is a > accelaration, the switch will be in ON state. Now I put it on a > shaker(sinusoidal input) to test it using the theory that the displacement > of my switch's mass will be larger when my switch is vibrating at its > resonant frequency. My switch's resonant frequency is about 18kHz (it is a > little high:). ), the mass need to travel 10micron to reach its ON state. > > SO here comes my PROBLEM: I sweep my shaker output frequency from 100Hz to > 20kHz BUT can't get any ON signal!!! > > Does anyone has experience of this situation? > > It can be vibrated at its resonant frequency even this frequency is high, > is that right? > > Is 10 micron a large displacement for micro device to travel? > > Is there other method to detect if the device does vibrate and also its > resonant frequency? > > Please pay attension to my long story and give me wonderful reply:) > > Best, > > Vickie > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From TThurston@suss.com Thu Mar 7 19:06:14 2002 From: TThurston@suss.com (Tim Thurston) Date: Thu, 07 Mar 2002 14:06:14 -0500 Subject: [mems-talk] Wafer Bonding Information? Message-ID: Karl SuSS, now SuSS Micro Tec makes bonding equipment, their web site is sussmicrotec.com it may also contain some info on the apps. side From aminalimari@rogers.com Thu Mar 7 20:00:31 2002 From: aminalimari@rogers.com (Amin Abdul-Fattah) Date: Thu, 7 Mar 2002 15:00:31 -0500 Subject: [mems-talk] High temperature References: <2CFFECBFFEEEAF4DB4B2EB9BD47A736639962E@xsg07.sgp.hp.com> Message-ID: <001b01c1c612$bccc4860$7ace6618@rchrd.phub.net.cable.rogers. com> My thesis was a chip that is cooled using microchannels that passes fluid in it to bring chip high temp. down and then you might use what is available of packaging technics (you should connect the microchannels to micro-pump. Good luck. Amin Abdul-Fattah ATE Ottawa-Canada ----- Original Message ----- From: "BERAUER,FRANK (HP-Singapore,ex7)" To: Sent: Wednesday, March 06, 2002 10:41 PM Subject: RE: [mems-talk] High temperature > It would be interesting to know about any electronic application that works > at such temperatures. Certainly not based on Si (melting point 1414 deg C). > Can you tell us more about what you have in mind? Thanks! > > Greetings, > Frank Berauer > Senior R&D Engineer > Hewlett-Packard Singapore > > > -----Original Message----- > From: Hogedoorn, Armanda [mailto:hogedoorn@pml.tno.nl] > Sent: Wednesday, March 06, 2002 10:48 PM > To: 'mems-talk@memsnet.org' > Subject: [mems-talk] High temperature > > > Hello, > > I am looking for a good packaging/packaging material voor MEMS and IC, which > is capable of high temperatures (up to 3200 degrees celcius). Does someone > know which material I can use, or a company who makes these packages? And, > does someone know a company who makes MEMS temperature-sensors for these > high temperatures. > > Thanks, > > Armanda T. Hogedoorn > hogedoorn@pml.tno.nl > > TNO- Prins Maurits Laboratory > http://www.pml.tno.nl > P.O. Box 45 > 2080 AA RIJSWIJK (ZH) > The Netherlands > > Tel: +31 (0)15 284 3076 > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From BobHendu@aol.com Thu Mar 7 20:36:08 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Thu, 7 Mar 2002 15:36:08 EST Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: There are many choices depending on the results you are looking to obtain. CF4+4to8% O2 is pretty standard for oxide etching. You will probably need to combine that with Helium to produce uniform results. We have also used SF6 + Helium and it has some advantages with respect to etch rate and selectivity to resist. If you would like to discuss further with things like etch thickness desired, masking material and other details just drop me an email. Bob Henderson From BobHendu@aol.com Thu Mar 7 20:40:29 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Thu, 7 Mar 2002 15:40:29 EST Subject: [mems-talk] selectivity between silicon nitride and silicon Message-ID: <11a.d1c33dc.29b92a3d@aol.com> I am afraid you will find that using those gases to etch silicon will also etch your silcon nitride mask. You might be better off using photoresist as your masking material. What shape are you looking for in the silicon etch. Anisotropic or isotropic. How much undercut can you stand between interface of the masking material and the silicon interface? Drop me a line and I will discuss further with you. Bob Henderson From rwilliston@bigbangwidth.com Thu Mar 7 21:02:23 2002 From: rwilliston@bigbangwidth.com (Rick Williston) Date: Thu, 7 Mar 2002 14:02:23 -0700 Subject: [mems-talk] High temperature In-Reply-To: <001b01c1c612$bccc4860$7ace6618@rchrd.phub.net.cable.rogers . com> Message-ID: <004d01c1c61b$61a36780$730aa8c0@D5K2RF01> Ouch! A pretty tough application indeed! I think you will have to relax on some of your criteria or be a little more specific on what you are trying to achieve. For instance - at those temperatures, Si might even work but AS THE LIQUID; it doesn't vaporize until above 3200C. The problem is that below its melting point your pump might have a hard time pumping when it's a solid. - diamond could work at those temperatures but a) I am sure that it would be expensive and difficult to form even simple devices and b) it has the best thermal conductivity going so the presence of your liquid in channels would make cooling things worse, not better. Can you just place your device on a diamond heat sink? - if this can't work, you are left with refractory metals like tungsten as the only solids that can remain solid and be formed (albeit not too easily). The choice of a suitable cooling fluid that remains in liquid form from room temp to 3200+ degrees still eludes me, however. I think the diamond heat sink is much simpler. It does depend upon what your ambient atmosphere is, as diamond probably will be oxidized in air at close to these temperatures and cause you grief. Hope this helps Cheers, Rick Williston Manager, Nanofabrication BigBangwidth Inc. Edmonton, AB -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of Amin Abdul-Fattah Sent: Thursday, March 07, 2002 1:01 PM To: mems-talk@memsnet.org Subject: Re: [mems-talk] High temperature My thesis was a chip that is cooled using microchannels that passes fluid in it to bring chip high temp. down and then you might use what is available of packaging technics (you should connect the microchannels to micro-pump. Good luck. Amin Abdul-Fattah ATE Ottawa-Canada From arazavi@pmrc.marc.gatech.edu Thu Mar 7 21:14:07 2002 From: arazavi@pmrc.marc.gatech.edu (Ali Razavi) Date: Thu, 7 Mar 2002 16:14:07 -0500 Subject: [mems-talk] Wafer Bonding Information? Message-ID: <51502FA7FFF3D4118B7300600819C5010D1279@pmrc.marc.gatech.edu > Hi, You may want to have a look at the followings: 1. Tong, Q. and Gosele, U., Semiconductor Wafer Bonding Science and Technology, John Wiley, 1999. 2. Schmidt, M. A., "Wafer to Wafer Bonding for Microstructure Formation," Proceedings of IEEE, Vol. 86, no. 8, pp. 1575-1585, 1998. Regards, Ali :) ******************************************************************** Ali Razavi Postdoctoral Fellow Room 455, Manufacturing Research Center Gerogia Institute of Technology, Atlanta, GA 30332-0405 Phone: 678-637-1634, Fax: 404-894-9342 E-mail: arazavi@pmrc.marc.gatech.edu ******************************************************************** -----Original Message----- From: BERAUER,FRANK (HP-Singapore,ex7) To: 'mems-talk@memsnet.org' Sent: 3/7/02 4:52 AM Subject: [mems-talk] Wafer Bonding Information? Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From rshile@tmmicro.com Thu Mar 7 22:43:05 2002 From: rshile@tmmicro.com (Roger Shile) Date: Thu, 07 Mar 2002 14:43:05 -0800 Subject: [mems-talk] selectivity between silicon nitride and silicon Message-ID: SiO2 would probably provide a better mask, but if you don't need to etch very deep the nitride might suffice. Better yet if you have resist on top of the nitride as extra protection. SF6 is an excellent etchant for Si using RIE. Roger Shile >>> yaopeng@UDel.Edu 03/07/02 09:33AM >>> Hi, I am going to etch silicon using silicon nitride as the mask. But I only have CF4, SF6, O2 and He... I am not sure if those gases are enough for my application or I need to order some new gases. Thanks. Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From adam@wengrow.com Thu Mar 7 22:50:36 2002 From: adam@wengrow.com (Adam Wengrow) Date: Thu, 07 Mar 2002 14:50:36 -0800 Subject: [mems-talk] RE: Wafer Bonding Information? In-Reply-To: Message-ID: Frank, a real nice text on bonding is SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR WAFER BONDING by Gvsele and Tong, out of Duke. ADAM -----Original Message----- From: "BERAUER,FRANK (HP-Singapore,ex7)" To: "'mems-talk@memsnet.org'" Date: Thu, 7 Mar 2002 17:52:37 +0800 Subject: [mems-talk] Wafer Bonding Information? Reply-To: mems-talk@memsnet.org Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore From yaopeng@UDel.Edu Thu Mar 7 23:05:40 2002 From: yaopeng@UDel.Edu (Peng Yao) Date: Thu, 7 Mar 2002 18:05:40 -0500 (EST) Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: Hi Bob, I am using PhotoResist as the mask during etching. And the thickness I want is about 1.5 micron. Actually, I want etch both the photoresist and the SiO2 at the same etching rate, so that I can transfer the gray scale structure of my photoresist to SiO2. I have tried using CF4+O2, but my glass sample was really tough to be get rid of. I am thinking one of the possible reason is that the glass sample I used, which is actrually used as microscope cover... Maybe I have to buy some silica wafer to do this work. Peng Yao DOEs lab Electrical Engineering Dept. Univeristy of delaware Newark D.E 19716 From c.brubaker@evgroup.com Thu Mar 7 23:51:28 2002 From: c.brubaker@evgroup.com (Brubaker Chad) Date: Thu, 7 Mar 2002 16:51:28 -0700 Subject: [mems-talk] Wafer Bonding Information? Message-ID: <1DD2B880949BD311907B0050040C0A243DE26A@MAGELLAN> Dear Frank, Wow!! This is a tremendously broad question. An overview of wafer bonding techniques, along with which materials can be bonded? Actually, the second question is easier. Technically, anything can be bonded to anything (or nearly so). However, as you mentioned, the method is important. First and foremost, your biggest issue with wafer bonding is the Thermal Coefficient of Expansion (TCE) for each material. Once two differing materials are bonded together, any change of temperature can cause a stress gradient, as one of the materials expands more rapidly than the other. That said, there are three basic bonding processes: 1) Anodic Bonding - this is the use of electricity in combination with elevated temperatures to perform a bond between an ion bearing glass and an oxidizable metal. 2) Thermocompression Bonding - Bonding using an intermediate layer, along with a combination of heat and pressure, to create a bond between two substrates. 3) Direct bonding - bonding of two extremely smooth surfaces directly, without use of intermediate layer or electricity. This will typicaly require a high temperature anneal after bonding. A good overview paper would be A.R. Mirza and A. A. Ayon. "Silicon Wafer Bonding: Key to MEMS High-Volume Manufacturing", Sensors, Vol. 15, no. 12 1998. As to manufacturers for bonding equipment, EV Group has been manufacturing bonding equipment for over ten years, and has extensive experience in the field. Please visit our web site at www.evgroup.com. Best Regards, Chad Brubaker EV Group-Technology, Tel: (602) 437 9492 x 119, Fax: (602) 437 9435 E-mail: C.Brubaker@evgroup.com, Web: www.EVGroup.com, 03/07/02 -----Original Message----- From: BERAUER,FRANK (HP-Singapore,ex7) [mailto:frank_berauer@hp.com] Sent: Thursday, March 07, 2002 2:53 AM To: 'mems-talk@memsnet.org' Subject: [mems-talk] Wafer Bonding Information? Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From dick@imtmems.com Fri Mar 8 01:33:37 2002 From: dick@imtmems.com (Martin, Dick) Date: Thu, 7 Mar 2002 17:33:37 -0800 Subject: [mems-talk] High temperature Message-ID: 3200 Degrees C!!! That is HOT! It is what the Layman would call "White Hot". The CRC Applied Engineering Science Handbook lists 16 "Common Refractory Materials" The only one that has not melted at 3200C is graphite and it is heavily sublimating at 3590 C. Of the metals, only Tungsten has not melted. Rhenium melted at 3180 C. Normally optical techniques are used to measure these temperatures, such as an optical pyrometer. I am really curious....What are you trying? Dick Martin Principal Engineer innovative micro technology 75 robin hill road *goleta, ca 93117 ph: 805-681-2800 * fx: 805-967-2677 info@imtmems.com * www.imtmems.com _________________________________________ "Your strategic partner for MEMS design and 6" wafer manufacturing services with 0.355m photolithography, 30,000 sq. ft. fab, and non-CMOS materials flexibility, including metals/magnetics." -----Original Message----- From: Hogedoorn, Armanda [mailto:hogedoorn@pml.tno.nl] Sent: Wednesday, March 06, 2002 6:48 AM To: 'mems-talk@memsnet.org' Subject: [mems-talk] High temperature Hello, I am looking for a good packaging/packaging material voor MEMS and IC, which is capable of high temperatures (up to 3200 degrees celcius). Does someone know which material I can use, or a company who makes these packages? And, does someone know a company who makes MEMS temperature-sensors for these high temperatures. Thanks, Armanda T. Hogedoorn hogedoorn@pml.tno.nl TNO- Prins Maurits Laboratory http://www.pml.tno.nl P.O. Box 45 2080 AA RIJSWIJK (ZH) The Netherlands Tel: +31 (0)15 284 3076 _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From MFAChollet@ntu.edu.sg Fri Mar 8 02:09:15 2002 From: MFAChollet@ntu.edu.sg (Franck Alexis Chollet (Asst Prof)) Date: Fri, 8 Mar 2002 10:09:15 +0800 Subject: [mems-talk] inertial sensor testing Message-ID: <9C9309FA33DB90499DE4B818889DF6F714F34A@exchange01.staff.mai n.ntu.edu.sg> A few more wild guesses here : - you say the resonant frequency is 18kHz, is it measured or computed? In the later case you may easily be off by 20% or more compared to your device - at 20kHz you don't reach the resonance... - you detect the contact of the mass with a counter electrodes it seems, the contact duration will be very short (impact) and the contact force may be small, and what about the roughness of material in contact, and the materials used - in short you may have a hard time to detect the contact even if it happens... You may want to look in the papers about 'vibro scanning method' from the team of T. Masuzawa at the U. of Tokyo, they had similar problems - but not for acceleration measurement. Good luck, Franck "-----Original Message----- "From: Vic Kley [mailto:vic@gennano.com] "Sent: Thursday, 07 March, 2002 18:26 "To: mems-talk@memsnet.org "Subject: Re: [mems-talk] inertial sensor testing " " "Just because it resonates doesn't mean that the AMPLITUDE of "the resonance "is +/- 10 microns. This will depend on the spring constant over the "operating range (presumably +/11 microns or more) and the "excitation energy. "Another way to put this is turn up the volume! At 18khz an "audio drive would "work just fine, and you can buy mucho watts (excitation "energy) real cheap. " "Vic " "----- Original Message ----- "From: ll "To: "Sent: Thursday, March 07, 2002 2:26 PM "Subject: [mems-talk] inertial sensor testing " " "> Dear group members, "> "> Now I suffer a problem on inertial switch testing. My switch "is made of "> spring-mass structure which can sensitive to acceleration. "When there is a "> accelaration, the switch will be in ON state. Now I put it on a "> shaker(sinusoidal input) to test it using the theory that "the displacement "> of my switch's mass will be larger when my switch is vibrating at its "> resonant frequency. My switch's resonant frequency is about "18kHz (it is a "> little high:). ), the mass need to travel 10micron to reach "its ON state. "> "> SO here comes my PROBLEM: I sweep my shaker output frequency "from 100Hz to "> 20kHz BUT can't get any ON signal!!! "> "> Does anyone has experience of this situation? "> "> It can be vibrated at its resonant frequency even this "frequency is high, "> is that right? "> "> Is 10 micron a large displacement for micro device to travel? "> "> Is there other method to detect if the device does vibrate "and also its "> resonant frequency? "> "> Please pay attension to my long story and give me wonderful reply:) "> "> Best, "> "> Vickie "> _______________________________________________ "> mems-talk@memsnet.org mailing list: to unsubscribe or change "your list "> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From anshu_mehta@yahoo.com Fri Mar 8 04:00:10 2002 From: anshu_mehta@yahoo.com (anshu mehta) Date: Thu, 7 Mar 2002 20:00:10 -0800 (PST) Subject: [mems-talk] SU-8 exposure and parylene Message-ID: <20020308040010.59481.qmail@web20009.mail.yahoo.com> Hi I am using Su-8 5 as a structural layer for my device. I looked up Microchem website and they give the exposure in terms of mJ/cm2. Is it possible to find a rough estimate for exposure time on a particular aligner using the mJ/cm2 data? Also, I wanted to know if it possible to pattern parylene? Thanks, Anshu mehta. > Try FREE Yahoo! Mail - the world's greatest free > email! > http://mail.yahoo.com/ Try FREE Yahoo! Mail - the world's greatest free email! http://mail.yahoo.com/ From s.wiechmann@tu-harburg.de Fri Mar 8 08:11:13 2002 From: s.wiechmann@tu-harburg.de (Stefan Wiechmann) Date: Fri, 8 Mar 2002 09:11:13 +0100 Subject: [mems-talk] how to etch SiO2 with RIE In-Reply-To: Message-ID: I am also using CHF3+O2 to etch SiO2/Photoresist and wonder how helium helps to improve uniformity ? Stefan Wiechmann _______________________________________________ Von: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]Im Auftrag von BobHendu@aol.com Gesendet: Donnerstag, 7. Marz 2002 21:36 An: mems-talk@memsnet.org Betreff: Re: [mems-talk] how to etch SiO2 with RIE There are many choices depending on the results you are looking to obtain. CF4+4to8% O2 is pretty standard for oxide etching. You will probably need to combine that with Helium to produce uniform results. We have also used SF6 + Helium and it has some advantages with respect to etch rate and selectivity to resist. If you would like to discuss further with things like etch thickness desired, masking material and other details just drop me an email. Bob Henderson _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From Orjan.Vallin@angstrom.uu.se Fri Mar 8 08:14:15 2002 From: Orjan.Vallin@angstrom.uu.se (Orjan Vallin) Date: Fri, 8 Mar 2002 09:14:15 +0100 Subject: [mems-talk] Re: Wafer Bonding Information? In-Reply-To: Message-ID: Dear Frank, For the best review on waferbonding (in my opinion) please refer to: 'Wafer direct bonding: tailoring adhesion between brittle materials', Andreas Ploessl and Gertrud Krauter, Materials Science and Engineering, R25 (1999) pp 1-88. Orjan Vallin >Message: 8 >From: "BERAUER,FRANK (HP-Singapore,ex7)" >To: "'mems-talk@memsnet.org'" >Date: Thu, 7 Mar 2002 17:52:37 +0800 >Subject: [mems-talk] Wafer Bonding Information? >Reply-To: mems-talk@memsnet.org > >Dear fellow MEMS researchers, > >I would like to get an overview of wafer bonding techniques. >I am especially interested to know which materials can be bonded >together by which bonding techniques and what advantages and dis- >advantages there are. Also, which equipment manufacturers there >are. I would be grateful if somebody can point me to good sources >of information or literature. > >Thanks and have a nice day, > Frank Berauer > Senior R&D Engineer > Hewlett-Packard Singapore ------------------------------------------------------------------------------ Orjan Vallin Tel: +46-18-4717254 Uppsala University Fax: +46-18-555095 The Angstrom Laboratory Solid State Electronics P.O.Box 534, S-751 21 UPPSALA, Sweden ------------------------------------------------------------------------------ From aml@tonyrogers.freeserve.co.uk Fri Mar 8 11:01:05 2002 From: aml@tonyrogers.freeserve.co.uk (Tony Rogers) Date: Fri, 8 Mar 2002 11:01:05 -0000 Subject: [mems-talk] Wafer Bonding Information? In-Reply-To: <2CFFECBFFEEEAF4DB4B2EB9BD47A7366399630@xsg07.sgp.hp.com> Message-ID: Hello Frank, At AML we run courses on wafer bonding as well as being a wafer bonding equipment manufacturer. You can get details from our website, www.aml.co.uk. Regards Tony Tony Rogers Applied Microengineering Ltd 173 Curie Avenue Didcot OX11 0QG Tel.: +44 (0)1235 833934 Fax: +44 (0)1235 833935 e-mail: tony@aml.co.uk Web:http://www.aml.co.uk -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of BERAUER,FRANK (HP-Singapore,ex7) Sent: 07 March 2002 09:53 To: 'mems-talk@memsnet.org' Subject: [mems-talk] Wafer Bonding Information? Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From irivas@ceit.es Fri Mar 8 12:37:50 2002 From: irivas@ceit.es (Rivas, Isabel) Date: Fri, 8 Mar 2002 13:37:50 +0100 Subject: [mems-talk] CO2 sensor Message-ID: Hello, I' m interested in developing a capacitive CO2 sensor with a polymer as sensitive layer. Does anyone have experience with this kind of sensor? What kind of polymer could be better for this application?. Thank you for your time. Best regards, Isabel. Isabel Rivas Guerrero irivas@ceit.es > CEIT, Microelectronic section > Paseo de Manuel Lardizabal, 15. > 20018 San Sebastian, Spain From H.Luesebrink@RI.EVGroup.com Fri Mar 8 13:47:38 2002 From: H.Luesebrink@RI.EVGroup.com (Luesebrink Helge) Date: Fri, 8 Mar 2002 08:47:38 -0500 Subject: [mems-talk] Wafer Bonding Information? Message-ID: Frank, Check out http://www.evgroup.com/products/waferbonding.htm You'll find as well technical papers and other useful information. Best regards, Helge -----Original Message----- From: BERAUER,FRANK (HP-Singapore,ex7) [mailto:frank_berauer@hp.com] Sent: Thursday, March 07, 2002 4:53 AM To: 'mems-talk@memsnet.org' Subject: [mems-talk] Wafer Bonding Information? Dear fellow MEMS researchers, I would like to get an overview of wafer bonding techniques. I am especially interested to know which materials can be bonded together by which bonding techniques and what advantages and dis- advantages there are. Also, which equipment manufacturers there are. I would be grateful if somebody can point me to good sources of information or literature. Thanks and have a nice day, Frank Berauer Senior R&D Engineer Hewlett-Packard Singapore _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From d877101@oz.nthu.edu.tw Fri Mar 8 14:02:20 2002 From: d877101@oz.nthu.edu.tw (Yun-Ju Chuang) Date: Fri, 8 Mar 2002 22:02:20 +0800 Subject: [mems-talk] Problem in etching Al and Pt References: Message-ID: <001f01c1c6a9$dd6c00a0$5e6c728c@ess.nthu.edu.tw> Hi, Besides AZ MIF327, you may try AZ 400K developer. I think you could try this Al etchant H3PO4:HNO3:CH3COOH:DI=16:1:1:2 . We used this etchant to pattern Al as interconnecton line on Pt resistor. Yun-Ju Chuang ----- Original Message ----- From: "Greg Miller" To: Sent: Thursday, March 07, 2002 6:23 AM Subject: RE: [mems-talk] Problem in etching Al and Pt > You might want to try AZ MIF 327 Photoresist developer - you might stand > a better chance of etching your Al film - its very slow but works quite > well. > > Greg Miller > KVH > > -----Original Message----- > From: Hoyin [mailto:hychan@acae.cuhk.edu.hk] > Sent: Monday, March 04, 2002 9:38 AM > To: mems-talk@memsnet.org > Subject: [mems-talk] Problem in etching Al and Pt > > > Hi all, > > I have got a simple question. I want to sacrifically release my = > device by etching Al. However, one of the layer is Pt. Will the Al = > etchant etch Pt ??? What etchant do you suggest?? > > Thank you very much!!! > > Hoyin > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From cdimas@excite.com Fri Mar 8 15:10:26 2002 From: cdimas@excite.com (Clara Dimas) Date: Fri, 8 Mar 2002 10:10:26 -0500 (EST) Subject: [mems-talk] Wire Bonding Protocal Message-ID: <20020308151026.D0DAC109EBA@xprdmailfe.excite.com> I would like to learn more on automatic wire bonding protocals. Is there a limit to the angles in which a bond is made and its length? When bonding onto a chip carier with various level, can the bottom (closer) row have bonds at -60 degrees while the top row have bonds at +60 degrees? Any advice would be greatly apreciated! Thanks cdimas@excite.com ------------------------------------------------------------------------ From hogedoorn@pml.tno.nl Fri Mar 8 15:12:33 2002 From: hogedoorn@pml.tno.nl (Hogedoorn, Armanda) Date: Fri, 8 Mar 2002 16:12:33 +0100 Subject: [mems-talk] High temperature application Message-ID: Hello, Thank you for your response so far. It looks like I made everybody curious about what I want to try to do. So, I shall explain a few things. I investigate the use of microsensors in rocketpropulsion. I look for microsensors with are available, and I can use for my applications. An applications is to test and monitor the igniters. Unfortunately, the packaging of the sensors I found are not capable for the high temperatures e.g. in the combustion chamber or around it. Also, the sensors can not measure the high temperatures. That is why I am looking for packing up to 3200 degrees Celcius, so that maybe our production department or another campany can create my perfect sensor for pressure, temperature, stress and strain measurement. Greetings, Armanda T. Hogedoorn hogedoorn@pml.tno.nl TNO- Prins Maurits Laboratory http://www.pml.tno.nl P.O. Box 45 2080 AA RIJSWIJK (ZH) The Netherlands Tel: +31 (0)15 284 3076 From fowler@seas.ucla.edu Fri Mar 8 15:15:03 2002 From: fowler@seas.ucla.edu (Mighty Platypus) Date: Fri, 8 Mar 2002 07:15:03 -0800 (PST) Subject: [mems-talk] SU-8 exposure and parylene In-Reply-To: <20020308040010.59481.qmail@web20009.mail.yahoo.com> Message-ID: On Thu, 7 Mar 2002, anshu mehta wrote: > Hi Greetings! > I am using Su-8 5 as a structural layer for my > device. I looked up Microchem website and they give > the exposure in terms of mJ/cm2. Is it possible to > find a rough estimate for exposure time on a > particular aligner using the mJ/cm2 data? Well, our aligner (Karl Suss) has a sensor that measures the exposure power (mW/cm2). Finding the dose from that is pretty simple, assuming it's a linear relationship. > > Also, I wanted to know if it possible to pattern > parylene? I have patterned parylene with O2 plasma in an RIE. Selectivity with PR is about 1:1, and you may find that you have to roughen the parylene to get the PR to stick to it during spin coating. I roughened using O2 plasma for a very short time (10 seconds on my machine). If you're patterning it with SU-8, I suspect you won't have to roughen it. > > Thanks, > Anshu mehta. You're welcome, Jesse Fowler UCLA/MAE Dept., 420 Westwood Plaza, Room 18-121, ENGR IV Los Angeles, CA 90095-1597 | (310)825-3977 "Rule #6: There is no rule #6" -- Monty Python "ARTICLE SIX: THIS ARTICLE IS ABOLISHED" -- Constitution of Afghanistan From BobHendu@aol.com Fri Mar 8 15:38:21 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Fri, 8 Mar 2002 10:38:21 EST Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: <8c.150fe88d.29ba34ed@aol.com> What you are trying to do is difficult. You will need to establish a 1:1 etch rate oxide vs. photoresist. This will require a ratio around 50% CF4 50% O2. Do you have instruments available to measure these films. Probably a Dektac surface scanning system will work. Also I would recommend using a larger substrate as cooling on the electrode becomes important during the etch cycle. Bob From patton@er.com Fri Mar 8 15:47:11 2002 From: patton@er.com (Martin O. Patton) Date: Fri, 08 Mar 2002 10:47:11 -0500 Subject: [mems-talk] Re:mj/cm2 exposure In-Reply-To: Message-ID: <5.1.0.14.0.20020308103826.009fe820@192.156.168.2> Anshu, You can get a rough estimate by putting an optical power meter under your aligners lamp and measuring it's output. Then you know how long to expose. Without a power meter, make an aluminum foil mask with an eight inch wide slit aabout an inch long Put some photoresist on a junk wafer and put the foil over a real mask in the aligner. Expose for one second, move the foil down an eighth of an inch, expose for five seconds, etc. Then see what develops. Marty Martin O. Patton Senior Research Engineer Essential Research Incorporated 6410 Eastland Road Cleveland, Ohio 44142 www.er.com (440) 816-9850 From BobHendu@aol.com Fri Mar 8 15:43:53 2002 From: BobHendu@aol.com (BobHendu@aol.com) Date: Fri, 8 Mar 2002 10:43:53 EST Subject: [mems-talk] how to etch SiO2 with RIE Message-ID: <144.aba10a5.29ba3639@aol.com> It acts as a diluent and also cools the plasma to some degree protecting your photoresist from reticulating. Bob H From stephan.ertl@gfd-diamond.com Fri Mar 8 15:56:33 2002 From: stephan.ertl@gfd-diamond.com (Ertl, Stephan) Date: Fri, 8 Mar 2002 16:56:33 +0100 Subject: AW: [mems-talk] High temperature - Solution with Diamond MEMS ? Message-ID: <0136AE4B85E5604FA78C08E92119ABD00294FA@gfd-active.gfdulm> Hi ! Hot Stuff ! I really would like to know what you are working on. Your Web-Site does not tell too much ... Rick's idea of the diamond heat sink is nice. Diamond works pretty well up to 6000C in oxygen containing atmosphere, up to 12000C in vacuum or when passivated (for higher temperatures it starts graphitizing). If you go to higher temperatures it will work with some tricks, but soon reach its limits. We developed a technology basis for Diamond MEMS (deposition of highly oriented diamond on 2" Si wafers, surface and bulk micromachining, plasma etching and so on) and already realized several prototypes, including diamond temperature sensors. They can be realized in a wide range of sensitivities. If you think that diamond microstructures could be a solution to your problem please contact us. Hope this helps Stephan Ertl Director R+D GFD Gesellschaft f|r Diamantprodukte mbH 89081 Ulm Germany From vic@gennano.com Fri Mar 8 08:18:31 2002 From: vic@gennano.com (Vic Kley) Date: Fri, 8 Mar 2002 08:18:31 -0000 Subject: [mems-talk] High temperature application References: Message-ID: <063301c1c679$d5fd1500$6400a8c0@pacbell.net> Dear Amanda The impossible can be done! All the elements you wish to monitor can be achieved at that temperature or higher assuming that the rockets exhaust chamber, including the nozzle venturi is kept at a reasonable temperature and the oxidizer does not form a solid at that temperature with carbon. The solution won't be cheap and probably won't last more then one or two test firings. If you are interested contact me off the memsnet. Vic Kley vic@gennano.com ----- Original Message ----- From: Hogedoorn, Armanda To: Sent: Friday, March 08, 2002 3:12 PM Subject: [mems-talk] High temperature application > Hello, > > Thank you for your response so far. It looks like I made everybody curious > about what I want to try to do. So, I shall explain a few things. I > investigate the use of microsensors in rocketpropulsion. I look for > microsensors with are available, and I can use for my applications. An > applications is to test and monitor the igniters. Unfortunately, the > packaging of the sensors I found are not capable for the high temperatures > e.g. in the combustion chamber or around it. Also, the sensors can not > measure the high temperatures. That is why I am looking for packing up to > 3200 degrees Celcius, so that maybe our production department or another > campany can create my perfect sensor for pressure, temperature, stress and > strain measurement. > > Greetings, > > Armanda T. Hogedoorn > hogedoorn@pml.tno.nl > > TNO- Prins Maurits Laboratory > http://www.pml.tno.nl > P.O. Box 45 > 2080 AA RIJSWIJK (ZH) > The Netherlands > > Tel: +31 (0)15 284 3076 > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From sandoval@cts-design.com Fri Mar 8 16:31:58 2002 From: sandoval@cts-design.com (F. Sandoval-Ibarra) Date: Fri, 08 Mar 2002 10:31:58 -0600 Subject: [mems-talk] Wafer Bonding Information? References: <1DD2B880949BD311907B0050040C0A243DE26A@MAGELLAN> Message-ID: <3C88E77E.3E5BDEF4@cts-design.com> My friends About bonding I've some references: [1] J. Haisma .... Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations Japanese Journal of Applied Physics vol. 28, No. 8, pp. 1426-1443, August 1989 [2] R. Stengi ... Bubble-Free-Silicon Wafer Bonding in a Non-Cleanroom Environment Japanese Journal of Applied Physics vol. 27, No. 12, pp. 2364-2366, December 1988 [3] J. G. Fleming .... Low Temperature, High Strength, Wafer-toWafer Bonding J. Electrochem. Soc. vol. 139, No. 11, pp. 3300-3302, November 1992 [4] Masatada Horiuchi ...... Characteristics of Silicon Wafer-Bond Strengthening by Annealing J. Electrochem. Soc. vol. 139, No. 9, pp. 2589-2594, September 1992 [5]Sun Jin Yun .... Studies on Microvoids at the Interface of Direct Bonded Silicon Wafer J. Electrochem. Soc. vol. 139, No. 8, pp. 2326-2330, August 1992 [6] Olof Engstrom .... Electrical Characterization of Bonding Interfaces J. Electrochem. Soc. vol. 139, No. 12, pp. 3638-3644, December 1992 [7] A. D. Brooks .... Low-Temperature Electrostatic Silicon-to-Silicon Seals Using Spittered Borosilicate Glass J. Electrochem. Soc. vol. 119, No. 4, pp. 545-546, April 1972 Good luck F. Sandoval-Ibarra CINVESTAV-Guadalajara Mixico Brubaker Chad wrote: > Dear Frank, > > Wow!! This is a tremendously broad question. An overview of wafer bonding > techniques, along with which materials can be bonded? > > Actually, the second question is easier. Technically, anything can be > bonded to anything (or nearly so). However, as you mentioned, the method is > important. > > First and foremost, your biggest issue with wafer bonding is the Thermal > Coefficient of Expansion (TCE) for each material. Once two differing > materials are bonded together, any change of temperature can cause a stress > gradient, as one of the materials expands more rapidly than the other. > > That said, there are three basic bonding processes: > > 1) Anodic Bonding - this is the use of electricity in combination with > elevated temperatures to perform a bond between an ion bearing glass and an > oxidizable metal. > > 2) Thermocompression Bonding - Bonding using an intermediate layer, along > with a combination of heat and pressure, to create a bond between two > substrates. > > 3) Direct bonding - bonding of two extremely smooth surfaces directly, > without use of intermediate layer or electricity. This will typicaly > require a high temperature anneal after bonding. > > A good overview paper would be A.R. Mirza and A. A. Ayon. "Silicon Wafer > Bonding: Key to MEMS High-Volume Manufacturing", Sensors, Vol. 15, no. 12 > 1998. > > As to manufacturers for bonding equipment, EV Group has been manufacturing > bonding equipment for over ten years, and has extensive experience in the > field. Please visit our web site at www.evgroup.com. > > Best Regards, > > Chad Brubaker > > EV Group-Technology, Tel: (602) 437 9492 x 119, Fax: (602) 437 9435 > E-mail: C.Brubaker@evgroup.com, Web: www.EVGroup.com, 03/07/02 > > -----Original Message----- > From: BERAUER,FRANK (HP-Singapore,ex7) [mailto:frank_berauer@hp.com] > Sent: Thursday, March 07, 2002 2:53 AM > To: 'mems-talk@memsnet.org' > Subject: [mems-talk] Wafer Bonding Information? > > Dear fellow MEMS researchers, > > I would like to get an overview of wafer bonding techniques. > I am especially interested to know which materials can be bonded > together by which bonding techniques and what advantages and dis- > advantages there are. Also, which equipment manufacturers there > are. I would be grateful if somebody can point me to good sources > of information or literature. > > Thanks and have a nice day, > Frank Berauer > Senior R&D Engineer > Hewlett-Packard Singapore > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ > _______________________________________________ > mems-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.mems-exchange.org/ From nemeth@sophiawireless.com Fri Mar 8 16:47:30 2002 From: nemeth@sophiawireless.com (David Nemeth) Date: Fri, 8 Mar 2002 11:47:30 -0500 Subject: [mems-talk] High temperature - Solution with Diamond MEMS ? In-Reply-To: <0136AE4B85E5604FA78C08E92119ABD00294FA@gfd-active.gfdulm> Message-ID: You might also check out www.diamonex.com for diamond stuff... David Nemeth Senior Process Engineer Sophia Wireless, Inc. 14225-C Sullyfield Circle Chantilly, VA Ph: (703) 961-9573 x206 Fax:(703) 961-9576 -----Original Message----- From: mems-talk-admin@memsnet.org [mailto:mems-talk-admin@memsnet.org]On Behalf Of Ertl, Stephan Sent: Friday, March 08, 2002 10:57 AM To: mems-talk@memsnet.org Cc: hogedoorn@pml.tno.nl; Rick Williston Subject: AW: [mems-talk] High temperature - Solution with Diamond MEMS ? Hi ! Hot Stuff ! I really would like to know what you are working on. Your Web-Site does not tell too much ... Rick's idea of the diamond heat sink is nice. Diamond works pretty well up to 6000C in oxygen containing atmosphere, up to 12000C in vacuum or when passivated (for higher temperatures it starts graphitizing). If you go to higher temperatures it will work with some tricks, but soon reach its limits. We developed a technology basis for Diamond MEMS (deposition of highly oriented diamond on 2" Si wafers, surface and bulk micromachining, plasma etching and so on) and already realized several prototypes, including diamond temperature sensors. They can be realized in a wide range of sensitivities. If you think that diamond microstructures could be a solution to your problem please contact us. Hope this helps Stephan Ertl Director R+D GFD Gesellschaft f|r Diamantprodukte mbH 89081 Ulm Germany _______________________________________________ mems-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.mems-exchange.org/ From joy_yzhou@yahoo.com Fri Mar 8 16:51:27 2002 From: joy_yzhou@yahoo.com (YI ZHOU) Date: Fri, 8 Mar 2002 08:51:27 -0800 (PST) Subject: [mems-talk] SU-8 exposure and parylene In-Reply-To: Message-ID: <20020308165127.61206.qmail@web9208.mail.yahoo.com> Hi,I can answer your first question about SU-8 exposure.First, you can check the alinger's exposure intensity (in mW/cm2) from its manual. Then, according to the graph of exposure dose vs. thickness which provided by Microchem, you can find the specified exposure dose (in mJ/cm2), finally, expose time=exposure dose/exposure intensity (in seconds). Note,the values of exposure dose are measured on UV350~450nm.If you want to know more about the fabrication of SU-8, I recommend a forum. The web address is http://aveclafaux.freeservers.com/SU%2D8.htmlHope helpful.Yi ZhouMEMS LabDepartment of Mechanical EngineeringUniversity of Maryland, College Park> 10. SU-8 exposure and parylene (anshu mehta)>Message: 10>Date: Thu, 7 Mar 2002 20:00:10 -0800 (PST)>>From: anshu mehta >To: mems-talk@memsnet.org>Subject: [mems-talk] SU-8 exposure and parylene>Reply-To: mems-talk@memsnet.org>>Hi >I am using Su-8 5 as a structural layer for my>device. I looked up Microchem website and they give>the exposure in terms of mJ/cm2. Is it possible to>find a rough estimate for exposure time on a>particular aligner using the mJ/cm2 data? >Also, I wanted to know if it possible to pattern>parylene? >Thanks,>Anshu mehta. Try FREE Yahoo! Mail - the world's greatest free email! From poyntor@yahoo.com Fri Mar 8 17:22:05 2002 From: poyntor@yahoo.com (Sungjun Lee) Date: Sat, 09 Mar 2002 02:22:05 +0900 Subject: [mems-talk] [q]Lift-off of AZ5214 Message-ID: <200203090222050709.06C5B964@csns.snu.ac.kr> Dear all : I try to make an Au electrode pattern on SiO2/high doped-Si using AZ5214.(The structure is very simple.) Before Au(100nm) deposition, I used Ti(40nm) as an adhesion layer in the thermal evaporator. The temperautre(in substrate) during metal process is about 100C for 10 minutes. In process of lift-off by aceton(~80C) and ultrasonic agitation, I failed to remove the background of the electrodes. ("dirty with a thin network patterns" or "never-removed") (In Al case, I removed very easily in my lift-off procedure.) Then, I guess the temperature was so high. is it right? Should I use other metal evaporation method or other lift-off procedure? AZ5214 process was carried "without" hard-baking or cholrobenzene. Please give me any comments to beginner in MEMS. Sungjun From patton@er.com Fri Mar 8 18:31:33 2002 From: patton@er.com (Martin O. Patton) Date: Fri, 08 Mar 2002 13:31:33 -0500 Subject: [mems-talk] Re:mj/cm2 exposure correction In-Reply-To: Message-ID: <5.1.0.14.0.20020308132812.009f29f0@192.156.168.2> Correction to my reply: I left out an h. That's a 1/8 inch slit (not eight inch) about an inch long for the foil mask. Marty From kevinbanks11@hotmail.com Fri Mar 8 18:47:53 2002 From: kevinbanks11@hotmail.com (Kevin Banks) Date: Fri, 08 Mar 2002 18:47:53 +0000 Subject: [mems-talk] SU-8 exposure and parylene Message-ID: Hi, We use OAI aligners and we have an OAI instrument which can be used to measure the output in mW/cm2. It's a fairly simple piece of kit and isn't attatched to the aligner, I don't know whether they sell it as a seperate unit, but I don't see why they wouldn't. Not that's it's really relevant unless you per chance have exactly the same aligner, but our i-line units put out just over 20mW/cm2. Regards, Kevin Banks >From: anshu mehta >Reply-To: mems-talk@memsnet.org >To: mems-talk@memsnet.org >Subject: [mems-talk] SU-8 exposure and parylene >Date: Thu, 7 Mar 2002 20:00:10 -0800 (PST) > >Hi > I am using Su-8 5 as a structural layer for my >device. I looked up Microchem website and they give >the exposure in terms of mJ/cm2. Is it possible to >find a rough estimate for exposure time on a >particular aligner using the mJ/cm2 data? > >Also, I wanted to know if it possible to pattern >parylene? > >Thanks, >Anshu mehta. > > Try FREE Yahoo! Mail - the world's greatest free > > email! > > http://mail.yahoo.com/ >Try FREE Yahoo! Mail - the world's greatest free email! >http://mail.yahoo.com/ >_______________________________________________ >mems-talk@memsnet.org mailing list: to unsubscribe or change your list >options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk >Hosted by the MEMS Exchange, providers of MEMS processing services. >Visit us at http://www.mems-exchange.org/ _________________________________