[mems-talk] patterning uniformity over 100 mm areas

[Doug Mar]

In my relatively simple photolithography, I pattern coarse
parallel lines:  e.g. linewidth = 1-10 um, repeat distance =
5-200 um over areas of approx 50 mm x 50 mm.  This is reliable
and not difficult.

I need to extend this to larger sized areas (100 mm x 130 mm).
I want to explore direct writing methods that do not suffer
from field stitching errors.  I want line location errors to be
kept below +/- ~20 nm over the entire field.

I'd appreciate being put in contact with facilities (incl vendors)
that can achieve this.

thanks,
Doug Mar, University of Texas at Austin