[mems-talk] Photoresist AR-N 4400-50

[sebastian schmidt]

Hello everyone,
I´m a student from Germany and currently I´m working on a student research project. There I have a problem trying to manufacture electrothermal actuators by 
electroplating nickel
using the negative photoresist AR-N 4400-50 from the German company 
Allresist.
The thickness of the resist layer should be in the range of 200-500 μm.

My first tests showed that the time for the development of thinner 
layers like 70 μm is much
longer (more than one hour) than recommended by Allresist. This is even 
worse for thicker layers.
200 μm took several hours to develop. I used the recommended developer 
AR 300-44.

Please let me know, if you have experienced similar problems or have an 
idea how I can improve
my process.

Thank you!

Sebastian Schmidt