[mems-talk] Silicon nitride residual stress

Darius darius.virzonis at ktu.lt
Tue Nov 28 03:18:32 EST 2006


Andrea,

Yes, micromaschined cantilever or bridge deformation is often used as a thin
films intrinsic stress measurement tool. I consider you to read these
papers:

J. Micromech. Microeng. 15 (2005) 608-614
Smart Mater. Struct. 15 (2006) S29-S38
J. Micromech. Microeng. 13 (2003) 686-692

Good luck

Darius


-----Original Message-----
From: mems-talk-bounces at memsnet.org [mailto:mems-talk-bounces at memsnet.org]
On Behalf Of Andrea Mazzolari
Sent: Monday, November 27, 2006 9:48 PM
To: 'General MEMS discussion'
Subject: [mems-talk] Silicon nitride residual stress

 
Hi all.
I need to determine residual stress in LPCVD silicon nitride.
Realizing silicon nitride cantilevers whould be possibile to measure silicon
nitride residual stress.
Measuring not-loaded cantilever deflection it whould be possible to
determine stress gradient, is this correct?
Whould be possible to measure also residual stress starting from silicon
nitride cantilevers ?


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