[mems-talk] Anisotropic Wet Etching of Silicon nitride
ess26 at runbox.com
ess26 at runbox.com
Wed Nov 29 10:56:58 EST 2006
Hi Bob,
Thanks for the reply. The thing is that I would like to minimize the ions bombardment damage from RIE to etch under a very "delicate" material.
Ed
> It would be much easier to plasma etch silicon nitride anisotropically. I don't know of a masking material that would hold up to 180 degree C. Phosphoric Acid bath. Bob Henderson
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