[mems-talk] Anisotropic Wet Etching of Silicon nitride

ess26 at runbox.com ess26 at runbox.com
Wed Nov 29 10:56:58 EST 2006


Hi Bob,

Thanks for the reply. The thing is that I would like to minimize the ions bombardment damage from RIE to etch under a very "delicate" material.

Ed
 
> It would be much easier to plasma etch silicon nitride anisotropically. I don't know of a masking material that would hold up to 180 degree C. Phosphoric Acid bath. Bob Henderson 


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