[mems-talk] Anisotropic Wet Etching of Silicon nitride

[bobhendu at aol.com]

Ed:
 
Are you etching the nitride and is the delicate material exposed at the same time or is there nitride over the whole surface? If you are etching away nitride and the delicate material is under the nitride then you can etch 90% of the nitride and then change your conditions to remove the final 10 % in a more gentle nitride etch condition. This way you can drive the selectivity of the underlying material much higher by changing power, pressure and possibly etch chemistry. Wet chemistries won't work for you I have a feeling. Bob
 
 
-----Original Message-----
From: ess26 at runbox.com
To: mems-talk at memsnet.org
Sent: Wed, 29 Nov 2006 8:56 AM
Subject: Re: [mems-talk] Anisotropic Wet Etching of Silicon nitride


Hi Bob,

Thanks for the reply. The thing is that I would like to minimize the ions 
bombardment damage from RIE to etch under a very "delicate" material.