[mems-talk] Partial Metallization of Vertical Walls

[Huaibin Zhang]

---- Original message ----
>Date: Fri, 13 Oct 2006 19:31:48 -0400
>From: "Xiaoguang \"Leo\" Liu" <liuxiaoguang at gmail.com>  
>Subject: [mems-talk] Partial Metallization of Vertical Walls  
>To: "General MEMS discussion" <mems-talk at memsnet.org>
>
>Dear all
>I've been working on a project in fabricating cavity electromagnetic
>resonators that require partial metallization of the side walls. For
>example, I would like to produce a rectangular cavity  in the silicon
>substrate by DRIE. I would then want 2 of the 4 side walls to be
>metallized with gold while keeping the other 2 silicon. I've thought
>really hard about this but could not find a way to meet the
>requirement. The cavity in consideration is about 1mmx1mm big.
>
>Does anybody have good suggestions? Thanks a lot

Wow, it is a challenging task. Good thing is that 1mm x 1mm is not too hard to handle. I have few questions want to know: (1) how many cavities do you need to make? 
(2) What is the relative position of the two side walls? Do they have to be in the opposite side?

Huaibin