[mems-talk] device passivation layer

[walter essinger]

Greetings,
Although 2771 is an older material it works extremely well.
good definition when patterned
We run hundreds of wafers using this and other HD materials.
Yes 350 is OK in nitrogen background gas.
Is your2771 dated/old or not kept refrigerated?
The final film should be hard /very tough
Walter at elume.com
www.elume.com
----- Original Message ----- 
From: "Xiaoyong_Liu" <Xiaoyong_Liu at hotmail.com>
To: <mems-talk at memsnet.org>
Sent: Tuesday, September 05, 2006 1:29 PM
Subject: [mems-talk] device passivation layer


> Dear All,
>    I am making some of kind of  simple patterned wafer which will be used 
> as test piece for our scanning sensor system. The requirement is that the 
> sample needs to be protected by a passivation layer which is hardly able 
> to be scratched since the sensor is in contact scanning. I tried to use 
> SiO2 done by either PECVD or recative sputtering, but none of them works. 
> I also tried photosensitive polymide material(PI 2771), but it is kind of 
> soft aftere curing at 350C as suggsted by vendor. Does any one have any 
> experience with that?