[mems-talk] reducing stress in sputtered TiW

[Jan Michael Kubr]

Hi,

We are setting up a newly acquired PE 4410 sputter system for our TiW 
film needs. While we are controlling the pressure and power during the 
etch (as well as temperature), we still seem to have little control over 
the stress in our films so something is going on that we are not aware 
of. A couple hypothesis are: we do see a hydrogen peak before sputter 
that has disappeared afterwards. How strong an influence would that have 
on our film? Flow rate (Argon) is not fully controlled but we are 
setting our pressure so that might have an influence.

Oh yes, we would like to run wafers with photo-resist which gives us a 
temperature ceiling of perhaps 100C, rather limiting our parameters.

Recommendations for consultants with experience with controlling stress 
in TiW films in the Bay Area would be hugely appreciated :D

Thanks!

Michael