[mems-talk] An effective way to do lift-off

[Bill Moffat]

Image reversal to create a negative slope resist line.  This allows
production control down to 0.1 micron metal lines. 
Bill Moffat, CEO 
Yield Engineering Systems, Inc. 
203-A Lawrence Drive, Livermore, CA  94551-5152
(925) 373-8353
bmoffat at yieldengineering.com
www.yieldengineering.com

-----Original Message-----
From: mems-talk-bounces at memsnet.org
[mailto:mems-talk-bounces at memsnet.org] On Behalf Of Yue Mun Pun, Jeffrey
Sent: Wednesday, April 04, 2007 2:32 AM
To: mems-talk at memsnet.org
Subject: [mems-talk] An effective way to do lift-off

Hi,
Can anyone tell me what is an effective way to do lift-off with resist
AZ5214E?  I have tried the following process 1.  Spin coat AZ5214E at
5000rpm on SiO2 or SU-8 wfr 2.  Bake at 95'C for 1min 3.  Expose at
74.1mJ/cm2 4.  Develop in AZ Developer for 20s 5.  Evaporate 10nm Cr &
300nm Gold at a rate of 0.07-0.09nm/s.
6.  Lift-off using Acetone
 
I have discovered that lifting off with acetone is more effectively done
with ultrasonic treatment, but ultrasonic treatment is too harsh when
the substrate is SU-8 as cracks will result.
How about using AZ300 Resist stripper at 80-90'C or is there a better
method?