[mems-talk] CF4/O2 RIE affect Cu

[Xiaoding wei]

Hi, 
I am doing RIE removing SiN and Si with CF4/O2. But I need some literature 
about how the RIE with CF4/O2 affect the metal film (like Cu), will RIE 
generate point defect or damage the surface on the metal film? (I know RIE 
with *Cl gas/ Ar will etch metal) 
Can someone tell me a reference paper or any publication about the CF4/O2 
RIE's effect on metal?

Thanks