[mems-talk] will the SOI fabrication process affect the anodic bonding

[matthew king]

Hi all,
  
The wafer supplier offer SOI wafers fabricated in several ways, including SIMOX and bonding. As I need to anodically bond the SOI to glass, I wonder if the intermediate SiO2 would make the bonding impossible.So my first question is:If the choice of SOI fabrication process would affect the bonding process,or I just need to pay attention to specifications like resistivity and SiO2 thickness(<100n?)?
   
  Both silicon layers of SOI is needed. They both have low resistivity but the top silicon is much thicker than the hander layer.My second question is: Can I just buy a double side polished SOI wafer and use the handle layer as the device layer?Will this bring trouble to processes?
   
  Thank you  in advance.
  
Best Regards, 
  Matthew King