[mems-talk] Multi layer SU-8 process
Yue Mun Pun, Jeffrey
g0500396 at nus.edu.sg
Tue Apr 24 20:41:04 EDT 2007
Anna,
I've noticed that you mentioned using the oven and observing a layer of 'skin' on the SU-8. Try not to use the oven as oven baking tends to harden the outer layer of SU-8 leaving the bulk of the SU-8 unbaked. That could explain the 'skin' you saw. Try using hotplate baking throughout.
Also, when building multiple layers SU-8, try to ramp up to 65'C from room temperature for the first temperature bake, then ramp up to 95'C on the same hotplate, then cool down again to 60-65'C for a short period before ramping down to room temperature. This process takes a much longer time but it introduces lesser thermal shock stress than if you were to introduce the SU-8 to 65'C and then to 95'C suddenly.
If your holes are to be through-holes from the 2010 layer down to the 2100 layer, then you can lay the layers on top of each other. Otherwise, if your holes are to stop on the 2100 layer itself, then you will need a UV blocking layer such as Chromium thermally evaporated on the first layer of SU-8. SU-8 absorbs i-line UV light quite well and will be crosslinked if there is no UV blocking layer from the areas which are not intended to be crosslinked.
Hope this helps.
Jeffrey
________________________________
From: mems-talk-bounces at memsnet.org on behalf of Dubnisheva, Anna
Sent: Wed 4/25/2007 1:57 AM
To: mems-talk at memsnet.org
Subject: [mems-talk] Multi layer SU-8 process
Hello to everyone,
I would like to ask for advice/help in processing of multi layer SU-8.
I use three layer process: 100 um SU-8 2100 + 10 um SU-8 2010 + 100 um SU-8 2100; where I spin, bake and expose each layer separately and then develop all of them together. This process used to work just fine, but then our lab got a new aligner MA/BA-6 and I also have noticed that chemically SU-8 differ from bottle to bottle - every time I open a new bottle I have to "readjust" my process all over again. I can make one layer of each SU-8 on bare Si wafer and pattern it just fine - no problem, but when I tried to put two layers together and pattern my top 10 um thick layer of SU-8 2010 (on top of 100 um thick patterned layer of SU-8 2100) with 10 um holes, the holes are either underexposed or all closed (overexposed?) - exposure time difference in 0.5 sec gives such different results!
The whole process I do looks like that:
1 layer SU-8 2100 - spin at 2600 rpm for 45 sec; bake 5 min @65C hotplate + 55 min @ 95C in the oven; 18 sec exposure @15mW/cm-2; PEB 30 <mailto:min at 95C> min @ 95C in the oven; then spin SU-8 2010 at 2500 rpm for 45 sec; bake 1min @65C hotplate + 6 min @95C oven; either 5 or 5.5 or 6 sec <mailto:exposure at 15> exposure @15 mW/cm-2; PEB 8 min @95C in the oven. When I develop these two layers for 15 min the holes are either closed or underexposed or there is a '"skin" overfloating the openings (I do SEM analysis after each run) and I can't get nicely defined holes... I do not use UV filter and I was thinking to get one and try it. Also wanted to mention that bake in the oven proved to be optimal for me - I bake wafers lying on the solid metal shelf inside the oven and it seems to work fine.
I can't get to my third layer of SU-8 until I make two layers work and so far I have no success.
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