[mems-talk] PECVD SiN at temperature 250℃

[memser]

In our current project, we need to deposit a multilayer dielectric coatings consisting of alternativing a-Si:H and a-SiNx:H layers. Generally, we deposit them at 250℃ and 350℃ respectively with Oxford Plasma System 100，but now we need to deposit a-SiNx:H with the same deposited temperature of a-Si:H (250℃). So I really need  some electronic documents about optical and mechanical propertis of of a-SiNx:H vs deposited conditions at 250℃. The stress of SiNx film should be small and tensile.
 If possible, could any of you  give me some advices, or provide me deposited conditions to achieve this structure?Such as: Gas flow,Temperature,Pressure,HF/LF and so on.
Thank you very much!  
Best wishes 
                                       Yours sincerely
                                                   Xu Yan
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