[mems-talk] Annealing of Ti-Ag-thin films on Si

[Michael D Martin]

For good Ag adhesion it should not be necessary to anneal at all. Just
be sure not to break vacuum between Ti and Ag deposition. But if you
must anneal you should definitely do it in N2.  Ag will readily form an
oxide, it will also form a native oxide upon exposure to air. 

-Mike
 U. of Louisville 

>>> "Miyakawa, Natsuki" <Natsuki.Miyakawa at eads.net> 1/30/2007 3:32 AM
>>>
Dear all,
I want to do PVD of Ti (~10nm, as adhesive layer) and Ag (~100-200nm)
on
Si consecutively. Could anyone suggest me annealing parameters for
adhesion enhancement? The surface should remain pure silver afterwards
(no oxide etc.), so should I anneal the samples under N2-atmosphere?
Should Ti and Ag be annealed separately under different conditions?