[mems-talk] Photoresist as etch mask! (Nitin Shukla)

[Frank Yaghmaie]

Nearly all positive tone resists patterns are dissolved in TMAH or  
KOH at standard concentrations used for Silicon etch. As such, they  
can not be used as etch mask for Silicon wet etch processes even at  
room temp. They are much more effective when used in wet acid etch  
image transfer steps.

Negative tone resists such as SU8 or KMPR have some advantage over  
positive tone resist for your application, yet for wet  Silicon etch,  
you may want to consider a hard mask, preferably Silicon-Nitride  
( Si3N4) or Silicon-Oxide ( Thermal SiO2) .

On Oct 2, 2007, at 9:00 AM, mems-talk-request at memsnet.org wrote:

> Photoresist as etch mask! (Nitin Shukla)

Frank Yaghmaie, PhD
Director
Northern California Nanotechnology Center
University of California Davis
College of Engineering
530-754-9518
fyaghmaie at ucdavis.edu