[mems-talk] fudging/spreading around the PR features

[Andrea Mazzolari]

Here is the procedure i follow for patterning of silicon or silicon nitride:

1) standard rinse and clean
2) spinning of microposit primer (0.5ml)
3) spinning of S1813 (4500 ml)
4) soft bake (3 min at 115 °C)
5) exposition (150 mJ)
6) develop
7) hard bake (3 minutes at 115 °C)

Best regards,
Andrea

> I am new to Photolithography. I am doing Photolithography with S1813.
> Many a times I get fudging/spreading of photoresist around the edge of