[mems-talk] RE: Safe OTS solution for hydrophobic pattern with PR?

[Boris Kobrin]

Hi Yuming,

In order to avoid photoresist interaction with OTS solution solvent
(chloroform) I would suggest to deposit hydrophobic layer in a vapor phase
(for example, MVD-100 vapor deposition system will do a good job for you).
Alternative method to pattern Self-assembled monolayers (without photoresist
processing) is UV Ozone stripping through a mask.

Boris Kobrin, Ph.D.
Sr.Dir Marketing & Bus.Dev.
Applied Microstructures, Inc.
1020 Rincon Circle, San Jose, CA 95131
Office: (408) 907-2885 x2805
Mobile: (408) 806-6859
boris_kobrin at appliedmst.com 
 
Message: 5
Date: Wed, 19 Sep 2007 21:20:36 +0800
From: "Steven Yang" <steven030505 at gmail.com>
Subject: [mems-talk] Safe OTS solution for hydrophobic pattern with PR?

Hi,all
I am facing problem to pattern OTS hydrophobic region in a
microchannel. The method I plan to use is PR (AZ 5214 or AZ 7220)
pattern a open window on part of microchannel (100um width of channel,
OTS pattern 100x100um or 100x200um). and the OTS solution will be OTS
2mM in Hexadecane:Chloroform (4:1 by Vol). However, the problem is
that I was told that chloroform might strip the photoresist during dip
in OTS coating. Does anybody have this experience or the alternative
OTS solution recipe to avoid photoresist stripping?