[mems-talk] Photolithography - Resist peeling
Abhishek Jain
ajain at steele.mgh.harvard.edu
Fri Aug 15 14:57:15 EDT 2008
Wht is the feature size of your pattern that is peeling off? If it is
less than 20um, it can be because of the mylar mask. I had this
problem before and figured out that if I use the chrome mask, the
patterns are fine, but small patterns peel off (and some other issues
like rough sidewalls) with mylar.
We have published in this regard.. take a look at
Jain A and Posner JD, Anal Chem, 2008, 80, 1691-
hope this is of some help
regards
-Abhishek Jain
On Fri, Aug 15, 2008 at 1:39 PM, madhav rao <madhavrrao at yahoo.co.in> wrote:
>
> Hi,
> I am experiencing a problem in patterning on silicon-di-oxide wafers; I am using SHIPLEY 1818 resist to get a thickness of 2.5 micron; 6 seconds of exposure time. After developing for 60 seconds, I observe, the resist layer peels off; leaving no patterns on the wafer. Also I had soft-baked the resist at 95 C for 2 minutes in hot-plate.
> This seems strange to me, as a month ago, I had successfully transferred the patterns on to silicon-di-oxide wafers.
> I am using mylar film masks.
> Please let me know, if any one had experienced similar problems before; and if so, could you let me know suggestions to solve ?
>
> Thanks
>
> Regards,
> Madhav Rao,
> Graduate student,
> University of Alabama.
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