[mems-talk] RIE removal of S1818 photoresist

[Jaibir sharma]

 Hello Mark , 

I feel that pressure  and power you applied is to high.

Please try this combination:

pressure=200 mT
power between 250 to 300 watt.
time 20 to 30 min

best of luck
jaibir


On Wed, 16 Jan 2008 Curtis,Mark E. wrote :
>Hello all,
>
>I’m using Shipley S1818 positive photoresist as a mask for wet-etching a 100 nm thick film of chromium.  After using a wet chemical photoresist stripper there remains some photoresist residue on the surface of the chromium.  I’ve attempt to use a Trion RIE to remove the photoresist residue with the following etch parameters:
>Gases/Flow Rate (O2/50 sccm),
>Pressure (500 mTorr),
>RIE Power (25 W), ICP Power (500 W), and
>Time (30 min).
>
>To my surprise, I found that not only did it remove the photoresist but also the chromium.  Does anyone know of a good photoresist removal recipe for RIE that will not etch chromium.  I have previously tried a shorter etch time (~10 min) but it did not completely remove the photoresist residue.


with regrads

Jaibir Sharma
Reasearch Scholar(PhD)
Electrical Department,
IIT Madras,
Chennai - 36
INDIA

Phone:044-22575444(off)
      09840396872(home)