[mems-talk] KOH etching of doped (P,As) Si wafers

[Adam Sossalla]

Hi,

No, the etchrates are much smaller than in the case of undoped silicon and
you can use a highly doped p+-layer for an etch stop.

In case of boron the etchrate starts to decrease above 10e19 cm^-3 and is in
the range of 10e20 cm^-3 neraly 100 times smaller.

Adam



> -----Ursprüngliche Nachricht-----
> Von: mems-talk-bounces at memsnet.org [mailto:mems-talk-bounces at memsnet.org]
> Im Auftrag von P.E.M. Kuijpers
> Gesendet: Freitag, 4. Juli 2008 15:53
> An: mems-talk at memsnet.org
> Betreff: [mems-talk] KOH etching of doped (P,As) Si wafers
> 
> Hi All,
> 
> Is the etch behaviour (in 33% KOH) of highly doped Si wafers the same as
> un-doped Si wafers.