[mems-talk] Polymer residual about RIE etching of SiO2 by CHF3

[liuxf]

Hi all:
 
I am currently trying to open a 3um*3um hole via SiO2 with CHF3 RIE etching so that metal electrode can be deposited via this hole.
But after the metal deposition, it is open circuit. Probably there is some polymer residual in the hole. Any boday can tell me is there any good way to remove this? Is oxygen plasma ok? If so, how about the power? Will the oxygen plasma damage the SiO2? Is there any other reason for this open circuit? 

Thank you so much
xinfei