[mems-talk] Polymer residual about RIE etching of SiO2 by CHF3

[Kvel Bergtatt]

F-based polymer is the most likely reason for your opens. O-plasma is
needed to oxidize the polymer, then it can be removed with a wet clean.

On 6/19/08, liuxf <xf_liu at hotmail.com> wrote:
>
> Hi all:
>
> I am currently trying to open a 3um*3um hole via SiO2 with CHF3 RIE etching
> so that metal electrode can be deposited via this hole.
> But after the metal deposition, it is open circuit. Probably there is some
> polymer residual in the hole. Any boday can tell me is there any good way to
> remove this? Is oxygen plasma ok? If so, how about the power? Will the
> oxygen plasma damage the SiO2? Is there any other reason for this open
> circuit?
>
> Thank you so much
> xinfei

-- 
_fm