[mems-talk] Polymer residual about RIE etching of SiO2 by CHF3

[Andrew Sarangan]

It is unlikely you will be able to entirely remove the flourocarbon
polymer with O2 plasma. Try etching with CF4 or SF6. That should
produce less polymer deposition.



On Fri, Jun 20, 2008 at 2:25 PM, Kvel Bergtatt <vacmitun at gmail.com> wrote:
> F-based polymer is the most likely reason for your opens. O-plasma is
> needed to oxidize the polymer, then it can be removed with a wet clean.
>
> On 6/19/08, liuxf <xf_liu at hotmail.com> wrote:
>>
>> Hi all:
>>
>> I am currently trying to open a 3um*3um hole via SiO2 with CHF3 RIE etching
>> so that metal electrode can be deposited via this hole.
>> But after the metal deposition, it is open circuit. Probably there is some
>> polymer residual in the hole. Any boday can tell me is there any good way to
>> remove this? Is oxygen plasma ok? If so, how about the power? Will the
>> oxygen plasma damage the SiO2? Is there any other reason for this open
>> circuit?
>>
>> Thank you so much
>> xinfei