[mems-talk] Info about ITO sputtering

[walter]

Greetings Rafael,

The basic process uses RF magnetron sputtering,preferable in a tool that is 
cryo pumped to start.
We at Elume pump down to low 7 range.
We backfill with argon to approx 10 micron.
The tool we have for ITO is in auto mode however you can get good films 
using manual mode.
We also use O2 in our process.
ITO stoichiometry needs experimenting.
If you need to know more specifics contact me.
Kind regards
walter
www.elume.com
walter at elume.com
----- Original Message ----- 
From: "Rafael Garcma Valverde" <Rafael.GValverde at upct.es>
To: <mems-talk at memsnet.org>
Sent: Thursday, March 27, 2008 8:53 AM
Subject: [mems-talk] Info about ITO sputtering


Hi all,

I'm trying to work out the energy and argon consumption in the ITO DC
sputtering process. I know that ITO target are usually deposited into a
glass substrate using DC sputtering. In the MEMS web site
(http://www.mems-exchange.org/catalog/P1827/) I have found very
interesting information about the process. However I would like to
confirm the power consumption in the process (only microwave power is
mentioned, nothing about vaccumm pumps or the whole process) and the
argon consumption.