[mems-talk] PR removal after ICP RIE etching

[Tolga YELBOGA]

Hi;

If during the etching process inside the chamber of ICP-RIE is hotter than
critical temperature of resist, your resist be strong. Also you could not
remove the resist. Maybe you can control the cooling water of your
instrument. Or you can try to etch with short period(For example 3 minutes.)
Other reason can be thickness of your resist.


Tolga YELBOGA 
Project Engineer
Nanotechnology Researh Center 
Bilkent University 
Bilkent, Ankara 06800 TURKEY 
Voice: 90-312-290-1020 
http://www.nanointurkey.com
http://www.nanotam.bilkent.edu.tr


-----Original Message-----
From: Satish Yeldandi [mailto:sathish.yeldandi at gmail.com] 
Sent: Tuesday, May 20, 2008 6:01 AM
To: General MEMS discussion
Subject: [mems-talk] PR removal after ICP RIE etching

Hi!

I have problem removing photo resist after using it as mask for
ICP-RIE etching. I tried Acetone, Acetone+Sonication, PR stripper,
Asher. Nothing is working. Did anyone face this problem before. If
anyone has any solution for this problem please tell me.

Thanks
Satish