Dear all
Anybody have the detail of sputtered silicon nitride for LOCOS
process because when we are using it as masking layer for
oxidation process then we are finding that the silicon nitride
film is also oxidising i.e. it is not working as mask in oxidation
process. we have deposited the film at 200 watt and the spacing
between the target and substrate was 55mm. we are thinking that
this is happening because of pinholes in the film or we are
getting silicon rich silicon nitride film.
any type of suggetion to short out this problem would be highly
appreciated.
thanx and regard
Prem Pal
I.I.T.Delhi, India