Are you doing the ion implantation? Could you tell me what
is the kinetic energy and dose in your process?

> Hi
> i was trying to implant boron through 1000A SiO2. After
> annealing the wafer, we tried to strip the SiO2 in HF and
> BOE. The sample dewetted in HF failed to give any sheet
> resistance value in four probe measurement, whereas one
> done in BOE gave the reading. can anyone suggest the
> reason behind it.
> Ravi Shankar
>
>
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Best Regards,
Kin