durusmail: mems-talk: RESPONSE TO: vivek Prabhu <vrp@po.cwru.edu>
RESPONSE TO: vivek Prabhu <vrp@po.cwru.edu>
1997-08-30
RESPONSE TO: vivek Prabhu
Leslie Allen
1997-08-30
Hi Vivek Prabhu,

I have done some work on with Au/Si and on heaters.  If you want to have an
easy reaction between Au and Si the interface should be clean.  For a layer
of Si/Cr/Au the "Cr" layer is an adhesion layer, but probably also retards
the reaction between Si and Au (diffusion barrier). If you are trying to
bond the Si/Cr/Au wafer to another Si, be careful about the native oxide on
the other Si.

Les Allen

*********** Au-Si  *******************
L.H. Allen, J.W. Mayer, K.N. Tu, and L.C. Feldman, "Kinetics of Si
recrystallization in the Au/Si",
Phys. Rev. B. 41, 8213 (1990)
**
L. H. Allen, G. Ottaviani, C.B. Carter, J. W.Mayer,
"2-D Si  growth during thermal annealing of Au/Si System",
Phys. Rev. B. 41, 8203 (1990)

*******************  Heaters  *************
L. H. Allen, G. Ramanath, S. L. Lai, and Z. Ma. "1,000,000 degrees C/s thin
film electrical heater: in situ resistivity measurements of Al and Ti/Si
thin films during ultra rapid thermal annealing",
Appl. Phys. Lett. 64, 417 (1994).

*******************  Heaters/Calorimeter  *************
S.L. Lai, J.Y. Guo, V. Petrova, G. Ramanath and L.H. Allen, "Size-dependent
melting properties of small tin particles: nanocalorimetric measurements",
Phys. Rev. Lett. 77, 99 (1996)

S.L. Lai, G. Ramanath, L.H. Allen, P. Infante and Z. Ma, "Heat capacity of
Sn nanostructures via a thin-film scanning calorimeter",
Appl. Phys. Lett. 70, 43 (1997).

S. L. Lai, G. Ramanath, L.H. Allen, P. Infante and Z. Ma,
"High-speed (10/sup 4/ degrees C/s)
scanning microcalorimetry with monolayer sensitivity (J/m/sup 2/)"
Appl. Phys. Lett. 67, 1229 (1995).

**************** Wafer Bonding  **************
Z. Ma, T.C. Shen, G. Zhou, H. Morkoc and L. H. Allen, "Wafer Bonding For
Hybrid Circuit Technology using Solid State Reactions",
MRS Proc. 314, 241-245 (1993)
*****
Z. Ma., Zhou, Morkoc, Hsieh, and L.H. Allen, "Solid-state Low Tempertaure
Bonding: Si to GaAs & InP,"
Appl. Phys. Lett. 64, 772-774 (1994)








**********************************************
*  Leslie H. Allen, Associate Professor      *
*  Materials Science Department              *
*  University of Illinois at Urbana          *
*  1304 West Green St.                       *
*  Urbana, IL 61801                          *
**********************************************


TEL: (217) 333-7918
FAX: (217) 244-1631
e-mail: l-allen9@uiuc.edu


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