Dear carmen,
Regarding your gold etching problem,I can suggest you one
thing.If your thickness of gold is upto 0.2 micron or 0.3 micron
then 10 minutes is very long.Another thing is if your
concentration of KI is 20 grams and I2 is 5 grams and DI water 200
ml,then you should dilute the mixture with 50% DI water....
I hope it will help you.
please contact me for further info.
sukanta
On Wed, 28 May 2003 mems-talk-request@memsnet.org wrote :
>Send MEMS-talk mailing list submissions to
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>Today's Topics:
>
> 1. Problem in gold wet etching by using KI/I2 mixture
>(Carmen)
> 2. Titanium Etchant (krishna)
> 3. RE: Titanium etch (Magali Brunet)
> 4. Re: Titanium etch (anupama@ee.washington.edu)
> 5. Re: Mask Aligner (R. Brent Garber)
> 6. Dry film photoresist for gray-scale lithography
> (Fred C Thomas III)
> 7. RE: how long can Shipley 4620 survive in BHF (Bill
>Moffat)
> 8. RE: vapor phase anti-stiction coatings (Bill Moffat)
> 9. question regarding photolithography (sandhya sandhya)
> 10. RE: glass substrate (Garcia Mandayo, Gemma)
> 11. Photolithography alignment marks (Glen Landry)
>
>
>----------------------------------------------------------------------
>
>Message: 1
>Date: Tue, 27 May 2003 23:57:56 +0800
> From: Carmen
>Subject: [mems-talk] Problem in gold wet etching by using KI/I2
> mixture
>To: mems-talk@memsnet.org
>Message-ID: <3ED38B04.AF381264@acae.cuhk.edu.hk>
>Content-Type: text/plain; charset=us-ascii
>
>Dear all,
>
>I faced the problem when I tried to use a KI/I2 mixture to etch
>gold. I
>am going to pattern the Cr and Au layers on the silicon
>substrate, and I
>used thermal evaporator to deposit the Cr and then sputter to
>deposit
>the gold. After depositing the gold layer by using sputter, I
>used a
>KI/I2 mixture to etch the gold layer. After etching for about 10
>mins, I
>saw the gold was completely etched and there should be a shiny Cr
>layer
>under the gold layer after the wet etching. However, there is a
>cloudy
>thin film in light brown color appeared at the bottom of the gold
>layer
>and that layer cannot be etched in the gold etchant. I would like
>to
>know whether you have seen this problem before, and do you have
>any
>suggestion of the reason to cause this problem and what the layer
>is? Is
>that layer caused by some compound generated after the gold
>etching?
>Thank you very much!
>
>Best Regards,
>Carmen
>
>
>
>
>------------------------------
>
>Message: 2
>Date: Tue, 27 May 2003 09:19:11 -0700 (PDT)
> From: krishna
>Subject: [mems-talk] Titanium Etchant
>To: General MEMS discussion
>Message-ID:
><20030527161911.93734.qmail@web41402.mail.yahoo.com>
>Content-Type: text/plain; charset=us-ascii
>
>Dear MEMS members,
>
>I am looking for an Ti etchant that can etch Ti which
>is 300A and should not attack Al underneath it.
>
>Please suggest me.
>Thanks
>Kris
>
>__________________________________
>Do you Yahoo!?
>The New Yahoo! Search - Faster. Easier. Bingo.
>http://search.yahoo.com
>
>
>------------------------------
>
>Message: 3
>Date: Tue, 27 May 2003 18:20:51 +0100
> From: "Magali Brunet"
>Subject: RE: [mems-talk] Titanium etch
>To: , "General MEMS discussion"
>
>Message-ID:
>
>Content-Type: text/plain; charset="us-ascii"
>
>Hi Mahdu,
>
>Try dilute HF (1: 40). On the wafers that I have, there are NiFe
>structures,
>I etch 200 Angstrom of Titanium around these structures and the
>NiFe is not
>affected by the etch (around 20 seconds)
>
>Best of luck
>
>Magali
>
>--
>Energy Processing for ICT
>NMRC, Lee Maltings, Cork, Ireland
>
>Tel: +353 (0)21 4 904279
>Fax: +353 (0)21 4 270271
>
>-----Original Message-----
> From: mems-talk-bounces@memsnet.org
>[mailto:mems-talk-bounces@memsnet.org]On Behalf Of madhulika
>sathe
>Sent: 23 May 2003 17:42
>To: mems-talk@memsnet.org
>Subject: [mems-talk] Titanium etch
>
>
>
>I am looking for an etch for Titanium that does not affect the
>following:
>
>1:Nickel
>2:Iron
>
>Any help in this regard would be greatly appreciated.
>
>Thanks in advance!
>
>Madhu
>LSU
>
>
>
>Need a new email address that people can remember
>Check out the new EudoraMail at
>http://www.eudoramail.com
>
>_______________________________________________
>MEMS-talk@memsnet.org mailing list: to unsubscribe or change your
>list
>options, visit
>http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>Hosted by the MEMS Exchange, providers of MEMS processing
>services.
>Visit us at http://www.memsnet.org/
>
>
>
>------------------------------
>
>Message: 4
>Date: Tue, 27 May 2003 11:11:00 -0700
> From: anupama@ee.washington.edu
>Subject: Re: [mems-talk] Titanium etch
>To: madhulika_sathe@eudoramail.com, General MEMS discussion
>
>Message-ID:
><200305271811.h4RIB0mZ014397@maxwell-a.ee.washington.edu>
>
>Hi Madhu
>
>I use 10:1 BOE (Buffered Oxide etch) to etch Titanium, the
>etch rate for sputtered Ti is 11kA/min. I use evaporated Ti
>& my etch rate is roughly half of that.
>
>I do not have information for Fe & Nickel, but since 10:1
>BOE is fairly commonly available in most labs you might want
>to determine the etch rates. Overall 10:1 BOE gives me good
>& uniform results for Ti etching
>
>Good Luck
>
>Anupama
>
>
>
>
> > I am looking for an etch for Titanium that does not affect
> > the following:
> >
> > 1:Nickel
> > 2:Iron
> >
> > Any help in this regard would be greatly appreciated.
> >
> > Thanks in advance!
> >
> > Madhu
> > LSU
> >
> >
> >
> > Need a new email address that people can remember
> > Check out the new EudoraMail at
> > http://www.eudoramail.com
> >
> > _______________________________________________
> > MEMS-talk@memsnet.org mailing list: to unsubscribe or
> > change your list options, visit
> > http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> > Hosted by the MEMS Exchange, providers of MEMS processing
> > services. Visit us at http://www.memsnet.org/
>
>Anupama V. Govindarajan
>Graduate Student - EE MEMS laboratory
>Department of Electrical Engineering
>University of Washington
>Campus Box 352500, Seattle WA 98195
>Phone: (206)-221-5340
>email: anupama@ee.washington.edu
>
>
>------------------------------
>
>Message: 5
>Date: Tue, 27 May 2003 15:25:29 -0400
> From: "R. Brent Garber"
>Subject: Re: [mems-talk] Mask Aligner
>To: General MEMS discussion
>Message-ID: <3ED3BBA9.34BFC35F@engr.uconn.edu>
>Content-Type: text/plain; charset="us-ascii"
>
>Sreemanth,
>
>I had Suss MicroTec make a few custom 3" chucks for about $1100
>each.
>They can be reached at 1-800-683-7877
>
>Brent
>
>Sreemanth M Uppuluri wrote:
>
> > Hello All,
> >
> > I am looking for a vacuum chuck similar to the one found in
>mask aligners
> > for performing contact lithography experiments. Please let me
>know if
> > anyone has some information regarding it.
> >
> > Thanks
> > Sreemanth
> >
> > ************************************************************
> > Sreemanth M Uppuluri
> > Graduate Research Assistant
> > Center for Laser Micro-Fabrication
> > School of Mechanical Engineering
> > Purdue University
> >
> > Phone: 765-494-5638 (Office), 765-463-9560 (Home)
> > Email: uppuluri@ecn.purdue.edu, sreemanth@hotmail.com
> >
> > _______________________________________________
> > MEMS-talk@memsnet.org mailing list: to unsubscribe or change
>your list
> > options, visit
>http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> > Hosted by the MEMS Exchange, providers of MEMS processing
>services.
> > Visit us at http://www.memsnet.org/
>-------------- next part --------------
>A non-text attachment was scrubbed...
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talk/attachments/20030527/d5443432/garber.vcf
>
>------------------------------
>
>Message: 6
>Date: Tue, 27 May 2003 14:00:23 -0600
> From: "Fred C Thomas III"
>Subject: [mems-talk] Dry film photoresist for gray-scale
>lithography
>To:
>Message-ID:
>
>
>Content-Type: text/plain; charset="iso-8859-1"
>
>I am looking for a 10-50 micron thick, g-line, negative dry film
>resist that has low contrast or is processable such that it's
>apparent contrast is low enough such that gray-scale lithography
>can be implemented with it. Does anyone know of such a dry
>film?
>
>
>E-Business Card
>
>Fred Thomas
>Chief Technologist
>Advanced Research & Development, R&D
>Iomega Corporation
>Building 8
>1821 West Iomega Way
>Roy, Utah 84067
>USA
>
>P: 801-332-4662
>Fax: 801-332-5434
>email: thomasf@iomega.com
>
>Note: If this email is addressed or copied to a party/company
>outside of Iomega and there is a NDA (non-disclosure agreement)
>in place between Iomega and that party/company, it should be
>assumed that the contents of this email is covered by the terms
>of that NDA.
>
>
>
>------------------------------
>
>Message: 7
>Date: Tue, 27 May 2003 15:17:15 -0700
> From: "Bill Moffat"
>Subject: RE: [mems-talk] how long can Shipley 4620 survive in
>BHF
>To: "General MEMS discussion"
>Message-ID:
>
><240593772F9E5C4BB5BECE5FF0B937EC2CB6FF@exchange.yield.yieldengineering.com>
>
>Content-Type: text/plain; charset="gb2312"
>
>Bobo,
> It depends upon the pretreatment of the surface before the
>Shipley is applied. As an example if I used a bake plus a later
>HMDS treatment about 15 minutes was the maximum. I was etching
>17,000 Angstroms of Sio2. With a vacuum vapor prime treatment it
>seemed to be limitless. Bill Moffat.
>
>-----Original Message-----
> From: bobo [mailto:xuemengchen@mail.sim.ac.cn]
>Sent: Monday, May 19, 2003 1:44 AM
>To: mems-talk@memsnet.org
>Subject: [mems-talk] how long can Shipley 4620 survive in BHF
>
>
>Hi, everyone,
>
>who knows how long can Shipley 4620 survive in BHF whithout be
>peel off? Thanks
>
>
>------------------------------
>
>Message: 8
>Date: Tue, 27 May 2003 15:24:22 -0700
> From: "Bill Moffat"
>Subject: RE: [mems-talk] vapor phase anti-stiction coatings
>To: "General MEMS discussion"
>Message-ID:
>
><240593772F9E5C4BB5BECE5FF0B937EC2CB700@exchange.yield.yieldengineering.com>
>
>Content-Type: text/plain; charset="iso-8859-1"
>
>Dave,
> Contact me directly if possible. We are doing a variety of
>anti stiction, surface tension modification systems. Some are
>based on variations of the old HMDS system, some are plasma, we
>have also done plasma silane deposition. Bill Moffat Yield
>Engineering Systems.
>
>-----Original Message-----
> From: Dave Kharas [mailto:dave_kharas@yahoo.com]
>Sent: Friday, May 16, 2003 8:16 AM
>To: mems-talk@memsnet.org
>Subject: [mems-talk] vapor phase anti-stiction coatings
>
>
>Hi all,
>I was wondering if people are aware of a good
>vapor phase anti-stiction coating that can
>be applied to previously released devices, at a
>relatively low temperature around 100C.
>I am aware of some work at Berkeley, applying
>DDMS and FDTS from a water plasma.
>Are there commercial systems available?
>At one point I thought I saw a post from Yield
>Engineering about a system used on the TI DMD.
>Is this approach similar to HMDS wafer priming?
>ADI patent info and perusal through a Gelest catalog
>suggests that they applied a rather bulky looking
>Siloxane prior to packaging. Has anyone else had
>experience with this?
>
>Thanks in advance for your feedback.
>
>Regards,
>
>Dave Kharas Ph.D.
>
>
>
>
>__________________________________
>Do you Yahoo!?
>The New Yahoo! Search - Faster. Easier. Bingo.
>http://search.yahoo.com
>
>_______________________________________________
>MEMS-talk@memsnet.org mailing list: to unsubscribe or change your
>list
>options, visit
>http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>Hosted by the MEMS Exchange, providers of MEMS processing
>services.
>Visit us at http://www.memsnet.org/
>
>
>------------------------------
>
>Message: 9
>Date: Tue, 27 May 2003 15:33:09 -0700 (PDT)
> From: sandhya sandhya
>Subject: [mems-talk] question regarding photolithography
>To: mems-talk@memsnet.org
>Message-ID:
><20030527223309.79357.qmail@web40706.mail.yahoo.com>
>Content-Type: text/plain; charset=us-ascii
>
>Hai all,
>I am Sandhya,a research student In Boise State University. I have
>a question regarding photolithography, I am getting striations
>and small bubbles in the resist after spinning and i am using SPR
>220.7 resist. Can someone please kindly say me what might be
>causing it and what should i do for eliminating them.
>Sincerely
>Research student
>Sandhya Reddy
>
>
>
>
>---------------------------------
>Do you Yahoo!?
>The New Yahoo! Search - Faster. Easier. Bingo.From
>gjit@cat.ernet.in Wed May 28 01:28:04 2003
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>Date: Wed, 28 May 2003 09:44:40 +0530 (IST)
> From: Gurvinderjit Singh
>To: mems-talk@memsnet.org
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>Hi Jing
>Go through book "Piezoelectric Ceramic"by Bernard Jaffe from
>Academic
>Press London.
>Also download book on mechtronics (Actuators based on PZT etc) by
>Uchino
>on site:
>
>www.courses.psu.edu/e_e/e_e597a_kxul/Presentation&Textbook
>bye
>Gurvinder
>
>
>
>_______________________________________________________________________________
>
>
> Gurvinderjit Singh Ahluwalia Tel:
>+91-0731-488656
> Laser Materials Division Fax:
>+91-0731-488650
> Centre for Advanced Technology email:
>gjit@cat.ernet.in
> Indore - 452 013 INDIA
>
>_______________________________________________________________________________
>
>
>
>
>
>
>------------------------------
>
>Message: 10
>Date: Wed, 28 May 2003 09:54:50 +0200
> From: "Garcia Mandayo, Gemma"
>Subject: RE: [mems-talk] glass substrate
>To: "General MEMS discussion"
>Message-ID:
><086C43C9A9A1A541BFDFABCFDA05F58916EE3F@mailnew.tecnun.es>
>Content-Type: text/plain; charset="iso-8859-1"
>
>You can contact VITROTEC SA.
>
>-----Original Message-----
> From: Pilar Carreras Romeo [mailto:pcarreras@etsii.upm.es]
>Sent: lunes 26 de mayo de 2003 12:11
>To: mems-talk@memsnet.org
>Subject: [mems-talk] glass substrate
>
>
>I would like to know a glass substrate vendor located in Spain
>
>
>_______________________________________________
>MEMS-talk@memsnet.org mailing list: to unsubscribe or change your
>list
>options, visit
>http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>Hosted by the MEMS Exchange, providers of MEMS processing
>services.
>Visit us at http://www.memsnet.org/
>
>
>------------------------------
>
>Message: 11
>Date: Wed, 28 May 2003 09:09:39 -0400
> From: Glen Landry
>Subject: [mems-talk] Photolithography alignment marks
>To: mems-talk@memsnet.org
>Message-ID:
><5.2.1.1.2.20030528085352.03aa49b8@anvil.nrl.navy.mil>
>Content-Type: text/plain; charset="us-ascii"; format=flowed
>
>I am looking for other people's ideas for alignment marks. I am
>using a
>Karl Suss MJB3 aligner and I want at least 0.5 micron accuracy.
>The marks
>I am using consist of a ~100micron feature for rough alignment,
>and then a
>vernier. The vernier consists of five rectangles, 2 microns
>wide, and
>separated by 5 microns. The rectangles on the second mask are
>separated by
>5.5 microns in such a way that when alignment is correct, the
>center
>rectangles align. When alignment is 0.5micron off, the rectangle
>one from
>center is aligned. It looks like this (excuse the crude
>drawing):
>
> O O O O O base vernier
>O O O O O top vernier (aligned)
>
>These marks can get me to better than 0.5micron, but I have to
>almost be in
>vacuum contact before I can see my alignment clearly. I have
>thought of
>better alignment marks, but at $600/mask I want to get it right
>the first
>time. I am wondering if it would work better if the top marks
>were
>larger/smaller than the bottom marks (I am using a dark field
>mask) or if I
>would still be able to get as good of an alignment if my marks
>were say
>5microns wide so I could see through them without being in very
>close
>contact. If anyone has a CAD/PDF design of marks that work for
>them,
>please e-mail me. Thanks.
>
>Glen Landry
>
>
>
>------------------------------
>
>_______________________________________________
>MEMS-talk mailing list
>MEMS-talk@memsnet.org
>http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>
>
>End of MEMS-talk Digest, Vol 7, Issue 31
>****************************************
sukanta Debbarma
Scientific officer
SAMEER,IIT Mumbai-400076
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