Dear Kris,
You can use EDTA solution.
Take 5 gm EDTA salt+200 ml DI water=EDTA soln
then take 50 ml EDTA soln+10 ml H2O2+10 drops of Ammonia
soln(NH3)
heat at 40 degree centigrade and start etching......
it will take approximately 1 minutes
you can contact me for further infoprmations
sukanta
On Wed, 28 May 2003 mems-talk-request@memsnet.org wrote :
>Send MEMS-talk mailing list submissions to
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>Today's Topics:
>
> 1. Problem in gold wet etching by using KI/I2 mixture
>(Carmen)
> 2. Titanium Etchant (krishna)
> 3. RE: Titanium etch (Magali Brunet)
> 4. Re: Titanium etch (anupama@ee.washington.edu)
> 5. Re: Mask Aligner (R. Brent Garber)
> 6. Dry film photoresist for gray-scale lithography
> (Fred C Thomas III)
> 7. RE: how long can Shipley 4620 survive in BHF (Bill
>Moffat)
> 8. RE: vapor phase anti-stiction coatings (Bill Moffat)
> 9. question regarding photolithography (sandhya sandhya)
> 10. RE: glass substrate (Garcia Mandayo, Gemma)
> 11. Photolithography alignment marks (Glen Landry)
>
>
>----------------------------------------------------------------------
>
>Message: 1
>Date: Tue, 27 May 2003 23:57:56 +0800
> From: Carmen
>Subject: [mems-talk] Problem in gold wet etching by using KI/I2
> mixture
>To: mems-talk@memsnet.org
>Message-ID: <3ED38B04.AF381264@acae.cuhk.edu.hk>
>Content-Type: text/plain; charset=us-ascii
>
>Dear all,
>
>I faced the problem when I tried to use a KI/I2 mixture to etch
>gold. I
>am going to pattern the Cr and Au layers on the silicon
>substrate, and I
>used thermal evaporator to deposit the Cr and then sputter to
>deposit
>the gold. After depositing the gold layer by using sputter, I
>used a
>KI/I2 mixture to etch the gold layer. After etching for about 10
>mins, I
>saw the gold was completely etched and there should be a shiny Cr
>layer
>under the gold layer after the wet etching. However, there is a
>cloudy
>thin film in light brown color appeared at the bottom of the gold
>layer
>and that layer cannot be etched in the gold etchant. I would like
>to
>know whether you have seen this problem before, and do you have
>any
>suggestion of the reason to cause this problem and what the layer
>is? Is
>that layer caused by some compound generated after the gold
>etching?
>Thank you very much!
>
>Best Regards,
>Carmen
>
>
>
>
>------------------------------
>
>Message: 2
>Date: Tue, 27 May 2003 09:19:11 -0700 (PDT)
> From: krishna
>Subject: [mems-talk] Titanium Etchant
>To: General MEMS discussion
>Message-ID:
><20030527161911.93734.qmail@web41402.mail.yahoo.com>
>Content-Type: text/plain; charset=us-ascii
>
>Dear MEMS members,
>
>I am looking for an Ti etchant that can etch Ti which
>is 300A and should not attack Al underneath it.
>
>Please suggest me.
>Thanks
>Kris
>
>__________________________________
>Do you Yahoo!?
>The New Yahoo! Search - Faster. Easier. Bingo.
>http://search.yahoo.com
>
>
>------------------------------
>
>Message: 3
>Date: Tue, 27 May 2003 18:20:51 +0100
> From: "Magali Brunet"
>Subject: RE: [mems-talk] Titanium etch
>To: , "General MEMS discussion"
>
>Message-ID:
>
>Content-Type: text/plain; charset="us-ascii"
>
>Hi Mahdu,
>
>Try dilute HF (1: 40). On the wafers that I have, there are NiFe
>structures,
>I etch 200 Angstrom of Titanium around these structures and the
>NiFe is not
>affected by the etch (around 20 seconds)
>
>Best of luck
>
>Magali
>
>--
>Energy Processing for ICT
>NMRC, Lee Maltings, Cork, Ireland
>
>Tel: +353 (0)21 4 904279
>Fax: +353 (0)21 4 270271
>
>-----Original Message-----
> From: mems-talk-bounces@memsnet.org
>[mailto:mems-talk-bounces@memsnet.org]On Behalf Of madhulika
>sathe
>Sent: 23 May 2003 17:42
>To: mems-talk@memsnet.org
>Subject: [mems-talk] Titanium etch
>
>
>
>I am looking for an etch for Titanium that does not affect the
>following:
>
>1:Nickel
>2:Iron
>
>Any help in this regard would be greatly appreciated.
>
>Thanks in advance!
>
>Madhu
>LSU
>
>
>
>Need a new email address that people can remember
>Check out the new EudoraMail at
>http://www.eudoramail.com
>
>_______________________________________________
>MEMS-talk@memsnet.org mailing list: to unsubscribe or change your
>list
>options, visit
>http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>Hosted by the MEMS Exchange, providers of MEMS processing
>services.
>Visit us at http://www.memsnet.org/
>
>
>
>------------------------------
>
>Message: 4
>Date: Tue, 27 May 2003 11:11:00 -0700
> From: anupama@ee.washington.edu
>Subject: Re: [mems-talk] Titanium etch
>To: madhulika_sathe@eudoramail.com, General MEMS discussion
>
>Message-ID:
><200305271811.h4RIB0mZ014397@maxwell-a.ee.washington.edu>
>
>Hi Madhu
>
>I use 10:1 BOE (Buffered Oxide etch) to etch Titanium, the
>etch rate for sputtered Ti is 11kA/min. I use evaporated Ti
>& my etch rate is roughly half of that.
>
>I do not have information for Fe & Nickel, but since 10:1
>BOE is fairly commonly available in most labs you might want
>to determine the etch rates. Overall 10:1 BOE gives me good
>& uniform results for Ti etching
>
>Good Luck
>
>Anupama
>
>
>
>
> > I am looking for an etch for Titanium that does not affect
> > the following:
> >
> > 1:Nickel
> > 2:Iron
> >
> > Any help in this regard would be greatly appreciated.
> >
> > Thanks in advance!
> >
> > Madhu
> > LSU
> >
> >
> >
> > Need a new email address that people can remember
> > Check out the new EudoraMail at
> > http://www.eudoramail.com
> >
> > _______________________________________________
> > MEMS-talk@memsnet.org mailing list: to unsubscribe or
> > change your list options, visit
> > http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> > Hosted by the MEMS Exchange, providers of MEMS processing
> > services. Visit us at http://www.memsnet.org/
>
>Anupama V. Govindarajan
>Graduate Student - EE MEMS laboratory
>Department of Electrical Engineering
>University of Washington
>Campus Box 352500, Seattle WA 98195
>Phone: (206)-221-5340
>email: anupama@ee.washington.edu
>
>
>------------------------------
>
>Message: 5
>Date: Tue, 27 May 2003 15:25:29 -0400
> From: "R. Brent Garber"
>Subject: Re: [mems-talk] Mask Aligner
>To: General MEMS discussion
>Message-ID: <3ED3BBA9.34BFC35F@engr.uconn.edu>
>Content-Type: text/plain; charset="us-ascii"
>
>Sreemanth,
>
>I had Suss MicroTec make a few custom 3" chucks for about $1100
>each.
>They can be reached at 1-800-683-7877
>
>Brent
>
>Sreemanth M Uppuluri wrote:
>
> > Hello All,
> >
> > I am looking for a vacuum chuck similar to the one found in
>mask aligners
> > for performing contact lithography experiments. Please let me
>know if
> > anyone has some information regarding it.
> >
> > Thanks
> > Sreemanth
> >
> > ************************************************************
> > Sreemanth M Uppuluri
> > Graduate Research Assistant
> > Center for Laser Micro-Fabrication
> > School of Mechanical Engineering
> > Purdue University
> >
> > Phone: 765-494-5638 (Office), 765-463-9560 (Home)
> > Email: uppuluri@ecn.purdue.edu, sreemanth@hotmail.com
> >
> > _______________________________________________
> > MEMS-talk@memsnet.org mailing list: to unsubscribe or change
>your list
> > options, visit
>http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> > Hosted by the MEMS Exchange, providers of MEMS processing
>services.
> > Visit us at http://www.memsnet.org/
>-------------- next part --------------
>A non-text attachment was scrubbed...
>Name: garber.vcf
>Type: text/x-vcard
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>Desc: Card for R. Brent Garber
>Url :
>http://mail.mems-exchange.org/pipermail/mems-
talk/attachments/20030527/d5443432/garber.vcf
>
>------------------------------
>
>Message: 6
>Date: Tue, 27 May 2003 14:00:23 -0600
> From: "Fred C Thomas III"
>Subject: [mems-talk] Dry film photoresist for gray-scale
>lithography
>To:
>Message-ID:
>
>
>Content-Type: text/plain; charset="iso-8859-1"
>
>I am looking for a 10-50 micron thick, g-line, negative dry film
>resist that has low contrast or is processable such that it's
>apparent contrast is low enough such that gray-scale lithography
>can be implemented with it. Does anyone know of such a dry
>film?
>
>
>E-Business Card
>
>Fred Thomas
>Chief Technologist
>Advanced Research & Development, R&D
>Iomega Corporation
>Building 8
>1821 West Iomega Way
>Roy, Utah 84067
>USA
>
>P: 801-332-4662
>Fax: 801-332-5434
>email: thomasf@iomega.com
>
>Note: If this email is addressed or copied to a party/company
>outside of Iomega and there is a NDA (non-disclosure agreement)
>in place between Iomega and that party/company, it should be
>assumed that the contents of this email is covered by the terms
>of that NDA.
>
>
>
>------------------------------
>
>Message: 7
>Date: Tue, 27 May 2003 15:17:15 -0700
> From: "Bill Moffat"
>Subject: RE: [mems-talk] how long can Shipley 4620 survive in
>BHF
>To: "General MEMS discussion"
>Message-ID:
>
><240593772F9E5C4BB5BECE5FF0B937EC2CB6FF@exchange.yield.yieldengineering.com>
>
>Content-Type: text/plain; charset="gb2312"
>
>Bobo,
> It depends upon the pretreatment of the surface before the
>Shipley is applied. As an example if I used a bake plus a later
>HMDS treatment about 15 minutes was the maximum. I was etching
>17,000 Angstroms of Sio2. With a vacuum vapor prime treatment it
>seemed to be limitless. Bill Moffat.
>
>-----Original Message-----
> From: bobo [mailto:xuemengchen@mail.sim.ac.cn]
>Sent: Monday, May 19, 2003 1:44 AM
>To: mems-talk@memsnet.org
>Subject: [mems-talk] how long can Shipley 4620 survive in BHF
>
>
>Hi, everyone,
>
>who knows how long can Shipley 4620 survive in BHF whithout be
>peel off? Thanks
>
>
>------------------------------
>
>Message: 8
>Date: Tue, 27 May 2003 15:24:22 -0700
> From: "Bill Moffat"
>Subject: RE: [mems-talk] vapor phase anti-stiction coatings
>To: "General MEMS discussion"
>Message-ID:
>
><240593772F9E5C4BB5BECE5FF0B937EC2CB700@exchange.yield.yieldengineering.com>
>
>Content-Type: text/plain; charset="iso-8859-1"
>
>Dave,
> Contact me directly if possible. We are doing a variety of
>anti stiction, surface tension modification systems. Some are
>based on variations of the old HMDS system, some are plasma, we
>have also done plasma silane deposition. Bill Moffat Yield
>Engineering Systems.
>
>-----Original Message-----
> From: Dave Kharas [mailto:dave_kharas@yahoo.com]
>Sent: Friday, May 16, 2003 8:16 AM
>To: mems-talk@memsnet.org
>Subject: [mems-talk] vapor phase anti-stiction coatings
>
>
>Hi all,
>I was wondering if people are aware of a good
>vapor phase anti-stiction coating that can
>be applied to previously released devices, at a
>relatively low temperature around 100C.
>I am aware of some work at Berkeley, applying
>DDMS and FDTS from a water plasma.
>Are there commercial systems available?
>At one point I thought I saw a post from Yield
>Engineering about a system used on the TI DMD.
>Is this approach similar to HMDS wafer priming?
>ADI patent info and perusal through a Gelest catalog
>suggests that they applied a rather bulky looking
>Siloxane prior to packaging. Has anyone else had
>experience with this?
>
>Thanks in advance for your feedback.
>
>Regards,
>
>Dave Kharas Ph.D.
>
>
>
>
>__________________________________
>Do you Yahoo!?
>The New Yahoo! Search - Faster. Easier. Bingo.
>http://search.yahoo.com
>
>_______________________________________________
>MEMS-talk@memsnet.org mailing list: to unsubscribe or change your
>list
>options, visit
>http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>Hosted by the MEMS Exchange, providers of MEMS processing
>services.
>Visit us at http://www.memsnet.org/
>
>
>------------------------------
>
>Message: 9
>Date: Tue, 27 May 2003 15:33:09 -0700 (PDT)
> From: sandhya sandhya
>Subject: [mems-talk] question regarding photolithography
>To: mems-talk@memsnet.org
>Message-ID:
><20030527223309.79357.qmail@web40706.mail.yahoo.com>
>Content-Type: text/plain; charset=us-ascii
>
>Hai all,
>I am Sandhya,a research student In Boise State University. I have
>a question regarding photolithography, I am getting striations
>and small bubbles in the resist after spinning and i am using SPR
>220.7 resist. Can someone please kindly say me what might be
>causing it and what should i do for eliminating them.
>Sincerely
>Research student
>Sandhya Reddy
>
>
>
>
>---------------------------------
>Do you Yahoo!?
>The New Yahoo! Search - Faster. Easier. Bingo.From
>gjit@cat.ernet.in Wed May 28 01:28:04 2003
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>Date: Wed, 28 May 2003 09:44:40 +0530 (IST)
> From: Gurvinderjit Singh
>To: mems-talk@memsnet.org
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>
>Hi Jing
>Go through book "Piezoelectric Ceramic"by Bernard Jaffe from
>Academic
>Press London.
>Also download book on mechtronics (Actuators based on PZT etc) by
>Uchino
>on site:
>
>www.courses.psu.edu/e_e/e_e597a_kxul/Presentation&Textbook
>bye
>Gurvinder
>
>
>
>_______________________________________________________________________________
>
>
> Gurvinderjit Singh Ahluwalia Tel:
>+91-0731-488656
> Laser Materials Division Fax:
>+91-0731-488650
> Centre for Advanced Technology email:
>gjit@cat.ernet.in
> Indore - 452 013 INDIA
>
>_______________________________________________________________________________
>
>
>
>
>
>
>------------------------------
>
>Message: 10
>Date: Wed, 28 May 2003 09:54:50 +0200
> From: "Garcia Mandayo, Gemma"
>Subject: RE: [mems-talk] glass substrate
>To: "General MEMS discussion"
>Message-ID:
><086C43C9A9A1A541BFDFABCFDA05F58916EE3F@mailnew.tecnun.es>
>Content-Type: text/plain; charset="iso-8859-1"
>
>You can contact VITROTEC SA.
>
>-----Original Message-----
> From: Pilar Carreras Romeo [mailto:pcarreras@etsii.upm.es]
>Sent: lunes 26 de mayo de 2003 12:11
>To: mems-talk@memsnet.org
>Subject: [mems-talk] glass substrate
>
>
>I would like to know a glass substrate vendor located in Spain
>
>
>_______________________________________________
>MEMS-talk@memsnet.org mailing list: to unsubscribe or change your
>list
>options, visit
>http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>Hosted by the MEMS Exchange, providers of MEMS processing
>services.
>Visit us at http://www.memsnet.org/
>
>
>------------------------------
>
>Message: 11
>Date: Wed, 28 May 2003 09:09:39 -0400
> From: Glen Landry
>Subject: [mems-talk] Photolithography alignment marks
>To: mems-talk@memsnet.org
>Message-ID:
><5.2.1.1.2.20030528085352.03aa49b8@anvil.nrl.navy.mil>
>Content-Type: text/plain; charset="us-ascii"; format=flowed
>
>I am looking for other people's ideas for alignment marks. I am
>using a
>Karl Suss MJB3 aligner and I want at least 0.5 micron accuracy.
>The marks
>I am using consist of a ~100micron feature for rough alignment,
>and then a
>vernier. The vernier consists of five rectangles, 2 microns
>wide, and
>separated by 5 microns. The rectangles on the second mask are
>separated by
>5.5 microns in such a way that when alignment is correct, the
>center
>rectangles align. When alignment is 0.5micron off, the rectangle
>one from
>center is aligned. It looks like this (excuse the crude
>drawing):
>
> O O O O O base vernier
>O O O O O top vernier (aligned)
>
>These marks can get me to better than 0.5micron, but I have to
>almost be in
>vacuum contact before I can see my alignment clearly. I have
>thought of
>better alignment marks, but at $600/mask I want to get it right
>the first
>time. I am wondering if it would work better if the top marks
>were
>larger/smaller than the bottom marks (I am using a dark field
>mask) or if I
>would still be able to get as good of an alignment if my marks
>were say
>5microns wide so I could see through them without being in very
>close
>contact. If anyone has a CAD/PDF design of marks that work for
>them,
>please e-mail me. Thanks.
>
>Glen Landry
>
>
>
>------------------------------
>
>_______________________________________________
>MEMS-talk mailing list
>MEMS-talk@memsnet.org
>http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>
>
>End of MEMS-talk Digest, Vol 7, Issue 31
>****************************************
sukanta Debbarma
Scientific officer
SAMEER,IIT Mumbai-400076
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