Hello,

The DRIE process as you know is a cyclical process of active etching
followed by passivation.  Therefore first of all make sure you end on an
active cycle.

Secondly, even once you've ended on an active cycle, you are very likely to
have polymers on the vertical surface.  If possible, you should do some sort
of wet polymer strip operation after you remove your masking material, prior
to attempting to grow the thermal oxide.  You might try Arch Chemical, a
product called Microstrip-5000, for stripping such a polymer.

Regards,  Justin

Justin C. Borski
MEMS Program Manager
Advanced MicroSensors Inc.
jborski@advancedmicrosensors.com
www.advancedmicrosensors.com



-----Original Message-----
From: Benoît GAULIER [mailto:benoit.gaulier@thales-avionics.com]
Sent: Friday, June 06, 2003 10:36 AM
To: General MEMS discussion
Subject: [mems-talk] Oxidation after DRIE


Dear Colleagues,

Am searching for practical information / experience on thermal oxidation
after
DRIE Bosch process.
I'm using SOI wafers and i want to oxide the wafers after the DRIE step
Does anybody know if this process is possible?
Any experiences, information, recipes, etc would be greatly appreciated.

Best regards,

Benoît GAULIER.

=================================================
   Benoît GAULIER
   Ingénieur Filière Microtechnologie
   THALES AVIONICS
   NAVIGATION
   25, rue Jules Védrines 26027 Valence CEDEX
   Télécopie: (+33) (0) 4-75-79-86-06
   Bureau: (+33) (0) 4-75-79-88-25
=================================================



_______________________________________________
MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
Hosted by the MEMS Exchange, providers of MEMS processing services.
Visit us at http://www.memsnet.org/