Have a look at the following:

T. Rogers and J. Kowal.

"Selection of glass, anodic bonding conditions and material compatibility
for silicon/glass capacitive sensors"

Published in Eurosensors VIII, 1994.

Sensors and Actuators A 46-47 (1995) 113-120

Regards

Tony

Tony Rogers
Applied Microengineering Ltd
173 Curie Avenue
Didcot
OX11 0QG
UK
Tel.: +44 (0)1235 833934
Fax: +44 (0)1235 833935
e-mail: tony@aml.co.uk

Web:http://www.aml.co.uk


-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org]On Behalf Of mems greenhorn
Sent: 18 June 2003 00:34
To: mems-talk@memsnet.org
Subject: [mems-talk] Anodic Bonding


Can anyone let me know where I can find a good paper on Anodic
Bonding..Trying to do the anodic bonding at device level for the first
time..so need info on the procedure involved ...
- Are there any restrictions on the type of  Oxidation ( Thermal or PECVD)
that Si wafer should have..
- What wafer thickness and oxide thickness would be ideal. ?
- What voltage and temperatures ?
- Significance of the mechanical pressure...?
- Is vaccum a must ?
Any other info that u can give to get a good bonding would be of great help
!
Thanks in advance.
MEMS_GREENHORN


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