I'm working on micromachined photodetector submounts.
The structure comprises 2micron thick Au-plated metal patterns on top of a
150nm LPCVD Si3N4 layer for electrical interconnection purposes. I'm using
100nm evaporated Cr/Au as a seed layer, which is etched away after the
plating, thereby revealing the nitride layer which is used as a masking
during the subsequent KOH-etching. I believe to experience some effects of
electrical crosstalk between the channels.
Has someone investigated this? Is there a difference between LPCVD and
PECVD nitride concerning this issue?

Kind regards,

Johan.
 ________________________________________

           ir.ing. Johan E. van der Linden

            University of Gent (Belgium)
  Department of Information Technology (INTEC)
  St-Pietersnieuwstraat 41         B-9000 Gent
  Tel +32 9 264 33 16      Fax +32 9 264 35 93

      e-mail: johan.vanderlinden@intec.rug.ac.be
     homepage: http://intec.rug.ac.be/www/u/143
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