durusmail: mems-talk: Re: Passivation material for Si KOH-etching and Protection method
Re: Passivation material for Si KOH-etching and Protection method
1997-11-12
1997-11-11
Re: Passivation material for Si KOH-etching and Protection method
robert lyness
1997-11-12
shpaek wrote:
>
>            Dear MEMS ;
>            I'm searching a passivation material for Si KOH-etching.
>            It takes a long time for Si etching and
>            I must protect front side of wafer.
>            Al layer is deposited on the Front side.
>            Does anyone tell me the material and method of protection?
>
>             Si etch thickness ; 450 micron
>             Si etch solution ; KOH + IPA
>
>            I'll wait for your quick response.
>
>
>            Sincerely yours.
>
>  Perhaps you could sputter 1500 Angstroms of chrome.  This metal can be
> etched in a proprietary etct made by Transene Corporation in Danvers,
> MA., USA.  I suggest you could also etch the chrome using a silicon
> nitride deposition on top of the chrome as a secondary mask.  This would
> provide added protection during the silicon etching.
>
> Good luck.


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