Nishant,

Can you try dry etching for the removal of the
sacrificial layer under the polysilicon.

You can also try critical point drying after
sacrificial layer is etched.

Another solution is to add dimples(during design)
underneath the polysilicon beams so that it can give
less contact surface area towards liquid underneath.

Kris
--- Saurabh Nishant  wrote:
> Dear MEMS colleagues,
>   I am a student at indian institute of science and
> facing the problem of stiction in polysilicon
> cantilivers after sacrificial layer etching.I would
> appreciate if any one can suggest me some means to
> overcome this problem.I suspect both the resifual
> stress and capillary forces are reponsible.Any help
> would be highly appreciated.
> thanks.
>
> regards
> nishant
>
>
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