One nice thing about etching Silicon with TMAH is the very low SiO2 etch
rate.  If the "Oxide" you mention is silicon dioxide, why don't you just
use that as a mask?  A couple of thousand Angstroms should be adequate.

Roger Shile

-----Original Message-----
From: mems-talk-bounces+rshile=nanoink.net@memsnet.org
[mailto:mems-talk-bounces+rshile=nanoink.net@memsnet.org] On Behalf Of
Karin Buchholz
Sent: Wednesday, October 29, 2003 7:45 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] metal? etch mask for TMAH

Dear all,


Does anybody have a suggestion for a TMAH etch mask which I can remove
without etching Oxide?

I need to etch trough the bulk of a Si Wafer (600µm) covered with Oxide
on top which will also serve as an etch stop.
I do not want to destroy it when removing the mask.

Will a gold layer be stable to the long etching time needed? If yes,
what is the best sticking layer and how thick does the gold need to be?


Thank you for your help,

Karin

--
mailto: buchholz@wsi.tum.de



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