durusmail: mems-talk: High Selectivity for GaAs over AlAs for Wet ChemicalEtching
High Selectivity for GaAs over AlAs for Wet Chemical Etching
High Selectivity for GaAs over AlAs for Wet ChemicalEtching
High Selectivity for GaAs over AlAs for Wet ChemicalEtching
Oray Orkun Cellek
2003-12-14
Dear Parasa,

As far as I know :
NH4OH ,
Citric Acid, and
Succinic Acid based solutions should(?) work.

Below references are mostly about GaAs on Al(x)Ga(1-x)As, but I guess it
helps.

References :
R.P. Ribas, Materials Science and Engineering B51 1998 p.267
K. Hjort, J.Micromech. Microeng. , 6(1996), p. 370
Eun-A Moon et. al. JAP, vol. 84 no.7 1998, p. 3933

Good luck,

Oray Orkun Cellek
Research Assistant, Ph. D. Student
Electrical & Electronics Engineering Department
Middle East Technical University
06531 Ankara
Turkey
Tel : +90 312 210 4579
Fax : +90 312 210 1261
e-mail : o.o.cellek@ieee.org


----- Original Message -----
From: "Sai Raghav Parasa" 
To: 
Sent: Friday, December 12, 2003 2:58 AM
Subject: [mems-talk] High Selectivity for GaAs over AlAs for Wet
ChemicalEtching


> Hi all,
>
> Can you give 3 best etchants which have high selectivity for GaAs over
AlAs for Wet Chemical Etching?
>
> The etchant should best etch GaAs but should not attack AlAs.
>
> Thanks,
> Bye,
> Parasa,
> University of Kassel, Germany.
>
>
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