using PR as mask wet etch Ni is no good. I used hard baked AZ5214 as mask for Ni etch ( using Ni etch TFB), the edge is always rough: side etch is non-uniform. I sputtered Al on top of Ni, etch Al first as etching mask for Ni, it is better, but still not perfect. Also, this way you have two times side etch, so for fine line pattern not pratical. Ni is best using liftoff. ----- Original Message ----- From: "Z.,W.Y.(Lydia)"To: "General MEMS discussion" Sent: Tuesday, December 30, 2003 11:54 AM Subject: [mems-talk] PAN etch Nickle > Dear All, > > Is it possible to etch nickle using PAN (Phosphoric Acid (H3PO4) > :Acetic Acid (HAc): Nitric Acid (HNO3): DI water = 16:1:1:2)? And what > temperature? > > I try to etch nickle on top of silicon wafer and using PR as mask. Try to save > some money instead of buying nickle etchant. > > Happy New Year! > > Lydia > > > > > ------------------------------------------------- > This mail sent through IMP: http://horde.org/imp/ > > >