Dear all,

        Could someone tell me whether Cl-containing plasma attack Mo or
not? If there is a reference that directly talk about that, would you
please let me know? My goal is to have a plasma that would attack silicon,
silicon nitride, and silicon oxide, but would not attack Mo, at least not
by RIE. Would Cl-containing plasma achieve this purpose? I do not see any
reference that talk about etching Mo with Cl-containing plasma. Thanks for
your help.


Yours sincerely,

Isaac Chan

Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, Canada
N2L 3G1
Tel: (519) 888-4567, ext. 6014
Fax: (519) 746-6321
iwchan@venus.uwaterloo.ca
http://www.ece.uwaterloo.ca/~a-sidic