SiN commonly deposited at 300C. oxide is at 250C. There are standdard. If I
remember correctly: SiN is using
SiH4 and NH3 and N2. Oxide is using SiH4 and NO2.
----- Original Message -----
From: 
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Sent: Monday, January 12, 2004 6:34 PM
Subject: [mems-talk] PECVD NItride/oxide at low temp


> Hello All
>
> I am looking for a recipie that will allow me to deposit
> PECVD nitride or oxide on high aspect ratio structures at
> low temperatures say around 250 degC. The main reason is to
> prevent a polyimide layer on the wafer from degasing when
> the oxidation / nitridation is done at higher temperatures
> like 350deg C.
>
> Please let me know if anyone can point me to such a recipie.
> Any help in this regard will be much appreciated
>
> Looking forward to your replies
>
> Sincerely
> Anupama
>
> Anupama V. Govindarajan
> Graduate Student - EE MEMS laboratory
> Department of Electrical Engineering
> University of Washington
> Campus Box 352500, Seattle WA 98195
> Phone: (206)-221-5340
> email: anupama@ee.washington.edu
>
>
>