As with most materials science questions there are conditions for everything.  I
can list several obstacles to your quest, high temperature metallization
reactions with the silicon, SiO2 formation the film will be flawed unless the
oxidizing environment controlled and the loss of mechanical, electrical and
physical properties.  Several of the oxides of silicon are unique crystal
structures that may or may not be compatible with your poly or single crystal
silicon substrate.... to list a few

I would like to be more positive but that is why we use Silicon Carbide for high
temperature electronics.

Robert Davis