durusmail: mems-talk: SF6 isotropic etch
SF6 isotropic etch
2004-04-02
2004-04-02
Brent Garber (2 parts)
2004-04-05
2004-04-06
2004-04-02
SF6 isotropic etch
Bill Moffat
2004-04-02
The SF6 plasma becomes S +6,F's.  these are the F's in HF acid.  They will eat
any silicon silicon fastest silicon dioxide( thermal) next Silicon nitride
slower.  Bill Moffat

-----Original Message-----
From: Qing Yao [mailto:qingyao@uiuc.edu]
Sent: Friday, April 02, 2004 8:22 AM
To: MEMS-talk
Subject: [mems-talk] SF6 isotropic etch


Hi,


I need to do SF6 isotropic dry etch of single crystal Si. I was wondering if
Silicon Nitride and Silicon Dioxide will also be etched in this process. If
so, does SF6 has good selectivity to them? I heard that people can use
Silicon Nitride or Silicon Dioxide as mask in BOSCH process (DRIE). So I
guess SF6 does have good selectivity to them. But I am not sure. Please let
me know if you have any information about this. Thanks!


Best Regards,


Qing Yao
___________________
M&IE @ UIUC


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