The SF6 plasma becomes S +6,F's. these are the F's in HF acid. They will eat any silicon silicon fastest silicon dioxide( thermal) next Silicon nitride slower. Bill Moffat -----Original Message----- From: Qing Yao [mailto:qingyao@uiuc.edu] Sent: Friday, April 02, 2004 8:22 AM To: MEMS-talk Subject: [mems-talk] SF6 isotropic etch Hi, I need to do SF6 isotropic dry etch of single crystal Si. I was wondering if Silicon Nitride and Silicon Dioxide will also be etched in this process. If so, does SF6 has good selectivity to them? I heard that people can use Silicon Nitride or Silicon Dioxide as mask in BOSCH process (DRIE). So I guess SF6 does have good selectivity to them. But I am not sure. Please let me know if you have any information about this. Thanks! Best Regards, Qing Yao ___________________ M&IE @ UIUC _______________________________________________ MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.memsnet.org/