Can you advise any parameters to control sidewall angle of a 500um thru
wafer etch?  I need to obtain a negative sidewall profile no greater than 1
degree across a 4" substrate with varying diameters(~150um dia.).

Eric Miller  advised maybe the ICP power and/or the
pressure are major contributors.

My intial posting is below.

Thanks in advance for any advice,
Paul

Sent: Tuesday, February 10, 2004 7:02 AM
Subject: [mems-talk] DRIE sidewall angle


>What is the expected tolerance for sidewall angle when DRIE 'etching a Si
>substrate 500um thick?
>
>I need to etch an arrayed die pattern consisting of two holes 125um and
>155um diameter.  The two holes are spaced 150 um apart and the die are
~1mm
>apart.  I want to etch 125 um diameter hole through the 500um thick wafer
>and obtain a negative sidewall profile no greater than 1 degree and a
>backside hole diameter of 125um +17um / -0um.  Likewise, I need the 155um
>diameter hole to have a negative sidewall profile no greater than 1 degree
>and a backside hole diameter of 155um +17um / -0um.
>
>Thank you in advance for any guidance,
>
>Paul

_________________________________________________________________
Test your ‘Travel Quotient’ and get the chance to win your dream trip!
http://travel.msn.com