we use Cr 10nm and have no problem in adhesion.


>From: "Tzenov, Nikolay" 
>Reply-To: General MEMS discussion 
>To: 
>Subject: [mems-talk] depositing Au on Si
>Date: Tue, 27 Apr 2004 15:35:26 -0400
>
>Hi all,
>
>I am a design/process/development engineer in wafer fabrication. I have to
>make Au ohmic contact on both sides of a Si <111> wafer (n+ and p+).
>Additional requirement is that "gold shall be alloyed to minimum eutectic
>temperature". Evaporating (e-beam) Au right on Si surface results in bad
>adhesion and peeling off. Do you have any experience if I put adhesion
>layer (we have capabilities of evaporating Ti) under Au, how thick should
>it be not to act as barrier layer for interdiffusion of Au and Si, so Au-Si
>eutectic can be formed at next annealing step? Also, eutectic temperature
>of Au-2.85% Si is 363oC. What should be the sintering temperature - I am
>thinking of 380oC? How long should last the sintering step? What is the
>best atmosphere - N2, H2, Forming gas (15%H2 - 85%N2)?
>
>Thanking in advance to all of you that will spent a little from your
>precious time to help me I am looking forward to hearing from you soon.
>
>Nick
>
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