Hi, all
Tungsten was sputtered on silicon substrate and went through rapid thermal
anneal for 1-5s at 900C. I would expect around 30 nm tungsten silicide formed
and would like to measure it. does anyone know selective etch between tungsten
and tungsten silicide ? Thanks
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Jialin Zhao
204 Cushing Hall
Department of Electrical Engineering
University of Notre Dame
Notre Dame, IN 46556
Tel: 574-6319011