A CHF3 based etch has good silicon nitride to silicon selectivity.
Addition of a small amount of 02 might be good e.g. 10-20%.  Optimum
settings will be dependent of your particular etcher.  You might start
with something like 10:1 CHF3/O2 (total flow limited by your pumping
capacity), 100 watts of RF power, 80 mTorr pressure.

Roger Shile

-----Original Message-----
From: mems-talk-bounces+rshile=nanoink.net@memsnet.org
[mailto:mems-talk-bounces+rshile=nanoink.net@memsnet.org] On Behalf Of
g915705@oz.nthu.edu.tw
Sent: Tuesday, May 11, 2004 6:23 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] RIE Nitride without Damaging Si

Dear all:

I would like to find out a RIE recipe which performs a selective etching
between nitride and silicon.
I only know that CHF3 is one of the suitable etching gas.
Does anybody know the recipe, including gas types, flow rate, power,
pressure, and etching rate?
The RIE facility here only provides SF6, CF4, O2, N2, CHF3, etc.
The max power is 300W.
Please give me some advice if possible.
I really appreciate it.

Yi Chun

Dept. of Power Mechanical Engineering, National Tsing Hua University,
Taiwan.







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