Probably you will need CF4/O2 (more or less 20%)/Ar (some sccm) mixture,
very low pressure and high power. You need to calibrate the rate because
the mixture could etch also Si. You can try but I'm quite sure that you
need an ICP more then a RIE (your constrain are very difficult for a
RIE).

Ciao
Fabio

-----Messaggio originale-----
Da: mems-talk-bounces+fabio.quaranta=ime.le.cnr.it@memsnet.org
[mailto:mems-talk-bounces+fabio.quaranta=ime.le.cnr.it@memsnet.org] Per
conto di Andre S. Ferlauto
Inviato: mercoledì 19 maggio 2004 15.53
A: mems-talk@memsnet.org
Oggetto: [mems-talk] RIE of SIO2

Hi,

I am a beginner in the RIE field and I would like to know some basic
information for start

I need to make a square matrix of SIO2 pilars with roughly the following

dimensions (1 micron height, 100x100 nm) and the pilars need to be
spaced
by ~400 nm.    My idea is to do e-beam litography (with PMMA)and then
form
a "protective" mask of a metal (e.g.: Ni or Cr).
I would like to know roughly the process conditions (i.e. gases,
pressure,
power) for RIE...
My starting my material is a 1 micron thick SiO2 on Si

Any reference to any material in the web would also be highly
apreciable...

Thanks

Andre


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