Hi,

   in my experience, RCA-1 cleaning of the silicon
wafers helps by particle removal before bonding.
Depending on the plasma you use for the activation,
the rinse time and what you rinse with is important.
For oxygen plasmas, a short RCA-1 dip (~45 sec)
followed by a ~2 min rinse in DI water, followed by
drying seems to maximize the bond strength. I've done
plasma activation with short times (~30 s), around
~150 W RF input power in a technics PE-IIb etcher at
room temperature and obtained bond strengths ~1600
mJ/m2 for Si/Si and Si/SiO2 wafer pairs.
You might want to look up T. Suni's master's thesis
(2001 from University of Helsinki?), B. Roberd's
doctoral thesis (UC Davis, 1996?), F. Lu's doctoral
thesis (UCSD, 2004) and papers by K. Henttinen (of VTT
Electronics, Finland), and S.S. Lau for more
specifics.


--- "Tan, Chuan Seng"  wrote:
> Hello !
>
> Does anyone have any experience with plasma
> activation in oxide wafer
> bonding ?
>
> (1) do we need to chemically clean the wafers prior
> to plasma activation ?
> (2) do we need to rinse and dry the wafers after
> plasma activation ?
> (3) how about power, temperature and duration ?
>
> Appreciate your inputs !
>
> Chuan Seng
>
>
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